CN1195706C - 改善较低温度下二硅化钼加热元件使用寿命的方法 - Google Patents

改善较低温度下二硅化钼加热元件使用寿命的方法 Download PDF

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CN1195706C
CN1195706C CNB018165141A CN01816514A CN1195706C CN 1195706 C CN1195706 C CN 1195706C CN B018165141 A CNB018165141 A CN B018165141A CN 01816514 A CN01816514 A CN 01816514A CN 1195706 C CN1195706 C CN 1195706C
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heating unit
heating element
molybdenium
disilicide
improve
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CN1466556A (zh
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M·圣德比尔格
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Sandvik Intellectual Property AB
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Sandvik AB
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/58085—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides
    • C04B35/58092—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides based on refractory metal silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/0656—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of silicides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/148—Silicon, e.g. silicon carbide, magnesium silicide, heating transistors or diodes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D1/00—Casings; Linings; Walls; Roofs
    • F27D1/0003—Linings or walls
    • F27D1/0006—Linings or walls formed from bricks or layers with a particular composition or specific characteristics
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • F27D99/0006—Electric heating elements or system
    • F27D2099/0008—Resistor heating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/018—Heaters using heating elements comprising mosi2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Resistance Heating (AREA)
  • Ceramic Products (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)

Abstract

一种增加加热元件寿命的方法，此类元件主要包含钼硅化物和此类基础材料的合金，当所述元件在低温工作时，例如在温度范围从400-600℃。本发明的特征在于加热元件材料包含Mo(Si1-xAlx)2，所述材料含足够的铝以基本阻止有害物形成。

Description

改善较低温度下二硅化钼加热元件使用寿命的方法
本发明涉及一种增加低温时加热元件使用寿命的方法，更具体的是钼硅化物型和钼钨硅化物型加热元件的使用寿命，包括此基础材料的不同合金。具有这种性质的元件由申请人以多种形式加工而成。
当这类元件在相对低温下工作时，例如温度在400-550℃左右时，没有保护性的二氧化硅氧化层，所谓的玻璃皮(skin)形成，正如在高温下使用此类加热元件的情况。此外，此类元件会遭受所谓的有害攻击(pestattack)，意味着在元件表面形成一MoO3和SiO2的非保护层。此混合物是多孔并且易分解的，导致此类元件使用寿命的显著缩短。
然而在许多应用中，此类加热元件仍然是最好的选择。这方面的一个例子可以在电路(electronic circuits)生产中的LPCVD(低压化学气相沉积)腔的加热中找到。
一种改善此类加热元件低温性质的途径是在大约1500℃或更高的温度下预氧化此类元件，以形成SiO2氧化层。此氧化层会减慢有害物(pest)的形成。有害物形成是由于MoSi2和O2形成了MoO3和SiO2。此氧化物混合物是相对多孔的，进而对连续的氧化不会起保护作用。
然而，对于抵御有害物的形成，此类方法不能提供令人满意的保护。
另一种方法在瑞典专利说明书第0001846-5号中进行了描述。此方法涉及在所述元件工作时，将元件周围气氛中的水含量保持在低水平。此方法提供了满意的防护有害物形成的保护。
依据本发明的方法显著的增加了此类元件的使用寿命。
本发明涉及一种增加加热元件使用寿命的方法，此类元件的基本组成为钼硅化物和此类基础材料合金，当此类元件在低温下工作，比如温度范围400-600℃(含端值)，其中该方法的特征在于加热元件材料包含Mo(Si1-xAlx)2，其中令此类材料中包含足够的铝以明显地阻止有害物形成。
本发明试图增加加热元件使用寿命，加热元件的基本组成为钼硅化物和此类基础材料合金，当此类元件在低温下工作，比如温度范围为400-600℃(含端值)。此类窑炉的例子已经在上面提到。
钼硅化物和此类基础材料的合金，指钼硅化物例如可以与少量钨合金化。
根据本发明，加热元件的防护(resistance)材料包括Mo(Si1-xAlx)2，此材料包含足够的铝以显著阻止有害物形成。
已经惊奇地发现当此类材料在所述温度范围内工作时，没有或只有很少数量的有害物形成。
这是由于在元件表面Al2O3的形成，进而减少了有害物的形成，或引起所形成物的消失。
根据本发明的一个优选的实施例，x处在0.2-0.6范围内。当实施本发明的实施例时，与使用在所考虑温度范围内的传统元件相比，几乎没有有害物形成。
根据本发明的一个更优选的实施例，x处在0.45-0.50范围内。当实施本发明的实施例时，没有有害物形成时。申请人进行了一个试验，其中一个此类元件在450℃保持了12个月而没产生有害物。这是非常惊奇的结果。
根据本发明的一个优选的实施例，加热元件材料最高含40％体积比的Al2O3。氧化铝组成了机械元件一稳定(mechanical element-stablishing)相。

Claims (1)

1.一种当加热元件在400-600℃的温度范围工作时增加该加热元件寿命的方法，该元件主要由钼硅化物和该基础材料的合金组成，其特征在于该加热元件材料由Mo(Si1-xAlx)2，和最高40％体积百分比的Al2O3组成，并且其中所述材料含有铝，其比例使x处于0.4-0.5的范围内以阻止有害物形成。
CNB018165141A 2000-09-29 2001-09-25 改善较低温度下二硅化钼加热元件使用寿命的方法 Expired - Fee Related CN1195706C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE0003512A SE520149C2 (sv) 2000-09-29 2000-09-29 Förfarande för att öka livslängden hos värmeelement av molybdensilicidtyp vid lägre temperatur
SE00035121 2000-09-29

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CN1195706C true CN1195706C (zh) 2005-04-06

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US (1) US6919544B2 (zh)
EP (1) EP1328491B1 (zh)
JP (1) JP4571373B2 (zh)
KR (1) KR100558111B1 (zh)
CN (1) CN1195706C (zh)
AT (1) ATE356101T1 (zh)
AU (1) AU2001290457A1 (zh)
DE (1) DE60127152T2 (zh)
ES (1) ES2281444T3 (zh)
NO (1) NO20031362D0 (zh)
SE (1) SE520149C2 (zh)
WO (1) WO2002026657A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
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SE520148C3 (sv) * 2000-11-24 2003-07-16 Sandvik Ab Förfarande för att öka livslängden hos värmeelement av molybdendisilicidtyp vid värmebehandling av elektroniska keramer
WO2003087016A1 (en) * 2002-04-05 2003-10-23 Sandvik Ab Method of making a heating element of molybdenum silicide type
SE521796C2 (sv) * 2002-04-05 2003-12-09 Sandvik Ab Förfarande för tillverkning av ett värmeelement av molybdensilicidtyp jämte ett värmeelement
SE521794C2 (sv) * 2002-04-05 2003-12-09 Sandvik Ab Tillverkningsförfarande för ett värmeelement av molybdensilicidtyp, jämte ett värmeelement
US20060108635A1 (en) * 2004-11-23 2006-05-25 Alpha Omega Semiconductor Limited Trenched MOSFETS with part of the device formed on a (110) crystal plane
WO2019179903A1 (en) * 2018-03-18 2019-09-26 Sandvik Intellectual Property Ab A heating element

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Publication number Publication date
US20040056021A1 (en) 2004-03-25
CN1466556A (zh) 2004-01-07
ES2281444T3 (es) 2007-10-01
US6919544B2 (en) 2005-07-19
NO20031362L (no) 2003-03-25
SE520149C2 (sv) 2003-06-03
EP1328491A1 (en) 2003-07-23
ATE356101T1 (de) 2007-03-15
SE0003512D0 (sv) 2000-09-29
NO20031362D0 (no) 2003-03-25
EP1328491B1 (en) 2007-03-07
JP4571373B2 (ja) 2010-10-27
KR100558111B1 (ko) 2006-03-10
DE60127152D1 (de) 2007-04-19
SE0003512L (sv) 2002-03-30
KR20030059149A (ko) 2003-07-07
JP2004510054A (ja) 2004-04-02
AU2001290457A1 (en) 2002-04-08
DE60127152T2 (de) 2008-01-03
WO2002026657A1 (en) 2002-04-04

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