MX2010002728A - Proceso para la producción de silicio de alta y media pureza a partir de silicio de grado metalurgico. - Google Patents

Proceso para la producción de silicio de alta y media pureza a partir de silicio de grado metalurgico.

Info

Publication number
MX2010002728A
MX2010002728A MX2010002728A MX2010002728A MX2010002728A MX 2010002728 A MX2010002728 A MX 2010002728A MX 2010002728 A MX2010002728 A MX 2010002728A MX 2010002728 A MX2010002728 A MX 2010002728A MX 2010002728 A MX2010002728 A MX 2010002728A
Authority
MX
Mexico
Prior art keywords
silicon
melt
metallurgical grade
purity
exterior shell
Prior art date
Application number
MX2010002728A
Other languages
English (en)
Inventor
Dominic Leblanc
Rene Boisvert
Original Assignee
Silicium Becancour Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicium Becancour Inc filed Critical Silicium Becancour Inc
Publication of MX2010002728A publication Critical patent/MX2010002728A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

Se proporciona un proceso para purificar el silicio de grado metalúrgico de baja pureza, que contiene por lo menos un contaminante y que obtiene un silicio policristalino sólido de alta pureza. El proceso incluye contener una fusión de silicio de grado metalúrgico de baja pureza en un molde que tiene paredes inferiores y laterales aisladas, y una parte superior abierta; solidificar la fusión por solidificación unidireccional de la parte superior abierta hacia la pared inferior mientras que se agita electromagnéticamente la fusión; controlar un índice de solidificación unidireccional; detener la solidificación unidireccional cuando la fusión ha solidificado parcialmente para producir un lingote que tiene un recubrimiento exterior que incluye el silicio policristalino sólido de alta pureza y un centro que incluye un silicio líquido enriquecido con impurezas; y crear una abertura en el recubrimiento exterior del lingote para descargar el silicio líquido enriquecido con impurezas y dejar el recubrimiento exterior que tiene el silicio policristalino sólido de alta pureza.
MX2010002728A 2007-09-13 2008-03-13 Proceso para la producción de silicio de alta y media pureza a partir de silicio de grado metalurgico. MX2010002728A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US96006107P 2007-09-13 2007-09-13
PCT/CA2008/000492 WO2009033255A1 (en) 2007-09-13 2008-03-13 Process for the production of medium and high purity silicon from metallurgical grade silicon

Publications (1)

Publication Number Publication Date
MX2010002728A true MX2010002728A (es) 2010-08-02

Family

ID=40451503

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2010002728A MX2010002728A (es) 2007-09-13 2008-03-13 Proceso para la producción de silicio de alta y media pureza a partir de silicio de grado metalurgico.

Country Status (16)

Country Link
US (1) US7727502B2 (es)
EP (1) EP2212249B1 (es)
JP (1) JP2010538952A (es)
KR (1) KR20100061510A (es)
CN (1) CN101868422B (es)
AU (1) AU2008299523A1 (es)
BR (1) BRPI0816972A2 (es)
CA (1) CA2695393C (es)
EA (1) EA017480B1 (es)
ES (1) ES2530720T3 (es)
MX (1) MX2010002728A (es)
MY (1) MY143807A (es)
NO (1) NO20100512L (es)
UA (1) UA97691C2 (es)
WO (1) WO2009033255A1 (es)
ZA (1) ZA201000882B (es)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2008260891A1 (en) * 2007-06-08 2008-12-11 Shin-Etsu Chemical Co., Ltd. Method of solidifying metallic silicon
JP4748187B2 (ja) * 2007-12-27 2011-08-17 国立大学法人東北大学 Ｓｉ結晶インゴットの製造方法
CN103154288A (zh) 2010-05-20 2013-06-12 道康宁公司 制备铝-硅合金的方法和***
JP2012106886A (ja) * 2010-11-17 2012-06-07 Nippon Steel Materials Co Ltd 金属シリコンの凝固精製方法及び装置
CN102275931B (zh) * 2011-07-05 2013-05-29 兰州大学 氢氧焰等离子体提纯冶金级多晶硅粉体的方法
WO2013010575A1 (en) * 2011-07-18 2013-01-24 Abb Research Ltd A method and a control system for controlling a melting process
CN103266350B (zh) * 2013-05-31 2015-08-12 大连理工大学 多晶硅铸锭硅真空固液分离方法及分离设备
CN103266349B (zh) * 2013-05-31 2015-07-15 大连理工大学 高纯中空硅材料、多晶硅铸锭硅真空固液分离方法及设备
JP6401051B2 (ja) * 2014-12-26 2018-10-03 京セラ株式会社 多結晶シリコンインゴットの製造方法
RU2632827C2 (ru) * 2015-12-08 2017-10-10 Общество с ограниченной ответственностью "Современные химические и металлургические технологии" (ООО "СХИМТ") Устройство для рафинирования кремния
CN107255572B (zh) * 2017-05-12 2020-04-21 宜昌南玻硅材料有限公司 半熔铸锭工艺中硅锭的少子寿命抽样方法
JP6919633B2 (ja) 2018-08-29 2021-08-18 信越半導体株式会社 単結晶育成方法
EP3847131B1 (de) * 2019-04-30 2023-03-01 Wacker Chemie AG Verfahren zur raffination von rohsilicium-schmelzen mittels eines partikulären mediators
CN111675222B (zh) * 2020-07-13 2022-08-09 昆明理工大学 一种利用低品位硅石生产工业硅的方法
EP4082966A1 (en) * 2021-04-26 2022-11-02 Ferroglobe Innovation, S.L. Method for obtaining purified silicon metal

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2890139A (en) * 1956-12-10 1959-06-09 Shockley William Semi-conductive material purification method and apparatus
US3012865A (en) * 1957-11-25 1961-12-12 Du Pont Silicon purification process
US3752221A (en) * 1969-10-30 1973-08-14 United Aircraft Corp Mold apparatus for casting with downward unidirectional solidification
US4094731A (en) * 1976-06-21 1978-06-13 Interlake, Inc. Method of purifying silicon
US4298423A (en) * 1976-12-16 1981-11-03 Semix Incorporated Method of purifying silicon
US4200621A (en) * 1978-07-18 1980-04-29 Motorola, Inc. Sequential purification and crystal growth
US4242175A (en) * 1978-12-26 1980-12-30 Zumbrunnen Allen D Silicon refining process
GB2052461B (en) * 1979-05-24 1983-04-07 Aluminum Co Of America Silicon purification method
US4304703A (en) * 1980-06-23 1981-12-08 Ppg Industries, Inc. Cationic polymer dispersions and their method of preparation
DE3150539A1 (de) 1981-12-21 1983-06-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von fuer halbleiterbauelemente, insbesondere fuer solarzellen, verwendbarem silizium
FR2524489A1 (fr) * 1982-03-30 1983-10-07 Pechiney Aluminium Procede de purification de metaux par segregation
DE3220285A1 (de) 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen polykristalliner, fuer nachfolgendes zonenschmelzen geeigneter siliciumstaebe
NO152551C (no) * 1983-02-07 1985-10-16 Elkem As Fremgangsmaate til fremstilling av rent silisium.
DE3310827A1 (de) * 1983-03-24 1984-09-27 Bayer Ag, 5090 Leverkusen Verfahren zur herstellung von grobkristallinem silicium
DE3323896A1 (de) 1983-07-02 1985-01-17 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum gerichteten erstarren von schmelzen
JPH0753569B2 (ja) * 1986-08-07 1995-06-07 昭和アルミニウム株式会社 ケイ素の精製方法
JPH0696444B2 (ja) 1987-08-27 1994-11-30 川崎製鉄株式会社 高純度シリコンの製造方法
DE3802531A1 (de) 1988-01-28 1989-08-17 Siemens Ag Verfahren zum abtrennen von festen partikeln aus siliziumschmelzen
DE3804248A1 (de) 1988-02-11 1989-08-24 Siemens Ag Verfahren zum abtrennen von verunreinigungen aus einer siliziumschmelze durch gerichtete erstarrung
DE3929635A1 (de) 1989-09-06 1991-03-07 Siemens Ag Verfahren zum abtrennen fester partikel aus siliziumschmelzen
JPH05124809A (ja) 1991-10-30 1993-05-21 Nippon Sheet Glass Co Ltd シリコンの凝固精製法
JP3263104B2 (ja) 1991-11-27 2002-03-04 川崎製鉄株式会社 金属シリコンの精製方法
JPH05254817A (ja) * 1992-03-12 1993-10-05 Kawasaki Steel Corp 多結晶シリコン鋳塊の製造方法
WO1997003922A1 (fr) 1994-01-10 1997-02-06 Showa Aluminum Corporation Procede pour produire du silicium tres pur
JP3140300B2 (ja) 1994-03-29 2001-03-05 川崎製鉄株式会社 シリコンの精製方法および精製装置
NO180532C (no) * 1994-09-01 1997-05-07 Elkem Materials Fremgangsmåte for fjerning av forurensninger fra smeltet silisium
JPH0873297A (ja) 1994-09-05 1996-03-19 Shin Etsu Chem Co Ltd 太陽電池用基板材料の製法とこれを用いた太陽電池
JPH08217436A (ja) 1995-02-17 1996-08-27 Kawasaki Steel Corp 金属シリコンの凝固精製方法、その装置及びその装置に用いる鋳型
DE69616686T2 (de) * 1995-08-04 2002-08-14 Sharp K.K., Osaka Vorrichtung zum Reinigen von Metallen
JP3325900B2 (ja) * 1996-10-14 2002-09-17 川崎製鉄株式会社 多結晶シリコンの製造方法及び装置、並びに太陽電池用シリコン基板の製造方法
JPH10139415A (ja) 1996-10-30 1998-05-26 Kawasaki Steel Corp 溶融シリコンの凝固精製方法
JPH10182135A (ja) 1996-12-20 1998-07-07 Kawasaki Steel Corp シリコンの凝固精製方法
JPH10182129A (ja) 1996-12-26 1998-07-07 Kawasaki Steel Corp 金属シリコンの精製方法
JPH10182286A (ja) 1996-12-26 1998-07-07 Kawasaki Steel Corp シリコンの連続鋳造方法
JPH10182137A (ja) 1996-12-26 1998-07-07 Kawasaki Steel Corp 太陽電池用シリコンの凝固精製方法及び装置
JP3852147B2 (ja) 1996-12-27 2006-11-29 Ｊｆｅスチール株式会社 太陽電池用多結晶シリコン・インゴットの製造方法
JPH10251008A (ja) 1997-03-14 1998-09-22 Kawasaki Steel Corp 金属シリコンの凝固精製方法
JPH10251009A (ja) 1997-03-14 1998-09-22 Kawasaki Steel Corp 太陽電池用シリコンの凝固精製方法
CA2232777C (en) * 1997-03-24 2001-05-15 Hiroyuki Baba Method for producing silicon for use in solar cells
JPH10273313A (ja) 1997-03-28 1998-10-13 Kawasaki Steel Corp 多結晶シリコン鋳塊の製造方法
JPH10273311A (ja) 1997-03-28 1998-10-13 Kawasaki Steel Corp 太陽電池用シリコンの精製方法及び装置
JP3520957B2 (ja) * 1997-06-23 2004-04-19 シャープ株式会社 多結晶半導体インゴットの製造方法および装置
JP3523986B2 (ja) * 1997-07-02 2004-04-26 シャープ株式会社 多結晶半導体の製造方法および製造装置
US5972107A (en) * 1997-08-28 1999-10-26 Crystal Systems, Inc. Method for purifying silicon
JP4003271B2 (ja) 1998-01-12 2007-11-07 Ｊｆｅスチール株式会社 シリコンの一方向凝固装置
JPH11310496A (ja) * 1998-02-25 1999-11-09 Mitsubishi Materials Corp 一方向凝固組織を有するシリコンインゴットの製造方法およびその製造装置
JP4365480B2 (ja) 1999-06-07 2009-11-18 昭和電工株式会社 高純度シリコンの製造方法
JP2001278613A (ja) 2000-03-29 2001-10-10 Kawasaki Steel Corp シリコンの一方向凝固装置
FR2827592B1 (fr) * 2001-07-23 2003-08-22 Invensil Silicium metallurgique de haute purete et procede d'elaboration
FR2831881B1 (fr) 2001-11-02 2004-01-16 Hubert Lauvray Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire
JP2003238137A (ja) 2002-02-21 2003-08-27 Kawatetsu Techno Res Corp 太陽電池用多結晶シリコンの製造方法
NO318092B1 (no) 2002-05-22 2005-01-31 Elkem Materials Kalsium-silikatbasert slagg, fremgangsmate for fremstilling av kalsium-silikatbasert slagg, og anvendelse for slaggbehandling av smeltet silium
AU2003277041A1 (en) * 2002-09-27 2004-04-19 Astropower, Inc. Methods and systems for purifying elements
CN1221470C (zh) 2002-11-26 2005-10-05 郑智雄 高纯度硅的生产方法
CN1299983C (zh) 2003-07-22 2007-02-14 龚炳生 光电级硅的制造方法
EP1687240A1 (en) 2003-12-04 2006-08-09 Dow Corning Corporation Method of removing impurities from metallurgical grade silicon to produce solar grade silicon
NO333319B1 (no) 2003-12-29 2013-05-06 Elkem As Silisiummateriale for fremstilling av solceller
JP4115432B2 (ja) 2004-07-14 2008-07-09 シャープ株式会社 金属の精製方法
CA2660386C (en) * 2006-09-14 2012-05-01 Silicium Becancour Inc. Process and apparatus for purifying low-grade silicon material

Also Published As

Publication number Publication date
CA2695393C (en) 2012-01-03
CN101868422B (zh) 2013-10-09
EA017480B1 (ru) 2012-12-28
CN101868422A (zh) 2010-10-20
MY143807A (en) 2011-07-15
WO2009033255A1 (en) 2009-03-19
UA97691C2 (ru) 2012-03-12
CA2695393A1 (en) 2009-03-19
ZA201000882B (en) 2011-04-28
ES2530720T3 (es) 2015-03-04
AU2008299523A1 (en) 2009-03-19
EA201070358A1 (ru) 2010-08-30
EP2212249A4 (en) 2012-08-15
US20090074648A1 (en) 2009-03-19
BRPI0816972A2 (pt) 2015-03-24
NO20100512L (no) 2010-04-08
US7727502B2 (en) 2010-06-01
EP2212249B1 (en) 2015-01-14
JP2010538952A (ja) 2010-12-16
EP2212249A1 (en) 2010-08-04
KR20100061510A (ko) 2010-06-07

Similar Documents

Publication Publication Date Title
MY143807A (en) Process for the production of medium and high purity silicon from metallurgical grade silicon
UA88964C2 (ru) Тигель ДЛЯ КРИСТАЛЛИЗАЦИИ КРЕМНИЯ И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ
UA97488C2 (ru) Способ очистки кремнийсодержащего материала низкой чистоты, применение барабанной печи в нем, расплав кремнийсодержащего материала, отходящие газы и твердый поликристаллический кремний, полученные данным способом
EP1947221A3 (en) Casting method for polycrystalline silicon
JP2010538952A5 (es)
EP2179078A4 (en) METHOD AND SYSTEM FOR PRODUCING INGOTS USING LOW QUALITY SILICON MATERIAL
PH12014502557A1 (en) A method and apparatus for the production of a casting
CN206605009U (zh) 环形铸件用浇注***
CN102380588A (zh) 中频感应定向凝固铸锭方法及其装置
CN202490928U (zh) 一种能够去除夹杂物的中间包用长水口装置
CN201432083Y (zh) 变形镁合金铸锭分流盘
CN104249149B (zh) 一种通道式感应加热中间包及其浇铸方法
CN202192235U (zh) 镁合金低频脉冲磁场辅助半连续铸造结晶器
CN202164381U (zh) 一种可重复使用的铸锭用坩埚
WO2008096411A1 (ja) 鉄系合金の半凝固スラリーの製造方法及び製造装置
CN101570828B (zh) 一种可输出金属液的节能型双级电渣精炼***
CN202021336U (zh) 一种低压铸造用浇口套
WO2018082241A1 (zh) 一种新型非晶母合金锭连铸***及其使用方法
CN202655594U (zh) 一种在型腔内半固态加工成形装置
CN103464732A (zh) 一种中间包悬浮夹杂捕集吸收的方法
CN202539559U (zh) 特种钢防絮狭缝针孔透气浸入式水口
JP5748123B2 (ja) 柱状インゴットの鋳造方法
CN201485492U (zh) 电渣精炼坩埚炉与感应加热保温炉组成的双级精炼装置
CN202639262U (zh) 一种50吨矩形扁锭用钢锭模
CN203235946U (zh) 一种低压铸造用浇口套

Legal Events

Date Code Title Description
FG Grant or registration