NL8802934A - Geheugen met een bitlijnbelastingsschakeling van variabele impedantiewaarde. - Google Patents
Geheugen met een bitlijnbelastingsschakeling van variabele impedantiewaarde. Download PDFInfo
- Publication number
- NL8802934A NL8802934A NL8802934A NL8802934A NL8802934A NL 8802934 A NL8802934 A NL 8802934A NL 8802934 A NL8802934 A NL 8802934A NL 8802934 A NL8802934 A NL 8802934A NL 8802934 A NL8802934 A NL 8802934A
- Authority
- NL
- Netherlands
- Prior art keywords
- transistor
- type
- pmos
- transistors
- electrode
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62299084A JPH01140491A (ja) | 1987-11-27 | 1987-11-27 | メモリ装置 |
| JP29908487 | 1987-11-27 | ||
| JP62301365A JPH01143096A (ja) | 1987-11-28 | 1987-11-28 | メモリ装置 |
| JP30136587 | 1987-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8802934A true NL8802934A (nl) | 1989-06-16 |
Family
ID=26561781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8802934A NL8802934A (nl) | 1987-11-27 | 1988-11-28 | Geheugen met een bitlijnbelastingsschakeling van variabele impedantiewaarde. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5075891A (fr) |
| FR (1) | FR2623932B1 (fr) |
| GB (1) | GB2213009B (fr) |
| NL (1) | NL8802934A (fr) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5182726A (en) * | 1991-01-23 | 1993-01-26 | Texas Instruments Incorporated | Circuit and method for discharging a memory array |
| WO1992022070A1 (fr) * | 1991-05-30 | 1992-12-10 | Integrated Device Technology, Inc. | Memoire statiques et procedes de lecture de memoires statiques |
| US5228106A (en) * | 1991-05-30 | 1993-07-13 | Integrated Device Technology, Inc. | Track-and-regenerate amplifiers and memories using such amplifiers |
| JP3176985B2 (ja) * | 1992-05-27 | 2001-06-18 | 株式会社東芝 | 半導体メモリ |
| US5508964A (en) * | 1993-01-08 | 1996-04-16 | Texas Instruments Incorporated | Write recovery time minimization for Bi-CMOS SRAM |
| EP0936627B1 (fr) | 1998-02-13 | 2004-10-20 | STMicroelectronics S.r.l. | Amplificateur de détection pour mémoire non volatile à basse tension |
| CA2613400C (fr) * | 2005-06-24 | 2014-08-26 | The Flewelling Ford Family Trust | Procede et dispositif d'abaissement d'impedance d'un transistor a effet de champ |
| US7436696B2 (en) * | 2006-04-28 | 2008-10-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Read-preferred SRAM cell design |
| US9094277B2 (en) * | 2011-09-07 | 2015-07-28 | Viasat, Inc. | Digital compensation technique using area efficient tri-state architecture |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5951072B2 (ja) * | 1979-02-26 | 1984-12-12 | 日本電気株式会社 | 半導体メモリ装置 |
| JPS6027114B2 (ja) * | 1980-07-24 | 1985-06-27 | 日本電気株式会社 | メモリ装置 |
| US4791613A (en) * | 1983-09-21 | 1988-12-13 | Inmos Corporation | Bit line and column circuitry used in a semiconductor memory |
| US4636983A (en) * | 1984-12-20 | 1987-01-13 | Cypress Semiconductor Corp. | Memory array biasing circuit for high speed CMOS device |
| US4730279A (en) * | 1985-03-30 | 1988-03-08 | Kabushiki Kaisha Toshiba | Static semiconductor memory device |
| GB2176357B (en) * | 1985-06-12 | 1989-07-12 | Stc Plc | Improvements in semiconductor memories |
| JPH0640439B2 (ja) * | 1986-02-17 | 1994-05-25 | 日本電気株式会社 | 半導体記憶装置 |
| JPS62200595A (ja) * | 1986-02-26 | 1987-09-04 | Sony Corp | メモリ装置 |
-
1988
- 1988-11-22 GB GB8827224A patent/GB2213009B/en not_active Expired - Lifetime
- 1988-11-25 FR FR8815463A patent/FR2623932B1/fr not_active Expired - Fee Related
- 1988-11-28 US US07/276,683 patent/US5075891A/en not_active Expired - Lifetime
- 1988-11-28 NL NL8802934A patent/NL8802934A/nl not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| GB2213009B (en) | 1992-02-05 |
| FR2623932A1 (fr) | 1989-06-02 |
| FR2623932B1 (fr) | 1993-10-15 |
| GB8827224D0 (en) | 1988-12-29 |
| US5075891A (en) | 1991-12-24 |
| GB2213009A (en) | 1989-08-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BA | A request for search or an international-type search has been filed | ||
| BC | A request for examination has been filed | ||
| BV | The patent application has lapsed |