KR970060078A - 자기저항층 및 하부 금속층을 갖는 자기저항 효과 소자 - Google Patents
자기저항층 및 하부 금속층을 갖는 자기저항 효과 소자 Download PDFInfo
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- KR970060078A KR970060078A KR1019970002109A KR19970002109A KR970060078A KR 970060078 A KR970060078 A KR 970060078A KR 1019970002109 A KR1019970002109 A KR 1019970002109A KR 19970002109 A KR19970002109 A KR 19970002109A KR 970060078 A KR970060078 A KR 970060078A
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- South Korea
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- layer
- magnetoresistive element
- magnetoresistive
- element according
- ferromagnetic
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- 239000002184 metal Substances 0.000 title claims abstract 10
- 229910052751 metal Inorganic materials 0.000 title claims abstract 10
- 239000000758 substrate Substances 0.000 claims abstract 5
- 230000005294 ferromagnetic effect Effects 0.000 claims 12
- 229910045601 alloy Inorganic materials 0.000 claims 7
- 239000000956 alloy Substances 0.000 claims 7
- 229910052742 iron Inorganic materials 0.000 claims 4
- 230000005290 antiferromagnetic effect Effects 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 3
- 229910052737 gold Inorganic materials 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 229910052709 silver Inorganic materials 0.000 claims 3
- 238000002441 X-ray diffraction Methods 0.000 claims 2
- 229910015136 FeMn Inorganic materials 0.000 claims 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims 1
- 229910003289 NiMn Inorganic materials 0.000 claims 1
- -1 PdMn Inorganic materials 0.000 claims 1
- 229910019041 PtMn Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
- G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
- G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
- G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/40—Protective measures on heads, e.g. against excessive temperature
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/455—Arrangements for functional testing of heads; Measuring arrangements for heads
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
Abstract
본 발명의 자기저항 소자에서, 하부 금속층(2)이 기판(1)위에 형성되고, 자기저항층(3)이 하부 금속층위에 형성된다. 하부 금속층은 약 0.1 내지 3.0㎚의 두께를 가진다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제7도는 본 발명의 실시예가 적용되는 차폐-형태(shield-type)의 MR헤드를 도시한 단면도.
Claims (19)
- 기판(1)과; 상기 기판위에 형성되고, 약 0.1 내지 3.0㎚의 두께를 가지는 하부 금속층(2) 및; 상기 하부 금속층위에 형성된 자기저항층(3)을 포함하는 것을 특징으로 하는 자기저항 소자.
- 제1항에 있어서, 상기 하부 금속층은 Al, Pt, Be, Cr, Fe, W 및 Y 중 하나로 제조되는 것을 특징으로 하는 자기저항 소자.
- 제1항에 있어서, 상기 자기저항층은 단일 자기저항성층을 포함하는 것을 특징으로 하는 자기저항 소자.
- 제3항에 있어서, 상기 단일 자기저항층은 NiFe로 제조되고 약 30㎚의 두께를 가지는 것을 특징으로 하는 자기저항 소자.
- 제1항에 있어서, 상기 자기저항층은 강자성 층과 비자성 층을 포함하는 하나이상의 주기를 포함하는 것을 특징으로 하는 자기저항 소자.
- 제5항에 있어서, 상기 강자성층은 Fe, Co, Ni 및 그들의 합금중 하나로 제조되는 것을 특징으로 하는 자기저항 소자.
- 제5항에 있어서, 상기 강자성층은 약 1 내지 30㎚ 두께인 것을 특징으로 하는 자기저항 소자.
- 제5항에 있어서, 상기 비자기층은 Cu, Au, Ag 및 이들의 합금중 하나로 제조되는 것을 특징으로 하는 자기저항 소자.
- 제1항에 있어서, 상기 자기저항층은 비 강자성층, 제1강자성 층, 비자지층 및 제2강자성층을 포함하는 하나이상의 주기를 포함하는 것을 특징으로 하는 자기저항 소자.
- 제9항에 있어서, 상기 강자성층은 Fe, Co, Ni 및 이들의 합금중 어느 하나로서 제조되는 것을 특징으로 하는 자기저항 소자.
- 제9항에 있어서, 상기 강자성층은 약 1 내지 30㎚의 두께를 가지는 것을 특징으로 하는 자기저항 소자.
- 제9항에 있어서, 상기 비자성층은 Cu, Au, Ag 및 이들의 합금중 어느 하나로서 제조되는 것을 특징으로 하는 자기저항 소자.
- 제9항에 있어서, 상기 반강자성층은 FeMn, NiMn, PtMn, PdMn, NiO, CoO, FeO 및 이들의 합금중 어느 하나로서 제조되는 것을 특징으로 하는 자기저항 소자.
- 제1항에 있어서, 상기 자기저항층은 X선 회절 측정법에 의해 5°이하의 진동곡선의 FWHM을 가지는 것을 특징으로 하는 자기저항 소자.
- 기판(1)과; Ff, Zr 및 Ta 중 어느하나로서 제조되어서 약 0.1 내지 10㎚의 두께를 가지며 기판에 형성된 하부 금속층(2)과; NiO, CoO, NiCoO 및 NiO/CoO 중 어느 하나로서 제조된 반강자성층으로 이루어진 적어도 하나의 피리어드와, 제1강자성층과, 비자성층과 제2강자성층을 포함하며 하부 금속층에 형성된 자기저항층(3)가; 상기 반강자성층과 하부 금속층 사이에 있는 약 0.1 내지 3㎚ 두께의 Fe층을 포함하는 것을 특징으로 하는 자기저항 소자.
- 제15항에 있어서, 제1 및 제2강자성층은 각각 Fe, Co, Ni 및 이들의 합금중 어느 하나로서 제조되는 것을 특징으로 하는 자기저항 소자.
- 제15항에 있어서, 제1 및 제2강자성층은 각각 약 1 내지 30㎚ 두께를 가지는 것을 특징으로 하는 자기저항 소자.
- 제15항에 있어서, 상기 비자성층은 Cu, Au, Ag 및 이들의 합금중 어느 하나로서 제조되는 것을 특징으로 하는 자기저항 소자.
- 제15항에 있어서, 상기 자기저항층은 X선 회절 측정법에 의해 5° 이하의 진동곡선의 FWHM을 가지는 것을 특징으로 하는 자기저항 소자.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8011572A JPH09205234A (ja) | 1996-01-26 | 1996-01-26 | 磁気抵抗効果素子及び磁気抵抗効果センサ |
JP96-011572 | 1996-01-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970060078A true KR970060078A (ko) | 1997-08-12 |
KR100220106B1 KR100220106B1 (ko) | 1999-09-01 |
Family
ID=11781646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019970002109A KR100220106B1 (ko) | 1996-01-26 | 1997-01-25 | 자기저항층 및 하부 금속층을 갖는 자기저항 효과 소자 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6147843A (ko) |
JP (1) | JPH09205234A (ko) |
KR (1) | KR100220106B1 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2970590B2 (ja) * | 1997-05-14 | 1999-11-02 | 日本電気株式会社 | 磁気抵抗効果素子並びにこれを用いた磁気抵抗効果センサ、磁気抵抗検出システム及び磁気記憶システム |
US6245450B1 (en) | 1997-11-17 | 2001-06-12 | Matsushita Electric Industrial Co., Ltd. | Exchange coupling film magnetoresistance effect device magnetoresistance effective head and method for producing magnetoresistance effect device |
US6301086B1 (en) * | 1998-11-12 | 2001-10-09 | Sumitomo Special Metals Co., Ltd. | Thin-film magnetic head supporting structure and method for manufacturing the same |
JP2001084530A (ja) * | 1999-09-16 | 2001-03-30 | Alps Electric Co Ltd | 磁気抵抗効果素子及びその製造方法 |
JP2002008210A (ja) * | 2000-06-19 | 2002-01-11 | Fujitsu Ltd | 磁気ヘッド製造方法 |
TW569195B (en) * | 2001-01-24 | 2004-01-01 | Matsushita Electric Ind Co Ltd | Micro-particle arranged body, its manufacturing method, and device using the same |
DE10327390B4 (de) * | 2003-06-18 | 2008-11-13 | Sensitec Gmbh | Anordnung zur Vermeidung von Elektromigration |
TWI394179B (zh) * | 2007-11-07 | 2013-04-21 | Nat Univ Chung Cheng | Structure and Method of Ultra - thin Ferromagnetic / Antiferromagnetic Coupling Thin Films |
JP5361201B2 (ja) * | 2008-01-30 | 2013-12-04 | 株式会社東芝 | 磁気抵抗効果素子の製造方法 |
JP5150284B2 (ja) | 2008-01-30 | 2013-02-20 | 株式会社東芝 | 磁気抵抗効果素子およびその製造方法 |
US9092071B2 (en) | 2008-02-13 | 2015-07-28 | Logitech Europe S.A. | Control device with an accelerometer system |
US20090295713A1 (en) * | 2008-05-30 | 2009-12-03 | Julien Piot | Pointing device with improved cursor control in-air and allowing multiple modes of operations |
Family Cites Families (23)
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DE3820475C1 (ko) * | 1988-06-16 | 1989-12-21 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De | |
US4988641A (en) * | 1989-10-10 | 1991-01-29 | Grumman Aerospace Corporation | Graphotaxially forming a photosensitive detector array |
US5206590A (en) * | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
MY108176A (en) * | 1991-02-08 | 1996-08-30 | Hitachi Global Storage Tech Netherlands B V | Magnetoresistive sensor based on oscillations in the magnetoresistance |
JPH088168B2 (ja) * | 1991-07-17 | 1996-01-29 | 日本電気株式会社 | 磁気抵抗効果素子薄膜およびその製造方法 |
US5341261A (en) * | 1991-08-26 | 1994-08-23 | International Business Machines Corporation | Magnetoresistive sensor having multilayer thin film structure |
JP3086731B2 (ja) * | 1991-09-30 | 2000-09-11 | 株式会社東芝 | 磁気抵抗効果型磁気ヘッド |
JP2725977B2 (ja) * | 1992-08-28 | 1998-03-11 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 磁気抵抗センサ及びその製造方法、磁気記憶システム |
JP2637360B2 (ja) * | 1992-10-30 | 1997-08-06 | 株式会社東芝 | 磁気抵抗効果素子 |
US5373238A (en) * | 1992-11-06 | 1994-12-13 | International Business Machines Corporation | Four layer magnetoresistance device and method for making a four layer magnetoresistance device |
JP3219329B2 (ja) * | 1993-02-03 | 2001-10-15 | 財団法人生産開発科学研究所 | 磁気抵抗効果素子 |
US5552949A (en) * | 1993-03-03 | 1996-09-03 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element with improved antiferromagnetic layer |
JPH06295818A (ja) * | 1993-04-09 | 1994-10-21 | Univ Nagoya | 多層磁気抵抗効果膜および磁気ヘッド |
JP3217625B2 (ja) * | 1993-12-22 | 2001-10-09 | ティーディーケイ株式会社 | 磁気抵抗効果型ヘッド |
US5452163A (en) * | 1993-12-23 | 1995-09-19 | International Business Machines Corporation | Multilayer magnetoresistive sensor |
JP2743806B2 (ja) * | 1993-12-28 | 1998-04-22 | 日本電気株式会社 | 磁気抵抗効果膜およびその製造方法 |
JPH07220246A (ja) * | 1994-02-04 | 1995-08-18 | Hitachi Ltd | 磁気抵抗効果膜、磁気抵抗効果型ヘッド及び磁気記録再生装置 |
JP2785678B2 (ja) * | 1994-03-24 | 1998-08-13 | 日本電気株式会社 | スピンバルブ膜およびこれを用いた再生ヘッド |
US5796560A (en) * | 1995-03-13 | 1998-08-18 | Kabushiki Kaisha Toshiba | Magnetoresistive head |
JP3625336B2 (ja) * | 1995-03-13 | 2005-03-02 | 株式会社東芝 | 磁気抵抗効果ヘッド |
US5583727A (en) * | 1995-05-15 | 1996-12-10 | International Business Machines Corporation | Multiple data layer magnetic recording data storage system with digital magnetoresistive read sensor |
US5585986A (en) * | 1995-05-15 | 1996-12-17 | International Business Machines Corporation | Digital magnetoresistive sensor based on the giant magnetoresistance effect |
JP3651619B2 (ja) * | 1995-06-29 | 2005-05-25 | 富士通株式会社 | 磁気抵抗効果型トランスデューサ及び磁気記録装置 |
-
1996
- 1996-01-26 JP JP8011572A patent/JPH09205234A/ja active Pending
-
1997
- 1997-01-24 US US08/788,507 patent/US6147843A/en not_active Expired - Lifetime
- 1997-01-25 KR KR1019970002109A patent/KR100220106B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US6147843A (en) | 2000-11-14 |
KR100220106B1 (ko) | 1999-09-01 |
JPH09205234A (ja) | 1997-08-05 |
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