FR2623932B1 - Memoire comportant un circuit de charge de ligne de bit a impedance variable - Google Patents

Memoire comportant un circuit de charge de ligne de bit a impedance variable

Info

Publication number
FR2623932B1
FR2623932B1 FR8815463A FR8815463A FR2623932B1 FR 2623932 B1 FR2623932 B1 FR 2623932B1 FR 8815463 A FR8815463 A FR 8815463A FR 8815463 A FR8815463 A FR 8815463A FR 2623932 B1 FR2623932 B1 FR 2623932B1
Authority
FR
France
Prior art keywords
memory
bit line
charging circuit
variable impedance
line charging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8815463A
Other languages
English (en)
Other versions
FR2623932A1 (fr
Inventor
Hideki Usuki Shumpe Masatoshi Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62299084A external-priority patent/JPH01140491A/ja
Priority claimed from JP62301365A external-priority patent/JPH01143096A/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2623932A1 publication Critical patent/FR2623932A1/fr
Application granted granted Critical
Publication of FR2623932B1 publication Critical patent/FR2623932B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
FR8815463A 1987-11-27 1988-11-25 Memoire comportant un circuit de charge de ligne de bit a impedance variable Expired - Fee Related FR2623932B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62299084A JPH01140491A (ja) 1987-11-27 1987-11-27 メモリ装置
JP62301365A JPH01143096A (ja) 1987-11-28 1987-11-28 メモリ装置

Publications (2)

Publication Number Publication Date
FR2623932A1 FR2623932A1 (fr) 1989-06-02
FR2623932B1 true FR2623932B1 (fr) 1993-10-15

Family

ID=26561781

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8815463A Expired - Fee Related FR2623932B1 (fr) 1987-11-27 1988-11-25 Memoire comportant un circuit de charge de ligne de bit a impedance variable

Country Status (4)

Country Link
US (1) US5075891A (fr)
FR (1) FR2623932B1 (fr)
GB (1) GB2213009B (fr)
NL (1) NL8802934A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5182726A (en) * 1991-01-23 1993-01-26 Texas Instruments Incorporated Circuit and method for discharging a memory array
WO1992022070A1 (fr) * 1991-05-30 1992-12-10 Integrated Device Technology, Inc. Memoire statiques et procedes de lecture de memoires statiques
US5228106A (en) * 1991-05-30 1993-07-13 Integrated Device Technology, Inc. Track-and-regenerate amplifiers and memories using such amplifiers
JP3176985B2 (ja) * 1992-05-27 2001-06-18 株式会社東芝 半導体メモリ
US5508964A (en) * 1993-01-08 1996-04-16 Texas Instruments Incorporated Write recovery time minimization for Bi-CMOS SRAM
DE69827109D1 (de) * 1998-02-13 2004-11-25 St Microelectronics Srl Abfühlverstärker für nichtflüchtigen Speicher mit niedriger Spannung
CA2613400C (fr) * 2005-06-24 2014-08-26 The Flewelling Ford Family Trust Procede et dispositif d'abaissement d'impedance d'un transistor a effet de champ
US7436696B2 (en) * 2006-04-28 2008-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Read-preferred SRAM cell design
US9094277B2 (en) * 2011-09-07 2015-07-28 Viasat, Inc. Digital compensation technique using area efficient tri-state architecture

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5951072B2 (ja) * 1979-02-26 1984-12-12 日本電気株式会社 半導体メモリ装置
JPS6027114B2 (ja) * 1980-07-24 1985-06-27 日本電気株式会社 メモリ装置
US4791613A (en) * 1983-09-21 1988-12-13 Inmos Corporation Bit line and column circuitry used in a semiconductor memory
US4636983A (en) * 1984-12-20 1987-01-13 Cypress Semiconductor Corp. Memory array biasing circuit for high speed CMOS device
US4730279A (en) * 1985-03-30 1988-03-08 Kabushiki Kaisha Toshiba Static semiconductor memory device
GB2176357B (en) * 1985-06-12 1989-07-12 Stc Plc Improvements in semiconductor memories
JPH0640439B2 (ja) * 1986-02-17 1994-05-25 日本電気株式会社 半導体記憶装置
JPS62200595A (ja) * 1986-02-26 1987-09-04 Sony Corp メモリ装置

Also Published As

Publication number Publication date
US5075891A (en) 1991-12-24
GB2213009A (en) 1989-08-02
GB8827224D0 (en) 1988-12-29
NL8802934A (nl) 1989-06-16
FR2623932A1 (fr) 1989-06-02
GB2213009B (en) 1992-02-05

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20070731