JPS492950B1 - - Google Patents

Info

Publication number
JPS492950B1
JPS492950B1 JP44066982A JP6698269A JPS492950B1 JP S492950 B1 JPS492950 B1 JP S492950B1 JP 44066982 A JP44066982 A JP 44066982A JP 6698269 A JP6698269 A JP 6698269A JP S492950 B1 JPS492950 B1 JP S492950B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP44066982A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP44066982A priority Critical patent/JPS492950B1/ja
Priority to FR707030054A priority patent/FR2063139B1/fr
Priority to FR7030053A priority patent/FR2058109A5/fr
Priority to DE2042099A priority patent/DE2042099C3/de
Priority to DE2042111A priority patent/DE2042111C3/de
Priority to GB4014570A priority patent/GB1324416A/en
Priority to GB4014670A priority patent/GB1324417A/en
Priority to NL707012436A priority patent/NL151539B/xx
Priority to NL707012435A priority patent/NL151538B/xx
Publication of JPS492950B1 publication Critical patent/JPS492950B1/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
JP44066982A 1969-08-21 1969-08-21 Pending JPS492950B1 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP44066982A JPS492950B1 (ja) 1969-08-21 1969-08-21
FR707030054A FR2063139B1 (ja) 1969-08-21 1970-08-14
FR7030053A FR2058109A5 (ja) 1969-08-21 1970-08-14
DE2042099A DE2042099C3 (de) 1969-08-21 1970-08-19 Verfahren zum Speichern eines elektrischen Signals
DE2042111A DE2042111C3 (de) 1969-08-21 1970-08-20 Elektronisches Festkörperschaltelement
GB4014570A GB1324416A (en) 1969-08-21 1970-08-20 Electric memory or storage device
GB4014670A GB1324417A (en) 1969-08-21 1970-08-20 Process of switching electrical current
NL707012436A NL151539B (nl) 1969-08-21 1970-08-21 Schakel- en geheugenelement.
NL707012435A NL151538B (nl) 1969-08-21 1970-08-21 Schakel- en geheugenelement.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44066982A JPS492950B1 (ja) 1969-08-21 1969-08-21

Publications (1)

Publication Number Publication Date
JPS492950B1 true JPS492950B1 (ja) 1974-01-23

Family

ID=13331720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP44066982A Pending JPS492950B1 (ja) 1969-08-21 1969-08-21

Country Status (5)

Country Link
JP (1) JPS492950B1 (ja)
DE (2) DE2042099C3 (ja)
FR (2) FR2063139B1 (ja)
GB (2) GB1324416A (ja)
NL (2) NL151539B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE795843A (fr) * 1972-02-25 1973-08-23 Storry Smithson & Co Ltd Perfectionnements relatifs a un systeme de protection cathodique
CH557081A (de) * 1972-12-22 1974-12-13 Ibm Bistabiler widerstand mit von aeusserer energiezufuhr unabhaengigen zustaenden.
DE3245589A1 (de) * 1982-12-09 1984-06-14 Hoechst Ag, 6230 Frankfurt Unvernetzbare, elektrisch leitfaehige formmassen auf der basis von thermoplastischen kunststoffen und russ
US4977357A (en) * 1988-01-11 1990-12-11 Shrier Karen P Overvoltage protection device and material
US4992333A (en) * 1988-11-18 1991-02-12 G&H Technology, Inc. Electrical overstress pulse protection
JP2005516378A (ja) * 2001-06-20 2005-06-02 シタラ リミティド 薄い平面型スイッチおよびその用途

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3359521A (en) * 1965-10-26 1967-12-19 Cognitronics Corp Bistable resistance memory device

Also Published As

Publication number Publication date
NL7012436A (ja) 1971-02-23
GB1324416A (en) 1973-07-25
NL7012435A (ja) 1971-02-23
DE2042099A1 (de) 1971-05-13
FR2063139A1 (ja) 1971-07-09
DE2042099B2 (de) 1974-05-22
NL151538B (nl) 1976-11-15
NL151539B (nl) 1976-11-15
GB1324417A (en) 1973-07-25
FR2063139B1 (ja) 1974-06-14
DE2042111A1 (de) 1971-04-22
DE2042111B2 (de) 1972-07-20
DE2042111C3 (de) 1975-05-22
FR2058109A5 (ja) 1971-05-21
DE2042099C3 (de) 1975-01-02

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