JPS55124278A - Avalanche photodiode - Google Patents

Avalanche photodiode

Info

Publication number
JPS55124278A
JPS55124278A JP3282379A JP3282379A JPS55124278A JP S55124278 A JPS55124278 A JP S55124278A JP 3282379 A JP3282379 A JP 3282379A JP 3282379 A JP3282379 A JP 3282379A JP S55124278 A JPS55124278 A JP S55124278A
Authority
JP
Japan
Prior art keywords
recess
substrate
avalanche photodiode
semiconductor
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3282379A
Other languages
Japanese (ja)
Other versions
JPS6358382B2 (en
Inventor
Hiroshi Kanbe
Hiroaki Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3282379A priority Critical patent/JPS55124278A/en
Publication of JPS55124278A publication Critical patent/JPS55124278A/en
Publication of JPS6358382B2 publication Critical patent/JPS6358382B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To eliminate generation of avalanche multiplication noise of an avalanche photodiode by forming a recess on a semiconductor substrate and forming a semiconductor region from the inner surface side of the recess toward the semiconductor region to form a pn-junction. CONSTITUTION:A recess 3 is formed on a semiconductor substrate 1, and a semiconductor region 5 having opposite conducting type to the substrate 1 and low specific resistance and extended from the periphery of the recess 3 on the surface opposite to the semiconductor layer 2 side of the substrate 1 and the inner surface of the recess 3 toward the layer 2 side is formed thereon. Further, metal electrodes 7, 9 are formed to complete an avalanche photodiode.
JP3282379A 1979-03-20 1979-03-20 Avalanche photodiode Granted JPS55124278A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3282379A JPS55124278A (en) 1979-03-20 1979-03-20 Avalanche photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3282379A JPS55124278A (en) 1979-03-20 1979-03-20 Avalanche photodiode

Publications (2)

Publication Number Publication Date
JPS55124278A true JPS55124278A (en) 1980-09-25
JPS6358382B2 JPS6358382B2 (en) 1988-11-15

Family

ID=12369540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3282379A Granted JPS55124278A (en) 1979-03-20 1979-03-20 Avalanche photodiode

Country Status (1)

Country Link
JP (1) JPS55124278A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5775761U (en) * 1980-10-29 1982-05-11
JPS5792878A (en) * 1980-10-09 1982-06-09 Western Electric Co Semiconductor photodiode
JPS58158978A (en) * 1982-03-16 1983-09-21 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photodetector
JPS6218075A (en) * 1985-07-17 1987-01-27 Agency Of Ind Science & Technol Photoelectric conversion device
US4656494A (en) * 1984-05-31 1987-04-07 Fujitsu Limited Avalanche multiplication photodiode having a buried structure
US4814847A (en) * 1986-11-21 1989-03-21 Bell Communications Research, Inc. Ingaas semiconductor structures
US6329679B1 (en) * 1998-06-29 2001-12-11 Hyundai Electronics Industries Co., Ltd. Photodiode with increased photocollection area for image sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108794A (en) * 1977-03-04 1978-09-21 Nec Corp Photo detector

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108794A (en) * 1977-03-04 1978-09-21 Nec Corp Photo detector

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792878A (en) * 1980-10-09 1982-06-09 Western Electric Co Semiconductor photodiode
JPS5775761U (en) * 1980-10-29 1982-05-11
JPS58158978A (en) * 1982-03-16 1983-09-21 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photodetector
JPH0241185B2 (en) * 1982-03-16 1990-09-14 Nippon Telegraph & Telephone
US4656494A (en) * 1984-05-31 1987-04-07 Fujitsu Limited Avalanche multiplication photodiode having a buried structure
JPS6218075A (en) * 1985-07-17 1987-01-27 Agency Of Ind Science & Technol Photoelectric conversion device
US4814847A (en) * 1986-11-21 1989-03-21 Bell Communications Research, Inc. Ingaas semiconductor structures
US6329679B1 (en) * 1998-06-29 2001-12-11 Hyundai Electronics Industries Co., Ltd. Photodiode with increased photocollection area for image sensor
US6723580B2 (en) 1998-06-29 2004-04-20 Hyundai Electronics Industries Co., Ltd. Method of forming a photodiode for an image sensor
US6787386B2 (en) 1998-06-29 2004-09-07 Hynix Semiconductor, Inc. Method of forming a photodiode for an image sensor

Also Published As

Publication number Publication date
JPS6358382B2 (en) 1988-11-15

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