ES8404570A1 - Metodo de fabricacion de una culula solar de sulfuro de cadmio. - Google Patents

Metodo de fabricacion de una culula solar de sulfuro de cadmio.

Info

Publication number
ES8404570A1
ES8404570A1 ES520376A ES520376A ES8404570A1 ES 8404570 A1 ES8404570 A1 ES 8404570A1 ES 520376 A ES520376 A ES 520376A ES 520376 A ES520376 A ES 520376A ES 8404570 A1 ES8404570 A1 ES 8404570A1
Authority
ES
Spain
Prior art keywords
copper
solar cells
layer
cadmium sulphide
sulphide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES520376A
Other languages
English (en)
Other versions
ES520376A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Prutec Ltd
Original Assignee
Prutec Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Prutec Ltd filed Critical Prutec Ltd
Publication of ES520376A0 publication Critical patent/ES520376A0/es
Publication of ES8404570A1 publication Critical patent/ES8404570A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
    • H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

METODO DE FABRICACION DE UNA CELULA SOLAR DE SULFURO DE CADMIO.SE FORMA UNA CELULA CON UN SUSTRATO DE VIDRIO (10), UN CONTACTO FRONTAL (12), UNA CAPA DE SULFURO DE CADMIO (14), Y UNA CAPA DE COBRE (16). LA UNION ENTRE AMBAS CAPAS ES FOTOVOLTAICA. PARA FORMAR UN CONTACTO SOBRE LA CAPA DE SULFURO DE COBRE, SE DEPOSITA EN FASE DE VAPOR SOBRE ELLA UNA CAPA MEZCLADA DE COBRE Y OXIDO DE COBRE. SE REALIZA POSTERIORMENTE UN TRATAMIENTO TERMICO PARA OPTIMIZAR EL RENDIMIENTO ELECTRICO DE LA CELULA.
ES520376A 1982-03-08 1983-03-07 Metodo de fabricacion de una culula solar de sulfuro de cadmio. Expired ES8404570A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP82301152A EP0091998A1 (en) 1982-03-08 1982-03-08 Cadmium sulphide solar cells

Publications (2)

Publication Number Publication Date
ES520376A0 ES520376A0 (es) 1984-04-16
ES8404570A1 true ES8404570A1 (es) 1984-04-16

Family

ID=8189594

Family Applications (1)

Application Number Title Priority Date Filing Date
ES520376A Expired ES8404570A1 (es) 1982-03-08 1983-03-07 Metodo de fabricacion de una culula solar de sulfuro de cadmio.

Country Status (16)

Country Link
US (1) US4463215A (es)
EP (1) EP0091998A1 (es)
JP (1) JPS58212185A (es)
KR (1) KR840004310A (es)
AR (1) AR230897A1 (es)
AU (1) AU1212583A (es)
BR (1) BR8301111A (es)
CA (1) CA1194970A (es)
DK (1) DK100983A (es)
ES (1) ES8404570A1 (es)
GR (1) GR77860B (es)
IL (1) IL68061A0 (es)
NO (1) NO830781L (es)
NZ (1) NZ203464A (es)
ZA (1) ZA831566B (es)
ZW (1) ZW6083A1 (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1207421A (en) * 1983-11-14 1986-07-08 Ottilia F. Toth High efficiency stable cds cu.sub.2s solar cells manufacturing process using thick film methodology
US4666569A (en) * 1984-12-28 1987-05-19 Standard Oil Commercial Development Company Method of making multilayer ohmic contact to thin film p-type II-VI semiconductor
DE3542116A1 (de) * 1985-11-28 1987-06-04 Nukem Gmbh Photovoltaische zelle
DE3542111A1 (de) * 1985-11-28 1987-06-04 Nukem Gmbh Verfahren zur durchfuehrung eines glimmprozesses
GB2196650A (en) * 1986-10-27 1988-05-05 Prutec Ltd Cadmium sulphide solar cells
JPH01111380A (ja) * 1987-10-23 1989-04-28 Sumitomo Metal Ind Ltd 光起電力素子及びその製造方法
US6169246B1 (en) 1998-09-08 2001-01-02 Midwest Research Institute Photovoltaic devices comprising zinc stannate buffer layer and method for making

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104420A (en) * 1975-08-25 1978-08-01 Photon Power, Inc. Photovoltaic cell
DE2732933C2 (de) * 1977-07-21 1984-11-15 Bloss, Werner H., Prof. Dr.-Ing., 7065 Winterbach Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-Heteroübergang
US4267398A (en) * 1979-05-29 1981-05-12 University Of Delaware Thin film photovoltaic cells
US4239553A (en) * 1979-05-29 1980-12-16 University Of Delaware Thin film photovoltaic cells having increased durability and operating life and method for making same
US4318938A (en) * 1979-05-29 1982-03-09 The University Of Delaware Method for the continuous manufacture of thin film solar cells
US4251286A (en) * 1979-09-18 1981-02-17 The University Of Delaware Thin film photovoltaic cells having blocking layers
US4260428A (en) * 1980-03-05 1981-04-07 Ses, Incorporated Photovoltaic cell

Also Published As

Publication number Publication date
BR8301111A (pt) 1983-11-22
NO830781L (no) 1983-09-09
ES520376A0 (es) 1984-04-16
US4463215A (en) 1984-07-31
KR840004310A (ko) 1984-10-10
AU1212583A (en) 1983-09-15
GR77860B (es) 1984-09-25
AR230897A1 (es) 1984-07-31
JPS58212185A (ja) 1983-12-09
CA1194970A (en) 1985-10-08
DK100983A (da) 1983-09-09
ZW6083A1 (en) 1983-05-25
ZA831566B (en) 1983-11-30
DK100983D0 (da) 1983-02-28
NZ203464A (en) 1985-07-12
IL68061A0 (en) 1983-06-15
EP0091998A1 (en) 1983-10-26

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