GB1324417A - Process of switching electrical current - Google Patents

Process of switching electrical current

Info

Publication number
GB1324417A
GB1324417A GB4014670A GB4014670A GB1324417A GB 1324417 A GB1324417 A GB 1324417A GB 4014670 A GB4014670 A GB 4014670A GB 4014670 A GB4014670 A GB 4014670A GB 1324417 A GB1324417 A GB 1324417A
Authority
GB
United Kingdom
Prior art keywords
resistance state
voltage
current
low resistance
reduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4014670A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1324417A publication Critical patent/GB1324417A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials

Abstract

1324417 Semi-conductor devices MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 20 Aug 1970 [21 Aug 1969] 40146/70 Heading H1K A current switching element comprises a disc body composed of finely divided conductive particles disposed in a synthetic resin (Fig. 4, not shown), with electrodes disposed on opposite or on the same sides (Figs. 1, 2, not shown), having a high and a low resistance state, wherein increasing voltage is applied to the device in its high resistance state (Fig. 3) and current increases ohmically until a critical value is reached. The device then changes over to a low resistance state and current again increases ohmically with voltage. Reduction of voltage to point 21 causes changeover to the high resistance state and further reduction of voltage produces ohmic reduction of current to zero. The cycle may be repeated, and the device may receive a bias less than the first and greater than the second critical voltage so that a pulse of amplitude exceeding the first critical voltage initiates rapid changeover to the low resistance state until a similar negative pulse produces restoration of the high resistance state. The composition of the element is similar to that of Specification 1,324,416.
GB4014670A 1969-08-21 1970-08-20 Process of switching electrical current Expired GB1324417A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44066982A JPS492950B1 (en) 1969-08-21 1969-08-21

Publications (1)

Publication Number Publication Date
GB1324417A true GB1324417A (en) 1973-07-25

Family

ID=13331720

Family Applications (2)

Application Number Title Priority Date Filing Date
GB4014570A Expired GB1324416A (en) 1969-08-21 1970-08-20 Electric memory or storage device
GB4014670A Expired GB1324417A (en) 1969-08-21 1970-08-20 Process of switching electrical current

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB4014570A Expired GB1324416A (en) 1969-08-21 1970-08-20 Electric memory or storage device

Country Status (5)

Country Link
JP (1) JPS492950B1 (en)
DE (2) DE2042099C3 (en)
FR (2) FR2063139B1 (en)
GB (2) GB1324416A (en)
NL (2) NL151539B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE795843A (en) * 1972-02-25 1973-08-23 Storry Smithson & Co Ltd IMPROVEMENTS RELATING TO A CATHODIC PROTECTION SYSTEM
CH557081A (en) * 1972-12-22 1974-12-13 Ibm BISTABLE RESISTANCE WITH CONDITIONS INDEPENDENT OF THE EXTERNAL ENERGY SUPPLY.
DE3245589A1 (en) * 1982-12-09 1984-06-14 Hoechst Ag, 6230 Frankfurt UNCROSSLINKABLE, ELECTRICALLY CONDUCTIVE MOLDING MATERIALS BASED ON THERMOPLASTIC PLASTICS AND CARBON
US4977357A (en) * 1988-01-11 1990-12-11 Shrier Karen P Overvoltage protection device and material
US4992333A (en) * 1988-11-18 1991-02-12 G&H Technology, Inc. Electrical overstress pulse protection
AU2002314496A1 (en) * 2001-06-20 2003-01-02 Citala Ltd. Thin planar switches and their applications

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3359521A (en) * 1965-10-26 1967-12-19 Cognitronics Corp Bistable resistance memory device

Also Published As

Publication number Publication date
FR2063139B1 (en) 1974-06-14
DE2042099B2 (en) 1974-05-22
NL151539B (en) 1976-11-15
NL7012435A (en) 1971-02-23
DE2042111B2 (en) 1972-07-20
FR2058109A5 (en) 1971-05-21
DE2042111A1 (en) 1971-04-22
DE2042099A1 (en) 1971-05-13
DE2042099C3 (en) 1975-01-02
JPS492950B1 (en) 1974-01-23
NL151538B (en) 1976-11-15
DE2042111C3 (en) 1975-05-22
FR2063139A1 (en) 1971-07-09
NL7012436A (en) 1971-02-23
GB1324416A (en) 1973-07-25

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee