DE60317862D1 - Lichtemittierende Halbleitervorrichtung - Google Patents
Lichtemittierende HalbleitervorrichtungInfo
- Publication number
- DE60317862D1 DE60317862D1 DE60317862T DE60317862T DE60317862D1 DE 60317862 D1 DE60317862 D1 DE 60317862D1 DE 60317862 T DE60317862 T DE 60317862T DE 60317862 T DE60317862 T DE 60317862T DE 60317862 D1 DE60317862 D1 DE 60317862D1
- Authority
- DE
- Germany
- Prior art keywords
- light
- semiconductor device
- emitting semiconductor
- emitting
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002178531A JP2004022969A (ja) | 2002-06-19 | 2002-06-19 | 半導体発光素子 |
| JP2002178536A JP2004022970A (ja) | 2002-06-19 | 2002-06-19 | 半導体発光素子 |
| JP2002178531 | 2002-06-19 | ||
| JP2002178536 | 2002-06-19 | ||
| JP2002252837 | 2002-08-30 | ||
| JP2002252837A JP4300004B2 (ja) | 2002-08-30 | 2002-08-30 | 半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60317862D1 true DE60317862D1 (de) | 2008-01-17 |
| DE60317862T2 DE60317862T2 (de) | 2008-12-18 |
Family
ID=29740559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60317862T Expired - Lifetime DE60317862T2 (de) | 2002-06-19 | 2003-04-24 | Lichtemittierende Halbleitervorrichtung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6927426B2 (de) |
| EP (1) | EP1389814B1 (de) |
| KR (1) | KR100568701B1 (de) |
| CN (1) | CN1324772C (de) |
| DE (1) | DE60317862T2 (de) |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4598767B2 (ja) * | 2003-07-30 | 2010-12-15 | パナソニック株式会社 | 半導体発光装置、発光モジュール、および照明装置 |
| ATE467701T1 (de) * | 2003-08-08 | 2010-05-15 | Centre Nat Rech Scient | Verfahren zur herstellung von quantenpunkten aus indiumnitrid und erzeugnis enthaltend diese quantenpunkten |
| TWI243489B (en) * | 2004-04-14 | 2005-11-11 | Genesis Photonics Inc | Single chip light emitting diode with red, blue and green three wavelength light emitting spectra |
| CN1595670B (zh) * | 2004-06-25 | 2011-12-28 | 清华大学 | 宽谱白光led的量子点有源区结构及其外延生长方法 |
| KR100513923B1 (ko) * | 2004-08-13 | 2005-09-08 | 재단법인서울대학교산학협력재단 | 질화물 반도체층을 성장시키는 방법 및 이를 이용하는 질화물 반도체 발광소자 |
| US8309843B2 (en) * | 2004-08-19 | 2012-11-13 | Banpil Photonics, Inc. | Photovoltaic cells based on nanoscale structures |
| US20090200538A1 (en) * | 2004-09-28 | 2009-08-13 | Sumitomo Chemical Company, Limited | Group lll-V compound semiconductor and a method for producing the same |
| EP1670068A1 (de) * | 2004-12-09 | 2006-06-14 | SuperNova Optoelectronics Corporation | Weiss-Licht emittierende Vorrichtung und Herstelungsverfahren |
| WO2007011803A2 (en) * | 2005-07-18 | 2007-01-25 | Mrv Communications, Inc. | Laser wavelength stabilization |
| US7977703B2 (en) * | 2005-11-22 | 2011-07-12 | Rohm Co., Ltd. | Nitride semiconductor device having a zinc-based substrate |
| US9406505B2 (en) * | 2006-02-23 | 2016-08-02 | Allos Semiconductors Gmbh | Nitride semiconductor component and process for its production |
| US20070240631A1 (en) * | 2006-04-14 | 2007-10-18 | Applied Materials, Inc. | Epitaxial growth of compound nitride semiconductor structures |
| US20070256635A1 (en) * | 2006-05-02 | 2007-11-08 | Applied Materials, Inc. A Delaware Corporation | UV activation of NH3 for III-N deposition |
| KR100716648B1 (ko) * | 2006-05-12 | 2007-05-09 | 서울옵토디바이스주식회사 | 복수개의 발광셀들을 갖는 발광소자 및 그 제조방법 |
| US20080247430A1 (en) * | 2006-07-18 | 2008-10-09 | Shengzhong Zhang | Laser wavelength stabilization |
| EP2074666B1 (de) * | 2006-09-08 | 2012-11-14 | Agency for Science, Technology and Research | Leuchtdiode mit abstimmbarer wellenlänge |
| JP2008109084A (ja) | 2006-09-26 | 2008-05-08 | Showa Denko Kk | Ｉｉｉ族窒化物化合物半導体発光素子の製造方法、及びｉｉｉ族窒化物化合物半導体発光素子、並びにランプ |
| WO2008066712A2 (en) * | 2006-11-15 | 2008-06-05 | The Regents Of The University Of California | High light extraction efficiency light emitting diode (led) with emitters within structured materials |
| KR100898586B1 (ko) * | 2007-03-30 | 2009-05-20 | 서울옵토디바이스주식회사 | 발광 다이오드 |
| US20080314311A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Hvpe showerhead design |
| JP2009038239A (ja) * | 2007-08-02 | 2009-02-19 | Toshiba Corp | 光半導体装置 |
| US20090149008A1 (en) * | 2007-10-05 | 2009-06-11 | Applied Materials, Inc. | Method for depositing group iii/v compounds |
| TWI374556B (en) | 2007-12-12 | 2012-10-11 | Au Optronics Corp | White light emitting device and producing method thereof |
| GB2460666A (en) * | 2008-06-04 | 2009-12-09 | Sharp Kk | Exciton spin control in AlGaInN quantum dots |
| JP4510931B2 (ja) * | 2008-09-09 | 2010-07-28 | パナソニック株式会社 | 窒化物系半導体発光素子およびその製造方法 |
| JP2010232597A (ja) * | 2009-03-30 | 2010-10-14 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法 |
| US8568529B2 (en) | 2009-04-10 | 2013-10-29 | Applied Materials, Inc. | HVPE chamber hardware |
| US8183132B2 (en) * | 2009-04-10 | 2012-05-22 | Applied Materials, Inc. | Methods for fabricating group III nitride structures with a cluster tool |
| US8138069B2 (en) * | 2009-04-24 | 2012-03-20 | Applied Materials, Inc. | Substrate pretreatment for subsequent high temperature group III depositions |
| US20100273291A1 (en) * | 2009-04-28 | 2010-10-28 | Applied Materials, Inc. | Decontamination of mocvd chamber using nh3 purge after in-situ cleaning |
| WO2010127156A2 (en) * | 2009-04-29 | 2010-11-04 | Applied Materials, Inc. | Method of forming in-situ pre-gan deposition layer in hvpe |
| JP5529963B2 (ja) | 2009-07-20 | 2014-06-25 | ソイテック | 半導体構造体または半導体デバイスを形成する方法および光起電力構造体 |
| US20110057213A1 (en) * | 2009-09-08 | 2011-03-10 | Koninklijke Philips Electronics N.V. | Iii-nitride light emitting device with curvat1jre control layer |
| US8580593B2 (en) * | 2009-09-10 | 2013-11-12 | Micron Technology, Inc. | Epitaxial formation structures and associated methods of manufacturing solid state lighting devices |
| US20110220945A1 (en) * | 2010-03-09 | 2011-09-15 | Dae Sung Kang | Light emitting device and light emitting device package having the same |
| US20110256692A1 (en) | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
| TWI534291B (zh) | 2011-03-18 | 2016-05-21 | 應用材料股份有限公司 | 噴淋頭組件 |
| US8927958B2 (en) * | 2011-07-12 | 2015-01-06 | Epistar Corporation | Light-emitting element with multiple light-emitting stacked layers |
| TWI555226B (zh) * | 2011-07-12 | 2016-10-21 | 晶元光電股份有限公司 | 具有多層發光疊層的發光元件 |
| US20130015461A1 (en) * | 2011-07-13 | 2013-01-17 | Kun Hsin Technology Inc. | Light-emitting Device Capable of Producing White Light And Light Mixing Method For Producing White Light With Same |
| DE102011116232B4 (de) * | 2011-10-17 | 2020-04-09 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
| JP6271934B2 (ja) * | 2012-11-02 | 2018-01-31 | キヤノン株式会社 | 窒化物半導体面発光レーザ及びその製造方法 |
| KR102158576B1 (ko) * | 2014-02-18 | 2020-09-22 | 엘지이노텍 주식회사 | 자외선 발광소자 및 이를 구비하는 발광소자 패키지 |
| JP6595801B2 (ja) | 2014-05-30 | 2019-10-23 | エルジー イノテック カンパニー リミテッド | 発光素子 |
| KR102455084B1 (ko) * | 2016-02-23 | 2022-10-14 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 패키지 및 이를 갖는 표시장치 |
| CN108209941B (zh) * | 2018-01-03 | 2021-06-08 | 中国科学院半导体研究所 | 血氧探测器探测单元、探头及其制备方法 |
| CN111128899B (zh) * | 2018-10-31 | 2022-03-22 | 成都辰显光电有限公司 | 外延基板及其制造方法 |
| CN112331130A (zh) * | 2019-07-31 | 2021-02-05 | Tcl集团股份有限公司 | 一种量子点发光二极管的驱动方法、驱动装置及显示装置 |
| CN112289897A (zh) * | 2020-09-17 | 2021-01-29 | 华灿光电（浙江）有限公司 | 发光二极管外延片的制造方法及发光二极管外延片 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS618981A (ja) * | 1984-06-23 | 1986-01-16 | Oki Electric Ind Co Ltd | 半導体発光素子 |
| JP2910023B2 (ja) * | 1993-12-24 | 1999-06-23 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| US5656832A (en) * | 1994-03-09 | 1997-08-12 | Kabushiki Kaisha Toshiba | Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness |
| JPH07254732A (ja) * | 1994-03-15 | 1995-10-03 | Toshiba Corp | 半導体発光装置 |
| US5777350A (en) * | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
| US5798537A (en) * | 1995-08-31 | 1998-08-25 | Kabushiki Kaisha Toshiba | Blue light-emitting device |
| JP3905935B2 (ja) * | 1995-09-01 | 2007-04-18 | 株式会社東芝 | 半導体素子及び半導体素子の製造方法 |
| US5959307A (en) * | 1995-11-06 | 1999-09-28 | Nichia Chemical Industries Ltd. | Nitride semiconductor device |
| US5684309A (en) * | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
| US5834331A (en) * | 1996-10-17 | 1998-11-10 | Northwestern University | Method for making III-Nitride laser and detection device |
| JP3282174B2 (ja) * | 1997-01-29 | 2002-05-13 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
| EP0881691B1 (de) * | 1997-05-30 | 2004-09-01 | Matsushita Electric Industrial Co., Ltd. | Anordnung mit Quanten-Schachteln |
| US6266355B1 (en) * | 1997-09-12 | 2001-07-24 | Sdl, Inc. | Group III-V nitride laser devices with cladding layers to suppress defects such as cracking |
| JPH11135838A (ja) * | 1997-10-20 | 1999-05-21 | Ind Technol Res Inst | 白色発光ダイオード及びその製造方法 |
| JPH11243251A (ja) * | 1998-02-26 | 1999-09-07 | Toshiba Corp | 半導体レーザ装置 |
| EP0975027A2 (de) * | 1998-07-23 | 2000-01-26 | Sony Corporation | Licht-emittierende Vorrichtung und Herstellungsverfahren |
| JP2000244060A (ja) * | 1998-12-22 | 2000-09-08 | Sony Corp | 半導体発光装置およびその製造方法 |
| US6744800B1 (en) * | 1998-12-30 | 2004-06-01 | Xerox Corporation | Method and structure for nitride based laser diode arrays on an insulating substrate |
| US6521917B1 (en) * | 1999-03-26 | 2003-02-18 | Matsushita Electric Industrial Co., Ltd. | Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation |
| JP2001077475A (ja) * | 1999-09-03 | 2001-03-23 | Rohm Co Ltd | 半導体レーザ |
| US6531719B2 (en) * | 1999-09-29 | 2003-03-11 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
| JP2001308374A (ja) * | 2000-03-04 | 2001-11-02 | Joryoku Kooria Kk | クアンタムホールの形成方法とそのクアンタムホールを用いる半導体発光素子及びその製造方法 |
| JP4063520B2 (ja) * | 2000-11-30 | 2008-03-19 | 日本碍子株式会社 | 半導体発光素子 |
| US20030047743A1 (en) * | 2001-09-04 | 2003-03-13 | Gang Li | Semiconductor light emitting device |
| TW522534B (en) * | 2001-09-11 | 2003-03-01 | Hsiu-Hen Chang | Light source of full color LED using die bonding and packaging technology |
| US6724013B2 (en) * | 2001-12-21 | 2004-04-20 | Xerox Corporation | Edge-emitting nitride-based laser diode with p-n tunnel junction current injection |
-
2003
- 2003-03-26 CN CNB031075312A patent/CN1324772C/zh not_active Expired - Lifetime
- 2003-03-26 KR KR1020030018788A patent/KR100568701B1/ko active IP Right Grant
- 2003-04-24 EP EP03090120A patent/EP1389814B1/de not_active Expired - Lifetime
- 2003-04-24 DE DE60317862T patent/DE60317862T2/de not_active Expired - Lifetime
- 2003-04-30 US US10/426,464 patent/US6927426B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1389814A2 (de) | 2004-02-18 |
| EP1389814A3 (de) | 2005-01-26 |
| KR100568701B1 (ko) | 2006-04-07 |
| CN1467888A (zh) | 2004-01-14 |
| US20030234404A1 (en) | 2003-12-25 |
| DE60317862T2 (de) | 2008-12-18 |
| EP1389814B1 (de) | 2007-12-05 |
| CN1324772C (zh) | 2007-07-04 |
| US6927426B2 (en) | 2005-08-09 |
| KR20040002471A (ko) | 2004-01-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8332 | No legal effect for de | ||
| 8370 | Indication of lapse of patent is to be deleted | ||
| 8364 | No opposition during term of opposition |