NL8602021A - Werkwijze voor het vervaardigen van een beeldopneeminrichting voor radiografische toepassingen. - Google Patents
Werkwijze voor het vervaardigen van een beeldopneeminrichting voor radiografische toepassingen. Download PDFInfo
- Publication number
- NL8602021A NL8602021A NL8602021A NL8602021A NL8602021A NL 8602021 A NL8602021 A NL 8602021A NL 8602021 A NL8602021 A NL 8602021A NL 8602021 A NL8602021 A NL 8602021A NL 8602021 A NL8602021 A NL 8602021A
- Authority
- NL
- Netherlands
- Prior art keywords
- image pick
- layer
- csl
- elements
- protective layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000010410 layer Substances 0.000 claims description 14
- 239000011241 protective layer Substances 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 230000005855 radiation Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002601 radiography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
- G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8602021A NL8602021A (nl) | 1986-08-07 | 1986-08-07 | Werkwijze voor het vervaardigen van een beeldopneeminrichting voor radiografische toepassingen. |
DE8787201429T DE3762176D1 (de) | 1986-08-07 | 1987-07-24 | Herstellungsverfahren einer bildaufnahmeeinrichtung fuer radiographische zwecke. |
EP87201429A EP0257678B1 (en) | 1986-08-07 | 1987-07-24 | Method of manufacturing an image detection device for radiographic purposes |
US07/079,084 US4746619A (en) | 1986-08-07 | 1987-07-27 | Method of manufacturing an image detection device for radiographic purposes |
IN581/CAL/87A IN165686B (ko) | 1986-08-07 | 1987-07-29 | |
IL83428A IL83428A (en) | 1986-08-07 | 1987-08-04 | Method of manufacturing an image recording device for radiographic purposes |
KR1019870008600A KR880003430A (ko) | 1986-08-07 | 1987-08-05 | 방사선용 영상탐지 장치 제조방법 |
JP62197987A JPS6347689A (ja) | 1986-08-07 | 1987-08-07 | 放射線写真用の像検出装置を製造する方法 |
US07/197,105 US4906850A (en) | 1986-08-07 | 1988-05-20 | Radiographic image detection device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8602021 | 1986-08-07 | ||
NL8602021A NL8602021A (nl) | 1986-08-07 | 1986-08-07 | Werkwijze voor het vervaardigen van een beeldopneeminrichting voor radiografische toepassingen. |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8602021A true NL8602021A (nl) | 1988-03-01 |
Family
ID=19848383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8602021A NL8602021A (nl) | 1986-08-07 | 1986-08-07 | Werkwijze voor het vervaardigen van een beeldopneeminrichting voor radiografische toepassingen. |
Country Status (8)
Country | Link |
---|---|
US (2) | US4746619A (ko) |
EP (1) | EP0257678B1 (ko) |
JP (1) | JPS6347689A (ko) |
KR (1) | KR880003430A (ko) |
DE (1) | DE3762176D1 (ko) |
IL (1) | IL83428A (ko) |
IN (1) | IN165686B (ko) |
NL (1) | NL8602021A (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6031892A (en) * | 1989-12-05 | 2000-02-29 | University Of Massachusetts Medical Center | System for quantitative radiographic imaging |
US5187369A (en) * | 1990-10-01 | 1993-02-16 | General Electric Company | High sensitivity, high resolution, solid state x-ray imaging device with barrier layer |
US5153438A (en) * | 1990-10-01 | 1992-10-06 | General Electric Company | Method of forming an x-ray imaging array and the array |
US5059800A (en) * | 1991-04-19 | 1991-10-22 | General Electric Company | Two dimensional mosaic scintillation detector |
US5208460A (en) * | 1991-09-23 | 1993-05-04 | General Electric Company | Photodetector scintillator radiation imager having high efficiency light collection |
US5463225A (en) * | 1992-06-01 | 1995-10-31 | General Electric Company | Solid state radiation imager with high integrity barrier layer and method of fabricating |
US5368882A (en) * | 1993-08-25 | 1994-11-29 | Minnesota Mining And Manufacturing Company | Process for forming a radiation detector |
US5401668A (en) * | 1993-09-02 | 1995-03-28 | General Electric Company | Method for fabrication solid state radiation imager having improved scintillator adhesion |
US5596198A (en) * | 1994-04-22 | 1997-01-21 | The Regents, University Of California | Gamma ray camera |
US7019301B2 (en) | 1997-02-14 | 2006-03-28 | Hamamatsu Photonics K.K. | Radiation detection device and method of making the same |
JP5031172B2 (ja) | 2000-09-11 | 2012-09-19 | 浜松ホトニクス株式会社 | シンチレータパネル、放射線イメージセンサおよびそれらの製造方法 |
EP1326093A4 (en) * | 2000-09-11 | 2006-11-15 | Hamamatsu Photonics Kk | SCINTILLATE PANEL, RADIATION IMAGE SENSOR AND METHOD FOR THE PRODUCTION THEREOF |
US6483115B1 (en) * | 2000-11-08 | 2002-11-19 | General Electric Company | Method for enhancing scintillator adhesion to digital x-ray detectors |
US6324249B1 (en) | 2001-03-21 | 2001-11-27 | Agilent Technologies, Inc. | Electronic planar laminography system and method |
US6707046B2 (en) * | 2002-01-03 | 2004-03-16 | General Electric Company | Optimized scintillator and pixilated photodiode detector array for multi-slice CT x-ray detector using backside illumination |
DE102010004890A1 (de) * | 2010-01-18 | 2011-07-21 | Siemens Aktiengesellschaft, 80333 | Photodiodenarray, Strahlendetektor und Verfahren zur Herstellung eines solchen Photodiodenarrays und eines solchen Strahlendetektors |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3936645A (en) * | 1974-03-25 | 1976-02-03 | Radiologic Sciences, Inc. | Cellularized Luminescent structures |
US4197633A (en) * | 1977-09-01 | 1980-04-15 | Honeywell, Inc. | Hybrid mosaic IR/CCD focal plane |
US4234792A (en) * | 1977-09-29 | 1980-11-18 | Raytheon Company | Scintillator crystal radiation detector |
US4290844A (en) * | 1979-02-26 | 1981-09-22 | Carson Alexiou Corporation | Focal plane photo-detector mosaic array fabrication |
JPS55129782A (en) * | 1979-03-30 | 1980-10-07 | Hitachi Medical Corp | Radiant ray detector |
US4411059A (en) * | 1979-10-18 | 1983-10-25 | Picker Corporation | Method for manufacturing a charge splitting resistive layer for a semiconductor gamma camera |
FR2575602B1 (fr) * | 1984-12-27 | 1987-01-30 | Thomson Csf | Dispositif photosensible de grand format, et procede d'utilisation |
US4686761A (en) * | 1985-03-21 | 1987-08-18 | The United States Of America As Represented By The Secretary Of The Army | Method of fabrication of low crosstalk photodiode array |
US4618380A (en) * | 1985-06-18 | 1986-10-21 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of fabricating an imaging X-ray spectrometer |
JPS6243585A (ja) * | 1985-08-21 | 1987-02-25 | Toshiba Corp | X線ct用検出器 |
US4672207A (en) * | 1985-08-21 | 1987-06-09 | The United States Of America As Represented By The United States Department Of Energy | Readout system for multi-crystal gamma cameras |
-
1986
- 1986-08-07 NL NL8602021A patent/NL8602021A/nl not_active Application Discontinuation
-
1987
- 1987-07-24 DE DE8787201429T patent/DE3762176D1/de not_active Revoked
- 1987-07-24 EP EP87201429A patent/EP0257678B1/en not_active Revoked
- 1987-07-27 US US07/079,084 patent/US4746619A/en not_active Expired - Fee Related
- 1987-07-29 IN IN581/CAL/87A patent/IN165686B/en unknown
- 1987-08-04 IL IL83428A patent/IL83428A/xx not_active IP Right Cessation
- 1987-08-05 KR KR1019870008600A patent/KR880003430A/ko not_active Application Discontinuation
- 1987-08-07 JP JP62197987A patent/JPS6347689A/ja active Pending
-
1988
- 1988-05-20 US US07/197,105 patent/US4906850A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0257678B1 (en) | 1990-04-04 |
US4906850A (en) | 1990-03-06 |
IL83428A (en) | 1990-12-23 |
IL83428A0 (en) | 1988-01-31 |
JPS6347689A (ja) | 1988-02-29 |
EP0257678A1 (en) | 1988-03-02 |
US4746619A (en) | 1988-05-24 |
DE3762176D1 (de) | 1990-05-10 |
IN165686B (ko) | 1989-12-09 |
KR880003430A (ko) | 1988-05-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1B | A search report has been drawn up | ||
BV | The patent application has lapsed |