FR2475269B1 - Procede de synchronisation d'elevation de tension dans une memoire dynamique a semi-conducteur - Google Patents

Procede de synchronisation d'elevation de tension dans une memoire dynamique a semi-conducteur

Info

Publication number
FR2475269B1
FR2475269B1 FR818102243A FR8102243A FR2475269B1 FR 2475269 B1 FR2475269 B1 FR 2475269B1 FR 818102243 A FR818102243 A FR 818102243A FR 8102243 A FR8102243 A FR 8102243A FR 2475269 B1 FR2475269 B1 FR 2475269B1
Authority
FR
France
Prior art keywords
semiconductor memory
voltage rising
dynamic semiconductor
synchronizing voltage
synchronizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR818102243A
Other languages
English (en)
Other versions
FR2475269A1 (fr
Inventor
Robert James Proebsting
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CTU of Delaware Inc
Original Assignee
Mostek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mostek Corp filed Critical Mostek Corp
Publication of FR2475269A1 publication Critical patent/FR2475269A1/fr
Application granted granted Critical
Publication of FR2475269B1 publication Critical patent/FR2475269B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
FR818102243A 1980-02-06 1981-02-05 Procede de synchronisation d'elevation de tension dans une memoire dynamique a semi-conducteur Expired - Lifetime FR2475269B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/119,292 US4291392A (en) 1980-02-06 1980-02-06 Timing of active pullup for dynamic semiconductor memory

Publications (2)

Publication Number Publication Date
FR2475269A1 FR2475269A1 (fr) 1981-08-07
FR2475269B1 true FR2475269B1 (fr) 1990-02-09

Family

ID=22383603

Family Applications (1)

Application Number Title Priority Date Filing Date
FR818102243A Expired - Lifetime FR2475269B1 (fr) 1980-02-06 1981-02-05 Procede de synchronisation d'elevation de tension dans une memoire dynamique a semi-conducteur

Country Status (8)

Country Link
US (1) US4291392A (fr)
JP (1) JPH0146951B2 (fr)
CA (1) CA1143838A (fr)
DE (1) DE3050253C2 (fr)
FR (1) FR2475269B1 (fr)
GB (1) GB2079557B (fr)
NL (1) NL8020365A (fr)
WO (1) WO1981002358A1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730192A (en) * 1980-07-29 1982-02-18 Fujitsu Ltd Sense amplifying circuit
US4451907A (en) * 1981-10-26 1984-05-29 Motorola, Inc. Pull-up circuit for a memory
US4534017A (en) * 1981-10-29 1985-08-06 International Business Machines Corporation FET Memory with drift reversal
US4542483A (en) * 1983-12-02 1985-09-17 At&T Bell Laboratories Dual stage sense amplifier for dynamic random access memory
USRE34463E (en) * 1985-12-06 1993-11-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with active pull up
JPS62134894A (ja) * 1985-12-06 1987-06-17 Mitsubishi Electric Corp 半導体記憶装置
US4905265A (en) * 1985-12-11 1990-02-27 General Imaging Corporation X-ray imaging system and solid state detector therefor
JPS62165787A (ja) * 1986-01-17 1987-07-22 Toshiba Corp 半導体記憶装置
US4901280A (en) * 1986-07-11 1990-02-13 Texas Instruments Incorporated Pull-up circuit for high impedance word lines
JP2828630B2 (ja) * 1987-08-06 1998-11-25 三菱電機株式会社 半導体装置
US5113372A (en) * 1990-06-06 1992-05-12 Micron Technology, Inc. Actively controlled transient reducing current supply and regulation circuits for random access memory integrated circuits
US5596200A (en) * 1992-10-14 1997-01-21 Primex Low dose mammography system
US6034913A (en) * 1997-09-19 2000-03-07 Siemens Microelectronics, Inc. Apparatus and method for high-speed wordline driving with low area overhead
KR100482766B1 (ko) * 2002-07-16 2005-04-14 주식회사 하이닉스반도체 메모리 소자의 컬럼 선택 제어 신호 발생 회로

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3765002A (en) * 1971-04-20 1973-10-09 Siemens Ag Accelerated bit-line discharge of a mosfet memory
US3806898A (en) * 1973-06-29 1974-04-23 Ibm Regeneration of dynamic monolithic memories
US3969706A (en) * 1974-10-08 1976-07-13 Mostek Corporation Dynamic random access memory misfet integrated circuit
US3965460A (en) * 1975-01-02 1976-06-22 Motorola, Inc. MOS speed-up circuit
DE2634089B2 (de) * 1975-08-11 1978-01-05 Schaltungsanordnung zum erfassen schwacher signale
US4168490A (en) * 1978-06-26 1979-09-18 Fairchild Camera And Instrument Corporation Addressable word line pull-down circuit

Also Published As

Publication number Publication date
CA1143838A (fr) 1983-03-29
NL8020365A (fr) 1981-12-01
DE3050253T1 (fr) 1982-04-15
WO1981002358A1 (fr) 1981-08-20
DE3050253C2 (de) 1987-02-12
JPH0146951B2 (fr) 1989-10-11
JPS57500177A (fr) 1982-01-28
US4291392A (en) 1981-09-22
FR2475269A1 (fr) 1981-08-07
GB2079557A (en) 1982-01-20
GB2079557B (en) 1983-06-15

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Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
TP Transmission of property