NL193393B - Werkwijze voor de vervaardiging van een halfgeleiderinrichting. - Google Patents
Werkwijze voor de vervaardiging van een halfgeleiderinrichting.Info
- Publication number
- NL193393B NL193393B NL8502733A NL8502733A NL193393B NL 193393 B NL193393 B NL 193393B NL 8502733 A NL8502733 A NL 8502733A NL 8502733 A NL8502733 A NL 8502733A NL 193393 B NL193393 B NL 193393B
- Authority
- NL
- Netherlands
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/131—Reactive ion etching rie
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT2328384 | 1984-10-23 | ||
IT8423283A IT1213230B (it) | 1984-10-23 | 1984-10-23 | Processo planox a becco ridotto per la formazione di componenti elettronici integrati. |
Publications (3)
Publication Number | Publication Date |
---|---|
NL8502733A NL8502733A (nl) | 1986-05-16 |
NL193393B true NL193393B (nl) | 1999-04-01 |
NL193393C NL193393C (nl) | 1999-08-03 |
Family
ID=11205638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8502733A NL193393C (nl) | 1984-10-23 | 1985-10-07 | Werkwijze voor de vervaardiging van een halfgeleiderinrichting. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4897365A (nl) |
JP (1) | JPS61101047A (nl) |
DE (1) | DE3537047C2 (nl) |
FR (1) | FR2572217B1 (nl) |
GB (1) | GB2165992B (nl) |
IT (1) | IT1213230B (nl) |
NL (1) | NL193393C (nl) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5290396A (en) * | 1991-06-06 | 1994-03-01 | Lsi Logic Corporation | Trench planarization techniques |
US5413966A (en) * | 1990-12-20 | 1995-05-09 | Lsi Logic Corporation | Shallow trench etch |
US5248625A (en) * | 1991-06-06 | 1993-09-28 | Lsi Logic Corporation | Techniques for forming isolation structures |
US5252503A (en) * | 1991-06-06 | 1993-10-12 | Lsi Logic Corporation | Techniques for forming isolation structures |
US5225358A (en) * | 1991-06-06 | 1993-07-06 | Lsi Logic Corporation | Method of forming late isolation with polishing |
WO1996016437A1 (en) * | 1994-11-18 | 1996-05-30 | Advanced Micro Devices, Inc. | Silicon nitride etch process with critical dimension gain |
US5983828A (en) * | 1995-10-13 | 1999-11-16 | Mattson Technology, Inc. | Apparatus and method for pulsed plasma processing of a semiconductor substrate |
US6794301B2 (en) | 1995-10-13 | 2004-09-21 | Mattson Technology, Inc. | Pulsed plasma processing of semiconductor substrates |
US6253704B1 (en) | 1995-10-13 | 2001-07-03 | Mattson Technology, Inc. | Apparatus and method for pulsed plasma processing of a semiconductor substrate |
US5861339A (en) * | 1995-10-27 | 1999-01-19 | Integrated Device Technology, Inc. | Recessed isolation with double oxidation |
US5882993A (en) | 1996-08-19 | 1999-03-16 | Advanced Micro Devices, Inc. | Integrated circuit with differing gate oxide thickness and process for making same |
US6033943A (en) * | 1996-08-23 | 2000-03-07 | Advanced Micro Devices, Inc. | Dual gate oxide thickness integrated circuit and process for making same |
KR19980064466A (ko) * | 1996-12-23 | 1998-10-07 | 윌리엄비.켐플러 | 이산화탄소로 실리콘 산화물을 에칭하는 공정 |
US5926730A (en) * | 1997-02-19 | 1999-07-20 | Micron Technology, Inc. | Conductor layer nitridation |
US5962914A (en) * | 1998-01-14 | 1999-10-05 | Advanced Micro Devices, Inc. | Reduced bird's beak field oxidation process using nitrogen implanted into active region |
JPH11214355A (ja) * | 1998-01-20 | 1999-08-06 | Nec Corp | 異方性ドライエッチング方法 |
US6531364B1 (en) | 1998-08-05 | 2003-03-11 | Advanced Micro Devices, Inc. | Advanced fabrication technique to form ultra thin gate dielectric using a sacrificial polysilicon seed layer |
US20050287916A1 (en) * | 2004-01-23 | 2005-12-29 | Sheltman David A | Pneumatically actuated stunt device |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4080718A (en) * | 1976-12-14 | 1978-03-28 | Smc Standard Microsystems Corporation | Method of modifying electrical characteristics of MOS devices using ion implantation |
US4283249A (en) * | 1979-05-02 | 1981-08-11 | International Business Machines Corporation | Reactive ion etching |
JPS5691446A (en) * | 1979-12-25 | 1981-07-24 | Seiko Epson Corp | Forming of element segregation region of semiconductor integrated circuit |
JPS56114319A (en) * | 1980-02-14 | 1981-09-08 | Fujitsu Ltd | Method for forming contact hole |
DE3165961D1 (en) * | 1980-05-12 | 1984-10-18 | Fujitsu Ltd | Method and apparatus for plasma etching |
JPS56158873A (en) * | 1980-05-14 | 1981-12-07 | Hitachi Ltd | Dry etching method |
US4324611A (en) * | 1980-06-26 | 1982-04-13 | Branson International Plasma Corporation | Process and gas mixture for etching silicon dioxide and silicon nitride |
NL8004005A (nl) * | 1980-07-11 | 1982-02-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
JPS5775429A (en) * | 1980-10-28 | 1982-05-12 | Toshiba Corp | Manufacture of semiconductor device |
US4330931A (en) * | 1981-02-03 | 1982-05-25 | Intel Corporation | Process for forming metal plated regions and lines in MOS circuits |
US4454647A (en) * | 1981-08-27 | 1984-06-19 | International Business Machines Corporation | Isolation for high density integrated circuits |
US4376672A (en) * | 1981-10-26 | 1983-03-15 | Applied Materials, Inc. | Materials and methods for plasma etching of oxides and nitrides of silicon |
US4563227A (en) * | 1981-12-08 | 1986-01-07 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing a semiconductor device |
US4484979A (en) * | 1984-04-16 | 1984-11-27 | At&T Bell Laboratories | Two-step anisotropic etching process for patterning a layer without penetrating through an underlying thinner layer |
US4551910A (en) * | 1984-11-27 | 1985-11-12 | Intel Corporation | MOS Isolation processing |
-
1984
- 1984-10-23 IT IT8423283A patent/IT1213230B/it active
-
1985
- 1985-09-30 GB GB08524041A patent/GB2165992B/en not_active Expired
- 1985-10-07 NL NL8502733A patent/NL193393C/nl not_active IP Right Cessation
- 1985-10-17 DE DE3537047A patent/DE3537047C2/de not_active Expired - Fee Related
- 1985-10-22 JP JP60234661A patent/JPS61101047A/ja active Pending
- 1985-10-23 FR FR858515760A patent/FR2572217B1/fr not_active Expired - Lifetime
-
1987
- 1987-11-23 US US07/124,440 patent/US4897365A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE3537047A1 (de) | 1986-04-24 |
GB8524041D0 (en) | 1985-11-06 |
NL8502733A (nl) | 1986-05-16 |
GB2165992B (en) | 1988-11-09 |
FR2572217A1 (fr) | 1986-04-25 |
DE3537047C2 (de) | 1995-06-01 |
IT1213230B (it) | 1989-12-14 |
GB2165992A (en) | 1986-04-23 |
US4897365A (en) | 1990-01-30 |
FR2572217B1 (fr) | 1990-03-30 |
JPS61101047A (ja) | 1986-05-19 |
IT8423283A0 (it) | 1984-10-23 |
NL193393C (nl) | 1999-08-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20030501 |