SE510442C2 - Mikrochipslaser - Google Patents

Mikrochipslaser

Info

Publication number
SE510442C2
SE510442C2 SE9603234A SE9603234A SE510442C2 SE 510442 C2 SE510442 C2 SE 510442C2 SE 9603234 A SE9603234 A SE 9603234A SE 9603234 A SE9603234 A SE 9603234A SE 510442 C2 SE510442 C2 SE 510442C2
Authority
SE
Sweden
Prior art keywords
laser
microchip
cavity
phase matching
elements
Prior art date
Application number
SE9603234A
Other languages
English (en)
Swedish (sv)
Other versions
SE9603234D0 (sv
SE9603234L (sv
Inventor
Fredrik Laurell
Original Assignee
Fredrik Laurell
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fredrik Laurell filed Critical Fredrik Laurell
Priority to SE9603234A priority Critical patent/SE510442C2/sv
Publication of SE9603234D0 publication Critical patent/SE9603234D0/xx
Priority to US09/242,892 priority patent/US6259711B1/en
Priority to JP10512566A priority patent/JP2000517481A/ja
Priority to AT97939284T priority patent/ATE281704T1/de
Priority to EP97939284A priority patent/EP0923799B1/de
Priority to PCT/SE1997/001466 priority patent/WO1998010497A1/en
Priority to DE69731475T priority patent/DE69731475T2/de
Priority to CA002264753A priority patent/CA2264753A1/en
Publication of SE9603234L publication Critical patent/SE9603234L/
Publication of SE510442C2 publication Critical patent/SE510442C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G02F1/3544—Particular phase matching techniques
    • G02F1/3548—Quasi phase matching [QPM], e.g. using a periodic domain inverted structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0615—Shape of end-face
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08018—Mode suppression
    • H01S3/08022—Longitudinal modes
    • H01S3/08031—Single-mode emission
    • H01S3/08036—Single-mode emission using intracavity dispersive, polarising or birefringent elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/0813—Configuration of resonator
    • H01S3/0815—Configuration of resonator having 3 reflectors, e.g. V-shaped resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
    • H01S3/113—Q-switching using intracavity saturable absorbers

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
SE9603234A 1996-09-05 1996-09-05 Mikrochipslaser SE510442C2 (sv)

Priority Applications (8)

Application Number Priority Date Filing Date Title
SE9603234A SE510442C2 (sv) 1996-09-05 1996-09-05 Mikrochipslaser
US09/242,892 US6259711B1 (en) 1996-09-05 1997-09-02 Laser
JP10512566A JP2000517481A (ja) 1996-09-05 1997-09-02 レーザ
AT97939284T ATE281704T1 (de) 1996-09-05 1997-09-02 Frequenzverdoppelter laser mit einem quasiphasenangepassten nichtlinearen element innerhalb des resonators
EP97939284A EP0923799B1 (de) 1996-09-05 1997-09-02 Frequenzverdoppelter Laser mit einem quasiphasenangepassten nichtlinearen Element innerhalb des Resonators
PCT/SE1997/001466 WO1998010497A1 (en) 1996-09-05 1997-09-02 Laser
DE69731475T DE69731475T2 (de) 1996-09-05 1997-09-02 Frequenzverdoppelter Laser mit einem quasiphasenangepassten nichtlinearen Element innerhalb des Resonators
CA002264753A CA2264753A1 (en) 1996-09-05 1997-09-02 Laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9603234A SE510442C2 (sv) 1996-09-05 1996-09-05 Mikrochipslaser

Publications (3)

Publication Number Publication Date
SE9603234D0 SE9603234D0 (sv) 1996-09-05
SE9603234L SE9603234L (sv) 1998-03-06
SE510442C2 true SE510442C2 (sv) 1999-05-25

Family

ID=20403783

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9603234A SE510442C2 (sv) 1996-09-05 1996-09-05 Mikrochipslaser

Country Status (8)

Country Link
US (1) US6259711B1 (de)
EP (1) EP0923799B1 (de)
JP (1) JP2000517481A (de)
AT (1) ATE281704T1 (de)
CA (1) CA2264753A1 (de)
DE (1) DE69731475T2 (de)
SE (1) SE510442C2 (de)
WO (1) WO1998010497A1 (de)

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FR2795248B1 (fr) * 1999-06-21 2004-11-12 Lprl Laboratoire De Physique D Source monochromatique comprenant un materiau optiquement actif
DE19939774C2 (de) * 1999-08-21 2001-06-28 Rofin Sinar Laser Gmbh Festkörperlaser (Scheibenlaser) mit direktem Kontakt des aktiven Mediums zu einer Kühlmittelflüssigkeit
US6373865B1 (en) * 2000-02-01 2002-04-16 John E. Nettleton Pseudo-monolithic laser with an intracavity optical parametric oscillator
US6633596B1 (en) * 2000-05-31 2003-10-14 University Corporation For Atmospheric Research Frequency stable pulsed laser
EP1304777B1 (de) * 2001-09-28 2007-07-25 The Furukawa Electric Co., Ltd. Optisches Filter, Lasermodul und Wellenlängenverriegelungsmodul
DE10204796A1 (de) * 2002-02-01 2003-08-21 Ozygus Bernd Lasergainmodul
US20040076204A1 (en) * 2002-10-16 2004-04-22 Kruschwitz Brian E. External cavity organic laser
JP2004296706A (ja) * 2003-03-26 2004-10-21 Sony Corp 光共振器及びレーザ発振器
TW574031B (en) * 2003-04-11 2004-02-01 Applied Biophotonics Corp Quasi-phase-matching photodynamic therapy (PDT) and photodynamic diagnosis (PDD) laser sources
JP2006310743A (ja) * 2005-03-31 2006-11-09 Topcon Corp レーザ発振装置
FR2884651B1 (fr) * 2005-04-15 2007-11-30 Oxxius Sa Sa "dispositif laser lineaire monolithique monofrequence, et systeme comprenant un tel dispositif"
DE502005005756D1 (de) * 2005-05-12 2008-12-04 Innovavent Gmbh Verwendung eines Scheibenlasers zur Kristallisation von Siliziumschichten
JP4532584B2 (ja) * 2005-05-27 2010-08-25 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 内燃機関用の点火装置
JP2007158020A (ja) * 2005-12-05 2007-06-21 Ricoh Co Ltd 光学素子
KR20070076251A (ko) * 2006-01-18 2007-07-24 삼성전자주식회사 외부 공진기형 면발광 레이저
US7835409B2 (en) * 2006-03-03 2010-11-16 Panasonic Corporation Illumination light source device and laser projection device
US7570676B2 (en) * 2006-05-09 2009-08-04 Spectralus Corporation Compact efficient and robust ultraviolet solid-state laser sources based on nonlinear frequency conversion in periodically poled materials
KR100764424B1 (ko) * 2006-08-30 2007-10-05 삼성전기주식회사 파장변환 레이저 장치 및 이에 사용되는 비선형 광학결정
JP2008177226A (ja) * 2007-01-16 2008-07-31 Cyber Laser Kk レーザパルス発生装置及び方法
US7573930B2 (en) * 2007-06-14 2009-08-11 Innovavent Gmbh Anamorphotic solid-sate laser
JP2009259914A (ja) * 2008-04-14 2009-11-05 Sony Corp レーザ装置、レーザディスプレイ装置およびレーザ照射装置
JP2010109070A (ja) * 2008-10-29 2010-05-13 Osaka Prefecture Univ 多波長レーザー発振装置およびそれを備えてなるテラヘルツ波発生装置
EP2680377B1 (de) 2012-06-29 2017-05-10 C2C Link Corporation Verfahren zur Herstellung eines Lasermoduls
US9197027B2 (en) 2012-07-05 2015-11-24 C2C Link Corporation Method for making laser module
CN103050870B (zh) * 2012-10-17 2015-07-15 北京工业大学 可光纤输出的微片激光器
JP6281935B2 (ja) * 2013-10-25 2018-02-21 大学共同利用機関法人自然科学研究機構 Ｑスイッチレーザー装置
FR3025661B1 (fr) * 2014-09-05 2016-11-25 Oxxius Systeme de generation de faisceau laser par effet non lineaire a base de cavite microchip resonante
EP3680998B1 (de) 2017-09-05 2023-06-14 National Institutes for Quantum Science and Technology Laservorrichtung, lichtquelle und messvorrichtung
JP6771442B2 (ja) * 2017-09-20 2020-10-21 株式会社東芝 光学素子
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JP7343914B2 (ja) * 2021-01-14 2023-09-13 大学共同利用機関法人自然科学研究機構 レーザ発振器

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Also Published As

Publication number Publication date
US6259711B1 (en) 2001-07-10
ATE281704T1 (de) 2004-11-15
DE69731475T2 (de) 2005-10-20
DE69731475D1 (de) 2004-12-09
EP0923799A1 (de) 1999-06-23
CA2264753A1 (en) 1998-03-12
WO1998010497A1 (en) 1998-03-12
JP2000517481A (ja) 2000-12-26
EP0923799B1 (de) 2004-11-03
SE9603234D0 (sv) 1996-09-05
SE9603234L (sv) 1998-03-06

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