MY121244A - Precursor with alkylaminosilylolefin ligands to deposit copper and method for same - Google Patents
Precursor with alkylaminosilylolefin ligands to deposit copper and method for sameInfo
- Publication number
- MY121244A MY121244A MYPI97004968A MYPI9704968A MY121244A MY 121244 A MY121244 A MY 121244A MY PI97004968 A MYPI97004968 A MY PI97004968A MY PI9704968 A MYPI9704968 A MY PI9704968A MY 121244 A MY121244 A MY 121244A
- Authority
- MY
- Malaysia
- Prior art keywords
- precursor
- ligand
- groups
- hfac
- alkyloxy
- Prior art date
Links
- 239000002243 precursor Substances 0.000 title abstract 9
- 239000003446 ligand Substances 0.000 title abstract 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052802 copper Inorganic materials 0.000 title abstract 2
- 239000010949 copper Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- -1 AMINO GROUPS Chemical group 0.000 abstract 4
- QAMFBRUWYYMMGJ-UHFFFAOYSA-N hexafluoroacetylacetone Chemical compound FC(F)(F)C(=O)CC(=O)C(F)(F)F QAMFBRUWYYMMGJ-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 239000012691 Cu precursor Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-PWCQTSIFSA-N Tritiated water Chemical compound [3H]O[3H] XLYOFNOQVPJJNP-PWCQTSIFSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0803—Compounds with Si-C or Si-Si linkages
- C07F7/081—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
- C07F7/1804—Compounds having Si-O-C linkages
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A METHOD IS PROVIDED FOR APPLYING CHEMICAL VAPOR DEPOSITION (CVD) COPPER (CU) TO INTEGRATED CIRCUIT SUBSTRATES USING A PRECURSOR (60) WITH A SILYLOLEFIN LIGAND (120) INCLUDING AN ALKYLAMINO ATTACHED TO THE SILICON ATOM OF THE LIGAND. IN PREFERRED EMBODIMENTS, THE LIGAND FURTHER INCLUDES ALKYLOXY GROUPS, OR ALKYL GROUPS, OR BOTH ALKYLOXY AND ALKYL GROUPS. THE LIGAND (120) IS ABLE TO PROVIDE THE ELECTRONS FROM THE NITROGEN ATOMS OF THE AMINO GROUPS, AND ALSO FROM OXYGEN ATOMS, WHEN ALKYLOXY GROUPS ARE INCLUDED, TO PREVENT UNINTENDED LOW TEMPERATURE DECOMPOSITION OF THE PRECURSOR. THE IMPROVED TEMPERATURE STABILITY OF THE BOND BETWEEN CU AND THE LIGAND HELPS INSURE THAT THE LIGAND SEPARATES FROM THE (HFAC)CU COMPLEX AT CONSISTENT TEMPERATURES WHEN CU IS TO BE DEPOSITED. THE MOLECULAR WEIGHT OF THE PRECURSOR (60) IS ADJUSTABLE TO INFLUENCE THE VAPOR PRESSURE OF THE VOLATILE PRECURSOR. THE MOLECULAR WEIGHT IS PRIMARILY ADJUSTED THROUGH THE SELECTION OF THE NUMBER OF CARBONS ATOMS IN THE AMINO GROUPS, ALKYL, AND ALKYLOXY GROUPS. THE CHARACTERISTICS OF THE PRECURSOR ARE ALSO INFLUENCED THROUGH THE USE OF STRAIGHT, BRANCHED, OR CYCLIC TYPE CARBON CHAINS. IN A PREFERRED EMBODIMENT, WATER VAPOR IS ADDED TO THE VOLATILE PRECURSOR TO IMPROVE THE CONDUCTIVITY OF THE DEPOSITED CU. OTHER EMBODIMENTS PROVIDE A PRECURSOR BLEND MADE FROM ADDITIONAL SILYLOLEFINS, HEXAFLUOROACETYLACETONE (H-HFAC), H-HFAC DIHYDRATE, AND WATER, EITHER SEPARATELY, OR IN COMBINATIONS, TO ENHANCE DEPOSITION RATE, CONDUCTIVITY, AND PRECURSOR STABILITY. A CU PRECURSOR COMPOUND (100) INCLUDING ALKYL AMINO GROUPS ATTACHED TO THE SILICON ATOM OF A (HFAC)CU(LIGAND) IS ALSO PROVIDED.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US78669897A | 1997-01-23 | 1997-01-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY121244A true MY121244A (en) | 2006-01-28 |
Family
ID=25139355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI97004968A MY121244A (en) | 1997-01-23 | 1997-10-22 | Precursor with alkylaminosilylolefin ligands to deposit copper and method for same |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0855399B1 (en) |
| JP (1) | JPH10204640A (en) |
| KR (1) | KR100288365B1 (en) |
| DE (1) | DE69721472T2 (en) |
| MY (1) | MY121244A (en) |
| TW (1) | TW399231B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6090960A (en) * | 1997-01-07 | 2000-07-18 | Sharp Laboratories Of America, Inc. | Precursor with (methoxy) (methyl) silylolefin ligand to deposit copper and method same |
| JP2000087241A (en) * | 1998-09-15 | 2000-03-28 | Sharp Corp | Method for depositing copper using precursor with (alkyloxy) (alkyl)silylolefin ligand |
| KR100460746B1 (en) | 1999-04-13 | 2004-12-09 | 주식회사 하이닉스반도체 | Method of forming a copper wiring in a semiconductor device |
| US6337148B1 (en) * | 1999-05-25 | 2002-01-08 | Advanced Technology Materials, Inc. | Copper source reagent compositions, and method of making and using same for microelectronic device structures |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5273775A (en) * | 1990-09-12 | 1993-12-28 | Air Products And Chemicals, Inc. | Process for selectively depositing copper aluminum alloy onto a substrate |
-
1997
- 1997-10-14 JP JP9280557A patent/JPH10204640A/en not_active Withdrawn
- 1997-10-17 TW TW086115322A patent/TW399231B/en not_active IP Right Cessation
- 1997-10-22 MY MYPI97004968A patent/MY121244A/en unknown
- 1997-10-27 KR KR1019970055158A patent/KR100288365B1/en not_active IP Right Cessation
- 1997-11-13 EP EP97309120A patent/EP0855399B1/en not_active Expired - Lifetime
- 1997-11-13 DE DE69721472T patent/DE69721472T2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10204640A (en) | 1998-08-04 |
| EP0855399A3 (en) | 1999-07-07 |
| DE69721472T2 (en) | 2004-02-19 |
| EP0855399A2 (en) | 1998-07-29 |
| EP0855399B1 (en) | 2003-05-02 |
| KR100288365B1 (en) | 2001-06-01 |
| KR19980070040A (en) | 1998-10-26 |
| TW399231B (en) | 2000-07-21 |
| DE69721472D1 (en) | 2003-06-05 |
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