NL186662C - Werkwijze ter vervaardiging van een halfgeleiderinrichting. - Google Patents
Werkwijze ter vervaardiging van een halfgeleiderinrichting.Info
- Publication number
- NL186662C NL186662C NLAANVRAGE8002492,A NL8002492A NL186662C NL 186662 C NL186662 C NL 186662C NL 8002492 A NL8002492 A NL 8002492A NL 186662 C NL186662 C NL 186662C
- Authority
- NL
- Netherlands
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE8002492,A NL186662C (nl) | 1980-04-29 | 1980-04-29 | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
GB8111623A GB2075257B (en) | 1980-04-29 | 1981-04-13 | Semiconductor device manufacture |
CA000376122A CA1165012A (en) | 1980-04-29 | 1981-04-23 | Method of manufacturing a semiconductor device |
DE3116268A DE3116268C2 (de) | 1980-04-29 | 1981-04-24 | Verfahren zur Herstellung einer Halbleiteranordnung |
US06/257,672 US4466171A (en) | 1980-04-29 | 1981-04-24 | Method of manufacturing a semiconductor device utilizing outdiffusion to convert an epitaxial layer |
IT21369/81A IT1137566B (it) | 1980-04-29 | 1981-04-24 | Metodo di fabbricazione di un dispositivo semiconduttore |
CH2735/81A CH655202A5 (de) | 1980-04-29 | 1981-04-27 | Verfahren zur herstellung einer halbleiteranordnung. |
FR8108317A FR2481518A1 (fr) | 1980-04-29 | 1981-04-27 | Procede de realisation d'un dispositif semiconducteur comportant des transistors a effet de champ complementaires |
IE936/81A IE51323B1 (en) | 1980-04-29 | 1981-04-27 | Method of manufacturing a semiconductor device |
AU69875/81A AU544817B2 (en) | 1980-04-29 | 1981-04-27 | Diffusion from buried to epitaxial layer |
JP6616481A JPS571260A (en) | 1980-04-29 | 1981-04-30 | Semiconductor device and method of manufacturing same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8002492 | 1980-04-29 | ||
NLAANVRAGE8002492,A NL186662C (nl) | 1980-04-29 | 1980-04-29 | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
Publications (3)
Publication Number | Publication Date |
---|---|
NL8002492A NL8002492A (nl) | 1981-12-01 |
NL186662B NL186662B (nl) | 1990-08-16 |
NL186662C true NL186662C (nl) | 1992-03-16 |
Family
ID=19835227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE8002492,A NL186662C (nl) | 1980-04-29 | 1980-04-29 | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
Country Status (11)
Country | Link |
---|---|
US (1) | US4466171A (nl) |
JP (1) | JPS571260A (nl) |
AU (1) | AU544817B2 (nl) |
CA (1) | CA1165012A (nl) |
CH (1) | CH655202A5 (nl) |
DE (1) | DE3116268C2 (nl) |
FR (1) | FR2481518A1 (nl) |
GB (1) | GB2075257B (nl) |
IE (1) | IE51323B1 (nl) |
IT (1) | IT1137566B (nl) |
NL (1) | NL186662C (nl) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8104862A (nl) * | 1981-10-28 | 1983-05-16 | Philips Nv | Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan. |
DE3149185A1 (de) * | 1981-12-11 | 1983-06-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung benachbarter mit dotierstoffionen implantierter wannen bei der herstellung von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen |
JPS5994861A (ja) * | 1982-11-24 | 1984-05-31 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
NL188923C (nl) * | 1983-07-05 | 1992-11-02 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
US4683488A (en) * | 1984-03-29 | 1987-07-28 | Hughes Aircraft Company | Latch-up resistant CMOS structure for VLSI including retrograded wells |
US4554726A (en) * | 1984-04-17 | 1985-11-26 | At&T Bell Laboratories | CMOS Integrated circuit technology utilizing dual implantation of slow and fast diffusing donor ions to form the n-well |
US4727044A (en) | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
US4677739A (en) * | 1984-11-29 | 1987-07-07 | Texas Instruments Incorporated | High density CMOS integrated circuit manufacturing process |
US4578128A (en) * | 1984-12-03 | 1986-03-25 | Ncr Corporation | Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants |
JPH0648716B2 (ja) * | 1985-11-30 | 1994-06-22 | ヤマハ株式会社 | 集積回路装置の製法 |
EP0248988B1 (de) * | 1986-06-10 | 1990-10-31 | Siemens Aktiengesellschaft | Verfahren zum Herstellen von hochintegrierten komplementären MOS-Feldeffekttransistorschaltungen |
US4743563A (en) * | 1987-05-26 | 1988-05-10 | Motorola, Inc. | Process of controlling surface doping |
US4728619A (en) * | 1987-06-19 | 1988-03-01 | Motorola, Inc. | Field implant process for CMOS using germanium |
JPH01161752A (ja) * | 1987-12-18 | 1989-06-26 | Toshiba Corp | 半導体装置製造方法 |
US4925806A (en) * | 1988-03-17 | 1990-05-15 | Northern Telecom Limited | Method for making a doped well in a semiconductor substrate |
US5181094A (en) * | 1988-09-29 | 1993-01-19 | Mitsubishi Denki Kabushiki Kaisha | Complementary semiconductor device having improved device isolating region |
US5454258A (en) * | 1994-05-09 | 1995-10-03 | Olin Corporation | Broad range moisture analyzer and method |
US5556796A (en) * | 1995-04-25 | 1996-09-17 | Micrel, Inc. | Self-alignment technique for forming junction isolation and wells |
JP4677166B2 (ja) * | 2002-06-27 | 2011-04-27 | 三洋電機株式会社 | 半導体装置及びその製造方法 |
WO2005103172A2 (en) * | 2004-04-15 | 2005-11-03 | Avery Dennison Corporation | Dew resistant coatings |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3928091A (en) * | 1971-09-27 | 1975-12-23 | Hitachi Ltd | Method for manufacturing a semiconductor device utilizing selective oxidation |
US3865654A (en) * | 1972-11-01 | 1975-02-11 | Ibm | Complementary field effect transistor having p doped silicon gates and process for making the same |
US3793088A (en) * | 1972-11-15 | 1974-02-19 | Bell Telephone Labor Inc | Compatible pnp and npn devices in an integrated circuit |
US4099998A (en) * | 1975-11-03 | 1978-07-11 | General Electric Company | Method of making zener diodes with selectively variable breakdown voltages |
JPS5286083A (en) * | 1976-01-12 | 1977-07-16 | Hitachi Ltd | Production of complimentary isolation gate field effect transistor |
JPS5370679A (en) * | 1976-12-06 | 1978-06-23 | Nippon Gakki Seizo Kk | Transistor |
JPS5413779A (en) * | 1977-07-04 | 1979-02-01 | Toshiba Corp | Semiconductor integrated circuit device |
US4151010A (en) * | 1978-06-30 | 1979-04-24 | International Business Machines Corporation | Forming adjacent impurity regions in a semiconductor by oxide masking |
US4168997A (en) * | 1978-10-10 | 1979-09-25 | National Semiconductor Corporation | Method for making integrated circuit transistors with isolation and substrate connected collectors utilizing simultaneous outdiffusion to convert an epitaxial layer |
US4373253A (en) * | 1981-04-13 | 1983-02-15 | National Semiconductor Corporation | Integrated CMOS process with JFET |
-
1980
- 1980-04-29 NL NLAANVRAGE8002492,A patent/NL186662C/nl not_active IP Right Cessation
-
1981
- 1981-04-13 GB GB8111623A patent/GB2075257B/en not_active Expired
- 1981-04-23 CA CA000376122A patent/CA1165012A/en not_active Expired
- 1981-04-24 US US06/257,672 patent/US4466171A/en not_active Expired - Lifetime
- 1981-04-24 IT IT21369/81A patent/IT1137566B/it active
- 1981-04-24 DE DE3116268A patent/DE3116268C2/de not_active Expired
- 1981-04-27 CH CH2735/81A patent/CH655202A5/de not_active IP Right Cessation
- 1981-04-27 FR FR8108317A patent/FR2481518A1/fr active Granted
- 1981-04-27 IE IE936/81A patent/IE51323B1/en not_active IP Right Cessation
- 1981-04-27 AU AU69875/81A patent/AU544817B2/en not_active Ceased
- 1981-04-30 JP JP6616481A patent/JPS571260A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
NL8002492A (nl) | 1981-12-01 |
IE51323B1 (en) | 1986-12-10 |
US4466171A (en) | 1984-08-21 |
NL186662B (nl) | 1990-08-16 |
IE810936L (en) | 1981-10-29 |
DE3116268C2 (de) | 1986-03-20 |
IT8121369A1 (it) | 1982-10-24 |
IT8121369A0 (it) | 1981-04-24 |
GB2075257A (en) | 1981-11-11 |
CA1165012A (en) | 1984-04-03 |
GB2075257B (en) | 1984-06-06 |
CH655202A5 (de) | 1986-03-27 |
FR2481518B1 (nl) | 1984-11-09 |
AU544817B2 (en) | 1985-06-13 |
DE3116268A1 (de) | 1982-05-19 |
IT1137566B (it) | 1986-09-10 |
AU6987581A (en) | 1981-11-05 |
JPS571260A (en) | 1982-01-06 |
FR2481518A1 (fr) | 1981-10-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1B | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
R1VN | Request for mentioning name(s) of the inventor(s) in the patent or request for changing the name(s) of inventor(s) with respec | ||
NP1 | Patent granted (not automatically) | ||
V1 | Lapsed because of non-payment of the annual fee |