NL8204133A - Werkwijze voor het maken van kristallen. - Google Patents
Werkwijze voor het maken van kristallen. Download PDFInfo
- Publication number
- NL8204133A NL8204133A NL8204133A NL8204133A NL8204133A NL 8204133 A NL8204133 A NL 8204133A NL 8204133 A NL8204133 A NL 8204133A NL 8204133 A NL8204133 A NL 8204133A NL 8204133 A NL8204133 A NL 8204133A
- Authority
- NL
- Netherlands
- Prior art keywords
- crystal
- melt
- container
- oxygen concentration
- rotational speed
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17120581 | 1981-10-26 | ||
JP17120581A JPH0244799B2 (ja) | 1981-10-26 | 1981-10-26 | Ketsushoseichohoho |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8204133A true NL8204133A (nl) | 1983-05-16 |
Family
ID=15918967
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8204133A NL8204133A (nl) | 1981-10-26 | 1982-10-26 | Werkwijze voor het maken van kristallen. |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH0244799B2 (de) |
CA (1) | CA1223798A (de) |
DE (1) | DE3239570C2 (de) |
FR (1) | FR2515216B1 (de) |
GB (1) | GB2109267B (de) |
NL (1) | NL8204133A (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS605096A (ja) * | 1983-06-22 | 1985-01-11 | Shin Etsu Handotai Co Ltd | 単結晶製造方法および装置 |
JPS6033296A (ja) * | 1983-07-29 | 1985-02-20 | Toshiba Ceramics Co Ltd | 単結晶半導体引上装置 |
US4565671A (en) * | 1983-08-05 | 1986-01-21 | Kabushiki Kaisha Toshiba | Single crystal manufacturing apparatus |
JPS60137892A (ja) * | 1983-12-26 | 1985-07-22 | Toshiba Ceramics Co Ltd | 石英ガラスルツボ |
JPS6153187A (ja) * | 1984-08-24 | 1986-03-17 | Sony Corp | 単結晶成長装置 |
EP0173764B1 (de) * | 1984-08-31 | 1989-12-13 | Gakei Electric Works Co., Ltd. | Verfahren und Vorrichtung zur Herstellung von Einkristallen |
JPS62105998A (ja) * | 1985-10-31 | 1987-05-16 | Sony Corp | シリコン基板の製法 |
US4836788A (en) * | 1985-11-12 | 1989-06-06 | Sony Corporation | Production of solid-state image pick-up device with uniform distribution of dopants |
JPS62202528A (ja) * | 1986-03-03 | 1987-09-07 | Toshiba Corp | 半導体基板の製造方法 |
US4659423A (en) * | 1986-04-28 | 1987-04-21 | International Business Machines Corporation | Semiconductor crystal growth via variable melt rotation |
JP2561072B2 (ja) * | 1986-04-30 | 1996-12-04 | 東芝セラミツクス株式会社 | 単結晶の育成方法及びその装置 |
JP2556966B2 (ja) * | 1986-04-30 | 1996-11-27 | 東芝セラミツクス株式会社 | 単結晶の育成装置 |
JPS645992A (en) * | 1987-06-29 | 1989-01-10 | Sony Corp | Method for growing crystal |
JP2651481B2 (ja) * | 1987-09-21 | 1997-09-10 | 株式会社 半導体エネルギー研究所 | 超伝導材料の作製方法 |
JPH01282185A (ja) * | 1988-05-09 | 1989-11-14 | Nippon Telegr & Teleph Corp <Ntt> | 結晶の育成方法 |
JPH0431386A (ja) * | 1990-05-25 | 1992-02-03 | Shin Etsu Handotai Co Ltd | 半導体単結晶引上方法 |
JPH0442894A (ja) * | 1990-06-07 | 1992-02-13 | Shin Etsu Handotai Co Ltd | シリコン単結晶の成長方法 |
JP2767074B2 (ja) * | 1990-07-13 | 1998-06-18 | 信越半導体 株式会社 | シリコン単結晶の引上方法 |
US5196085A (en) * | 1990-12-28 | 1993-03-23 | Massachusetts Institute Of Technology | Active magnetic flow control in Czochralski systems |
JP2734445B2 (ja) * | 1996-04-16 | 1998-03-30 | ソニー株式会社 | 結晶成長方法 |
JP4463957B2 (ja) * | 2000-09-20 | 2010-05-19 | 信越半導体株式会社 | シリコンウエーハの製造方法およびシリコンウエーハ |
JP6680108B2 (ja) | 2016-06-28 | 2020-04-15 | 株式会社Sumco | シリコン単結晶の製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3607139A (en) * | 1968-05-02 | 1971-09-21 | Air Reduction | Single crystal growth and diameter control by magnetic melt agitation |
GB2059932B (en) * | 1979-09-20 | 1983-10-12 | Sony Corp | Solidification processes |
-
1981
- 1981-10-26 JP JP17120581A patent/JPH0244799B2/ja not_active Expired - Lifetime
-
1982
- 1982-10-22 CA CA000414053A patent/CA1223798A/en not_active Expired
- 1982-10-25 GB GB08230370A patent/GB2109267B/en not_active Expired
- 1982-10-26 NL NL8204133A patent/NL8204133A/nl not_active Application Discontinuation
- 1982-10-26 DE DE19823239570 patent/DE3239570C2/de not_active Expired - Lifetime
- 1982-10-26 FR FR8217924A patent/FR2515216B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2109267A (en) | 1983-06-02 |
GB2109267B (en) | 1984-12-05 |
FR2515216B1 (fr) | 1985-09-13 |
DE3239570C2 (de) | 1993-11-18 |
JPS5874594A (ja) | 1983-05-06 |
FR2515216A1 (fr) | 1983-04-29 |
DE3239570A1 (de) | 1983-05-05 |
JPH0244799B2 (ja) | 1990-10-05 |
CA1223798A (en) | 1987-07-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A85 | Still pending on 85-01-01 | ||
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
BV | The patent application has lapsed |