MY197787A - Deep junction electronic device and process for manufacturing thereof - Google Patents

Deep junction electronic device and process for manufacturing thereof

Info

Publication number
MY197787A
MY197787A MYPI2018002190A MYPI2018002190A MY197787A MY 197787 A MY197787 A MY 197787A MY PI2018002190 A MYPI2018002190 A MY PI2018002190A MY PI2018002190 A MYPI2018002190 A MY PI2018002190A MY 197787 A MY197787 A MY 197787A
Authority
MY
Malaysia
Prior art keywords
layer
substrate
semiconductor material
monocrystalline semiconductor
electronic device
Prior art date
Application number
MYPI2018002190A
Other languages
English (en)
Inventor
Fulvio Mazzamuto
Original Assignee
Laser Systems & Solutions Of Europe
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laser Systems & Solutions Of Europe filed Critical Laser Systems & Solutions Of Europe
Publication of MY197787A publication Critical patent/MY197787A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)
MYPI2018002190A 2016-05-31 2017-05-31 Deep junction electronic device and process for manufacturing thereof MY197787A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP16172286.3A EP3252800A1 (en) 2016-05-31 2016-05-31 Deep junction electronic device and process for manufacturing thereof
PCT/EP2017/063195 WO2017207653A1 (en) 2016-05-31 2017-05-31 Deep junction electronic device and process for manufacturing thereof

Publications (1)

Publication Number Publication Date
MY197787A true MY197787A (en) 2023-07-14

Family

ID=56098063

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2018002190A MY197787A (en) 2016-05-31 2017-05-31 Deep junction electronic device and process for manufacturing thereof

Country Status (8)

Country Link
US (1) US10566189B2 (ko)
EP (2) EP3252800A1 (ko)
JP (1) JP2019523986A (ko)
KR (1) KR102478873B1 (ko)
CN (1) CN109196622B (ko)
MY (1) MY197787A (ko)
SG (1) SG11201810302QA (ko)
WO (1) WO2017207653A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113497158B (zh) * 2020-04-07 2023-03-21 珠海格力电器股份有限公司 一种快恢复半导体器件及其制作方法
US11769668B2 (en) 2020-04-22 2023-09-26 Istituto Nazionale Di Fisica Nucleare (Infn) P+ or N+ type doping process for semiconductors
JP2023531410A (ja) 2020-06-17 2023-07-24 アプライド マテリアルズ インコーポレイテッド ドープ層によるゲート界面エンジニアリング
CN115117198A (zh) * 2022-05-16 2022-09-27 上海交通大学 一种δ掺杂层制备方法及电子器件

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5752128A (en) * 1980-09-16 1982-03-27 Hitachi Ltd Manufacture of semiconductor device
JPS6255689A (ja) * 1985-09-03 1987-03-11 富士通株式会社 液晶表示ユニットの実装方法
US6890835B1 (en) * 2000-10-19 2005-05-10 International Business Machines Corporation Layer transfer of low defect SiGe using an etch-back process
US20020090772A1 (en) 2000-12-11 2002-07-11 Seiko Epson Corporation Method for manufacturing semiconductor lamination, method for manufacturing lamination, semiconductor device, and electronic equipment
EP1459366A2 (en) 2001-11-30 2004-09-22 Koninklijke Philips Electronics N.V. Method of forming a doped region in a semiconductor body comprising a step of amorphization by irradiation
WO2006033041A1 (en) * 2004-09-22 2006-03-30 Koninklijke Philips Electronics N.V. Integrated circuit fabrication using solid phase epitaxy and silicon on insulator technology
US7679146B2 (en) * 2006-05-30 2010-03-16 Semiconductor Components Industries, Llc Semiconductor device having sub-surface trench charge compensation regions
JP5201305B2 (ja) 2006-07-03 2013-06-05 富士電機株式会社 半導体装置の製造方法
JP5177994B2 (ja) 2006-11-02 2013-04-10 住友重機械工業株式会社 温度計測装置、及び温度算出方法
DE102006053182B4 (de) * 2006-11-09 2015-01-15 Infineon Technologies Ag Verfahren zur p-Dotierung von Silizium
DE102008003953A1 (de) * 2007-02-28 2008-09-04 Fuji Electric Device Technology Co. Ltd. Verfahren zur Herstellung eines Halbleiterelements
JP2009135448A (ja) * 2007-11-01 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法及び半導体装置の作製方法
EP2210696A1 (en) 2009-01-26 2010-07-28 Excico France Method and apparatus for irradiating a semiconductor material surface by laser energy
US20100224878A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5675204B2 (ja) 2010-07-30 2015-02-25 新電元工業株式会社 Ｉｇｂｔの製造方法
CN102386067B (zh) * 2010-08-31 2013-12-18 中国科学院上海微***与信息技术研究所 有效抑制自掺杂效应的外延生长方法
JP2012146716A (ja) * 2011-01-07 2012-08-02 Toshiba Corp 半導体装置の製造方法
EP2899749A1 (en) * 2014-01-24 2015-07-29 Excico France Method for forming polycrystalline silicon by laser irradiation

Also Published As

Publication number Publication date
CN109196622B (zh) 2024-04-02
JP2019523986A (ja) 2019-08-29
US10566189B2 (en) 2020-02-18
SG11201810302QA (en) 2018-12-28
EP3465738A1 (en) 2019-04-10
KR102478873B1 (ko) 2022-12-19
US20190214251A1 (en) 2019-07-11
KR20190015262A (ko) 2019-02-13
WO2017207653A1 (en) 2017-12-07
EP3252800A1 (en) 2017-12-06
CN109196622A (zh) 2019-01-11

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