RU2007111723A - Способ очистки и функционирования реактора cvd - Google Patents
Способ очистки и функционирования реактора cvd Download PDFInfo
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- RU2007111723A RU2007111723A RU2007111723/02A RU2007111723A RU2007111723A RU 2007111723 A RU2007111723 A RU 2007111723A RU 2007111723/02 A RU2007111723/02 A RU 2007111723/02A RU 2007111723 A RU2007111723 A RU 2007111723A RU 2007111723 A RU2007111723 A RU 2007111723A
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- Prior art keywords
- chamber
- walls
- cleaning
- temperature
- period
- Prior art date
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- 238000000034 method Methods 0.000 title claims 29
- 238000004140 cleaning Methods 0.000 title claims 14
- 239000007789 gas Substances 0.000 claims 11
- 239000000463 material Substances 0.000 claims 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 230000008021 deposition Effects 0.000 claims 4
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 claims 4
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims 4
- 229910003468 tantalcarbide Inorganic materials 0.000 claims 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims 3
- 239000011241 protective layer Substances 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims 2
- 238000005137 deposition process Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 229910052756 noble gas Inorganic materials 0.000 claims 2
- 238000000859 sublimation Methods 0.000 claims 2
- 230000008022 sublimation Effects 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 125000004122 cyclic group Chemical group 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims 1
- 238000010926 purge Methods 0.000 claims 1
- 238000000746 purification Methods 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Claims (22)
1. Способ очистки реакционной камеры реактора CVD с горячей стенкой, причем стенки камеры покрыты защитным слоем карбида кремния, карбида тантала или карбида ниобия, включающий стадии:
нагревания стенок камеры до температуры не ниже чем температура начала возгонки удаляемого материала;
введения газового потока в камеру.
2. Способ очистки по п.1, в котором указанным удаляемым материалом является карбид кремния.
3. Способ очистки по пп.1 и 2, в котором указанным газом является благородный газ, предпочтительно аргон или гелий.
4. Способ очистки реактора CVD с горячей стенкой, причем стенки камеры покрыты защитным слоем карбида кремния, карбида тантала или карбида ниобия, включающий стадии:
нагревания стенок реактора до температуры стенок реакционной камеры не ниже чем температура начала возгонки удаляемого материала; и
приведения в контакт газового потока со стенками очищаемого реактора, причем указанный газ включает по крайней мере один компонент, который является реационноспособным по отношению к указанному удаляемому материалу.
5. Способ очистки по пп.1 и 4, в котором указанный газ включает водород, или хлористый водород, или бромистый водород.
6. Способ очистки по пп.1 и 4, в котором указанный газ включает хлористый водород и благородный газ.
7. Способ очистки по пп.1 и 4, в котором указанный газ включает хлористый водород и водород.
8. Способ очистки по пп.1 и 4, в котором стенки камеры нагревают до температуры выше 1800°С, предпочтительно между 1800°С и 2400°С, наиболее предпочтительно между 1900°С и 2000°С.
9. Способ очистки по пп.1 и 4, включающий:
первый период, когда температуру стенок камеры увеличивают;
второй период, когда температуру стенок камеры поддерживают постоянной;
третий период, когда температуру стенок камеры уменьшают.
10. Способ очистки по п.9, в котором газовый поток в течение второго периода больше, чем газовый поток в течение первого периода предпочтительно в пять - двадцать раз.
11. Способ очистки по п.10, в котором газовый поток в течение третьего периода по существу такой же или больше, чем газовый поток в течение второго периода предпочтительно в один - три раза.
12. Способ функционирования реактора CVD с горячей стенкой для осаждения полупроводникового материала на подложках, причем реактор оборудуют реакционной камерой для осаждения и стенки камеры покрыты защитным слоем карбида кремния, карбида тантала или карбида ниобия, который предусматривает процесс роста, включающий последовательное и циклическое осуществление:
загрузки подложек в камеры;
осаждения полупроводникового материала на подложках;
выгрузки подложек из камеры;
отличающийся тем, что после разгрузки осуществляют процесс очистки камеры по одному или нескольким пп.1-11.
13. Способ функционирования по п.12, в котором после загрузки и перед процессом осаждения осуществляют процесс продувки.
14. Способ функционирования по пп.12-13, в котором очистку камеры выполняют после каждой выгрузки.
15. Способ функционирования по пп.12-13, в котором очистку камеры выполняют после определенного числа выгрузок.
16. Способ функционирования по п.15, в котором указанный диапазон чисел выгрузки составляет от двух до десяти.
17. Способ функционирования по п.14, в котором процесс очистки длится меньше, чем процесс роста.
18. Способ функционирования по п.17, в котором процесс очистки длится между 1/2 и 1/4 длительности процесса роста.
19. Способ функционирования по п.12, в котором во время процесса осаждения осаждают карбид кремния.
20. Способ функционирования по п.19, в котором осаждение карбида кремния осуществляют при температуре между 1500°С и 1700°С, предпочтительно между 1550°С и 1650°С.
21. Способ функционирования по п.12, в котором прежде всего стенки реактора снабжены по крайней мере одним поверхностным слоем карбида тантала или карбида ниобия.
22. Реактор CVD для осаждения полупроводникового материала на подложки, отличающийся тем, что он содержит средства для осуществления способа функционирования по пп.12-20.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT001677A ITMI20041677A1 (it) | 2004-08-30 | 2004-08-30 | Processo di pulitura e processo operativo per un reattore cvd. |
ITMI2004A001677 | 2004-08-30 |
Publications (1)
Publication Number | Publication Date |
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RU2007111723A true RU2007111723A (ru) | 2008-10-10 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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RU2007111723/02A RU2007111723A (ru) | 2004-08-30 | 2005-07-12 | Способ очистки и функционирования реактора cvd |
Country Status (8)
Country | Link |
---|---|
US (1) | US20070264807A1 (ru) |
EP (1) | EP1786949A1 (ru) |
JP (1) | JP2008511753A (ru) |
KR (1) | KR20070061844A (ru) |
CN (1) | CN101023198A (ru) |
IT (1) | ITMI20041677A1 (ru) |
RU (1) | RU2007111723A (ru) |
WO (1) | WO2006024572A1 (ru) |
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JPS5277590A (en) * | 1975-12-24 | 1977-06-30 | Toshiba Corp | Semiconductor producing device |
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DE602004001802T3 (de) * | 2003-04-24 | 2012-01-26 | Norstel Ab | Vorrichtung und Verfahren zur Herstellung von Einkristallen durch Dampfphasenabscheidung |
SE0301225L (sv) * | 2003-04-24 | 2004-07-20 | Okmetic Oyj | Apparat och metod för tillverkning av monokristaller genom gasdeposition |
ITMI20031196A1 (it) * | 2003-06-13 | 2004-12-14 | Lpe Spa | Sistema per crescere cristalli di carburo di silicio |
US7052546B1 (en) * | 2003-08-28 | 2006-05-30 | Cape Simulations, Inc. | High-purity crystal growth |
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- 2005-07-12 JP JP2007528803A patent/JP2008511753A/ja not_active Withdrawn
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US20070264807A1 (en) | 2007-11-15 |
KR20070061844A (ko) | 2007-06-14 |
CN101023198A (zh) | 2007-08-22 |
JP2008511753A (ja) | 2008-04-17 |
ITMI20041677A1 (it) | 2004-11-30 |
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