SE0104238D0 - Method and apparatus for patterning a workpiece - Google Patents
Method and apparatus for patterning a workpieceInfo
- Publication number
- SE0104238D0 SE0104238D0 SE0104238A SE0104238A SE0104238D0 SE 0104238 D0 SE0104238 D0 SE 0104238D0 SE 0104238 A SE0104238 A SE 0104238A SE 0104238 A SE0104238 A SE 0104238A SE 0104238 D0 SE0104238 D0 SE 0104238D0
- Authority
- SE
- Sweden
- Prior art keywords
- workpiece
- computer controlled
- pixels
- relates
- controlled reticle
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2057—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using an addressed light valve, e.g. a liquid crystal device
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Facsimile Heads (AREA)
- Facsimile Scanning Arrangements (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0104238A SE0104238D0 (sv) | 2001-12-14 | 2001-12-14 | Method and apparatus for patterning a workpiece |
US10/498,713 US7405414B2 (en) | 2001-12-14 | 2002-12-11 | Method and apparatus for patterning a workpiece |
CNB028250346A CN1288503C (zh) | 2001-12-14 | 2002-12-11 | 工件构图方法和装置 |
JP2003553341A JP4360914B2 (ja) | 2001-12-14 | 2002-12-11 | 加工物にパターンを形成するための方法及び装置 |
KR1020047008908A KR100904823B1 (ko) | 2001-12-14 | 2002-12-11 | 패턴 생성, 이미징, 기록 방법 및 패턴 생성 장치, 마스크, 반도체 웨이퍼 |
AU2002359127A AU2002359127A1 (en) | 2001-12-14 | 2002-12-11 | Method and apparatus for patterning a workpiece |
EP02793638A EP1454194B1 (en) | 2001-12-14 | 2002-12-11 | Method and apparatus for patterning a workpiece |
PCT/SE2002/002310 WO2003052516A1 (en) | 2001-12-14 | 2002-12-11 | Method and apparatus for patterning a workpiece |
US10/410,874 US20030233630A1 (en) | 2001-12-14 | 2003-04-10 | Methods and systems for process control of corner feature embellishment |
US10/462,010 US7106490B2 (en) | 2001-12-14 | 2003-06-12 | Methods and systems for improved boundary contrast |
US11/272,925 US7158280B2 (en) | 2001-12-14 | 2005-11-14 | Methods and systems for improved boundary contrast |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0104238A SE0104238D0 (sv) | 2001-12-14 | 2001-12-14 | Method and apparatus for patterning a workpiece |
Publications (1)
Publication Number | Publication Date |
---|---|
SE0104238D0 true SE0104238D0 (sv) | 2001-12-14 |
Family
ID=20286340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE0104238A SE0104238D0 (sv) | 2001-12-14 | 2001-12-14 | Method and apparatus for patterning a workpiece |
Country Status (8)
Country | Link |
---|---|
US (1) | US7405414B2 (sv) |
EP (1) | EP1454194B1 (sv) |
JP (1) | JP4360914B2 (sv) |
KR (1) | KR100904823B1 (sv) |
CN (1) | CN1288503C (sv) |
AU (1) | AU2002359127A1 (sv) |
SE (1) | SE0104238D0 (sv) |
WO (1) | WO2003052516A1 (sv) |
Families Citing this family (63)
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US7525659B2 (en) * | 2003-01-15 | 2009-04-28 | Negevtech Ltd. | System for detection of water defects |
US7063920B2 (en) * | 2003-05-16 | 2006-06-20 | Asml Holding, N.V. | Method for the generation of variable pitch nested lines and/or contact holes using fixed size pixels for direct-write lithographic systems |
WO2004111701A1 (en) * | 2003-06-12 | 2004-12-23 | Micronic Laser Systems Ab | Method for high precision printing of patterns |
US7186486B2 (en) * | 2003-08-04 | 2007-03-06 | Micronic Laser Systems Ab | Method to pattern a substrate |
US7410736B2 (en) * | 2003-09-30 | 2008-08-12 | Asml Holding N.V. | Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system not utilizing overlap of the exposure zones |
US6876440B1 (en) * | 2003-09-30 | 2005-04-05 | Asml Holding N.V. | Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system utilizing overlap of exposure zones with attenuation of the aerial image in the overlap region |
US7023526B2 (en) * | 2003-09-30 | 2006-04-04 | Asml Holding N.V. | Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system utilizing overlap without an explicit attenuation |
US7006196B2 (en) * | 2003-12-15 | 2006-02-28 | Agilent Technologies, Inc. | Real time image resizing for dynamic digital photolithography |
US6963434B1 (en) | 2004-04-30 | 2005-11-08 | Asml Holding N.V. | System and method for calculating aerial image of a spatial light modulator |
US7529421B2 (en) * | 2004-07-01 | 2009-05-05 | Applied Materials, Inc. | Optical proximity correction in raster scan printing based on corner matching templates |
US7407252B2 (en) * | 2004-07-01 | 2008-08-05 | Applied Materials, Inc. | Area based optical proximity correction in raster scan printing |
WO2006006148A2 (en) * | 2004-07-12 | 2006-01-19 | Negevtech Ltd. | Multi mode inspection method and apparatus |
US7500218B2 (en) * | 2004-08-17 | 2009-03-03 | Asml Netherlands B.V. | Lithographic apparatus, method, and computer program product for generating a mask pattern and device manufacturing method using same |
US7457547B2 (en) * | 2004-11-08 | 2008-11-25 | Optium Australia Pty Limited | Optical calibration system and method |
US7713667B2 (en) | 2004-11-30 | 2010-05-11 | Asml Holding N.V. | System and method for generating pattern data used to control a pattern generator |
US7209216B2 (en) * | 2005-03-25 | 2007-04-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method utilizing dynamic correction for magnification and position in maskless lithography |
JP4691653B2 (ja) * | 2005-04-07 | 2011-06-01 | 国立大学法人東北大学 | データ生成方法、データ生成装置、及びプログラム |
JP4991729B2 (ja) * | 2005-09-26 | 2012-08-01 | マイクロニック レーザー システムズ アクチボラゲット | 設計データの多数の形態に基づいたパターン生成のための方法及びシステム |
US7528932B2 (en) * | 2005-12-21 | 2009-05-05 | Micronic Laser Systems Ab | SLM direct writer |
US7508491B2 (en) * | 2006-04-12 | 2009-03-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method utilized to reduce quantization influence of datapath SLM interface to dose uniformity |
US8031931B2 (en) * | 2006-04-24 | 2011-10-04 | Applied Materials South East Asia Pte. Ltd. | Printed fourier filtering in optical inspection tools |
DE102006019963B4 (de) * | 2006-04-28 | 2023-12-07 | Envisiontec Gmbh | Vorrichtung und Verfahren zur Herstellung eines dreidimensionalen Objekts durch schichtweises Verfestigen eines unter Einwirkung von elektromagnetischer Strahlung verfestigbaren Materials mittels Maskenbelichtung |
DE102006019964C5 (de) * | 2006-04-28 | 2021-08-26 | Envisiontec Gmbh | Vorrichtung und Verfahren zur Herstellung eines dreidimensionalen Objekts mittels Maskenbelichtung |
JPWO2007142350A1 (ja) | 2006-06-09 | 2009-10-29 | 株式会社ニコン | パターン形成方法及びパターン形成装置、露光方法及び露光装置、並びにデバイス製造方法 |
CN101271483B (zh) * | 2006-09-13 | 2012-02-22 | Asml蒙片工具有限公司 | 分解图案的方法、器件制造方法及产生掩模的方法 |
US7714998B2 (en) * | 2006-11-28 | 2010-05-11 | Applied Materials South East Asia Pte. Ltd. | Image splitting in optical inspection systems |
US7719674B2 (en) * | 2006-11-28 | 2010-05-18 | Applied Materials South East Asia Pte. Ltd. | Image splitting in optical inspection systems |
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WO2009147202A1 (en) * | 2008-06-04 | 2009-12-10 | Mapper Lithography Ip B.V. | Writing strategy |
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JP6209369B2 (ja) * | 2013-06-13 | 2017-10-04 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置 |
JP6211435B2 (ja) * | 2014-02-26 | 2017-10-11 | 株式会社アドバンテスト | 半導体装置の製造方法 |
JP6337511B2 (ja) * | 2014-02-26 | 2018-06-06 | 大日本印刷株式会社 | マルチビーム電子線描画装置を用いたパターニング方法 |
KR102427154B1 (ko) * | 2014-08-01 | 2022-07-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 3d 패턴 형성을 위한 디지털 그레이 톤 리소그래피 |
JP6428518B2 (ja) | 2014-09-05 | 2018-11-28 | 株式会社ニューフレアテクノロジー | データ生成装置、エネルギービーム描画装置、及びエネルギービーム描画方法 |
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-
2001
- 2001-12-14 SE SE0104238A patent/SE0104238D0/sv unknown
-
2002
- 2002-12-11 CN CNB028250346A patent/CN1288503C/zh not_active Expired - Lifetime
- 2002-12-11 EP EP02793638A patent/EP1454194B1/en not_active Expired - Lifetime
- 2002-12-11 JP JP2003553341A patent/JP4360914B2/ja not_active Expired - Lifetime
- 2002-12-11 US US10/498,713 patent/US7405414B2/en active Active
- 2002-12-11 KR KR1020047008908A patent/KR100904823B1/ko active IP Right Grant
- 2002-12-11 AU AU2002359127A patent/AU2002359127A1/en not_active Abandoned
- 2002-12-11 WO PCT/SE2002/002310 patent/WO2003052516A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
KR100904823B1 (ko) | 2009-06-25 |
US7405414B2 (en) | 2008-07-29 |
CN1288503C (zh) | 2006-12-06 |
KR20040065243A (ko) | 2004-07-21 |
US20050084766A1 (en) | 2005-04-21 |
JP4360914B2 (ja) | 2009-11-11 |
EP1454194B1 (en) | 2012-06-27 |
AU2002359127A1 (en) | 2003-06-30 |
JP2005513770A (ja) | 2005-05-12 |
CN1605046A (zh) | 2005-04-06 |
WO2003052516A1 (en) | 2003-06-26 |
EP1454194A1 (en) | 2004-09-08 |
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