GB920306A - Fabrication method for semiconductor devices - Google Patents
Fabrication method for semiconductor devicesInfo
- Publication number
- GB920306A GB920306A GB932961A GB932961A GB920306A GB 920306 A GB920306 A GB 920306A GB 932961 A GB932961 A GB 932961A GB 932961 A GB932961 A GB 932961A GB 920306 A GB920306 A GB 920306A
- Authority
- GB
- United Kingdom
- Prior art keywords
- oxide layer
- oxide
- solution
- stripped
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 abstract 1
- 229910017115 AlSb Inorganic materials 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910005542 GaSb Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 abstract 1
- 238000007654 immersion Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000001632 sodium acetate Substances 0.000 abstract 1
- 235000017281 sodium acetate Nutrition 0.000 abstract 1
- 239000001509 sodium citrate Substances 0.000 abstract 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 abstract 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemically Coating (AREA)
Abstract
920,306. Coating with metals; modifying metallic surfaces. PACIFIC SEMICONDUC. TORS Inc. March 14, 1961 [Aug. 25, 1960], No. 9329/61. Class 82 (1). [Also in Group XXXVI] An oxide masking layer is formed on the surface of a semi-conductor such as Si, Ge, InSb, GaSb, AlSb, InAs, GaAs, CaP or InP by heating in air, stripping this first oxide layer and forming a second oxide layer which is stripped in selected areas for further treatment such as metal coating or diffusion of active impurities. In the example an interleaved NPN transistor 10 is made by diffusing phosphorus into N type silicon to form N + collector region 14, and the P type region 11 is made by diffusing boron. The oxide layer formed on region 11 during this diffusion process is stripped in 48% HF and a fresh oxide layer 17 free of contaminants is then formed by heating in air at 850‹ C. to 1100‹ C. This oxide is removed according to the pattern of Fig. 2 by etching in HF and phosphorus is diffused into the exposed surface 18 at 1000‹ C. to 1265‹ C. in a nitrogen atmosphere. The remaining oxide is then removed in HF. A further oxide layer may be formed and stripped according to a required pattern, preferably by a photo resist method ; to expose the surface 18 of P type region 11 (Fig. 9, not shown). This surface is chemically plated by immersion in a solution containing nickelous chloride, sodium citrate, sodium acetate and sodium hypophosphite in a ratio of 30 : 15 : 5 : 10 gms./litre heated to 95 ‹ C. A solution of gold chloride, HCl, and HF in a ratio of 16: 30: 10 gms./litre and a solution of 1 part HF to 4 parts water are added to the first solution and a gold/nickel deposit is formed on surface 18 as ohmic contacts.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5189460A | 1960-08-25 | 1960-08-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB920306A true GB920306A (en) | 1963-03-06 |
Family
ID=21974016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB932961A Expired GB920306A (en) | 1960-08-25 | 1961-03-14 | Fabrication method for semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB920306A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3281915A (en) * | 1963-04-02 | 1966-11-01 | Rca Corp | Method of fabricating a semiconductor device |
| US3490963A (en) * | 1964-05-18 | 1970-01-20 | Sprague Electric Co | Production of planar semiconductor devices by masking and diffusion |
-
1961
- 1961-03-14 GB GB932961A patent/GB920306A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3281915A (en) * | 1963-04-02 | 1966-11-01 | Rca Corp | Method of fabricating a semiconductor device |
| US3490963A (en) * | 1964-05-18 | 1970-01-20 | Sprague Electric Co | Production of planar semiconductor devices by masking and diffusion |
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