NL8204133A - Werkwijze voor het maken van kristallen. - Google Patents

Werkwijze voor het maken van kristallen. Download PDF

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Publication number
NL8204133A
NL8204133A NL8204133A NL8204133A NL8204133A NL 8204133 A NL8204133 A NL 8204133A NL 8204133 A NL8204133 A NL 8204133A NL 8204133 A NL8204133 A NL 8204133A NL 8204133 A NL8204133 A NL 8204133A
Authority
NL
Netherlands
Prior art keywords
crystal
melt
container
oxygen concentration
rotational speed
Prior art date
Application number
NL8204133A
Other languages
English (en)
Dutch (nl)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of NL8204133A publication Critical patent/NL8204133A/nl

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL8204133A 1981-10-26 1982-10-26 Werkwijze voor het maken van kristallen. NL8204133A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17120581 1981-10-26
JP17120581A JPH0244799B2 (ja) 1981-10-26 1981-10-26 Ketsushoseichohoho

Publications (1)

Publication Number Publication Date
NL8204133A true NL8204133A (nl) 1983-05-16

Family

ID=15918967

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8204133A NL8204133A (nl) 1981-10-26 1982-10-26 Werkwijze voor het maken van kristallen.

Country Status (6)

Country Link
JP (1) JPH0244799B2 (de)
CA (1) CA1223798A (de)
DE (1) DE3239570C2 (de)
FR (1) FR2515216B1 (de)
GB (1) GB2109267B (de)
NL (1) NL8204133A (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605096A (ja) * 1983-06-22 1985-01-11 Shin Etsu Handotai Co Ltd 単結晶製造方法および装置
JPS6033296A (ja) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd 単結晶半導体引上装置
US4565671A (en) * 1983-08-05 1986-01-21 Kabushiki Kaisha Toshiba Single crystal manufacturing apparatus
JPS60137892A (ja) * 1983-12-26 1985-07-22 Toshiba Ceramics Co Ltd 石英ガラスルツボ
JPS6153187A (ja) * 1984-08-24 1986-03-17 Sony Corp 単結晶成長装置
EP0173764B1 (de) * 1984-08-31 1989-12-13 Gakei Electric Works Co., Ltd. Verfahren und Vorrichtung zur Herstellung von Einkristallen
JPS62105998A (ja) * 1985-10-31 1987-05-16 Sony Corp シリコン基板の製法
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants
JPS62202528A (ja) * 1986-03-03 1987-09-07 Toshiba Corp 半導体基板の製造方法
US4659423A (en) * 1986-04-28 1987-04-21 International Business Machines Corporation Semiconductor crystal growth via variable melt rotation
JP2561072B2 (ja) * 1986-04-30 1996-12-04 東芝セラミツクス株式会社 単結晶の育成方法及びその装置
JP2556966B2 (ja) * 1986-04-30 1996-11-27 東芝セラミツクス株式会社 単結晶の育成装置
JPS645992A (en) * 1987-06-29 1989-01-10 Sony Corp Method for growing crystal
JP2651481B2 (ja) * 1987-09-21 1997-09-10 株式会社 半導体エネルギー研究所 超伝導材料の作製方法
JPH01282185A (ja) * 1988-05-09 1989-11-14 Nippon Telegr & Teleph Corp <Ntt> 結晶の育成方法
JPH0431386A (ja) * 1990-05-25 1992-02-03 Shin Etsu Handotai Co Ltd 半導体単結晶引上方法
JPH0442894A (ja) * 1990-06-07 1992-02-13 Shin Etsu Handotai Co Ltd シリコン単結晶の成長方法
JP2767074B2 (ja) * 1990-07-13 1998-06-18 信越半導体 株式会社 シリコン単結晶の引上方法
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
JP2734445B2 (ja) * 1996-04-16 1998-03-30 ソニー株式会社 結晶成長方法
JP4463957B2 (ja) * 2000-09-20 2010-05-19 信越半導体株式会社 シリコンウエーハの製造方法およびシリコンウエーハ
JP6680108B2 (ja) 2016-06-28 2020-04-15 株式会社Sumco シリコン単結晶の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3607139A (en) * 1968-05-02 1971-09-21 Air Reduction Single crystal growth and diameter control by magnetic melt agitation
GB2059932B (en) * 1979-09-20 1983-10-12 Sony Corp Solidification processes

Also Published As

Publication number Publication date
GB2109267A (en) 1983-06-02
GB2109267B (en) 1984-12-05
FR2515216B1 (fr) 1985-09-13
DE3239570C2 (de) 1993-11-18
JPS5874594A (ja) 1983-05-06
FR2515216A1 (fr) 1983-04-29
DE3239570A1 (de) 1983-05-05
JPH0244799B2 (ja) 1990-10-05
CA1223798A (en) 1987-07-07

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
BV The patent application has lapsed