JPS5637671A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5637671A JPS5637671A JP11332579A JP11332579A JPS5637671A JP S5637671 A JPS5637671 A JP S5637671A JP 11332579 A JP11332579 A JP 11332579A JP 11332579 A JP11332579 A JP 11332579A JP S5637671 A JPS5637671 A JP S5637671A
- Authority
- JP
- Japan
- Prior art keywords
- region
- coated
- film
- type
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
Abstract
PURPOSE:To prevent the deep intrusion of metal in a semiconductor device by froming an impurity region having the same conductivity type as the surface of a semiconductor region but a density of higher than 3X10<21> pieces/cm<3> in the surface portion of the semiconductor region when mounting an aluminum wiring metal on the surface of the region. CONSTITUTION:An SiO2 film 2 having a sufficient thickness as a mask for an ion implantation is coated on a P type Si substrate 1, and unnecessary portion is etched and removed therefrom. Then, a thin SiO2 film 4 is coated on the portion removed with the film 2, As impurity ions are implanted, the film is driven in, and an N type region 3 having a depth of 0.5mum or the like is formed therein. Thereafter, P impurity ions are implanted to the region at which aluminum electrode is mounted of the region 3, and a region 8 having a density of 3X10<21> pieces/cm<3> or higher and a depth of 0.2-0.3mum is formed therein. Then, an aluminum layer is coated on the entire surface, unnecessary portion is etched and removed, as an electrode wire 7 making contact with the region 8, is annealed at 450 deg.C in N2 atmosphere for 30- 60min, and an ohmic contact having no intrusion of aluminun into the the region 3 can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11332579A JPS5637671A (en) | 1979-09-04 | 1979-09-04 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11332579A JPS5637671A (en) | 1979-09-04 | 1979-09-04 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5637671A true JPS5637671A (en) | 1981-04-11 |
| JPS6333302B2 JPS6333302B2 (en) | 1988-07-05 |
Family
ID=14609369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11332579A Granted JPS5637671A (en) | 1979-09-04 | 1979-09-04 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5637671A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5082378A (en) * | 1989-09-27 | 1992-01-21 | Hewlett-Packard Company | Optical fiber connector and method for its manufacture |
-
1979
- 1979-09-04 JP JP11332579A patent/JPS5637671A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5082378A (en) * | 1989-09-27 | 1992-01-21 | Hewlett-Packard Company | Optical fiber connector and method for its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6333302B2 (en) | 1988-07-05 |
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