SE304062B - - Google Patents

Info

Publication number
SE304062B
SE304062B SE4030/64A SE403064A SE304062B SE 304062 B SE304062 B SE 304062B SE 4030/64 A SE4030/64 A SE 4030/64A SE 403064 A SE403064 A SE 403064A SE 304062 B SE304062 B SE 304062B
Authority
SE
Sweden
Application number
SE4030/64A
Inventor
J Schramm
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE304062B publication Critical patent/SE304062B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/017Clean surfaces
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/037Diffusion-deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/043Dual dielectric
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/906Cleaning of wafer as interim step

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
SE4030/64A 1963-04-02 1964-04-01 SE304062B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US269979A US3281915A (en) 1963-04-02 1963-04-02 Method of fabricating a semiconductor device

Publications (1)

Publication Number Publication Date
SE304062B true SE304062B (xx) 1968-09-16

Family

ID=23029390

Family Applications (1)

Application Number Title Priority Date Filing Date
SE4030/64A SE304062B (xx) 1963-04-02 1964-04-01

Country Status (7)

Country Link
US (1) US3281915A (xx)
JP (1) JPS4937303B1 (xx)
BE (1) BE646063A (xx)
DE (1) DE1489240B1 (xx)
GB (1) GB1055724A (xx)
NL (1) NL142283B (xx)
SE (1) SE304062B (xx)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1250790B (de) * 1963-12-13 1967-09-28 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Verfahren zur Herstellung diffundierter Zonen von Verunreinigungen in einem Halbleiterkörper
US3342650A (en) * 1964-02-10 1967-09-19 Hitachi Ltd Method of making semiconductor devices by double masking
US3357902A (en) * 1964-05-01 1967-12-12 Fairchild Camera Instr Co Use of anodizing to reduce channelling on semiconductor material
US3490963A (en) * 1964-05-18 1970-01-20 Sprague Electric Co Production of planar semiconductor devices by masking and diffusion
GB1124762A (en) * 1965-01-08 1968-08-21 Lucas Industries Ltd Semi-conductor devices
US3389023A (en) * 1966-01-14 1968-06-18 Ibm Methods of making a narrow emitter transistor by masking and diffusion
US3632433A (en) * 1967-03-29 1972-01-04 Hitachi Ltd Method for producing a semiconductor device
US3545076A (en) * 1967-08-22 1970-12-08 Bosch Gmbh Robert Process of forming contacts on electrical parts,particularly silicon semiconductors
DE2047998A1 (de) * 1970-09-30 1972-04-06 Licentia Gmbh Verfahren zum Herstellen einer Planaranordnung
US3776786A (en) * 1971-03-18 1973-12-04 Motorola Inc Method of producing high speed transistors and resistors simultaneously
JPS5248055B2 (xx) * 1973-11-12 1977-12-07
US3933541A (en) * 1974-01-22 1976-01-20 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor planar device
US4186032A (en) * 1976-09-23 1980-01-29 Rca Corp. Method for cleaning and drying semiconductors
DE2838928A1 (de) * 1978-09-07 1980-03-20 Ibm Deutschland Verfahren zum dotieren von siliciumkoerpern mit bor
US6004399A (en) * 1996-07-01 1999-12-21 Cypress Semiconductor Corporation Ultra-low particle semiconductor cleaner for removal of particle contamination and residues from surface oxide formation on semiconductor wafers
JP3595441B2 (ja) * 1997-12-29 2004-12-02 三菱電機株式会社 塩酸過水を用いた洗浄方法
EP2337089A3 (en) * 2009-12-17 2013-12-11 Rohm and Haas Electronic Materials LLC Improved method of texturing semiconductor substrates
WO2016018307A1 (en) * 2014-07-30 2016-02-04 Hewlett-Packard Indigo, B.V. Cleaning electrophotographic printing drums

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL210216A (xx) * 1955-12-02
NL95308C (xx) * 1956-02-29 1960-09-15
DE1040134B (de) * 1956-10-25 1958-10-02 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen mit Halbleiterkoerpern mit p-n-UEbergang
DE1287009C2 (de) * 1957-08-07 1975-01-09 Western Electric Co. Inc., New York, N.Y. (V.St.A.) Verfahren zur herstellung von halbleiterkoerpern
DE1134357B (de) * 1958-09-22 1962-08-09 Siemens Ag Verfahren zur Reinigung von einkristallinen Halbleiterkoerpern
US2948642A (en) * 1959-05-08 1960-08-09 Bell Telephone Labor Inc Surface treatment of silicon devices
US2953486A (en) * 1959-06-01 1960-09-20 Bell Telephone Labor Inc Junction formation by thermal oxidation of semiconductive material
US3147152A (en) * 1960-01-28 1964-09-01 Western Electric Co Diffusion control in semiconductive bodies
US3085033A (en) * 1960-03-08 1963-04-09 Bell Telephone Labor Inc Fabrication of semiconductor devices
GB920306A (en) * 1960-08-25 1963-03-06 Pacific Semiconductors Inc Fabrication method for semiconductor devices
US3055776A (en) * 1960-12-12 1962-09-25 Pacific Semiconductors Inc Masking technique

Also Published As

Publication number Publication date
JPS4937303B1 (xx) 1974-10-08
NL6403503A (xx) 1964-10-05
NL142283B (nl) 1974-05-15
GB1055724A (en) 1967-01-18
BE646063A (xx) 1964-07-31
US3281915A (en) 1966-11-01
DE1489240B1 (de) 1971-11-11

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