NL151538B - SWITCH AND MEMORY ELEMENT. - Google Patents

SWITCH AND MEMORY ELEMENT.

Info

Publication number
NL151538B
NL151538B NL707012435A NL7012435A NL151538B NL 151538 B NL151538 B NL 151538B NL 707012435 A NL707012435 A NL 707012435A NL 7012435 A NL7012435 A NL 7012435A NL 151538 B NL151538 B NL 151538B
Authority
NL
Netherlands
Prior art keywords
switch
memory element
memory
Prior art date
Application number
NL707012435A
Other languages
Dutch (nl)
Other versions
NL7012435A (en
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of NL7012435A publication Critical patent/NL7012435A/xx
Publication of NL151538B publication Critical patent/NL151538B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
NL707012435A 1969-08-21 1970-08-21 SWITCH AND MEMORY ELEMENT. NL151538B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44066982A JPS492950B1 (en) 1969-08-21 1969-08-21

Publications (2)

Publication Number Publication Date
NL7012435A NL7012435A (en) 1971-02-23
NL151538B true NL151538B (en) 1976-11-15

Family

ID=13331720

Family Applications (2)

Application Number Title Priority Date Filing Date
NL707012436A NL151539B (en) 1969-08-21 1970-08-21 SWITCH AND MEMORY ELEMENT.
NL707012435A NL151538B (en) 1969-08-21 1970-08-21 SWITCH AND MEMORY ELEMENT.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL707012436A NL151539B (en) 1969-08-21 1970-08-21 SWITCH AND MEMORY ELEMENT.

Country Status (5)

Country Link
JP (1) JPS492950B1 (en)
DE (2) DE2042099C3 (en)
FR (2) FR2063139B1 (en)
GB (2) GB1324416A (en)
NL (2) NL151539B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE795843A (en) * 1972-02-25 1973-08-23 Storry Smithson & Co Ltd IMPROVEMENTS RELATING TO A CATHODIC PROTECTION SYSTEM
CH557081A (en) * 1972-12-22 1974-12-13 Ibm BISTABLE RESISTANCE WITH CONDITIONS INDEPENDENT OF THE EXTERNAL ENERGY SUPPLY.
DE3245589A1 (en) * 1982-12-09 1984-06-14 Hoechst Ag, 6230 Frankfurt UNCROSSLINKABLE, ELECTRICALLY CONDUCTIVE MOLDING MATERIALS BASED ON THERMOPLASTIC PLASTICS AND CARBON
US4977357A (en) * 1988-01-11 1990-12-11 Shrier Karen P Overvoltage protection device and material
US4992333A (en) * 1988-11-18 1991-02-12 G&H Technology, Inc. Electrical overstress pulse protection
AU2002314496A1 (en) * 2001-06-20 2003-01-02 Citala Ltd. Thin planar switches and their applications

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3359521A (en) * 1965-10-26 1967-12-19 Cognitronics Corp Bistable resistance memory device

Also Published As

Publication number Publication date
FR2063139B1 (en) 1974-06-14
DE2042099B2 (en) 1974-05-22
NL151539B (en) 1976-11-15
NL7012435A (en) 1971-02-23
DE2042111B2 (en) 1972-07-20
FR2058109A5 (en) 1971-05-21
DE2042111A1 (en) 1971-04-22
DE2042099A1 (en) 1971-05-13
DE2042099C3 (en) 1975-01-02
JPS492950B1 (en) 1974-01-23
GB1324417A (en) 1973-07-25
DE2042111C3 (en) 1975-05-22
FR2063139A1 (en) 1971-07-09
NL7012436A (en) 1971-02-23
GB1324416A (en) 1973-07-25

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Legal Events

Date Code Title Description
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: MATSUSHITA

V4 Discontinued because of reaching the maximum lifetime of a patent