FR2422259A1 - Dispositif semiconducteur muni d'un circuit du genre darlington - Google Patents

Dispositif semiconducteur muni d'un circuit du genre darlington

Info

Publication number
FR2422259A1
FR2422259A1 FR7908230A FR7908230A FR2422259A1 FR 2422259 A1 FR2422259 A1 FR 2422259A1 FR 7908230 A FR7908230 A FR 7908230A FR 7908230 A FR7908230 A FR 7908230A FR 2422259 A1 FR2422259 A1 FR 2422259A1
Authority
FR
France
Prior art keywords
semiconductor device
darlington
diode
device equipped
type circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7908230A
Other languages
English (en)
Other versions
FR2422259B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2422259A1 publication Critical patent/FR2422259A1/fr
Application granted granted Critical
Publication of FR2422259B1 publication Critical patent/FR2422259B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

Dans un circuit Darlington présentant une diode accélératrice, l'effet parasite fatal de la structure à quatre couches (pnpn) est éliminé par le choix d'une configuration divisée de la diode. La largeur des régions partielles est choisie si petite que la jonction pn court-circuitée entre la cathode de la diode et la base du transistor de commande ne puisse également pas ou guère être polarisée dans la partie interne dans le sens direct. Application : dispositif semiconducteur.
FR7908230A 1978-04-07 1979-04-02 Dispositif semiconducteur muni d'un circuit du genre darlington Granted FR2422259A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7803706,A NL184185C (nl) 1978-04-07 1978-04-07 Darlingtonschakeling met een geintegreerde halfgeleiderdiode.

Publications (2)

Publication Number Publication Date
FR2422259A1 true FR2422259A1 (fr) 1979-11-02
FR2422259B1 FR2422259B1 (fr) 1983-01-07

Family

ID=19830612

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7908230A Granted FR2422259A1 (fr) 1978-04-07 1979-04-02 Dispositif semiconducteur muni d'un circuit du genre darlington

Country Status (9)

Country Link
US (1) US4288807A (fr)
JP (1) JPS54137284A (fr)
AU (1) AU4580279A (fr)
DE (1) DE2913536C2 (fr)
FR (1) FR2422259A1 (fr)
GB (1) GB2018511B (fr)
IT (1) IT1111929B (fr)
NL (1) NL184185C (fr)
SE (1) SE7902980L (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2493603A1 (fr) * 1980-11-03 1982-05-07 Philips Nv Dispositif semiconducteur

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2449333A1 (fr) * 1979-02-14 1980-09-12 Radiotechnique Compelec Perfectionnement aux dispositifs semi-conducteurs de type darlington
JPS60777B2 (ja) * 1979-05-25 1985-01-10 株式会社東芝 Ｍｏｓ半導体集積回路
JPS5799771A (en) * 1980-12-12 1982-06-21 Hitachi Ltd Semiconductor device
US4486770A (en) * 1981-04-27 1984-12-04 General Motors Corporation Isolated integrated circuit transistor with transient protection
DE3331631A1 (de) * 1982-09-01 1984-03-01 Mitsubishi Denki K.K., Tokyo Halbleiter-bauelement
JPS5987157U (ja) * 1982-12-01 1984-06-13 株式会社三社電機製作所 ダ−リントントランジスタ
JPS59110166A (ja) * 1982-12-15 1984-06-26 Sansha Electric Mfg Co Ltd ダ−リントントランジスタ
US4783694A (en) * 1984-03-16 1988-11-08 Motorola Inc. Integrated bipolar-MOS semiconductor device with common collector and drain
US4887144A (en) * 1985-07-26 1989-12-12 Texas Instruments Incorporated Topside substrate contact in a trenched semiconductor structure and method of fabrication
GB2183907B (en) * 1985-11-27 1989-10-04 Raytheon Co Semiconductor device
US4936928A (en) * 1985-11-27 1990-06-26 Raytheon Company Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3913213A (en) * 1974-08-02 1975-10-21 Trw Inc Integrated circuit transistor switch

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149666U (fr) * 1976-05-11 1977-11-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3913213A (en) * 1974-08-02 1975-10-21 Trw Inc Integrated circuit transistor switch

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2493603A1 (fr) * 1980-11-03 1982-05-07 Philips Nv Dispositif semiconducteur

Also Published As

Publication number Publication date
JPS575061B2 (fr) 1982-01-28
IT1111929B (it) 1986-01-13
AU4580279A (en) 1979-10-11
IT7921595A0 (it) 1979-04-04
GB2018511A (en) 1979-10-17
NL184185C (nl) 1989-05-01
SE7902980L (sv) 1979-10-08
JPS54137284A (en) 1979-10-24
FR2422259B1 (fr) 1983-01-07
DE2913536C2 (de) 1982-12-09
NL7803706A (nl) 1979-10-09
DE2913536A1 (de) 1979-10-18
GB2018511B (en) 1982-04-28
NL184185B (nl) 1988-12-01
US4288807A (en) 1981-09-08

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Legal Events

Date Code Title Description
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