KR970060538A - Backside depressed electrode type solar cell - Google Patents

Backside depressed electrode type solar cell Download PDF

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Publication number
KR970060538A
KR970060538A KR1019960000303A KR19960000303A KR970060538A KR 970060538 A KR970060538 A KR 970060538A KR 1019960000303 A KR1019960000303 A KR 1019960000303A KR 19960000303 A KR19960000303 A KR 19960000303A KR 970060538 A KR970060538 A KR 970060538A
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South Korea
Prior art keywords
solar cell
layer
type solar
backside
electrode type
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KR1019960000303A
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Korean (ko)
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KR100378343B1 (en
Inventor
김동섭
에이. 유 에봉
이수홍
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김광호
삼성전자 주식회사
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Priority to KR1019960000303A priority Critical patent/KR100378343B1/en
Publication of KR970060538A publication Critical patent/KR970060538A/en
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Publication of KR100378343B1 publication Critical patent/KR100378343B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은 피라미드 구조가 형성되어 있는 반도체 기판 전면에는 산화막이 형성되어 있고, 평탄화된 구조를 갖는 반도체 기판 후면내의 하나이상의 홈에 p+층과 n+층이 교대로 형성되어 있고, 상기 p+층과 n+층 상부에 전도성 금속으로 이루어진 후면전극이 형성되어 있는 것을 특징으로 한느 후면 함몰전극형 태양전지를 제공한다. 본 발명에 딸른 태양전지는 반도체 기판 후면내에 깊게 파여진 홈에 전극을 형성하므로 종래의 후면 전극형 태양전지보다 전극으로 수집되기 위한 캐리아 이동거리가 짧아짐으로써 캐리아의 수집효율이 증대되며, 효과적인 후면전계가 형성된다.This invention may, pyramidal structure is a semiconductor substrate front surface and the oxide film is formed in forming, is formed of a p + layer on at least one groove in the back of a semiconductor substrate having a flattened structure and the n + layers are alternately, and the p + layer And a back electrode made of a conductive metal is formed on the n + layer. Since the solar cell attached to the present invention forms an electrode in the groove deeply dug in the back surface of the semiconductor substrate, the carrier movement distance for collecting the electrode as compared with the conventional rear electrode type solar cell is shortened to increase the collection efficiency of the carrier, A rear surface electric field is formed.

Description

후면 함몰전극형 태양전지Backside depressed electrode type solar cell

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2a도는 본 발명의 후면 함몰전극형 태양전지를 나타낸다.FIG. 2 (a) shows a backside depressed electrode type solar cell of the present invention.

제2b도는 본 발명의 후면 함몰전극형 태양전지에서 후면전극의 모양을 나타낸 도면이다.FIG. 2b is a view showing the shape of the rear electrode in the rear-side depressed electrode type solar cell of the present invention.

Claims (4)

피라미드 구조가 형성되어 있는 반도체 기판 전면에는 산화막이 형성되어 있고, 평탄화된 구조를 갖는 반도체 기판 후면내의 하나 이상의 홈에 p+층과 n+층이 교대로 형성되어 있고, 상기 p+층과 n+층 상부에 전도성 근속으로 이루어진 후면전극이 형성되어 있는 것을 특징으로 하는 후면 함몰전극형 태양전지.The p + layer and the n + layer are alternately formed in at least one groove in the rear surface of the semiconductor substrate having a planarized structure, and the p + layer and the n + And a rear electrode made of a conductive fired material is formed on the top of the layer. 제1항에 있어서, 상기 반도체 기판 전면의 산화막 하부에 n+층이 더 형성되어 있는 것을 특징으로 하는 후면 함몰전극형 태양전지.The backside depressed electrode type solar cell according to claim 1, wherein an n + layer is further formed under the oxide film on the front surface of the semiconductor substrate. 제1항에 있엇, 상기 전도성 금속이 니켈, 구리, 은, 티타늄 및 팔라듐으로 이루어진 군으로부터 선택된 적어도 하나인 것을 특징으로 하는 후면 함몰전극형 태양전지.The backside depressed electrode type solar cell according to claim 1, wherein the conductive metal is at least one selected from the group consisting of nickel, copper, silver, titanium, and palladium. 제1항에 있어서, 상기 홈의 깊이가 5~100㎛, 폭이 5~40㎛인 것을 특징으로 하는 후면 함몰전극형 태양전지.The backside depressed electrode type solar cell according to claim 1, wherein the groove has a depth of 5 to 100 탆 and a width of 5 to 40 탆. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960000303A 1996-01-09 1996-01-09 Backside recess electrode type solar cell KR100378343B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960000303A KR100378343B1 (en) 1996-01-09 1996-01-09 Backside recess electrode type solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960000303A KR100378343B1 (en) 1996-01-09 1996-01-09 Backside recess electrode type solar cell

Publications (2)

Publication Number Publication Date
KR970060538A true KR970060538A (en) 1997-08-12
KR100378343B1 KR100378343B1 (en) 2003-07-18

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100852700B1 (en) * 2002-04-03 2008-08-19 삼성에스디아이 주식회사 High efficient solar cell and fabrication method thereof
KR100863951B1 (en) * 2002-05-29 2008-10-16 삼성에스디아이 주식회사 Solar cell and fabrication method thereof

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0820684D0 (en) * 2008-11-12 2008-12-17 Silicon Cpv Plc Photovoltaic solar cells
KR101549555B1 (en) * 2009-01-30 2015-09-04 엘지전자 주식회사 Semiconductor layer doping method Back contact solar cell by using the same method and Manufacturing method thereof
DE102010026289B4 (en) * 2010-07-06 2014-10-30 Sameday Media Gmbh Solar cell and process
US9559228B2 (en) 2011-09-30 2017-01-31 Sunpower Corporation Solar cell with doped groove regions separated by ridges

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100852700B1 (en) * 2002-04-03 2008-08-19 삼성에스디아이 주식회사 High efficient solar cell and fabrication method thereof
KR100863951B1 (en) * 2002-05-29 2008-10-16 삼성에스디아이 주식회사 Solar cell and fabrication method thereof

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