RU2011146934A - Модуль светодиода с увеличенными размерами элементов - Google Patents

Модуль светодиода с увеличенными размерами элементов Download PDF

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RU2011146934A
RU2011146934A RU2011146934/28A RU2011146934A RU2011146934A RU 2011146934 A RU2011146934 A RU 2011146934A RU 2011146934/28 A RU2011146934/28 A RU 2011146934/28A RU 2011146934 A RU2011146934 A RU 2011146934A RU 2011146934 A RU2011146934 A RU 2011146934A
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light emitter
substrate
crystal
led
width
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RU2011146934/28A
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RU2538354C2 (ru
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Дэвид ЭМЕРСОН
Бернд КЕЛЛЕР
Кристофер ХАССЕЛЛ
Эмбер СОЛТЕР
Брайан Коллинз
Майкл БЕРГМАНН
Джон ЭДМОНД
Эрик ТАРСА
Питер ЭНДРЮС
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Кри, Инк.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01087—Francium [Fr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

1. Модуль излучателя света, содержащий:подложку;кристалл излучателя света, установленный на указанной подложке; илинзу над указанным кристаллом излучателя света, причем отношение ширины этого кристалла к ширине указанной линзы в заданном направлении составляет 0,5 или более.2. Модуль излучателя света по п.1, также содержащий преобразующий материал, расположенный вблизи указанного кристалла излучателя света, причем упомянутый преобразующий материал содержит частицы фосфора, имеющие размер частиц Dбольше 10 мкм.3. Модуль излучателя света по п.1, в котором указанная подложка содержит нитрид алюминия (AlN).4. Модуль излучателя света по п.1, в котором упомянутая подложка имеет размеры примерно от 3,5×3,5 мм до 5×5 мм.5. Модуль излучателя света по п.1, в котором упомянутый кристалл излучателя света имеет размеры примерно от 0,7×0,7 мм до 3×3 мм.6. Модуль светодиода (LED), содержащий:подложку, имеющую верхнюю и нижнюю поверхности;множество верхних электропроводящих и теплопроводящих элементов на указанной верхней поверхности упомянутой подложки;кристалл светодиода на одном из упомянутых верхних элементов, причем электропроводящие элементы выполнены таким образом, чтобы рассеивать тепло от данного кристалла светодиода через большую часть верхней поверхности указанной подложки;нижний теплопроводящий элемент на указанной нижней поверхности, не имеющий электрического контакта с упомянутыми верхними элементами и выполненный с возможностью отвода тепла от упомянутой подложки; илинзу над указанным кристаллом светодиода;при этом отношение ширины указанного кристалла светодиода к ширине указанной линзы в заданном направлении сос�

Claims (12)

1. Модуль излучателя света, содержащий:
подложку;
кристалл излучателя света, установленный на указанной подложке; и
линзу над указанным кристаллом излучателя света, причем отношение ширины этого кристалла к ширине указанной линзы в заданном направлении составляет 0,5 или более.
2. Модуль излучателя света по п.1, также содержащий преобразующий материал, расположенный вблизи указанного кристалла излучателя света, причем упомянутый преобразующий материал содержит частицы фосфора, имеющие размер частиц D50 больше 10 мкм.
3. Модуль излучателя света по п.1, в котором указанная подложка содержит нитрид алюминия (AlN).
4. Модуль излучателя света по п.1, в котором упомянутая подложка имеет размеры примерно от 3,5×3,5 мм до 5×5 мм.
5. Модуль излучателя света по п.1, в котором упомянутый кристалл излучателя света имеет размеры примерно от 0,7×0,7 мм до 3×3 мм.
6. Модуль светодиода (LED), содержащий:
подложку, имеющую верхнюю и нижнюю поверхности;
множество верхних электропроводящих и теплопроводящих элементов на указанной верхней поверхности упомянутой подложки;
кристалл светодиода на одном из упомянутых верхних элементов, причем электропроводящие элементы выполнены таким образом, чтобы рассеивать тепло от данного кристалла светодиода через большую часть верхней поверхности указанной подложки;
нижний теплопроводящий элемент на указанной нижней поверхности, не имеющий электрического контакта с упомянутыми верхними элементами и выполненный с возможностью отвода тепла от упомянутой подложки; и
линзу над указанным кристаллом светодиода;
при этом отношение ширины указанного кристалла светодиода к ширине указанной линзы в заданном направлении составляет 0,5 или более.
7. Модуль излучателя света, содержащий:
подложку, содержащую нитрид алюминия (AlN);
кристалл излучателя света на указанной подложке, причем данный излучатель излучает свет с примерной средней длиной волны в диапазоне 430-460 нм; и
линзу на упомянутом кристалле излучателя света;
при этом отношение ширины упомянутого кристалла излучателя света к ширине упомянутой линзы в заданном направлении составляет 0,5 или более.
8. Модуль излучателя света, содержащий;
единичный кристалл светодиода (LED);
подложку, имеющую размеры 3,5×3,5 мм или больше; и
формованную линзу над упомянутым кристаллом светодиода на упомянутой подложке.
9. Модуль излучателя света по п.8, в котором упомянутая подложка содержит нитрид алюминия.
10. Модуль излучателя света, содержащий:
кристалл излучателя света;
подложку, содержащую материал с тепловодностью 30 Вт/м·К или выше; и
формованную линзу над упомянутым излучателем на упомянутой подложке.
11. Модуль излучателя по п.10, в котором упомянутая подложка имеет размеры примерно от 3,5×3,5 мм до 5×5 мм.
12. Модуль излучателя света по п.10, в котором упомянутый кристалл излучателя света имеет размер примерно от 0,7×0,7 мм до 3×3 мм.
RU2011146934/28A 2009-04-28 2010-04-27 Модуль светодиода с увеличенными размерами элементов RU2538354C2 (ru)

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US17355009P 2009-04-28 2009-04-28
US61/173,550 2009-04-28
US12/757,891 2010-04-09
US12/757,891 US8866169B2 (en) 2007-10-31 2010-04-09 LED package with increased feature sizes
PCT/US2010/001255 WO2010126592A1 (en) 2009-04-28 2010-04-27 Led package with increased feature sizes

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