FR2063139B1 - - Google Patents

Info

Publication number
FR2063139B1
FR2063139B1 FR707030054A FR7030054A FR2063139B1 FR 2063139 B1 FR2063139 B1 FR 2063139B1 FR 707030054 A FR707030054 A FR 707030054A FR 7030054 A FR7030054 A FR 7030054A FR 2063139 B1 FR2063139 B1 FR 2063139B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR707030054A
Other versions
FR2063139A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of FR2063139A1 publication Critical patent/FR2063139A1/fr
Application granted granted Critical
Publication of FR2063139B1 publication Critical patent/FR2063139B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
FR707030054A 1969-08-21 1970-08-14 Expired FR2063139B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44066982A JPS492950B1 (fr) 1969-08-21 1969-08-21

Publications (2)

Publication Number Publication Date
FR2063139A1 FR2063139A1 (fr) 1971-07-09
FR2063139B1 true FR2063139B1 (fr) 1974-06-14

Family

ID=13331720

Family Applications (2)

Application Number Title Priority Date Filing Date
FR707030054A Expired FR2063139B1 (fr) 1969-08-21 1970-08-14
FR7030053A Expired FR2058109A5 (fr) 1969-08-21 1970-08-14

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR7030053A Expired FR2058109A5 (fr) 1969-08-21 1970-08-14

Country Status (5)

Country Link
JP (1) JPS492950B1 (fr)
DE (2) DE2042099C3 (fr)
FR (2) FR2063139B1 (fr)
GB (2) GB1324416A (fr)
NL (2) NL151539B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE795843A (fr) * 1972-02-25 1973-08-23 Storry Smithson & Co Ltd Perfectionnements relatifs a un systeme de protection cathodique
CH557081A (de) * 1972-12-22 1974-12-13 Ibm Bistabiler widerstand mit von aeusserer energiezufuhr unabhaengigen zustaenden.
DE3245589A1 (de) * 1982-12-09 1984-06-14 Hoechst Ag, 6230 Frankfurt Unvernetzbare, elektrisch leitfaehige formmassen auf der basis von thermoplastischen kunststoffen und russ
US4977357A (en) * 1988-01-11 1990-12-11 Shrier Karen P Overvoltage protection device and material
US4992333A (en) * 1988-11-18 1991-02-12 G&H Technology, Inc. Electrical overstress pulse protection
JP2005516378A (ja) * 2001-06-20 2005-06-02 シタラ リミティド 薄い平面型スイッチおよびその用途

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3359521A (en) * 1965-10-26 1967-12-19 Cognitronics Corp Bistable resistance memory device

Also Published As

Publication number Publication date
NL7012436A (fr) 1971-02-23
GB1324416A (en) 1973-07-25
JPS492950B1 (fr) 1974-01-23
NL7012435A (fr) 1971-02-23
DE2042099A1 (de) 1971-05-13
FR2063139A1 (fr) 1971-07-09
DE2042099B2 (de) 1974-05-22
NL151538B (nl) 1976-11-15
NL151539B (nl) 1976-11-15
GB1324417A (en) 1973-07-25
DE2042111A1 (de) 1971-04-22
DE2042111B2 (de) 1972-07-20
DE2042111C3 (de) 1975-05-22
FR2058109A5 (fr) 1971-05-21
DE2042099C3 (de) 1975-01-02

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