MX2010002728A - Proceso para la producción de silicio de alta y media pureza a partir de silicio de grado metalurgico. - Google Patents
Proceso para la producción de silicio de alta y media pureza a partir de silicio de grado metalurgico.Info
- Publication number
- MX2010002728A MX2010002728A MX2010002728A MX2010002728A MX2010002728A MX 2010002728 A MX2010002728 A MX 2010002728A MX 2010002728 A MX2010002728 A MX 2010002728A MX 2010002728 A MX2010002728 A MX 2010002728A MX 2010002728 A MX2010002728 A MX 2010002728A
- Authority
- MX
- Mexico
- Prior art keywords
- silicon
- melt
- metallurgical grade
- purity
- exterior shell
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
Se proporciona un proceso para purificar el silicio de grado metalúrgico de baja pureza, que contiene por lo menos un contaminante y que obtiene un silicio policristalino sólido de alta pureza. El proceso incluye contener una fusión de silicio de grado metalúrgico de baja pureza en un molde que tiene paredes inferiores y laterales aisladas, y una parte superior abierta; solidificar la fusión por solidificación unidireccional de la parte superior abierta hacia la pared inferior mientras que se agita electromagnéticamente la fusión; controlar un índice de solidificación unidireccional; detener la solidificación unidireccional cuando la fusión ha solidificado parcialmente para producir un lingote que tiene un recubrimiento exterior que incluye el silicio policristalino sólido de alta pureza y un centro que incluye un silicio líquido enriquecido con impurezas; y crear una abertura en el recubrimiento exterior del lingote para descargar el silicio líquido enriquecido con impurezas y dejar el recubrimiento exterior que tiene el silicio policristalino sólido de alta pureza.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US96006107P | 2007-09-13 | 2007-09-13 | |
PCT/CA2008/000492 WO2009033255A1 (en) | 2007-09-13 | 2008-03-13 | Process for the production of medium and high purity silicon from metallurgical grade silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
MX2010002728A true MX2010002728A (es) | 2010-08-02 |
Family
ID=40451503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2010002728A MX2010002728A (es) | 2007-09-13 | 2008-03-13 | Proceso para la producción de silicio de alta y media pureza a partir de silicio de grado metalurgico. |
Country Status (16)
Country | Link |
---|---|
US (1) | US7727502B2 (es) |
EP (1) | EP2212249B1 (es) |
JP (1) | JP2010538952A (es) |
KR (1) | KR20100061510A (es) |
CN (1) | CN101868422B (es) |
AU (1) | AU2008299523A1 (es) |
BR (1) | BRPI0816972A2 (es) |
CA (1) | CA2695393C (es) |
EA (1) | EA017480B1 (es) |
ES (1) | ES2530720T3 (es) |
MX (1) | MX2010002728A (es) |
MY (1) | MY143807A (es) |
NO (1) | NO20100512L (es) |
UA (1) | UA97691C2 (es) |
WO (1) | WO2009033255A1 (es) |
ZA (1) | ZA201000882B (es) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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AU2008260891A1 (en) * | 2007-06-08 | 2008-12-11 | Shin-Etsu Chemical Co., Ltd. | Method of solidifying metallic silicon |
JP4748187B2 (ja) * | 2007-12-27 | 2011-08-17 | 国立大学法人東北大学 | Si結晶インゴットの製造方法 |
CN103154288A (zh) | 2010-05-20 | 2013-06-12 | 道康宁公司 | 制备铝-硅合金的方法和*** |
JP2012106886A (ja) * | 2010-11-17 | 2012-06-07 | Nippon Steel Materials Co Ltd | 金属シリコンの凝固精製方法及び装置 |
CN102275931B (zh) * | 2011-07-05 | 2013-05-29 | 兰州大学 | 氢氧焰等离子体提纯冶金级多晶硅粉体的方法 |
WO2013010575A1 (en) * | 2011-07-18 | 2013-01-24 | Abb Research Ltd | A method and a control system for controlling a melting process |
CN103266350B (zh) * | 2013-05-31 | 2015-08-12 | 大连理工大学 | 多晶硅铸锭硅真空固液分离方法及分离设备 |
CN103266349B (zh) * | 2013-05-31 | 2015-07-15 | 大连理工大学 | 高纯中空硅材料、多晶硅铸锭硅真空固液分离方法及设备 |
JP6401051B2 (ja) * | 2014-12-26 | 2018-10-03 | 京セラ株式会社 | 多結晶シリコンインゴットの製造方法 |
RU2632827C2 (ru) * | 2015-12-08 | 2017-10-10 | Общество с ограниченной ответственностью "Современные химические и металлургические технологии" (ООО "СХИМТ") | Устройство для рафинирования кремния |
CN107255572B (zh) * | 2017-05-12 | 2020-04-21 | 宜昌南玻硅材料有限公司 | 半熔铸锭工艺中硅锭的少子寿命抽样方法 |
JP6919633B2 (ja) | 2018-08-29 | 2021-08-18 | 信越半導体株式会社 | 単結晶育成方法 |
EP3847131B1 (de) * | 2019-04-30 | 2023-03-01 | Wacker Chemie AG | Verfahren zur raffination von rohsilicium-schmelzen mittels eines partikulären mediators |
CN111675222B (zh) * | 2020-07-13 | 2022-08-09 | 昆明理工大学 | 一种利用低品位硅石生产工业硅的方法 |
EP4082966A1 (en) * | 2021-04-26 | 2022-11-02 | Ferroglobe Innovation, S.L. | Method for obtaining purified silicon metal |
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-
2008
- 2008-03-13 CA CA2695393A patent/CA2695393C/en active Active
- 2008-03-13 JP JP2010524312A patent/JP2010538952A/ja not_active Withdrawn
- 2008-03-13 AU AU2008299523A patent/AU2008299523A1/en not_active Abandoned
- 2008-03-13 MX MX2010002728A patent/MX2010002728A/es active IP Right Grant
- 2008-03-13 ES ES08733596T patent/ES2530720T3/es active Active
- 2008-03-13 CN CN200880106298.7A patent/CN101868422B/zh active Active
- 2008-03-13 BR BRPI0816972 patent/BRPI0816972A2/pt not_active IP Right Cessation
- 2008-03-13 EP EP08733596.4A patent/EP2212249B1/en active Active
- 2008-03-13 EA EA201070358A patent/EA017480B1/ru not_active IP Right Cessation
- 2008-03-13 MY MYPI2010000616A patent/MY143807A/en unknown
- 2008-03-13 KR KR1020107006648A patent/KR20100061510A/ko not_active Application Discontinuation
- 2008-03-13 UA UAA201004264A patent/UA97691C2/ru unknown
- 2008-03-13 US US12/047,913 patent/US7727502B2/en active Active
- 2008-03-13 WO PCT/CA2008/000492 patent/WO2009033255A1/en active Application Filing
-
2010
- 2010-02-05 ZA ZA2010/00882A patent/ZA201000882B/en unknown
- 2010-04-08 NO NO20100512A patent/NO20100512L/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
CA2695393C (en) | 2012-01-03 |
CN101868422B (zh) | 2013-10-09 |
EA017480B1 (ru) | 2012-12-28 |
CN101868422A (zh) | 2010-10-20 |
MY143807A (en) | 2011-07-15 |
WO2009033255A1 (en) | 2009-03-19 |
UA97691C2 (ru) | 2012-03-12 |
CA2695393A1 (en) | 2009-03-19 |
ZA201000882B (en) | 2011-04-28 |
ES2530720T3 (es) | 2015-03-04 |
AU2008299523A1 (en) | 2009-03-19 |
EA201070358A1 (ru) | 2010-08-30 |
EP2212249A4 (en) | 2012-08-15 |
US20090074648A1 (en) | 2009-03-19 |
BRPI0816972A2 (pt) | 2015-03-24 |
NO20100512L (no) | 2010-04-08 |
US7727502B2 (en) | 2010-06-01 |
EP2212249B1 (en) | 2015-01-14 |
JP2010538952A (ja) | 2010-12-16 |
EP2212249A1 (en) | 2010-08-04 |
KR20100061510A (ko) | 2010-06-07 |
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