MY197787A - Deep junction electronic device and process for manufacturing thereof - Google Patents
Deep junction electronic device and process for manufacturing thereofInfo
- Publication number
- MY197787A MY197787A MYPI2018002190A MYPI2018002190A MY197787A MY 197787 A MY197787 A MY 197787A MY PI2018002190 A MYPI2018002190 A MY PI2018002190A MY PI2018002190 A MYPI2018002190 A MY PI2018002190A MY 197787 A MY197787 A MY 197787A
- Authority
- MY
- Malaysia
- Prior art keywords
- layer
- substrate
- semiconductor material
- monocrystalline semiconductor
- electronic device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 239000002019 doping agent Substances 0.000 abstract 2
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16172286.3A EP3252800A1 (en) | 2016-05-31 | 2016-05-31 | Deep junction electronic device and process for manufacturing thereof |
PCT/EP2017/063195 WO2017207653A1 (en) | 2016-05-31 | 2017-05-31 | Deep junction electronic device and process for manufacturing thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
MY197787A true MY197787A (en) | 2023-07-14 |
Family
ID=56098063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI2018002190A MY197787A (en) | 2016-05-31 | 2017-05-31 | Deep junction electronic device and process for manufacturing thereof |
Country Status (8)
Country | Link |
---|---|
US (1) | US10566189B2 (ko) |
EP (2) | EP3252800A1 (ko) |
JP (1) | JP2019523986A (ko) |
KR (1) | KR102478873B1 (ko) |
CN (1) | CN109196622B (ko) |
MY (1) | MY197787A (ko) |
SG (1) | SG11201810302QA (ko) |
WO (1) | WO2017207653A1 (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113497158B (zh) * | 2020-04-07 | 2023-03-21 | 珠海格力电器股份有限公司 | 一种快恢复半导体器件及其制作方法 |
US11769668B2 (en) | 2020-04-22 | 2023-09-26 | Istituto Nazionale Di Fisica Nucleare (Infn) | P+ or N+ type doping process for semiconductors |
JP2023531410A (ja) | 2020-06-17 | 2023-07-24 | アプライド マテリアルズ インコーポレイテッド | ドープ層によるゲート界面エンジニアリング |
CN115117198A (zh) * | 2022-05-16 | 2022-09-27 | 上海交通大学 | 一种δ掺杂层制备方法及电子器件 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5752128A (en) * | 1980-09-16 | 1982-03-27 | Hitachi Ltd | Manufacture of semiconductor device |
JPS6255689A (ja) * | 1985-09-03 | 1987-03-11 | 富士通株式会社 | 液晶表示ユニットの実装方法 |
US6890835B1 (en) * | 2000-10-19 | 2005-05-10 | International Business Machines Corporation | Layer transfer of low defect SiGe using an etch-back process |
US20020090772A1 (en) | 2000-12-11 | 2002-07-11 | Seiko Epson Corporation | Method for manufacturing semiconductor lamination, method for manufacturing lamination, semiconductor device, and electronic equipment |
EP1459366A2 (en) | 2001-11-30 | 2004-09-22 | Koninklijke Philips Electronics N.V. | Method of forming a doped region in a semiconductor body comprising a step of amorphization by irradiation |
WO2006033041A1 (en) * | 2004-09-22 | 2006-03-30 | Koninklijke Philips Electronics N.V. | Integrated circuit fabrication using solid phase epitaxy and silicon on insulator technology |
US7679146B2 (en) * | 2006-05-30 | 2010-03-16 | Semiconductor Components Industries, Llc | Semiconductor device having sub-surface trench charge compensation regions |
JP5201305B2 (ja) | 2006-07-03 | 2013-06-05 | 富士電機株式会社 | 半導体装置の製造方法 |
JP5177994B2 (ja) | 2006-11-02 | 2013-04-10 | 住友重機械工業株式会社 | 温度計測装置、及び温度算出方法 |
DE102006053182B4 (de) * | 2006-11-09 | 2015-01-15 | Infineon Technologies Ag | Verfahren zur p-Dotierung von Silizium |
DE102008003953A1 (de) * | 2007-02-28 | 2008-09-04 | Fuji Electric Device Technology Co. Ltd. | Verfahren zur Herstellung eines Halbleiterelements |
JP2009135448A (ja) * | 2007-11-01 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | 半導体基板の作製方法及び半導体装置の作製方法 |
EP2210696A1 (en) | 2009-01-26 | 2010-07-28 | Excico France | Method and apparatus for irradiating a semiconductor material surface by laser energy |
US20100224878A1 (en) * | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5675204B2 (ja) | 2010-07-30 | 2015-02-25 | 新電元工業株式会社 | Igbtの製造方法 |
CN102386067B (zh) * | 2010-08-31 | 2013-12-18 | 中国科学院上海微***与信息技术研究所 | 有效抑制自掺杂效应的外延生长方法 |
JP2012146716A (ja) * | 2011-01-07 | 2012-08-02 | Toshiba Corp | 半導体装置の製造方法 |
EP2899749A1 (en) * | 2014-01-24 | 2015-07-29 | Excico France | Method for forming polycrystalline silicon by laser irradiation |
-
2016
- 2016-05-31 EP EP16172286.3A patent/EP3252800A1/en active Pending
-
2017
- 2017-05-31 EP EP17725999.1A patent/EP3465738A1/en active Pending
- 2017-05-31 SG SG11201810302QA patent/SG11201810302QA/en unknown
- 2017-05-31 WO PCT/EP2017/063195 patent/WO2017207653A1/en unknown
- 2017-05-31 CN CN201780033643.8A patent/CN109196622B/zh active Active
- 2017-05-31 JP JP2018562311A patent/JP2019523986A/ja active Pending
- 2017-05-31 MY MYPI2018002190A patent/MY197787A/en unknown
- 2017-05-31 US US16/305,735 patent/US10566189B2/en active Active
- 2017-05-31 KR KR1020187034699A patent/KR102478873B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN109196622B (zh) | 2024-04-02 |
JP2019523986A (ja) | 2019-08-29 |
US10566189B2 (en) | 2020-02-18 |
SG11201810302QA (en) | 2018-12-28 |
EP3465738A1 (en) | 2019-04-10 |
KR102478873B1 (ko) | 2022-12-19 |
US20190214251A1 (en) | 2019-07-11 |
KR20190015262A (ko) | 2019-02-13 |
WO2017207653A1 (en) | 2017-12-07 |
EP3252800A1 (en) | 2017-12-06 |
CN109196622A (zh) | 2019-01-11 |
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