FR2422259A1 - Dispositif semiconducteur muni d'un circuit du genre darlington - Google Patents
Dispositif semiconducteur muni d'un circuit du genre darlingtonInfo
- Publication number
- FR2422259A1 FR2422259A1 FR7908230A FR7908230A FR2422259A1 FR 2422259 A1 FR2422259 A1 FR 2422259A1 FR 7908230 A FR7908230 A FR 7908230A FR 7908230 A FR7908230 A FR 7908230A FR 2422259 A1 FR2422259 A1 FR 2422259A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- darlington
- diode
- device equipped
- type circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
Dans un circuit Darlington présentant une diode accélératrice, l'effet parasite fatal de la structure à quatre couches (pnpn) est éliminé par le choix d'une configuration divisée de la diode. La largeur des régions partielles est choisie si petite que la jonction pn court-circuitée entre la cathode de la diode et la base du transistor de commande ne puisse également pas ou guère être polarisée dans la partie interne dans le sens direct. Application : dispositif semiconducteur.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE7803706,A NL184185C (nl) | 1978-04-07 | 1978-04-07 | Darlingtonschakeling met een geintegreerde halfgeleiderdiode. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2422259A1 true FR2422259A1 (fr) | 1979-11-02 |
FR2422259B1 FR2422259B1 (fr) | 1983-01-07 |
Family
ID=19830612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7908230A Granted FR2422259A1 (fr) | 1978-04-07 | 1979-04-02 | Dispositif semiconducteur muni d'un circuit du genre darlington |
Country Status (9)
Country | Link |
---|---|
US (1) | US4288807A (fr) |
JP (1) | JPS54137284A (fr) |
AU (1) | AU4580279A (fr) |
DE (1) | DE2913536C2 (fr) |
FR (1) | FR2422259A1 (fr) |
GB (1) | GB2018511B (fr) |
IT (1) | IT1111929B (fr) |
NL (1) | NL184185C (fr) |
SE (1) | SE7902980L (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2493603A1 (fr) * | 1980-11-03 | 1982-05-07 | Philips Nv | Dispositif semiconducteur |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2449333A1 (fr) * | 1979-02-14 | 1980-09-12 | Radiotechnique Compelec | Perfectionnement aux dispositifs semi-conducteurs de type darlington |
JPS60777B2 (ja) * | 1979-05-25 | 1985-01-10 | 株式会社東芝 | Mos半導体集積回路 |
JPS5799771A (en) * | 1980-12-12 | 1982-06-21 | Hitachi Ltd | Semiconductor device |
US4486770A (en) * | 1981-04-27 | 1984-12-04 | General Motors Corporation | Isolated integrated circuit transistor with transient protection |
DE3331631A1 (de) * | 1982-09-01 | 1984-03-01 | Mitsubishi Denki K.K., Tokyo | Halbleiter-bauelement |
JPS5987157U (ja) * | 1982-12-01 | 1984-06-13 | 株式会社三社電機製作所 | ダ−リントントランジスタ |
JPS59110166A (ja) * | 1982-12-15 | 1984-06-26 | Sansha Electric Mfg Co Ltd | ダ−リントントランジスタ |
US4783694A (en) * | 1984-03-16 | 1988-11-08 | Motorola Inc. | Integrated bipolar-MOS semiconductor device with common collector and drain |
US4887144A (en) * | 1985-07-26 | 1989-12-12 | Texas Instruments Incorporated | Topside substrate contact in a trenched semiconductor structure and method of fabrication |
GB2183907B (en) * | 1985-11-27 | 1989-10-04 | Raytheon Co | Semiconductor device |
US4936928A (en) * | 1985-11-27 | 1990-06-26 | Raytheon Company | Semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3913213A (en) * | 1974-08-02 | 1975-10-21 | Trw Inc | Integrated circuit transistor switch |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52149666U (fr) * | 1976-05-11 | 1977-11-12 |
-
1978
- 1978-04-07 NL NLAANVRAGE7803706,A patent/NL184185C/xx not_active IP Right Cessation
-
1979
- 1979-03-28 US US06/024,750 patent/US4288807A/en not_active Expired - Lifetime
- 1979-04-02 FR FR7908230A patent/FR2422259A1/fr active Granted
- 1979-04-04 DE DE2913536A patent/DE2913536C2/de not_active Expired
- 1979-04-04 AU AU45802/79A patent/AU4580279A/en not_active Abandoned
- 1979-04-04 IT IT21595/79A patent/IT1111929B/it active
- 1979-04-04 SE SE7902980A patent/SE7902980L/xx unknown
- 1979-04-04 GB GB7911734A patent/GB2018511B/en not_active Expired
- 1979-04-07 JP JP4242379A patent/JPS54137284A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3913213A (en) * | 1974-08-02 | 1975-10-21 | Trw Inc | Integrated circuit transistor switch |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2493603A1 (fr) * | 1980-11-03 | 1982-05-07 | Philips Nv | Dispositif semiconducteur |
Also Published As
Publication number | Publication date |
---|---|
JPS575061B2 (fr) | 1982-01-28 |
IT1111929B (it) | 1986-01-13 |
AU4580279A (en) | 1979-10-11 |
IT7921595A0 (it) | 1979-04-04 |
GB2018511A (en) | 1979-10-17 |
NL184185C (nl) | 1989-05-01 |
SE7902980L (sv) | 1979-10-08 |
JPS54137284A (en) | 1979-10-24 |
FR2422259B1 (fr) | 1983-01-07 |
DE2913536C2 (de) | 1982-12-09 |
NL7803706A (nl) | 1979-10-09 |
DE2913536A1 (de) | 1979-10-18 |
GB2018511B (en) | 1982-04-28 |
NL184185B (nl) | 1988-12-01 |
US4288807A (en) | 1981-09-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |