NO20041523L - Lysemitterende halvlederelement - Google Patents
Lysemitterende halvlederelementInfo
- Publication number
- NO20041523L NO20041523L NO20041523A NO20041523A NO20041523L NO 20041523 L NO20041523 L NO 20041523L NO 20041523 A NO20041523 A NO 20041523A NO 20041523 A NO20041523 A NO 20041523A NO 20041523 L NO20041523 L NO 20041523L
- Authority
- NO
- Norway
- Prior art keywords
- light emitting
- semiconductor element
- emitting semiconductor
- light
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60Q—ARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL
- B60Q1/00—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
- B60Q1/26—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic
- B60Q1/32—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating vehicle sides, e.g. clearance lights
- B60Q1/326—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating vehicle sides, e.g. clearance lights on or for wheels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60Q—ARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL
- B60Q1/00—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
- B60Q1/02—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments
- B60Q1/24—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments for lighting other areas than only the way ahead
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60Q—ARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL
- B60Q2900/00—Features of lamps not covered by other groups in B60Q
- B60Q2900/30—Lamps commanded by wireless transmissions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60Y—INDEXING SCHEME RELATING TO ASPECTS CROSS-CUTTING VEHICLE TECHNOLOGY
- B60Y2200/00—Type of vehicle
- B60Y2200/10—Road Vehicles
- B60Y2200/11—Passenger cars; Automobiles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003328088A JP3900128B2 (ja) | 2003-09-19 | 2003-09-19 | ZnSe系発光素子 |
JP2003390261A JP2005150656A (ja) | 2003-11-20 | 2003-11-20 | 半導体発光素子 |
JP2003401557A JP2005166802A (ja) | 2003-12-01 | 2003-12-01 | 半導体発光素子 |
JP2003401560A JP2005166803A (ja) | 2003-12-01 | 2003-12-01 | ZnSe系発光素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
NO20041523L true NO20041523L (no) | 2005-03-21 |
Family
ID=34199158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20041523A NO20041523L (no) | 2003-09-19 | 2004-04-06 | Lysemitterende halvlederelement |
Country Status (6)
Country | Link |
---|---|
US (1) | US20050062054A1 (no) |
EP (1) | EP1517379A3 (no) |
KR (1) | KR20050029103A (no) |
CN (1) | CN100342557C (no) |
NO (1) | NO20041523L (no) |
TW (1) | TWI232599B (no) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100561840B1 (ko) * | 2003-07-09 | 2006-03-16 | 삼성전자주식회사 | 전극층, 이를 구비하는 발광소자 및 전극층 제조방법 |
EP2427921A1 (en) | 2009-05-05 | 2012-03-14 | 3M Innovative Properties Company | Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms |
JP2012526394A (ja) | 2009-05-05 | 2012-10-25 | スリーエム イノベイティブ プロパティズ カンパニー | Ledとともに使用するための再発光半導体キャリア素子及び製造方法 |
EP2449609A1 (en) * | 2009-06-30 | 2012-05-09 | 3M Innovative Properties Company | Cadmium-free re-emitting semiconductor construction |
CN102473816B (zh) | 2009-06-30 | 2015-03-11 | 3M创新有限公司 | 基于电流拥挤调节颜色的电致发光装置 |
WO2011002686A1 (en) | 2009-06-30 | 2011-01-06 | 3M Innovative Properties Company | White light electroluminescent devices with adjustable color temperature |
CN104600565B (zh) * | 2015-01-22 | 2017-08-25 | 中国科学院半导体研究所 | 一种具有低电子泄漏的砷化镓激光器及其制作方法 |
JP2017085035A (ja) | 2015-10-30 | 2017-05-18 | 国立研究開発法人理化学研究所 | 紫外発光ダイオードおよびそれを備える電気機器 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0391270A (ja) * | 1989-09-01 | 1991-04-16 | Kokusai Denshin Denwa Co Ltd <Kdd> | 半導体発光素子 |
US5299217A (en) * | 1990-10-11 | 1994-03-29 | Hitachi, Ltd. | Semiconductor light-emitting device with cadmium zinc selenide layer |
DE69224054T2 (de) * | 1992-02-19 | 1998-08-20 | Sony Corp | Halbleiterlaser |
US5362974A (en) * | 1992-06-10 | 1994-11-08 | The Furukawa Electric Co., Ltd. | Group II-VI material semiconductor optical device with strained multiquantum barriers |
JPH0773140B2 (ja) * | 1993-02-09 | 1995-08-02 | 日本電気株式会社 | 半導体レーザ |
KR950010253A (ko) * | 1993-09-07 | 1995-04-26 | 오가 노리오 | 반도체발광장치 |
JP2692563B2 (ja) * | 1993-12-28 | 1997-12-17 | 日本電気株式会社 | 半導体レーザ埋め込み構造 |
JPH07231142A (ja) * | 1994-02-18 | 1995-08-29 | Mitsubishi Electric Corp | 半導体発光素子 |
JPH07321409A (ja) * | 1994-05-24 | 1995-12-08 | Matsushita Electric Ind Co Ltd | 半導体レーザー素子 |
GB2298735A (en) * | 1995-03-08 | 1996-09-11 | Sharp Kk | Semiconductor device having a miniband |
DE19542241C2 (de) * | 1995-11-13 | 2003-01-09 | Siemens Ag | Optoelektronisches Bauelement in II-VI-Halbleitermaterial |
JPH09293937A (ja) * | 1996-02-29 | 1997-11-11 | Sony Corp | 半導体発光素子 |
EP1098300B1 (en) * | 1997-01-17 | 2003-08-13 | Matsushita Electric Industrial Co., Ltd. | Optical pickup and optical disk apparatus using the same |
DE19703615A1 (de) * | 1997-01-31 | 1998-08-06 | Siemens Ag | Optoelektronisches Halbleiterbauelement |
US6555403B1 (en) * | 1997-07-30 | 2003-04-29 | Fujitsu Limited | Semiconductor laser, semiconductor light emitting device, and methods of manufacturing the same |
JPH11150334A (ja) * | 1997-11-14 | 1999-06-02 | Sony Corp | 半導体発光素子 |
JP3533995B2 (ja) * | 1999-07-01 | 2004-06-07 | 住友電気工業株式会社 | 発光ダイオードおよびその製造方法 |
US6870178B2 (en) * | 2001-02-28 | 2005-03-22 | Levon V. Asryan | Semiconductor laser with reduced temperature sensitivity |
JP4277246B2 (ja) * | 2001-07-25 | 2009-06-10 | 信越半導体株式会社 | 発光素子 |
TW550839B (en) * | 2001-07-25 | 2003-09-01 | Shinetsu Handotai Kk | Light emitting element and method for manufacturing thereof |
JP4016245B2 (ja) * | 2001-10-03 | 2007-12-05 | 信越半導体株式会社 | 発光素子及びその製造方法 |
-
2004
- 2004-04-06 NO NO20041523A patent/NO20041523L/no not_active Application Discontinuation
- 2004-04-07 EP EP04008437A patent/EP1517379A3/en not_active Withdrawn
- 2004-04-07 KR KR1020040023635A patent/KR20050029103A/ko not_active Application Discontinuation
- 2004-04-09 TW TW093110013A patent/TWI232599B/zh not_active IP Right Cessation
- 2004-04-09 CN CNB2004100325705A patent/CN100342557C/zh not_active Expired - Fee Related
- 2004-04-20 US US10/829,306 patent/US20050062054A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20050029103A (ko) | 2005-03-24 |
EP1517379A3 (en) | 2011-07-06 |
CN100342557C (zh) | 2007-10-10 |
TW200512955A (en) | 2005-04-01 |
EP1517379A2 (en) | 2005-03-23 |
CN1599086A (zh) | 2005-03-23 |
TWI232599B (en) | 2005-05-11 |
US20050062054A1 (en) | 2005-03-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FC2A | Withdrawal, rejection or dismissal of laid open patent application |