AU2001263687A1 - Self-reducible copper(ii) source reagents for chemical vapor deposition of copper metal - Google Patents

Self-reducible copper(ii) source reagents for chemical vapor deposition of copper metal

Info

Publication number
AU2001263687A1
AU2001263687A1 AU2001263687A AU6368701A AU2001263687A1 AU 2001263687 A1 AU2001263687 A1 AU 2001263687A1 AU 2001263687 A AU2001263687 A AU 2001263687A AU 6368701 A AU6368701 A AU 6368701A AU 2001263687 A1 AU2001263687 A1 AU 2001263687A1
Authority
AU
Australia
Prior art keywords
copper
self
vapor deposition
chemical vapor
alkyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001263687A
Inventor
Arthur J. Carty
Peng-Fu Hsu
Tsung-Wu Lin
Chao-Shiuan Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LIN TSUNG WU
LIU CHAO SHIUAN
Original Assignee
LIN TSUNG WU
LIU CHAO SHIUAN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LIN TSUNG WU, LIU CHAO SHIUAN filed Critical LIN TSUNG WU
Publication of AU2001263687A1 publication Critical patent/AU2001263687A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C215/00—Compounds containing amino and hydroxy groups bound to the same carbon skeleton
    • C07C215/02—Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton
    • C07C215/04—Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being saturated
    • C07C215/06—Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being saturated and acyclic
    • C07C215/08—Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being saturated and acyclic with only one hydroxy group and one amino group bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C217/00—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton
    • C07C217/02—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton
    • C07C217/04—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated
    • C07C217/06—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one etherified hydroxy group and one amino group bound to the carbon skeleton, which is not further substituted
    • C07C217/08—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one etherified hydroxy group and one amino group bound to the carbon skeleton, which is not further substituted the oxygen atom of the etherified hydroxy group being further bound to an acyclic carbon atom

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Volatile low melting solid Cu(II) metal complexes are provided which are capable of depositing a copper film on various substrates under CVD conditions in the absence of reducing carrier gas H2. These CU(II) metal complexes are represented by the structure formula:wherein R1 is selected from hydrogen, C1-C4 lower-alkyl or perfluorinated C1-C4 lower-alkyl groups, e.g., CH3, and CF3, etc., and wherein R2 is C1-C6 lower-alkyl or C1-C6 lower-alkene, which may be substituted by one or more fluorine atoms, by a C1-C6 lower-alkoxy group or by a C1-C6 di-lower-alkyl amino group, provided that when R1 is CF3, R2 is other than hydrogen or methyl. A process for depositing copper film using these Cu(II) metal complexes is also provided.
AU2001263687A 2000-06-09 2001-05-31 Self-reducible copper(ii) source reagents for chemical vapor deposition of copper metal Abandoned AU2001263687A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09589757 2000-06-09
US09/589,757 US6369256B1 (en) 2000-06-09 2000-06-09 Self-reducible copper(II) source reagents for chemical vapor deposition of copper metal
PCT/CA2001/000796 WO2001094291A1 (en) 2000-06-09 2001-05-31 Self-reducible copper(ii) source reagents for chemical vapor deposition of copper metal

Publications (1)

Publication Number Publication Date
AU2001263687A1 true AU2001263687A1 (en) 2001-12-17

Family

ID=24359392

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001263687A Abandoned AU2001263687A1 (en) 2000-06-09 2001-05-31 Self-reducible copper(ii) source reagents for chemical vapor deposition of copper metal

Country Status (8)

Country Link
US (1) US6369256B1 (en)
EP (1) EP1296933B1 (en)
JP (1) JP2003535839A (en)
AT (1) ATE292106T1 (en)
AU (1) AU2001263687A1 (en)
CA (1) CA2419837A1 (en)
DE (1) DE60109779D1 (en)
WO (1) WO2001094291A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6620956B2 (en) * 2001-11-16 2003-09-16 Applied Materials, Inc. Nitrogen analogs of copper II β-diketonates as source reagents for semiconductor processing
KR100704464B1 (en) 2003-02-26 2007-04-10 한국화학연구원 Copper aminoalkoxide complexes, preparation method thereof and process for the formation of copper thin film using the same
DE10360046A1 (en) 2003-12-18 2005-07-21 Basf Ag Copper (I) formate
TW200611990A (en) * 2004-08-16 2006-04-16 Du Pont Atomic layer deposition of copper using surface-activating agents
US6982341B1 (en) * 2005-03-30 2006-01-03 Korea Research Institute Of Chemical Technology Volatile copper aminoalkoxide complex and deposition of copper thin film using same
KR102046334B1 (en) * 2012-11-13 2019-11-19 가부시키가이샤 아데카 Metal alkoxide compound, thin film-forming starting material, method for producing thin film, and alcohol compound
WO2016197234A1 (en) * 2015-06-11 2016-12-15 National Research Council Of Canada Preparation of high conductivity copper films
KR20190042461A (en) 2017-10-14 2019-04-24 어플라이드 머티어리얼스, 인코포레이티드 Integration of ald copper with high temperature pvd copper deposition for beol interconnect
EP4180417A1 (en) * 2020-07-09 2023-05-17 Adeka Corporation Alkoxide compound, thin film-forming material, and method for manufacturing thin film

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356527A (en) 1964-04-23 1967-12-05 Ross W Moshier Vapor-plating metals from fluorocarbon keto metal compounds
US5084201A (en) * 1989-11-14 1992-01-28 Akzo N.V. Soluble copper amino alkoxides
DE4222021C2 (en) 1992-07-04 1994-06-23 Christian Dipl Chem Terfloth Connections for the deposition of copper layers
JP3865187B2 (en) 1998-11-10 2007-01-10 シャープ株式会社 Substituted phenylethylene precursor and synthesis method thereof

Also Published As

Publication number Publication date
EP1296933B1 (en) 2005-03-30
DE60109779D1 (en) 2005-05-04
US6369256B1 (en) 2002-04-09
WO2001094291A1 (en) 2001-12-13
JP2003535839A (en) 2003-12-02
ATE292106T1 (en) 2005-04-15
EP1296933A1 (en) 2003-04-02
CA2419837A1 (en) 2001-12-31

Similar Documents

Publication Publication Date Title
CN101680085B (en) New cobalt precursors for semiconductor applications
TW200710257A (en) Novel deposition method of ternary films
TW200506090A (en) Methods for forming aluminum containing films utilizing amino aluminum precursors
EP1026222A3 (en) Organic material for electroluminescent device and electroluminescent device using the same
TW200513546A (en) Catalyst composition and deposition method
WO2006088686A3 (en) Organoaluminum precursor compounds
WO2005057630A3 (en) Manufacturable low-temperature silicon carbide deposition technology
TW200609238A (en) Chemical vapor deposition material and chemical vapor deposition
TW241260B (en)
WO2003095702A3 (en) Method for curing low dielectric constant film by electron beam
AU2001263687A1 (en) Self-reducible copper(ii) source reagents for chemical vapor deposition of copper metal
RS1204A (en) Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
AU2002365543A1 (en) METHOD OF SYNTHESIZING A COMPOUND OF THE FORMULA Mn+1AXn, FILM OF THE COMPOUND AND ITS USE
EP1852438B1 (en) Tantalum compound, method for producing same, tantalum-containing thin film and method for forming same
WO2005060383A3 (en) Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings
MY119325A (en) Method of manufacturing bi-layered ferroelectric thin film
TW200609241A (en) Organometallic precursor compounds
TW329017B (en) Method for forming dielectric film
WO2003106011A3 (en) A method for producing organometallic compounds
US20090104375A1 (en) Neutral ligand containing precursors and methods for deposition of a metal containing film
TW200500327A (en) Volatile copper(I) complexes for deposition of copper films by atomic layer deposition
AU2002213471A1 (en) Flame-treating process
TW200619413A (en) Metal compound, thin film-forming material, and method for producing thin film
DE60043300D1 (en)
TW200622023A (en) Methods for producing noble metal films, noble metal oxide films, and noble metal silicide films