KR970060078A - 자기저항층 및 하부 금속층을 갖는 자기저항 효과 소자 - Google Patents

자기저항층 및 하부 금속층을 갖는 자기저항 효과 소자 Download PDF

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KR970060078A
KR970060078A KR1019970002109A KR19970002109A KR970060078A KR 970060078 A KR970060078 A KR 970060078A KR 1019970002109 A KR1019970002109 A KR 1019970002109A KR 19970002109 A KR19970002109 A KR 19970002109A KR 970060078 A KR970060078 A KR 970060078A
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layer
magnetoresistive element
magnetoresistive
element according
ferromagnetic
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KR1019970002109A
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KR100220106B1 (ko
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히데후미 야마모토
가즈히코 하야시
마사후미 나카다
준-이찌 후지카타
구니히코 이시하라
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가네꼬 히사시
닛폰 덴키 가부시키가이샤
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
    • G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
    • G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
    • G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/40—Protective measures on heads, e.g. against excessive temperature 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/455—Arrangements for functional testing of heads; Measuring arrangements for heads

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)

Abstract

본 발명의 자기저항 소자에서, 하부 금속층(2)이 기판(1)위에 형성되고, 자기저항층(3)이 하부 금속층위에 형성된다. 하부 금속층은 약 0.1 내지 3.0㎚의 두께를 가진다.

Description

자기저항층 및 하부 금속층을 갖는 자기저항 효과 소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제7도는 본 발명의 실시예가 적용되는 차폐-형태(shield-type)의 MR헤드를 도시한 단면도.

Claims (19)

  1. 기판(1)과; 상기 기판위에 형성되고, 약 0.1 내지 3.0㎚의 두께를 가지는 하부 금속층(2) 및; 상기 하부 금속층위에 형성된 자기저항층(3)을 포함하는 것을 특징으로 하는 자기저항 소자.
  2. 제1항에 있어서, 상기 하부 금속층은 Al, Pt, Be, Cr, Fe, W 및 Y 중 하나로 제조되는 것을 특징으로 하는 자기저항 소자.
  3. 제1항에 있어서, 상기 자기저항층은 단일 자기저항성층을 포함하는 것을 특징으로 하는 자기저항 소자.
  4. 제3항에 있어서, 상기 단일 자기저항층은 NiFe로 제조되고 약 30㎚의 두께를 가지는 것을 특징으로 하는 자기저항 소자.
  5. 제1항에 있어서, 상기 자기저항층은 강자성 층과 비자성 층을 포함하는 하나이상의 주기를 포함하는 것을 특징으로 하는 자기저항 소자.
  6. 제5항에 있어서, 상기 강자성층은 Fe, Co, Ni 및 그들의 합금중 하나로 제조되는 것을 특징으로 하는 자기저항 소자.
  7. 제5항에 있어서, 상기 강자성층은 약 1 내지 30㎚ 두께인 것을 특징으로 하는 자기저항 소자.
  8. 제5항에 있어서, 상기 비자기층은 Cu, Au, Ag 및 이들의 합금중 하나로 제조되는 것을 특징으로 하는 자기저항 소자.
  9. 제1항에 있어서, 상기 자기저항층은 비 강자성층, 제1강자성 층, 비자지층 및 제2강자성층을 포함하는 하나이상의 주기를 포함하는 것을 특징으로 하는 자기저항 소자.
  10. 제9항에 있어서, 상기 강자성층은 Fe, Co, Ni 및 이들의 합금중 어느 하나로서 제조되는 것을 특징으로 하는 자기저항 소자.
  11. 제9항에 있어서, 상기 강자성층은 약 1 내지 30㎚의 두께를 가지는 것을 특징으로 하는 자기저항 소자.
  12. 제9항에 있어서, 상기 비자성층은 Cu, Au, Ag 및 이들의 합금중 어느 하나로서 제조되는 것을 특징으로 하는 자기저항 소자.
  13. 제9항에 있어서, 상기 반강자성층은 FeMn, NiMn, PtMn, PdMn, NiO, CoO, FeO 및 이들의 합금중 어느 하나로서 제조되는 것을 특징으로 하는 자기저항 소자.
  14. 제1항에 있어서, 상기 자기저항층은 X선 회절 측정법에 의해 5°이하의 진동곡선의 FWHM을 가지는 것을 특징으로 하는 자기저항 소자.
  15. 기판(1)과; Ff, Zr 및 Ta 중 어느하나로서 제조되어서 약 0.1 내지 10㎚의 두께를 가지며 기판에 형성된 하부 금속층(2)과; NiO, CoO, NiCoO 및 NiO/CoO 중 어느 하나로서 제조된 반강자성층으로 이루어진 적어도 하나의 피리어드와, 제1강자성층과, 비자성층과 제2강자성층을 포함하며 하부 금속층에 형성된 자기저항층(3)가; 상기 반강자성층과 하부 금속층 사이에 있는 약 0.1 내지 3㎚ 두께의 Fe층을 포함하는 것을 특징으로 하는 자기저항 소자.
  16. 제15항에 있어서, 제1 및 제2강자성층은 각각 Fe, Co, Ni 및 이들의 합금중 어느 하나로서 제조되는 것을 특징으로 하는 자기저항 소자.
  17. 제15항에 있어서, 제1 및 제2강자성층은 각각 약 1 내지 30㎚ 두께를 가지는 것을 특징으로 하는 자기저항 소자.
  18. 제15항에 있어서, 상기 비자성층은 Cu, Au, Ag 및 이들의 합금중 어느 하나로서 제조되는 것을 특징으로 하는 자기저항 소자.
  19. 제15항에 있어서, 상기 자기저항층은 X선 회절 측정법에 의해 5° 이하의 진동곡선의 FWHM을 가지는 것을 특징으로 하는 자기저항 소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970002109A 1996-01-26 1997-01-25 자기저항층 및 하부 금속층을 갖는 자기저항 효과 소자 KR100220106B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8011572A JPH09205234A (ja) 1996-01-26 1996-01-26 磁気抵抗効果素子及び磁気抵抗効果センサ
JP96-011572 1996-01-26

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KR970060078A true KR970060078A (ko) 1997-08-12
KR100220106B1 KR100220106B1 (ko) 1999-09-01

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US6147843A (en) 2000-11-14
KR100220106B1 (ko) 1999-09-01
JPH09205234A (ja) 1997-08-05

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