NL8020365A - - Google Patents

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Info

Publication number: NL8020365A
Authority: NL; Netherlands
Prior art keywords: voltage; line; digit; circuit; digit line
Prior art date: 1980-02-06

Application number

NL8020365A

Other languages

English (en)

Dutch (nl)

Original Assignee

Mostek Corporation Te Carrollton, Texas, Ver. St. V. Am.

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-02-06

Filing date

1980-05-05

Publication date

1981-12-01

1980-05-05 Application filed by Mostek Corporation Te Carrollton, Texas, Ver. St. V. Am. filed Critical Mostek Corporation Te Carrollton, Texas, Ver. St. V. Am.

1981-12-01 Publication of NL8020365A publication Critical patent/NL8020365A/nl

Links

239000003990 capacitor Substances 0.000 claims description 24
238000000034 method Methods 0.000 claims description 21
239000004065 semiconductor Substances 0.000 claims description 14
230000004044 response Effects 0.000 claims description 8
230000001133 acceleration Effects 0.000 claims description 5
230000003213 activating effect Effects 0.000 claims description 5
230000004913 activation Effects 0.000 claims 1
238000007599 discharging Methods 0.000 claims 1
230000007704 transition Effects 0.000 description 6
230000008878 coupling Effects 0.000 description 4
238000010168 coupling process Methods 0.000 description 4
238000005859 coupling reaction Methods 0.000 description 4
230000008569 process Effects 0.000 description 3
230000009471 action Effects 0.000 description 2
230000008901 benefit Effects 0.000 description 2
230000008859 change Effects 0.000 description 2
230000000295 complement effect Effects 0.000 description 2
102100033213 Teneurin-1 Human genes 0.000 description 1
238000013500 data storage Methods 0.000 description 1
230000003111 delayed effect Effects 0.000 description 1
230000005669 field effect Effects 0.000 description 1
230000006870 function Effects 0.000 description 1
238000003754 machining Methods 0.000 description 1
229910044991 metal oxide Inorganic materials 0.000 description 1
150000004706 metal oxides Chemical class 0.000 description 1
230000011664 signaling Effects 0.000 description 1
108010063973 teneurin-1 Proteins 0.000 description 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Dram (AREA)
Read Only Memory (AREA)

NL8020365A 1980-02-06 1980-05-05 NL8020365A (it)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
US11929280		1980-02-06
US06/119,292 US4291392A (en)	1980-02-06	1980-02-06	Timing of active pullup for dynamic semiconductor memory
US8000506		1980-05-05
PCT/US1980/000506 WO1981002358A1 (en)	1980-02-06	1980-05-05	Timing of active pullup for dynamic semiconductor memory

Publications (1)

Publication Number	Publication Date
NL8020365A true NL8020365A (it)	1981-12-01

Family

ID=22383603

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL8020365A NL8020365A (it)	1980-02-06	1980-05-05

Country Status (8)

Country	Link
US (1)	US4291392A (it)
JP (1)	JPH0146951B2 (it)
CA (1)	CA1143838A (it)
DE (1)	DE3050253C2 (it)
FR (1)	FR2475269B1 (it)
GB (1)	GB2079557B (it)
NL (1)	NL8020365A (it)
WO (1)	WO1981002358A1 (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5730192A (en) *	1980-07-29	1982-02-18	Fujitsu Ltd	Sense amplifying circuit
US4451907A (en) *	1981-10-26	1984-05-29	Motorola, Inc.	Pull-up circuit for a memory
US4534017A (en) *	1981-10-29	1985-08-06	International Business Machines Corporation	FET Memory with drift reversal
US4542483A (en) *	1983-12-02	1985-09-17	At&T Bell Laboratories	Dual stage sense amplifier for dynamic random access memory
JPS62134894A (ja) *	1985-12-06	1987-06-17	Mitsubishi Electric Corp	半導体記憶装置
USRE34463E (en) *	1985-12-06	1993-11-30	Mitsubishi Denki Kabushiki Kaisha	Semiconductor memory device with active pull up
US4905265A (en) *	1985-12-11	1990-02-27	General Imaging Corporation	X-ray imaging system and solid state detector therefor
JPS62165787A (ja) *	1986-01-17	1987-07-22	Toshiba Corp	半導体記憶装置
US4901280A (en) *	1986-07-11	1990-02-13	Texas Instruments Incorporated	Pull-up circuit for high impedance word lines
JP2828630B2 (ja) *	1987-08-06	1998-11-25	三菱電機株式会社	半導体装置
US5113372A (en) *	1990-06-06	1992-05-12	Micron Technology, Inc.	Actively controlled transient reducing current supply and regulation circuits for random access memory integrated circuits
US5596200A (en) *	1992-10-14	1997-01-21	Primex	Low dose mammography system
US6034913A (en) *	1997-09-19	2000-03-07	Siemens Microelectronics, Inc.	Apparatus and method for high-speed wordline driving with low area overhead
KR100482766B1 (ko) *	2002-07-16	2005-04-14	주식회사 하이닉스반도체	메모리 소자의 컬럼 선택 제어 신호 발생 회로

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3765002A (en) *	1971-04-20	1973-10-09	Siemens Ag	Accelerated bit-line discharge of a mosfet memory
US3806898A (en) *	1973-06-29	1974-04-23	Ibm	Regeneration of dynamic monolithic memories
US3969706A (en) *	1974-10-08	1976-07-13	Mostek Corporation	Dynamic random access memory misfet integrated circuit
US3965460A (en) *	1975-01-02	1976-06-22	Motorola, Inc.	MOS speed-up circuit
DE2634089C3 (de) *	1975-08-11	1988-09-08	Nippon Telegraph And Telephone Corp., Tokio/Tokyo	Schaltungsanordnung zum Erfassen schwacher Signale
US4168490A (en) *	1978-06-26	1979-09-18	Fairchild Camera And Instrument Corporation	Addressable word line pull-down circuit

1980
- 1980-02-06 US US06/119,292 patent/US4291392A/en not_active Expired - Lifetime
- 1980-05-05 JP JP55502293A patent/JPH0146951B2/ja not_active Expired
- 1980-05-05 DE DE19803050253 patent/DE3050253C2/de not_active Expired
- 1980-05-05 GB GB8127979A patent/GB2079557B/en not_active Expired
- 1980-05-05 NL NL8020365A patent/NL8020365A/nl unknown
- 1980-05-05 WO PCT/US1980/000506 patent/WO1981002358A1/en active Application Filing
1981
- 1981-02-05 CA CA000370160A patent/CA1143838A/en not_active Expired
- 1981-02-05 FR FR818102243A patent/FR2475269B1/fr not_active Expired - Lifetime

Also Published As

Publication number	Publication date
CA1143838A (en)	1983-03-29
JPS57500177A (it)	1982-01-28
US4291392A (en)	1981-09-22
FR2475269B1 (fr)	1990-02-09
WO1981002358A1 (en)	1981-08-20
GB2079557A (en)	1982-01-20
JPH0146951B2 (it)	1989-10-11
DE3050253C2 (de)	1987-02-12
GB2079557B (en)	1983-06-15
DE3050253T1 (it)	1982-04-15
FR2475269A1 (fr)	1981-08-07

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