ATE467858T1 - Methode zur reduzierung des optischen naheffekts in lithographischen verfahren - Google Patents

Methode zur reduzierung des optischen naheffekts in lithographischen verfahren

Info

Publication number
ATE467858T1
ATE467858T1 AT99950074T AT99950074T ATE467858T1 AT E467858 T1 ATE467858 T1 AT E467858T1 AT 99950074 T AT99950074 T AT 99950074T AT 99950074 T AT99950074 T AT 99950074T AT E467858 T1 ATE467858 T1 AT E467858T1
Authority
AT
Austria
Prior art keywords
feature
main feature
transferred
reducing
lithographic processes
Prior art date
Application number
AT99950074T
Other languages
English (en)
Inventor
Christophe Pierrat
James Burdorf
William Baggenstoss
William Stanton
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE467858T1 publication Critical patent/ATE467858T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
AT99950074T 1998-10-01 1999-09-30 Methode zur reduzierung des optischen naheffekts in lithographischen verfahren ATE467858T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/164,786 US6120952A (en) 1998-10-01 1998-10-01 Methods of reducing proximity effects in lithographic processes
PCT/US1999/022815 WO2000019272A1 (en) 1998-10-01 1999-09-30 Methods of reducing proximity effects in lithographic processes

Publications (1)

Publication Number Publication Date
ATE467858T1 true ATE467858T1 (de) 2010-05-15

Family

ID=22596084

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99950074T ATE467858T1 (de) 1998-10-01 1999-09-30 Methode zur reduzierung des optischen naheffekts in lithographischen verfahren

Country Status (8)

Country Link
US (3) US6120952A (de)
EP (1) EP1125167B1 (de)
JP (1) JP3461336B2 (de)
KR (1) KR20010075482A (de)
AT (1) ATE467858T1 (de)
AU (1) AU6280799A (de)
DE (1) DE69942370D1 (de)
WO (1) WO2000019272A1 (de)

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US7001693B2 (en) * 2003-02-28 2006-02-21 International Business Machines Corporation Binary OPC for assist feature layout optimization
US6964032B2 (en) * 2003-02-28 2005-11-08 International Business Machines Corporation Pitch-based subresolution assist feature design
US7205633B2 (en) * 2003-06-27 2007-04-17 Micron Technology, Inc. Capacitor layout orientation
US7558419B1 (en) 2003-08-14 2009-07-07 Brion Technologies, Inc. System and method for detecting integrated circuit pattern defects
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US7073162B2 (en) * 2003-10-31 2006-07-04 Mentor Graphics Corporation Site control for OPC
DE10356693A1 (de) * 2003-11-27 2005-07-14 Infineon Technologies Ag Verfahren zum Erzeugen eines Abbildungsfehler vermeidenden Maskenlayouts für eine Maske
US7536660B2 (en) * 2004-02-24 2009-05-19 Konstantinos Adam OPC simulation model using SOCS decomposition of edge fragments
US7539954B2 (en) * 2004-02-24 2009-05-26 Konstantinos Adam OPC simulation model using SOCS decomposition of edge fragments
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US7234130B2 (en) * 2004-02-25 2007-06-19 James Word Long range corrections in integrated circuit layout designs
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US7459248B2 (en) * 2005-02-24 2008-12-02 James Word Performing OPC on structures with virtual edges
US7493587B2 (en) * 2005-03-02 2009-02-17 James Word Chromeless phase shifting mask for integrated circuits using interior region
US8037429B2 (en) * 2005-03-02 2011-10-11 Mentor Graphics Corporation Model-based SRAF insertion
US7381654B2 (en) * 2005-05-31 2008-06-03 Taiwan Semiconductor Manufacturing Co. Method for fabricating right-angle holes in a substrate
US7282401B2 (en) 2005-07-08 2007-10-16 Micron Technology, Inc. Method and apparatus for a self-aligned recessed access device (RAD) transistor gate
US7867851B2 (en) 2005-08-30 2011-01-11 Micron Technology, Inc. Methods of forming field effect transistors on substrates
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US7700441B2 (en) 2006-02-02 2010-04-20 Micron Technology, Inc. Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates
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US7712068B2 (en) * 2006-02-17 2010-05-04 Zhuoxiang Ren Computation of electrical properties of an IC layout
US7602001B2 (en) 2006-07-17 2009-10-13 Micron Technology, Inc. Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells
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US7802226B2 (en) * 2007-01-08 2010-09-21 Mentor Graphics Corporation Data preparation for multiple mask printing
US7739650B2 (en) * 2007-02-09 2010-06-15 Juan Andres Torres Robles Pre-bias optical proximity correction
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Also Published As

Publication number Publication date
US20010023045A1 (en) 2001-09-20
EP1125167B1 (de) 2010-05-12
WO2000019272B1 (en) 2000-05-25
US6319644B2 (en) 2001-11-20
WO2000019272A1 (en) 2000-04-06
EP1125167A1 (de) 2001-08-22
JP3461336B2 (ja) 2003-10-27
DE69942370D1 (de) 2010-06-24
US20010002304A1 (en) 2001-05-31
AU6280799A (en) 2000-04-17
JP2002526792A (ja) 2002-08-20
US6120952A (en) 2000-09-19
US6284419B2 (en) 2001-09-04
KR20010075482A (ko) 2001-08-09

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