US20010036697A1 - Method of fabricating semiconductor laser diode - Google Patents

Method of fabricating semiconductor laser diode Download PDF

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Publication number
US20010036697A1
US20010036697A1 US09/797,959 US79795901A US2001036697A1 US 20010036697 A1 US20010036697 A1 US 20010036697A1 US 79795901 A US79795901 A US 79795901A US 2001036697 A1 US2001036697 A1 US 2001036697A1
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layer
laser diode
semiconductor substrate
semiconductor laser
selective growth
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US09/797,959
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US6387746B2 (en
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Yukio Katoh
Hiroshi Wada
Keizo Takemasa
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Oki Electric Industry Co Ltd
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Assigned to OKI ELECTRIC INDUSTRY CO., LTD. reassignment OKI ELECTRIC INDUSTRY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KATOH, YUKIO, TAKEMASA, KEIZO, WADA, HIROSHI
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth

Definitions

  • the invention relates to method of fabricating a semiconductor laser diode using selective growth.
  • strip-shaped masks for selective growth are formed on a semiconductor substrate. Then, using metal organic chemical vapor deposition (MOCVD), a lower clad layer, a multiple quantum well (MQW) active layer and an upper clad layer are formed between the selective growth masks in the stated order. With this method, not using etching, a ridge waveguide structure is fabricated.
  • MOCVD metal organic chemical vapor deposition
  • MQW multiple quantum well
  • such a method includes forming a mask layer on a semiconductor substrate and forming a ridge waveguide structure including an active layer on the semiconductor substrate by selective growth method using the mask layer.
  • the mask layer is formed to be along a direction with an angle to [011] direction of the semiconductor substrate
  • FIGS. 1 ( a ) to 1 ( c ) are sectional views illustrating a manufacturing process of the embodiment according to the invention.
  • FIG. 2 is a plan view of a selective growth mask for manufacturing a semiconductor laser diode according to the invention.
  • FIGS. 1 ( a )- 1 ( c ) and FIG. 2 are sectional views illustrating a manufacturing process of the embodiment according to the invention.
  • FIG. 2 is a plan view of a selective growth mask used for the invention.
  • a pair of strip-shaped selective growth masks 12 are formed on an n-InP substrate 10 which has a (100) surface.
  • An SiO 2 film is patterned by conventional photolithography so as to form the selective growth masks 12 .
  • the thickness of the selective growth masks 12 is 0.2 ⁇ m and the masks 12 are formed with 2 ⁇ m interval.
  • the selective growth masks 12 are formed to be along a direction with an angle ⁇ to [011] direction. Therefore, a laser resonator is formed along the direction with the angle ⁇ to [011] direction.
  • the angle ⁇ is, for example, 5 degrees.
  • an InGaAsP optical confinement layer 14 (600 ⁇ )
  • an MQW active layer 16 an InGaAsP optical confinement layer 18 (600 ⁇ )
  • a p-InP layer 20 (500 ⁇ ) are formed by MOCVD in the stated order.
  • the MQW active layer 16 comprises, for example, five layers of InGaAsP well and a layer of InGaAsP barrier. As a result, a ridge waveguide structure including an active layer is formed.
  • each layer grows to cover the under layer as shown in FIG. 1( a ).
  • the selective growth masks 12 are removed.
  • the ridge waveguide structure including the MQW active layer 16 is exposed to the air. Because side portions of the MQW active layer 16 are mostly covered with the upper optical confinement layer 18 , exposed portions of the MQW active layer are relatively small. Therefore, comparing to the conventional method, it is possible to reduce the surface state of the MQW active layer 16 .
  • p-InP clad layer 22 500 ⁇
  • p-InGaAsP etching stopper layer 24 200 ⁇
  • p-InP clad layer 26 3 ⁇ m
  • p-InGaAs contact layer 28 0.2 ⁇ m
  • an etching mask 30 is formed on the contact layer 28 .
  • An SiO 2 film is patterned by conventional photolithography so as to form the etching masks 30 .
  • the thickness of the etching masks 12 is 0.2 ⁇ m.
  • etching mask 30 As a mask, p-InGaAs contact layer 28 and the p-InP clad layer 26 are etched.
  • This etching is, for example, wet etching using etchant including chlorine.
  • etchant including chlorine.
  • a reverse mesa including the contact layer 28 and the p-InP clad layer 26 are formed on the ridge waveguide structure including the MQW active layer 18 .
  • the selective growth masks are formed to be along the direction with the angle ⁇ to [011] direction. Using this selective growth masks, each layer grows to cover the under layer one after the other. Therefore, side portions of the active layer are mostly covered with the upper grown layer so that portions of the active layer exposing to the air are relatively small. As a result, comparing to the conventional method, it is possible to reduce the surface state of the active layer.

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

A method of fabricating a semiconductor laser diode includes forming a mask layer on a semiconductor substrate and forming a ridge waveguide structure including an active layer on the semiconductor substrate by selective growth method using the mask layer. The mask layer is formed to be along a direction with an angle to [011] direction of the semiconductor substrate.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0001]
  • The invention relates to method of fabricating a semiconductor laser diode using selective growth. [0002]
  • 2. Description of the Related Art [0003]
  • Conventional method of semiconductor laser diode using selective growth is disclosed in Japanese patent application laid-open 6-260727 [0004]
  • According to the conventional method, strip-shaped masks for selective growth are formed on a semiconductor substrate. Then, using metal organic chemical vapor deposition (MOCVD), a lower clad layer, a multiple quantum well (MQW) active layer and an upper clad layer are formed between the selective growth masks in the stated order. With this method, not using etching, a ridge waveguide structure is fabricated. [0005]
  • However, according to the conventional method of fabricating a semiconductor laser diode, in a step for removing the selective growth mask, side walls of the ridge structure are exposed to the air. Although a top surface of the MQW active layer is covered with the upper clad layer, side portions of the active layer are exposed. Therefore, surface state is generated in the MQW active layer so that property of the semiconductor laser diode becomes worse. [0006]
    • SUMMARY OF THE INVENTION
  • It is therefore an object of the invention to provide a method of fabricating a semiconductor laser diode, which solve the above-described problem. [0007]
  • According to the present invention, such a method includes forming a mask layer on a semiconductor substrate and forming a ridge waveguide structure including an active layer on the semiconductor substrate by selective growth method using the mask layer. The mask layer is formed to be along a direction with an angle to [011] direction of the semiconductor substrate [0008]
  • Side portions of the active layer are mostly covered with the upper grown layer so that portions of the active layer exposing to the air are relatively small. Therefore, comparing to the conventional method, it is possible to reduce the surface state of the active layer.[0009]
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The objects and features of the present invention will become more apparent from the consideration of the following detailed description taken in conjunction with the accompanying drawings in which: [0010]
  • FIGS. [0011] 1(a) to 1(c) are sectional views illustrating a manufacturing process of the embodiment according to the invention.
  • FIG. 2 is a plan view of a selective growth mask for manufacturing a semiconductor laser diode according to the invention.[0012]
    • DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • The following will describe embodiments of the present invention with reference to the drawings. In the drawings, the size, the shape, and the mutual relationship in arrangement of each component are just roughly shown for the understanding of the present invention, so that the present invention is not limited to the exemplified embodiments. [0013]
  • With reference to FIGS. [0014] 1(a)-1(c) and FIG. 2, the embodiment of the invention is described. FIGS. 1(a) to 1(c) are sectional views illustrating a manufacturing process of the embodiment according to the invention. FIG. 2 is a plan view of a selective growth mask used for the invention.
  • First, as shown in FIG. 1([0015] a), a pair of strip-shaped selective growth masks 12 are formed on an n-InP substrate 10 which has a (100) surface. An SiO2 film is patterned by conventional photolithography so as to form the selective growth masks 12. For example, the thickness of the selective growth masks 12 is 0.2 μm and the masks 12 are formed with 2 μm interval.
  • As shown in FIG. 2, the [0016] selective growth masks 12 are formed to be along a direction with an angle θ to [011] direction. Therefore, a laser resonator is formed along the direction with the angle θ to [011] direction. The angle θ is, for example, 5 degrees.
  • Consequently, in a gap between the [0017] selective growth masks 12, an InGaAsP optical confinement layer 14 (600 Å), an MQW active layer 16, an InGaAsP optical confinement layer 18 (600 Å) and a p-InP layer 20 (500 Å) are formed by MOCVD in the stated order. The MQW active layer 16 comprises, for example, five layers of InGaAsP well and a layer of InGaAsP barrier. As a result, a ridge waveguide structure including an active layer is formed.
  • As described above, using the selective growth mask formed along the direction with the angle θ to [011] direction, each layer grows to cover the under layer as shown in FIG. 1([0018] a).
  • Consequently, the [0019] selective growth masks 12 are removed. In this step, the ridge waveguide structure including the MQW active layer 16 is exposed to the air. Because side portions of the MQW active layer 16 are mostly covered with the upper optical confinement layer 18, exposed portions of the MQW active layer are relatively small. Therefore, comparing to the conventional method, it is possible to reduce the surface state of the MQW active layer 16.
  • Then, as shown in FIG. 1([0020] b), on the whole surface, p-InP clad layer 22 (500 Å), p-InGaAsP etching stopper layer 24 (200 Å), p-InP clad layer 26 (3 μm), p-InGaAs contact layer 28 (0.2 μm) are formed by MOCVD in the stated order.
  • Consequently, an [0021] etching mask 30 is formed on the contact layer 28. An SiO2 film is patterned by conventional photolithography so as to form the etching masks 30. For example, the thickness of the etching masks 12 is 0.2 μm.
  • Consequently, using the [0022] etching mask 30 as a mask, p-InGaAs contact layer 28 and the p-InP clad layer 26 are etched. This etching is, for example, wet etching using etchant including chlorine. According to the etching, a reverse mesa including the contact layer 28 and the p-InP clad layer 26 are formed on the ridge waveguide structure including the MQW active layer 18.
  • Then, as shown in FIG. 1([0023] c), after removing the etching mask 30, polyimide layers 32 are formed on both side of the reverse mesa. Consequently, a P-type electrode 34 consisting of Au and Zn is formed on the contact layer 28. Also, an N-type electrode 36 consisting of Au, Ge and Ni is formed on the back surface of the substrate 10. According to the above-described steps, a semiconductor laser diode is manufactured.
  • According to the invention, the selective growth masks are formed to be along the direction with the angle θ to [011] direction. Using this selective growth masks, each layer grows to cover the under layer one after the other. Therefore, side portions of the active layer are mostly covered with the upper grown layer so that portions of the active layer exposing to the air are relatively small. As a result, comparing to the conventional method, it is possible to reduce the surface state of the active layer. [0024]

Claims (5)

What is claimed is:
1. A method of fabricating a semiconductor laser diode, comprising:
forming a mask layer on a semiconductor substrate, said mask layer is along a direction with an angle to [011] direction of said semiconductor substrate; and
forming a ridge waveguide structure including an active layer on said semiconductor substrate by selective growth method using said mask layer.
2. A method of fabricating a semiconductor laser diode according to
claim 1
, wherein said mask layer is formed on a (001) surface of said semiconductor substrate.
3. A method of fabricating a semiconductor laser diode according to
claim 2
, wherein said selective growth method is metal organic vapor deposition method.
4. A method of fabricating a semiconductor laser diode according to
claim 1
, wherein said active layer has multiple quantum well layer.
5. A method of fabricating a semiconductor laser diode, comprising:
forming a pair of strip-shaped mask layers on a semiconductor substrate, said mask layers are along a direction with an angle to [011] direction of said semiconductor substrate; and
forming a ridge waveguide structure including an active layer on said semiconductor substrate by selective growth method using said mask layers.
US09/797,959 2000-04-28 2001-03-05 Method of fabricating semiconductor laser diode Expired - Fee Related US6387746B2 (en)

Applications Claiming Priority (3)

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JP2000-129875 2000-04-28
JP129875/2000 2000-04-28
JP2000129875A JP2001313439A (en) 2000-04-28 2000-04-28 Method for manufacturing semiconductor laser

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JP2814906B2 (en) 1993-01-07 1998-10-27 日本電気株式会社 Optical semiconductor device and method of manufacturing the same
JP2767676B2 (en) * 1993-03-19 1998-06-18 松下電器産業株式会社 Method for forming fine structure of compound semiconductor
JP2746065B2 (en) * 1993-07-29 1998-04-28 日本電気株式会社 Method for manufacturing optical semiconductor device
JP3285426B2 (en) * 1993-08-04 2002-05-27 株式会社日立製作所 Semiconductor optical integrated device and method of manufacturing the same
JP2000286508A (en) * 1999-03-29 2000-10-13 Oki Electric Ind Co Ltd Semiconductor device and manufacture thereof

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