NO20041523L - Lysemitterende halvlederelement - Google Patents

Lysemitterende halvlederelement

Info

Publication number
NO20041523L
NO20041523L NO20041523A NO20041523A NO20041523L NO 20041523 L NO20041523 L NO 20041523L NO 20041523 A NO20041523 A NO 20041523A NO 20041523 A NO20041523 A NO 20041523A NO 20041523 L NO20041523 L NO 20041523L
Authority
NO
Norway
Prior art keywords
light emitting
semiconductor element
emitting semiconductor
light
semiconductor
Prior art date
Application number
NO20041523A
Other languages
English (en)
Inventor
Shinsuke Fujiwara
Takao Nakamura
Hiroki Mori
Koji Katayama
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003328088A external-priority patent/JP3900128B2/ja
Priority claimed from JP2003390261A external-priority patent/JP2005150656A/ja
Priority claimed from JP2003401557A external-priority patent/JP2005166802A/ja
Priority claimed from JP2003401560A external-priority patent/JP2005166803A/ja
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of NO20041523L publication Critical patent/NO20041523L/no

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/28Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B60VEHICLES IN GENERAL
    • B60QARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL
    • B60Q1/00Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
    • B60Q1/26Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic
    • B60Q1/32Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating vehicle sides, e.g. clearance lights
    • B60Q1/326Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating vehicle sides, e.g. clearance lights on or for wheels
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B60VEHICLES IN GENERAL
    • B60QARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL
    • B60Q1/00Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
    • B60Q1/02Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments
    • B60Q1/24Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments for lighting other areas than only the way ahead
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B60VEHICLES IN GENERAL
    • B60QARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL
    • B60Q2900/00Features of lamps not covered by other groups in B60Q
    • B60Q2900/30Lamps commanded by wireless transmissions
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B60VEHICLES IN GENERAL
    • B60YINDEXING SCHEME RELATING TO ASPECTS CROSS-CUTTING VEHICLE TECHNOLOGY
    • B60Y2200/00Type of vehicle
    • B60Y2200/10Road Vehicles
    • B60Y2200/11Passenger cars; Automobiles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
NO20041523A 2003-09-19 2004-04-06 Lysemitterende halvlederelement NO20041523L (no)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003328088A JP3900128B2 (ja) 2003-09-19 2003-09-19 ZnSe系発光素子
JP2003390261A JP2005150656A (ja) 2003-11-20 2003-11-20 半導体発光素子
JP2003401557A JP2005166802A (ja) 2003-12-01 2003-12-01 半導体発光素子
JP2003401560A JP2005166803A (ja) 2003-12-01 2003-12-01 ZnSe系発光素子

Publications (1)

Publication Number Publication Date
NO20041523L true NO20041523L (no) 2005-03-21

Family

ID=34199158

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20041523A NO20041523L (no) 2003-09-19 2004-04-06 Lysemitterende halvlederelement

Country Status (6)

Country Link
US (1) US20050062054A1 (no)
EP (1) EP1517379A3 (no)
KR (1) KR20050029103A (no)
CN (1) CN100342557C (no)
NO (1) NO20041523L (no)
TW (1) TWI232599B (no)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100561840B1 (ko) * 2003-07-09 2006-03-16 삼성전자주식회사 전극층, 이를 구비하는 발광소자 및 전극층 제조방법
EP2427921A1 (en) 2009-05-05 2012-03-14 3M Innovative Properties Company Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms
JP2012526394A (ja) 2009-05-05 2012-10-25 スリーエム イノベイティブ プロパティズ カンパニー Ledとともに使用するための再発光半導体キャリア素子及び製造方法
EP2449609A1 (en) * 2009-06-30 2012-05-09 3M Innovative Properties Company Cadmium-free re-emitting semiconductor construction
CN102473816B (zh) 2009-06-30 2015-03-11 3M创新有限公司 基于电流拥挤调节颜色的电致发光装置
WO2011002686A1 (en) 2009-06-30 2011-01-06 3M Innovative Properties Company White light electroluminescent devices with adjustable color temperature
CN104600565B (zh) * 2015-01-22 2017-08-25 中国科学院半导体研究所 一种具有低电子泄漏的砷化镓激光器及其制作方法
JP2017085035A (ja) 2015-10-30 2017-05-18 国立研究開発法人理化学研究所 紫外発光ダイオードおよびそれを備える電気機器

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0391270A (ja) * 1989-09-01 1991-04-16 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体発光素子
US5299217A (en) * 1990-10-11 1994-03-29 Hitachi, Ltd. Semiconductor light-emitting device with cadmium zinc selenide layer
DE69224054T2 (de) * 1992-02-19 1998-08-20 Sony Corp Halbleiterlaser
US5362974A (en) * 1992-06-10 1994-11-08 The Furukawa Electric Co., Ltd. Group II-VI material semiconductor optical device with strained multiquantum barriers
JPH0773140B2 (ja) * 1993-02-09 1995-08-02 日本電気株式会社 半導体レーザ
KR950010253A (ko) * 1993-09-07 1995-04-26 오가 노리오 반도체발광장치
JP2692563B2 (ja) * 1993-12-28 1997-12-17 日本電気株式会社 半導体レーザ埋め込み構造
JPH07231142A (ja) * 1994-02-18 1995-08-29 Mitsubishi Electric Corp 半導体発光素子
JPH07321409A (ja) * 1994-05-24 1995-12-08 Matsushita Electric Ind Co Ltd 半導体レーザー素子
GB2298735A (en) * 1995-03-08 1996-09-11 Sharp Kk Semiconductor device having a miniband
DE19542241C2 (de) * 1995-11-13 2003-01-09 Siemens Ag Optoelektronisches Bauelement in II-VI-Halbleitermaterial
JPH09293937A (ja) * 1996-02-29 1997-11-11 Sony Corp 半導体発光素子
EP1098300B1 (en) * 1997-01-17 2003-08-13 Matsushita Electric Industrial Co., Ltd. Optical pickup and optical disk apparatus using the same
DE19703615A1 (de) * 1997-01-31 1998-08-06 Siemens Ag Optoelektronisches Halbleiterbauelement
US6555403B1 (en) * 1997-07-30 2003-04-29 Fujitsu Limited Semiconductor laser, semiconductor light emitting device, and methods of manufacturing the same
JPH11150334A (ja) * 1997-11-14 1999-06-02 Sony Corp 半導体発光素子
JP3533995B2 (ja) * 1999-07-01 2004-06-07 住友電気工業株式会社 発光ダイオードおよびその製造方法
US6870178B2 (en) * 2001-02-28 2005-03-22 Levon V. Asryan Semiconductor laser with reduced temperature sensitivity
JP4277246B2 (ja) * 2001-07-25 2009-06-10 信越半導体株式会社 発光素子
TW550839B (en) * 2001-07-25 2003-09-01 Shinetsu Handotai Kk Light emitting element and method for manufacturing thereof
JP4016245B2 (ja) * 2001-10-03 2007-12-05 信越半導体株式会社 発光素子及びその製造方法

Also Published As

Publication number Publication date
KR20050029103A (ko) 2005-03-24
EP1517379A3 (en) 2011-07-06
CN100342557C (zh) 2007-10-10
TW200512955A (en) 2005-04-01
EP1517379A2 (en) 2005-03-23
CN1599086A (zh) 2005-03-23
TWI232599B (en) 2005-05-11
US20050062054A1 (en) 2005-03-24

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Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application