PT3339352T - Resina, composição, película curada, método para o fabrico de película curada e dispositivo semicondutor - Google Patents
Resina, composição, película curada, método para o fabrico de película curada e dispositivo semicondutorInfo
- Publication number
- PT3339352T PT3339352T PT168788693T PT16878869T PT3339352T PT 3339352 T PT3339352 T PT 3339352T PT 168788693 T PT168788693 T PT 168788693T PT 16878869 T PT16878869 T PT 16878869T PT 3339352 T PT3339352 T PT 3339352T
- Authority
- PT
- Portugal
- Prior art keywords
- cured film
- resin
- composition
- semiconductor device
- producing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/12—Unsaturated polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
- C08F290/08—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated side groups
- C08F290/14—Polymers provided for in subclass C08G
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
- C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1039—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors comprising halogen-containing substituents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
- C08G73/1053—Polyimides containing oxygen in the form of ether bonds in the main chain with oxygen only in the tetracarboxylic moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
- C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/14—Polyamide-imides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/22—Polybenzoxazoles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
- C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2377/00—Characterised by the use of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Derivatives of such polymers
- C08J2377/06—Polyamides derived from polyamines and polycarboxylic acids
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/0652—Bump or bump-like direct electrical connections from substrate to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Materials For Photolithography (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015254880 | 2015-12-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
PT3339352T true PT3339352T (pt) | 2020-11-02 |
Family
ID=59089536
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PT168788693T PT3339352T (pt) | 2015-12-25 | 2016-12-22 | Resina, composição, película curada, método para o fabrico de película curada e dispositivo semicondutor |
Country Status (9)
Country | Link |
---|---|
US (1) | US10450417B2 (pt) |
EP (1) | EP3339352B1 (pt) |
JP (1) | JP6257870B2 (pt) |
KR (1) | KR101913181B1 (pt) |
CN (1) | CN108137803B (pt) |
PH (1) | PH12018550034A1 (pt) |
PT (1) | PT3339352T (pt) |
TW (1) | TWI634135B (pt) |
WO (1) | WO2017110982A1 (pt) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018151527A (ja) * | 2017-03-13 | 2018-09-27 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性樹脂組成物 |
JP7407518B2 (ja) * | 2018-04-27 | 2024-01-04 | 旭化成株式会社 | ネガ型感光性樹脂組成物及びその製造方法 |
CN110591094B (zh) * | 2018-06-13 | 2020-11-20 | 北京大学 | 基于2,5-二烯丙氧基对苯二胺单体的聚苯并噁唑高分子材料及其制备方法 |
WO2020066244A1 (ja) * | 2018-09-26 | 2020-04-02 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、半導体デバイス、および熱塩基発生剤 |
CN112752798A (zh) * | 2018-09-27 | 2021-05-04 | 富士胶片株式会社 | 树脂组合物、固化膜、层叠体、固化膜的制造方法及半导体器件 |
WO2020071437A1 (ja) * | 2018-10-03 | 2020-04-09 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性樹脂組成物、パターン硬化物の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜及び電子部品 |
KR20210068420A (ko) * | 2018-10-03 | 2021-06-09 | 에이치디 마이크로시스템즈 가부시키가이샤 | 감광성 수지 조성물, 패턴 경화막의 제조 방법, 경화막, 층간 절연막, 커버 코트층, 표면 보호막 및 전자 부품 |
TWI838478B (zh) * | 2019-03-05 | 2024-04-11 | 日商住友電木股份有限公司 | 感光性聚醯亞胺組成物 |
WO2021002383A1 (ja) * | 2019-07-01 | 2021-01-07 | 富士フイルム株式会社 | 硬化性樹脂組成物、硬化性樹脂組成物の製造方法、硬化膜、積層体、硬化膜の製造方法、及び、半導体デバイス |
JP7412915B2 (ja) * | 2019-07-30 | 2024-01-15 | 東京応化工業株式会社 | 保護膜形成剤、及び半導体チップの製造方法 |
WO2021029019A1 (ja) * | 2019-08-13 | 2021-02-18 | Hdマイクロシステムズ株式会社 | 感光性樹脂組成物、パターン硬化膜の製造方法、硬化膜、層間絶縁膜、カバーコート層、表面保護膜及び電子部品 |
US11721543B2 (en) * | 2019-10-04 | 2023-08-08 | Fujifilm Electronic Materials U.S.A., Inc. | Planarizing process and composition |
TW202128841A (zh) * | 2019-12-05 | 2021-08-01 | 日商富士軟片股份有限公司 | 硬化性樹脂組成物、硬化膜、積層體、硬化膜的製造方法、半導體器件及樹脂 |
JP7308300B2 (ja) * | 2020-01-30 | 2023-07-13 | 旭化成株式会社 | ネガ型感光性樹脂組成物及び硬化レリーフパターンの製造方法 |
TW202136375A (zh) * | 2020-02-04 | 2021-10-01 | 日商富士軟片股份有限公司 | 樹脂組成物、硬化膜、積層體、硬化膜的製造方法及半導體元件 |
US11333975B2 (en) * | 2020-04-14 | 2022-05-17 | International Business Machines Corporation | Polymer, photosensitive resin composition, patterning method, method of forming cured film, interlayer insulating film, surface protective film, and electronic component |
TW202215154A (zh) * | 2020-06-03 | 2022-04-16 | 日商富士軟片股份有限公司 | 硬化性樹脂組成物、硬化膜、積層體、硬化膜的製造方法及半導體元件 |
KR102564491B1 (ko) * | 2021-05-13 | 2023-08-08 | 피아이첨단소재 주식회사 | 폴리이미드 전구체 조성물 및 이를 이용한 폴리이미드 |
WO2023021688A1 (ja) * | 2021-08-20 | 2023-02-23 | 住友ベークライト株式会社 | 感光性樹脂組成物、電子デバイスの製造方法および電子デバイス |
KR102682046B1 (ko) * | 2021-11-30 | 2024-07-05 | 피아이첨단소재 주식회사 | 폴리이미드 전구체 조성물의 제조방법 및 이를 이용하여 제조된 폴리이미드 전구체 조성물을 포함하는 네거티브형 감광성 폴리이미드 조성물 |
WO2023190061A1 (ja) * | 2022-03-29 | 2023-10-05 | 富士フイルム株式会社 | 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス |
CN115826360B (zh) * | 2022-12-23 | 2023-09-12 | 江苏艾森半导体材料股份有限公司 | 感光性聚酰亚胺组合物、图形的制造方法、固化物和电子部件 |
Family Cites Families (123)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DK125218B (da) | 1967-11-09 | 1973-01-15 | Kalle Ag | Lysfølsomt optegnelsesmateriale og lysfølsom blanding til anvendelse ved fremstilling af materialet. |
GB1248036A (en) | 1968-01-12 | 1971-09-29 | Agfa Gevaert | Photopolymerisation of ethylenically unsaturated organic compounds |
DE2033769B2 (de) | 1969-07-11 | 1980-02-21 | Ppg Industries, Inc., Pittsburgh, Pa. (V.St.A.) | Bis-<2-acryloxyäthyl)hexahydrophthalat enthaltende Gemische und Herstellungsverfahren |
JPS4841708B1 (pt) | 1970-01-13 | 1973-12-07 | ||
JPS506034B1 (pt) | 1970-08-11 | 1975-03-10 | ||
DE2053683A1 (de) | 1970-11-02 | 1972-05-10 | Kalle Ag, 6202 Wiesbaden-Biebrich | Photopolymerisierbare Kopiermasse |
DE2064079C2 (de) | 1970-12-28 | 1982-09-09 | Hoechst Ag, 6000 Frankfurt | Photopolymerisierbares Gemisch |
US3987037A (en) | 1971-09-03 | 1976-10-19 | Minnesota Mining And Manufacturing Company | Chromophore-substituted vinyl-halomethyl-s-triazines |
JPS5324989B2 (pt) | 1971-12-09 | 1978-07-24 | ||
JPS5230490B2 (pt) | 1972-03-21 | 1977-08-09 | ||
US4212976A (en) | 1973-06-15 | 1980-07-15 | Merck & Co., Inc. | 3,4α-Di-O-derivatives of mercaptomethylpyridine and pyridylmethyldisulfide |
DE2361041C3 (de) | 1973-12-07 | 1980-08-14 | Hoechst Ag, 6000 Frankfurt | Photopolymerisierbares Gemisch |
JPS5311314B2 (pt) | 1974-09-25 | 1978-04-20 | ||
DE2718259C2 (de) | 1977-04-25 | 1982-11-25 | Hoechst Ag, 6000 Frankfurt | Strahlungsempfindliches Gemisch |
JPS5474728A (en) | 1977-11-28 | 1979-06-15 | Fuji Photo Film Co Ltd | Photosensitive composition |
DE2822189A1 (de) | 1978-05-20 | 1980-04-17 | Hoechst Ag | Photopolymerisierbares gemisch |
DE2822190A1 (de) | 1978-05-20 | 1979-11-22 | Hoechst Ag | Photopolymerisierbares gemisch |
DE2952697A1 (de) | 1979-12-29 | 1981-07-02 | Hoechst Ag, 6230 Frankfurt | Durch strahlung polymerisierbares gemisch und damit hergestelltes strahlungsempfindliches kopiermaterial |
DE2952698A1 (de) | 1979-12-29 | 1981-07-02 | Hoechst Ag, 6230 Frankfurt | Photopolymerisierbares gemisch und damit hergestelltes photopolymerisierbares kopiermaterial |
DE3036694A1 (de) | 1980-09-29 | 1982-06-03 | Hoechst Ag, 6000 Frankfurt | Gummielastische, ethylenisch ungesaettigte polyurethane und dieselben enthaltendes durch strahlung polymerisierbares gemisch |
DE3048502A1 (de) | 1980-12-22 | 1982-07-22 | Hoechst Ag, 6000 Frankfurt | Durch strahlung polymerisierbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
DE3120052A1 (de) | 1981-05-20 | 1982-12-09 | Hoechst Ag, 6000 Frankfurt | Durch strahlung polymerisierbares gemisch und damit hergestelltes kopiermaterial |
JPS595241A (ja) | 1982-06-21 | 1984-01-12 | ヘキスト・アクチエンゲゼルシヤフト | 放射線重合可能な混合物 |
DE3223104A1 (de) | 1982-06-21 | 1983-12-22 | Hoechst Ag, 6230 Frankfurt | Photopolymerisierbares gemisch und damit hergestelltes photopolymerisierbares kopiermaterial |
DE3337024A1 (de) | 1983-10-12 | 1985-04-25 | Hoechst Ag, 6230 Frankfurt | Lichtempfindliche, trichlormethylgruppen aufweisende verbindungen, verfahren zu ihrer herstellung und diese verbindungen enthaltendes lichtempfindliches gemisch |
DE3421511A1 (de) | 1984-06-08 | 1985-12-12 | Hoechst Ag, 6230 Frankfurt | Polymerisierbare, perfluoralkylgruppen aufweisende verbindungen, sie enthaltende reproduktionsschichten und deren verwendung fuer den wasserlosen offsetdruck |
JPH0766185B2 (ja) | 1985-09-09 | 1995-07-19 | 富士写真フイルム株式会社 | 感光性組成物 |
DE3710279A1 (de) | 1987-03-28 | 1988-10-06 | Hoechst Ag | Polymerisierbare verbindungen und diese enthaltendes durch strahlung polymerisierbares gemisch |
DE3710282A1 (de) | 1987-03-28 | 1988-10-13 | Hoechst Ag | Photopolymerisierbares gemisch und daraus hergestelltes aufzeichnungsmaterial |
DE3710281A1 (de) | 1987-03-28 | 1988-10-06 | Hoechst Ag | Photopolymerisierbares gemisch und daraus hergestelltes aufzeichnungsmaterial |
DE3738864A1 (de) | 1987-11-16 | 1989-05-24 | Hoechst Ag | Polymerisierbare verbindungen und diese enthaltendes durch strahlung polymerisierbares gemisch |
DE3817424A1 (de) | 1988-05-21 | 1989-11-23 | Hoechst Ag | Alkenylphosphon- und -phosphinsaeureester, verfahren zu ihrer herstellung und durch strahlung polymerisierbares gemisch, das diese verbindungen enthaelt |
DE3843205A1 (de) | 1988-12-22 | 1990-06-28 | Hoechst Ag | Photopolymerisierbare verbindungen, diese enthaltendes photopolymerisierbares gemisch und daraus hergestelltes photopolymerisierbares aufzeichnungsmaterial |
JP2706859B2 (ja) | 1991-07-30 | 1998-01-28 | 富士写真フイルム株式会社 | 光硬化性樹脂組成物、保護層の形成方法及びカラーフイルター |
JPH05281728A (ja) | 1992-04-01 | 1993-10-29 | Fuji Photo Film Co Ltd | 光重合性組成物 |
US6117616A (en) * | 1995-04-17 | 2000-09-12 | Nitto Denko Corporation | Circuit-forming substrate and circuit substrate |
US5886136A (en) * | 1995-09-12 | 1999-03-23 | Nippon Zeon Co., Ltd. | Pattern forming process |
JP3321548B2 (ja) * | 1996-06-17 | 2002-09-03 | 株式会社日立製作所 | 感光性ポリイミド前駆体組成物、およびそれを用いたパターン形成方法 |
JPH1062986A (ja) | 1996-08-21 | 1998-03-06 | Fuji Photo Film Co Ltd | 感放射線性着色組成物 |
TW452575B (en) | 1996-12-06 | 2001-09-01 | Ciba Sc Holding Ag | New Α-aminoacetophenone photoinitiators and photopolymerizable compositions comprising these photoinitiators |
JPH1135683A (ja) * | 1997-07-15 | 1999-02-09 | Unitika Ltd | 全芳香族ポリイミド前駆体粉体及びその製造方法 |
JPH11209614A (ja) * | 1998-01-30 | 1999-08-03 | Hitachi Chem Co Ltd | 感光性ポリイミド前駆体組成物及びそれを用いたパターン製造方法 |
SG77689A1 (en) | 1998-06-26 | 2001-01-16 | Ciba Sc Holding Ag | New o-acyloxime photoinitiators |
DK199901098A (da) | 1998-08-18 | 2000-02-19 | Ciba Sc Holding Ag | Sylfonyloximer til i-linie-fotoresists med høj følsomhed og høj resisttykkelse |
WO2000043439A1 (fr) * | 1999-01-21 | 2000-07-27 | Asahi Kasei Kabushiki Kaisha | Ester d'acide polyamique |
JP4419219B2 (ja) | 1999-08-11 | 2010-02-24 | 東レ株式会社 | 耐熱性樹脂組成物 |
NL1016815C2 (nl) | 1999-12-15 | 2002-05-14 | Ciba Sc Holding Ag | Oximester-fotoinitiatoren. |
JP4627926B2 (ja) | 2001-06-11 | 2011-02-09 | アグリテクノ矢崎株式会社 | 作業機用マーカ |
KR100801457B1 (ko) | 2001-06-11 | 2008-02-11 | 시바 스페셜티 케미칼스 홀딩 인크. | 결합된 구조를 가지는 옥심 에스테르 광개시제 |
CA2454914A1 (en) | 2001-08-21 | 2003-03-06 | Ciba Specialty Chemicals Holding Inc. | Bathochromic mono- and bis-acylphosphine oxides and sulfides and their use as photoinitiators |
JP4240908B2 (ja) | 2002-05-14 | 2009-03-18 | 日立化成デュポンマイクロシステムズ株式会社 | 耐熱感光性樹脂組成物、パターン製造法及び半導体デバイス |
JP2004026889A (ja) * | 2002-06-21 | 2004-01-29 | Mitsui Chemicals Inc | プロトン酸基含有架橋性樹脂、その架橋物およびそれを用いた燃料電池 |
JP2004085637A (ja) * | 2002-08-23 | 2004-03-18 | Kyocera Chemical Corp | 感光性樹脂組成物およびその製造方法 |
JP4337481B2 (ja) * | 2002-09-17 | 2009-09-30 | 東レ株式会社 | ネガ型感光性樹脂前駆体組成物およびそれを用いた電子部品ならびに表示装置 |
KR100524069B1 (ko) | 2003-04-04 | 2005-10-26 | 삼성전자주식회사 | 홈 에이전트 관리장치 및 관리방법 |
JP2005003767A (ja) * | 2003-06-10 | 2005-01-06 | Sumitomo Bakelite Co Ltd | 不純物の低減方法 |
JPWO2005101125A1 (ja) | 2004-03-31 | 2008-03-06 | 日立化成デュポンマイクロシステムズ株式会社 | 耐熱感光性樹脂組成物、該組成物を用いたパターン製造方法、及び電子部品 |
JP2006189591A (ja) | 2005-01-05 | 2006-07-20 | Tokyo Institute Of Technology | 感光性樹脂組成物、レリーフパターンの製造方法及び半導体装置 |
EP1923742A4 (en) | 2005-09-05 | 2010-10-06 | Asahi Kasei E Materials Corp | POSITIVE PHOTOSENSITIVE RESIN COMPOSITION |
EP1957457B1 (en) | 2005-12-01 | 2013-02-27 | Basf Se | Oxime ester photoinitiators |
KR100814231B1 (ko) | 2005-12-01 | 2008-03-17 | 주식회사 엘지화학 | 옥심 에스테르를 포함하는 트리아진계 광활성 화합물을포함하는 투명한 감광성 조성물 |
KR100655045B1 (ko) | 2005-12-30 | 2006-12-06 | 제일모직주식회사 | 감광성 수지 조성물 및 이를 이용한 블랙 매트릭스 |
JP5312743B2 (ja) | 2006-02-01 | 2013-10-09 | 富士フイルム株式会社 | オキシム化合物及びそれを含む感光性組成物 |
JP5354863B2 (ja) | 2006-02-24 | 2013-11-27 | 富士フイルム株式会社 | オキシム誘導体、光重合性組成物、カラーフィルタおよびその製造方法 |
JP4756350B2 (ja) | 2006-03-17 | 2011-08-24 | 大日本印刷株式会社 | 感光性樹脂組成物、物品、及びネガ型パターン形成方法 |
JP4930883B2 (ja) | 2006-05-22 | 2012-05-16 | 公立大学法人大阪府立大学 | 感光性樹脂組成物及びそれを用いた回路基板 |
JP2007322744A (ja) | 2006-05-31 | 2007-12-13 | Fujifilm Corp | 着色感光性樹脂組成物、及び感光性樹脂転写材料、並びに、カラーフィルタ、カラーフィルタの製造方法、及び液晶表示装置 |
JP2008038083A (ja) * | 2006-08-09 | 2008-02-21 | Toyobo Co Ltd | ポリイミドフィルム |
JP2008063554A (ja) | 2006-08-11 | 2008-03-21 | Fujifilm Corp | 分解性樹脂組成物、パターン形成材料およびパターン形成方法 |
US8197994B2 (en) | 2006-09-27 | 2012-06-12 | Fujifilm Corporation | Compound or its tautomer, metal complex compound, colored photosensitive curing composition, color filter, and production |
US8269358B2 (en) | 2006-10-24 | 2012-09-18 | Sumitomo Bakelite Company Limited | Bis(aminophenol) derivative, process for producing same, polyamide resin, positive photosensitive resin composition, protective film, interlayer dielectric film, semiconductor device, and display element |
US20090292039A1 (en) | 2006-12-27 | 2009-11-26 | Adeka Corporation | Oxime ester compound and photopolymerization initiator containing the same |
JP2008224970A (ja) * | 2007-03-12 | 2008-09-25 | Fujifilm Corp | 感光性樹脂組成物、それを用いた硬化レリーフパターンの製造方法及び半導体装置 |
JP2008222858A (ja) * | 2007-03-13 | 2008-09-25 | Jsr Corp | ポリイミドの精製方法およびポリイミド含有組成物 |
JP5386789B2 (ja) | 2007-03-29 | 2014-01-15 | 大日本印刷株式会社 | 光塩基発生剤、感光性樹脂組成物、及びネガ型パターン形成方法 |
JP5496482B2 (ja) | 2007-08-27 | 2014-05-21 | 富士フイルム株式会社 | 新規化合物、光重合性組成物、カラーフィルタ用光重合性組成物、カラーフィルタ、及びその製造方法、固体撮像素子、並びに、平版印刷版原版 |
JP5071803B2 (ja) | 2007-09-03 | 2012-11-14 | 学校法人東京理科大学 | 感光性樹脂組成物 |
JP2009191179A (ja) | 2008-02-15 | 2009-08-27 | Toyo Ink Mfg Co Ltd | 光重合開始剤、重合性組成物、および重合物の製造方法。 |
JP2009221114A (ja) | 2008-03-13 | 2009-10-01 | Fujifilm Corp | 重合開始機能を有する化合物、重合開始剤、重合性組成物、カラーフィルタ及びその製造方法、ならびに固体撮像素子 |
JP5507054B2 (ja) | 2008-03-28 | 2014-05-28 | 富士フイルム株式会社 | 重合性組成物、カラーフィルタ、カラーフィルタの製造方法、及び固体撮像素子 |
CN101981154B (zh) | 2008-03-31 | 2014-03-19 | 大日本印刷株式会社 | 碱产生剂、感光性树脂组合物、包含该感光性树脂组合物的图案形成用材料、使用了该感光性树脂组合物的图案形成方法以及物品 |
JP5494479B2 (ja) | 2008-04-25 | 2014-05-14 | 三菱化学株式会社 | ケトオキシムエステル系化合物及びその利用 |
JP4911116B2 (ja) | 2008-05-22 | 2012-04-04 | 日立化成デュポンマイクロシステムズ株式会社 | 半導体装置及びその製造方法、感光性樹脂組成物並びに電子部品 |
JP5538688B2 (ja) | 2008-05-30 | 2014-07-02 | 富士フイルム株式会社 | 着色硬化性組成物、カラーフィルタ、その製造方法、及び、固体撮像素子 |
JP5171506B2 (ja) | 2008-06-30 | 2013-03-27 | 富士フイルム株式会社 | 新規化合物、重合性組成物、カラーフィルタ、及びその製造方法、固体撮像素子、並びに、平版印刷版原版 |
JP2010015025A (ja) | 2008-07-04 | 2010-01-21 | Adeka Corp | 特定の光重合開始剤を含有する感光性組成物 |
JP5293120B2 (ja) | 2008-11-28 | 2013-09-18 | 住友化学株式会社 | 有機エレクトロルミネッセンス素子およびその製造方法 |
CN102232065B (zh) | 2008-12-02 | 2014-11-05 | 和光纯药工业株式会社 | 光产碱剂 |
JP5618118B2 (ja) | 2009-01-09 | 2014-11-05 | 日立化成株式会社 | 感光性樹脂組成物,並びにこれを用いた感光性エレメント,ソルダーレジスト及びプリント配線板 |
JP5669386B2 (ja) | 2009-01-15 | 2015-02-12 | 富士フイルム株式会社 | 新規化合物、重合性組成物、カラーフィルタ、及びその製造方法、固体撮像素子、並びに、平版印刷版原版 |
JP5747437B2 (ja) * | 2009-04-14 | 2015-07-15 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性樹脂組成物及びこれを用いた回路形成用基板 |
JP2015127817A (ja) | 2009-04-14 | 2015-07-09 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性樹脂組成物及びこれを用いた回路形成用基板 |
JP2010262028A (ja) | 2009-04-30 | 2010-11-18 | Nippon Steel Chem Co Ltd | ブラックマトリックス用感光性樹脂組成物 |
JP5571990B2 (ja) | 2009-06-04 | 2014-08-13 | 旭化成イーマテリアルズ株式会社 | ネガ型感光性樹脂組成物、硬化レリーフパターン形成・製造方法、並びに半導体装置 |
JP2011079889A (ja) * | 2009-10-05 | 2011-04-21 | Sumitomo Bakelite Co Ltd | 樹脂組成物、光学部品および光学デバイス |
JP5251829B2 (ja) | 2009-10-26 | 2013-07-31 | 東レ株式会社 | ポリエステル樹脂組成物、その製造方法、およびフィルム |
JP5577688B2 (ja) | 2009-12-17 | 2014-08-27 | 日立化成デュポンマイクロシステムズ株式会社 | ポジ型感光性樹脂組成物、それを用いた硬化膜及び電子部品 |
US8883391B2 (en) | 2009-12-28 | 2014-11-11 | Toray Industries, Inc. | Positive type photosensitive resin composition |
JP5577728B2 (ja) | 2010-02-12 | 2014-08-27 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性樹脂組成物及びこれを用いた回路形成用基板 |
JP5105113B2 (ja) * | 2010-03-05 | 2012-12-19 | Jsr株式会社 | 液晶表示素子の製造方法 |
TWI430024B (zh) | 2010-08-05 | 2014-03-11 | Asahi Kasei E Materials Corp | A photosensitive resin composition, a method for manufacturing a hardened bump pattern, and a semiconductor device |
JP6151475B2 (ja) | 2010-09-30 | 2017-06-21 | 大日本印刷株式会社 | 感光性樹脂組成物、パターン形成用材料及びパターン形成方法 |
WO2012045736A1 (en) | 2010-10-05 | 2012-04-12 | Basf Se | Oxime ester derivatives of benzocarbazole compounds and their use as photoinitiators in photopolymerizable compositions |
JP2013015701A (ja) | 2011-07-05 | 2013-01-24 | Hitachi Chemical Dupont Microsystems Ltd | 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品 |
US8487068B2 (en) * | 2011-08-31 | 2013-07-16 | Toho Chemical Industry Co., Ltd. | Method of manufacturing polybenzoxazole precursor |
JP5831092B2 (ja) | 2011-09-27 | 2015-12-09 | 東レ株式会社 | ポジ型感光性樹脂組成物 |
JP5910109B2 (ja) | 2012-01-26 | 2016-04-27 | 住友ベークライト株式会社 | ポジ型感光性樹脂組成物、硬化膜、保護膜、絶縁膜、半導体装置、および表示体装置 |
JP5772642B2 (ja) | 2012-02-09 | 2015-09-02 | Jsr株式会社 | 硬化性樹脂組成物、表示素子用硬化膜、表示素子用硬化膜の形成方法及び表示素子 |
JP5953795B2 (ja) | 2012-02-15 | 2016-07-20 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性樹脂組成物、パターン硬化膜の製造方法及び電子部品 |
JP2013194205A (ja) | 2012-03-22 | 2013-09-30 | Dainippon Printing Co Ltd | 塩基発生剤、感光性樹脂組成物、当該感光性樹脂組成物からなるパターン形成用材料、当該感光性樹脂組成物を用いたレリーフパターンの製造方法、及び物品 |
JP5910245B2 (ja) | 2012-03-29 | 2016-04-27 | 大日本印刷株式会社 | 塩基発生剤、感光性樹脂組成物、当該感光性樹脂組成物からなるパターン形成用材料、当該感光性樹脂組成物を用いたレリーフパターンの製造方法、及び物品 |
JP6190805B2 (ja) | 2012-05-07 | 2017-08-30 | 旭化成株式会社 | ネガ型感光性樹脂組成物、硬化レリーフパターンの製造方法、及び半導体装置 |
JP2014041264A (ja) | 2012-08-22 | 2014-03-06 | Sumitomo Bakelite Co Ltd | 感光性樹脂組成物、硬化膜、保護膜、絶縁膜、およびそれを用いた半導体装置、表示体装置 |
JP2014088460A (ja) * | 2012-10-29 | 2014-05-15 | Toray Ind Inc | 可溶性ポリイミド組成物およびその製造方法、それを用いたポジ型感光性樹脂組成物ならびにそれを用いた電子部品 |
CN104854508B (zh) * | 2012-12-20 | 2019-05-07 | 东丽株式会社 | 感光性树脂组合物、耐热性树脂膜的制造方法及显示装置 |
JP6245180B2 (ja) | 2012-12-21 | 2017-12-13 | 日立化成デュポンマイクロシステムズ株式会社 | ポリイミド前駆体樹脂組成物 |
JP6048257B2 (ja) | 2013-03-25 | 2016-12-21 | 東レ株式会社 | 耐熱性樹脂及びその前駆体組成物 |
JP6225445B2 (ja) | 2013-03-26 | 2017-11-08 | 東レ株式会社 | ドライエッチング用フォトレジスト、それを用いたレリーフパターンおよび発光素子の製造方法 |
JP2014191252A (ja) | 2013-03-28 | 2014-10-06 | Sumitomo Bakelite Co Ltd | 感光性樹脂組成物、硬化膜、保護膜、半導体装置および表示体装置 |
JP2015028106A (ja) | 2013-07-30 | 2015-02-12 | 三井化学株式会社 | ポリイミド前駆体ワニス、ポリイミド樹脂、およびそれらの用途 |
JP6167018B2 (ja) | 2013-10-31 | 2017-07-19 | 富士フイルム株式会社 | 積層体、有機半導体製造用キットおよび有機半導体製造用レジスト組成物 |
KR102301297B1 (ko) | 2014-02-19 | 2021-09-10 | 에이치디 마이크로시스템즈 가부시키가이샤 | 수지 조성물, 그에 따라 형성되는 경화막 및 패턴 경화막, 및 그들의 제조 방법 |
JP6166682B2 (ja) | 2014-03-26 | 2017-07-19 | 富士フイルム株式会社 | 着色組成物、硬化膜、カラーフィルタ、パターン形成方法、カラーフィルタの製造方法、固体撮像素子、および、画像表示装置 |
-
2016
- 2016-12-19 TW TW105141976A patent/TWI634135B/zh active
- 2016-12-22 JP JP2017550954A patent/JP6257870B2/ja active Active
- 2016-12-22 KR KR1020187006257A patent/KR101913181B1/ko active IP Right Grant
- 2016-12-22 EP EP16878869.3A patent/EP3339352B1/en active Active
- 2016-12-22 PT PT168788693T patent/PT3339352T/pt unknown
- 2016-12-22 CN CN201680056589.4A patent/CN108137803B/zh active Active
- 2016-12-22 WO PCT/JP2016/088305 patent/WO2017110982A1/ja active Application Filing
-
2018
- 2018-03-27 PH PH12018550034A patent/PH12018550034A1/en unknown
- 2018-03-28 US US15/938,528 patent/US10450417B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN108137803A (zh) | 2018-06-08 |
EP3339352B1 (en) | 2020-09-16 |
TW201736435A (zh) | 2017-10-16 |
US10450417B2 (en) | 2019-10-22 |
PH12018550034B1 (en) | 2018-09-24 |
JP6257870B2 (ja) | 2018-01-10 |
TWI634135B (zh) | 2018-09-01 |
KR101913181B1 (ko) | 2018-10-30 |
EP3339352A1 (en) | 2018-06-27 |
JPWO2017110982A1 (ja) | 2017-12-28 |
PH12018550034A1 (en) | 2018-09-24 |
CN108137803B (zh) | 2020-04-17 |
KR20180030921A (ko) | 2018-03-26 |
EP3339352A4 (en) | 2018-11-21 |
US20180215874A1 (en) | 2018-08-02 |
WO2017110982A1 (ja) | 2017-06-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
PT3339352T (pt) | Resina, composição, película curada, método para o fabrico de película curada e dispositivo semicondutor | |
SG11201706733UA (en) | Photosensitive resin composition, method for manufacturing cured resin film, and semiconductor device | |
PT3492982T (pt) | Composição de resina fotossensível, película curada, laminado, método para produzir película curada, método para produzir laminado, e dispositivo semicondutor | |
EP3162868A4 (en) | Thermal base generator, thermosetting resin composition, cured film, cured film manufacturing method, and semiconductor device | |
EP3203320A4 (en) | Photosensitive resin composition, cured film, element provided with cured film, and method for manufacturing semiconductor device | |
EP3360928A4 (en) | ADDITION-CURABLE SILICONE RESIN COMPOSITION, PROCESS FOR PRODUCING THE SAME, AND OPTICAL SEMICONDUCTOR DEVICE | |
PT3553129T (pt) | Composição de resina curável, produto curado obtido a partir dela, método de cura da mesma e dispositivo semicondutor | |
EP3153535A4 (en) | Polyurethane-modified epoxy resin, method for producing same, epoxy resin composition and cured product | |
EP2927210A4 (en) | SOFT MAKER, RESIN COMPOSITION AND METHOD FOR THE PRODUCTION OF SOFT MAKERS AND RESIN COMPOSITION | |
EP3098249A4 (en) | Resin composition, resin film, and semiconductor device and method for manufacturing same | |
EP3015487A4 (en) | Resin composition, resin sheet, cured resin sheet, resin sheet structure, cured resin sheet structure, method for producing cured resin sheet structure, semiconductor device, and led device | |
EP3121210A4 (en) | Resin composition, resin sheet, resin sheet cured product, resin sheet laminate, resin sheet laminate cured product and method for producing same, semiconductor device, and led device. | |
IL259346B (en) | A layer preparation for a semiconductor, a method for producing a layer preparation for a semiconductor, a method for producing a semiconductor element, a method for producing a processing material for a semiconductor, and a semiconductor device | |
EP3061773A4 (en) | Method and device for manufacturing cured light-curing resin composition | |
SG11201708729TA (en) | Resin composition, method for manufacturing semiconductor element using same, and semiconductor device | |
EP3229266A4 (en) | Resin molding device and resin molding method | |
EP2957599A4 (en) | HARDENABLE RESIN COMPOSITION, HARDENED PRODUCT, SEALING ELEMENT AND SEMICONDUCTOR ELEMENT | |
PT3702390T (pt) | Composição para resina curada, produto curado da referida composição, método de produção para a referida composição e o referido produto curado, e dispositivo semicondutor | |
SG11201803938RA (en) | Polymetalloxane, method for producing same, composition thereof, cured film and method for producing same, and members and electronic components provided with same | |
SG11201708565RA (en) | Electronic-device-protecting film, electronic-device-protecting member, method for manufacturing electronic device, and method for manufacturing package | |
EP3453740A4 (en) | FLUORESCENT RESIN COMPOSITION, FORM OBJECT, MEDICAL DEVICE AND METHOD FOR PRODUCING THE FLUORESCENT RESIN COMPOSITION | |
IL249779A0 (en) | A sacrificial film preparation, a method for its preparation, a semiconductor device with cavities created using this preparation, and a method for preparing a semiconductor device using this preparation | |
HUE052360T2 (hu) | Tömítõ gyantaösszetétel és félvezetõ eszköz | |
EP3118237A4 (en) | Method for curing resin composition | |
SG11201703288UA (en) | Resin composition, semiconductor device manufacturing method and semiconductor device |