SE510442C2 - Mikrochipslaser - Google Patents
MikrochipslaserInfo
- Publication number
- SE510442C2 SE510442C2 SE9603234A SE9603234A SE510442C2 SE 510442 C2 SE510442 C2 SE 510442C2 SE 9603234 A SE9603234 A SE 9603234A SE 9603234 A SE9603234 A SE 9603234A SE 510442 C2 SE510442 C2 SE 510442C2
- Authority
- SE
- Sweden
- Prior art keywords
- laser
- microchip
- cavity
- phase matching
- elements
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/3544—Particular phase matching techniques
- G02F1/3548—Quasi phase matching [QPM], e.g. using a periodic domain inverted structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0615—Shape of end-face
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08018—Mode suppression
- H01S3/08022—Longitudinal modes
- H01S3/08031—Single-mode emission
- H01S3/08036—Single-mode emission using intracavity dispersive, polarising or birefringent elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/0813—Configuration of resonator
- H01S3/0815—Configuration of resonator having 3 reflectors, e.g. V-shaped resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/113—Q-switching using intracavity saturable absorbers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9603234A SE510442C2 (sv) | 1996-09-05 | 1996-09-05 | Mikrochipslaser |
US09/242,892 US6259711B1 (en) | 1996-09-05 | 1997-09-02 | Laser |
JP10512566A JP2000517481A (ja) | 1996-09-05 | 1997-09-02 | レーザ |
AT97939284T ATE281704T1 (de) | 1996-09-05 | 1997-09-02 | Frequenzverdoppelter laser mit einem quasiphasenangepassten nichtlinearen element innerhalb des resonators |
EP97939284A EP0923799B1 (de) | 1996-09-05 | 1997-09-02 | Frequenzverdoppelter Laser mit einem quasiphasenangepassten nichtlinearen Element innerhalb des Resonators |
PCT/SE1997/001466 WO1998010497A1 (en) | 1996-09-05 | 1997-09-02 | Laser |
DE69731475T DE69731475T2 (de) | 1996-09-05 | 1997-09-02 | Frequenzverdoppelter Laser mit einem quasiphasenangepassten nichtlinearen Element innerhalb des Resonators |
CA002264753A CA2264753A1 (en) | 1996-09-05 | 1997-09-02 | Laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9603234A SE510442C2 (sv) | 1996-09-05 | 1996-09-05 | Mikrochipslaser |
Publications (3)
Publication Number | Publication Date |
---|---|
SE9603234D0 SE9603234D0 (sv) | 1996-09-05 |
SE9603234L SE9603234L (sv) | 1998-03-06 |
SE510442C2 true SE510442C2 (sv) | 1999-05-25 |
Family
ID=20403783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9603234A SE510442C2 (sv) | 1996-09-05 | 1996-09-05 | Mikrochipslaser |
Country Status (8)
Country | Link |
---|---|
US (1) | US6259711B1 (de) |
EP (1) | EP0923799B1 (de) |
JP (1) | JP2000517481A (de) |
AT (1) | ATE281704T1 (de) |
CA (1) | CA2264753A1 (de) |
DE (1) | DE69731475T2 (de) |
SE (1) | SE510442C2 (de) |
WO (1) | WO1998010497A1 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7046711B2 (en) * | 1999-06-11 | 2006-05-16 | High Q Laser Production Gmbh | High power and high gain saturation diode pumped laser means and diode array pumping device |
FR2795248B1 (fr) * | 1999-06-21 | 2004-11-12 | Lprl Laboratoire De Physique D | Source monochromatique comprenant un materiau optiquement actif |
DE19939774C2 (de) * | 1999-08-21 | 2001-06-28 | Rofin Sinar Laser Gmbh | Festkörperlaser (Scheibenlaser) mit direktem Kontakt des aktiven Mediums zu einer Kühlmittelflüssigkeit |
US6373865B1 (en) * | 2000-02-01 | 2002-04-16 | John E. Nettleton | Pseudo-monolithic laser with an intracavity optical parametric oscillator |
US6633596B1 (en) * | 2000-05-31 | 2003-10-14 | University Corporation For Atmospheric Research | Frequency stable pulsed laser |
EP1304777B1 (de) * | 2001-09-28 | 2007-07-25 | The Furukawa Electric Co., Ltd. | Optisches Filter, Lasermodul und Wellenlängenverriegelungsmodul |
DE10204796A1 (de) * | 2002-02-01 | 2003-08-21 | Ozygus Bernd | Lasergainmodul |
US20040076204A1 (en) * | 2002-10-16 | 2004-04-22 | Kruschwitz Brian E. | External cavity organic laser |
JP2004296706A (ja) * | 2003-03-26 | 2004-10-21 | Sony Corp | 光共振器及びレーザ発振器 |
TW574031B (en) * | 2003-04-11 | 2004-02-01 | Applied Biophotonics Corp | Quasi-phase-matching photodynamic therapy (PDT) and photodynamic diagnosis (PDD) laser sources |
JP2006310743A (ja) * | 2005-03-31 | 2006-11-09 | Topcon Corp | レーザ発振装置 |
FR2884651B1 (fr) * | 2005-04-15 | 2007-11-30 | Oxxius Sa Sa | "dispositif laser lineaire monolithique monofrequence, et systeme comprenant un tel dispositif" |
DE502005005756D1 (de) * | 2005-05-12 | 2008-12-04 | Innovavent Gmbh | Verwendung eines Scheibenlasers zur Kristallisation von Siliziumschichten |
JP4532584B2 (ja) * | 2005-05-27 | 2010-08-25 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 内燃機関用の点火装置 |
JP2007158020A (ja) * | 2005-12-05 | 2007-06-21 | Ricoh Co Ltd | 光学素子 |
KR20070076251A (ko) * | 2006-01-18 | 2007-07-24 | 삼성전자주식회사 | 외부 공진기형 면발광 레이저 |
US7835409B2 (en) * | 2006-03-03 | 2010-11-16 | Panasonic Corporation | Illumination light source device and laser projection device |
US7570676B2 (en) * | 2006-05-09 | 2009-08-04 | Spectralus Corporation | Compact efficient and robust ultraviolet solid-state laser sources based on nonlinear frequency conversion in periodically poled materials |
KR100764424B1 (ko) * | 2006-08-30 | 2007-10-05 | 삼성전기주식회사 | 파장변환 레이저 장치 및 이에 사용되는 비선형 광학결정 |
JP2008177226A (ja) * | 2007-01-16 | 2008-07-31 | Cyber Laser Kk | レーザパルス発生装置及び方法 |
US7573930B2 (en) * | 2007-06-14 | 2009-08-11 | Innovavent Gmbh | Anamorphotic solid-sate laser |
JP2009259914A (ja) * | 2008-04-14 | 2009-11-05 | Sony Corp | レーザ装置、レーザディスプレイ装置およびレーザ照射装置 |
JP2010109070A (ja) * | 2008-10-29 | 2010-05-13 | Osaka Prefecture Univ | 多波長レーザー発振装置およびそれを備えてなるテラヘルツ波発生装置 |
EP2680377B1 (de) | 2012-06-29 | 2017-05-10 | C2C Link Corporation | Verfahren zur Herstellung eines Lasermoduls |
US9197027B2 (en) | 2012-07-05 | 2015-11-24 | C2C Link Corporation | Method for making laser module |
CN103050870B (zh) * | 2012-10-17 | 2015-07-15 | 北京工业大学 | 可光纤输出的微片激光器 |
JP6281935B2 (ja) * | 2013-10-25 | 2018-02-21 | 大学共同利用機関法人自然科学研究機構 | Qスイッチレーザー装置 |
FR3025661B1 (fr) * | 2014-09-05 | 2016-11-25 | Oxxius | Systeme de generation de faisceau laser par effet non lineaire a base de cavite microchip resonante |
EP3680998B1 (de) | 2017-09-05 | 2023-06-14 | National Institutes for Quantum Science and Technology | Laservorrichtung, lichtquelle und messvorrichtung |
JP6771442B2 (ja) * | 2017-09-20 | 2020-10-21 | 株式会社東芝 | 光学素子 |
FR3078571B1 (fr) * | 2018-03-01 | 2020-02-07 | Blue Industry And Science | Oscillateur parametrique optique |
JP7343914B2 (ja) * | 2021-01-14 | 2023-09-13 | 大学共同利用機関法人自然科学研究機構 | レーザ発振器 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4723257A (en) | 1986-05-19 | 1988-02-02 | Spectra-Physics, Inc. | Laser diode pumped solid state laser with miniaturized laser head |
US5256164A (en) * | 1988-02-02 | 1993-10-26 | Massachusetts Institute Of Technology | Method of fabricating a microchip laser |
US4860304A (en) | 1988-02-02 | 1989-08-22 | Massachusetts Institute Of Technology | Solid state microlaser |
US5265116A (en) * | 1988-02-02 | 1993-11-23 | Massachusetts Institute Of Technology | Microchip laser |
US4953166A (en) * | 1988-02-02 | 1990-08-28 | Massachusetts Institute Of Technology | Microchip laser |
US4847851A (en) | 1988-05-19 | 1989-07-11 | University Of South Florida | Butt-coupled single transverse mode diode pumped laser |
US4982405A (en) | 1989-09-07 | 1991-01-01 | Massachusette Institute Of Technology | Coupled-cavity Q-switched laser |
US5132977A (en) | 1989-09-07 | 1992-07-21 | Massachusetts Institute Of Technology | Coupled-cavity Q-switched laser |
US5341393A (en) | 1990-05-10 | 1994-08-23 | Fuji Photo Film Co., Ltd. | Laser-diode-pumped solid-state laser |
US5187714A (en) | 1990-10-19 | 1993-02-16 | Fuji Photo Film Co., Ltd. | Laser-diode-pumped solid-state laser |
US5119382A (en) | 1990-12-24 | 1992-06-02 | Mcdonnell Douglas Corporation | Tetravalent chromium doped passive Q-switch |
US5315433A (en) | 1991-02-28 | 1994-05-24 | Fuji Photo Film Co., Ltd. | Optical wavelength converting apparatus |
JP2654726B2 (ja) | 1991-09-11 | 1997-09-17 | 富士写真フイルム株式会社 | レーザーダイオードポンピング固体レーザー |
US5278855A (en) | 1992-05-11 | 1994-01-11 | At&T Bell Laboratories | Broadband semiconductor saturable absorber |
US5289491A (en) * | 1993-03-22 | 1994-02-22 | Amoco Corporation | Intracavity harmonic sub-resonator with extended phase matching range |
JPH09502054A (ja) * | 1993-08-26 | 1997-02-25 | レーザー パワー コーポレーション | 深青色のマイクロレーザー |
US5425039A (en) * | 1994-02-24 | 1995-06-13 | Micron Optics, Inc. | Single-frequency fiber Fabry-Perot micro lasers |
US5388114A (en) * | 1994-03-17 | 1995-02-07 | Polaroid Corporation | Miniaturized self-Q-switched frequency-doubled laser |
US5511085A (en) * | 1994-09-02 | 1996-04-23 | Light Solutions Corporation | Passively stabilized intracavity doubling laser |
SE504584C2 (sv) | 1994-12-07 | 1997-03-10 | Fredrik Laurell | Anordning för alstring av frekvensdubblerat laserljus medelst kvasifasmatchning |
FR2734094B1 (fr) * | 1995-05-12 | 1997-06-06 | Commissariat Energie Atomique | Emetteur infrarouge monolithique a semi-conducteur pompe par un microlaser solide declenche |
FR2734093B1 (fr) * | 1995-05-12 | 1997-06-06 | Commissariat Energie Atomique | Oscillateur parametrique optique monolithique pompe par un microlaser |
FR2734092B1 (fr) * | 1995-05-12 | 1997-06-06 | Commissariat Energie Atomique | Microlaser monolithique declenche et materiau non lineaire intracavite |
GB2300964B (en) * | 1995-05-13 | 1999-11-10 | I E Optomech Limited | Monolithic laser |
US5585962A (en) * | 1995-06-07 | 1996-12-17 | Amoco Corporation | External resonant frequency mixers based on degenerate and half-degenerate resonators |
US5982789A (en) * | 1995-11-22 | 1999-11-09 | Light Solutions Corporation | Pulsed laser with passive stabilization |
-
1996
- 1996-09-05 SE SE9603234A patent/SE510442C2/sv unknown
-
1997
- 1997-09-02 EP EP97939284A patent/EP0923799B1/de not_active Expired - Lifetime
- 1997-09-02 JP JP10512566A patent/JP2000517481A/ja active Pending
- 1997-09-02 AT AT97939284T patent/ATE281704T1/de not_active IP Right Cessation
- 1997-09-02 CA CA002264753A patent/CA2264753A1/en not_active Abandoned
- 1997-09-02 US US09/242,892 patent/US6259711B1/en not_active Expired - Lifetime
- 1997-09-02 WO PCT/SE1997/001466 patent/WO1998010497A1/en active IP Right Grant
- 1997-09-02 DE DE69731475T patent/DE69731475T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6259711B1 (en) | 2001-07-10 |
ATE281704T1 (de) | 2004-11-15 |
DE69731475T2 (de) | 2005-10-20 |
DE69731475D1 (de) | 2004-12-09 |
EP0923799A1 (de) | 1999-06-23 |
CA2264753A1 (en) | 1998-03-12 |
WO1998010497A1 (en) | 1998-03-12 |
JP2000517481A (ja) | 2000-12-26 |
EP0923799B1 (de) | 2004-11-03 |
SE9603234D0 (sv) | 1996-09-05 |
SE9603234L (sv) | 1998-03-06 |
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