KR970008513A - 서브마운트 - Google Patents
서브마운트 Download PDFInfo
- Publication number
- KR970008513A KR970008513A KR1019960028666A KR19960028666A KR970008513A KR 970008513 A KR970008513 A KR 970008513A KR 1019960028666 A KR1019960028666 A KR 1019960028666A KR 19960028666 A KR19960028666 A KR 19960028666A KR 970008513 A KR970008513 A KR 970008513A
- Authority
- KR
- South Korea
- Prior art keywords
- metal powder
- submount
- insulating substrate
- sintered metal
- layer
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract 19
- 239000002184 metal Substances 0.000 claims abstract 19
- 239000000843 powder Substances 0.000 claims abstract 15
- 239000000758 substrate Substances 0.000 claims abstract 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract 4
- 239000011733 molybdenum Substances 0.000 claims abstract 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910052721 tungsten Inorganic materials 0.000 claims abstract 4
- 239000010937 tungsten Substances 0.000 claims abstract 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract 3
- 229910052802 copper Inorganic materials 0.000 claims abstract 3
- 239000010949 copper Substances 0.000 claims abstract 3
- 238000010304 firing Methods 0.000 claims abstract 2
- 239000010410 layer Substances 0.000 claims 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 6
- 239000000654 additive Substances 0.000 claims 5
- 230000000996 additive effect Effects 0.000 claims 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 3
- 239000011230 binding agent Substances 0.000 claims 3
- 239000003960 organic solvent Substances 0.000 claims 3
- 229910052763 palladium Inorganic materials 0.000 claims 3
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 2
- 229910001069 Ti alloy Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims 2
- JCTXKRPTIMZBJT-UHFFFAOYSA-N 2,2,4-trimethylpentane-1,3-diol Chemical compound CC(C)C(O)C(C)(C)CO JCTXKRPTIMZBJT-UHFFFAOYSA-N 0.000 claims 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 claims 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 claims 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims 1
- 229920000178 Acrylic resin Polymers 0.000 claims 1
- 239000004925 Acrylic resin Substances 0.000 claims 1
- 229920008347 Cellulose acetate propionate Polymers 0.000 claims 1
- 239000001856 Ethyl cellulose Substances 0.000 claims 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims 1
- 239000000020 Nitrocellulose Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- SMEGJBVQLJJKKX-HOTMZDKISA-N [(2R,3S,4S,5R,6R)-5-acetyloxy-3,4,6-trihydroxyoxan-2-yl]methyl acetate Chemical compound CC(=O)OC[C@@H]1[C@H]([C@@H]([C@H]([C@@H](O1)O)OC(=O)C)O)O SMEGJBVQLJJKKX-HOTMZDKISA-N 0.000 claims 1
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 claims 1
- 229940081735 acetylcellulose Drugs 0.000 claims 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 229920002678 cellulose Polymers 0.000 claims 1
- 239000001913 cellulose Substances 0.000 claims 1
- 229920002301 cellulose acetate Polymers 0.000 claims 1
- 229920006217 cellulose acetate butyrate Polymers 0.000 claims 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims 1
- 230000002708 enhancing effect Effects 0.000 claims 1
- 229920001249 ethyl cellulose Polymers 0.000 claims 1
- 235000019325 ethyl cellulose Nutrition 0.000 claims 1
- 229960004667 ethyl cellulose Drugs 0.000 claims 1
- 229920001220 nitrocellulos Polymers 0.000 claims 1
- 229940079938 nitrocellulose Drugs 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 229940116411 terpineol Drugs 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Led Device Packages (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
- Conductive Materials (AREA)
Abstract
본 발명의 서브마운트는, 소결된 금속 분말이 채워진 관통 구멍을 갖는 절연 기판과, 절연 기판의 대향하는 두 표면에 각각 형성된 도전층을 구비하며, 여기서 절연 기판의 관통구멍에 채워지는 소결된 금속 분말은, 예를 들어 구리, 텅스텐, 몰리브덴 등으로 주로 구성된 금속 페이스트를 관통구멍에 채워넣은 다음 파이어링을 실시하여 형성되며, 두개의 도전층은 소결된 금속 분말에 의해 적어도 부분적으로 서로 전기적으로 접속된다.
본 발명에 따른 서브마운트는 낮은 전기 저항도와 높은 신뢰도를 갖고 소형으로 만들어질 수 있다. 그러므로, 본 발명의 서브마운트는 반도체 레이저 소자와 히트 싱크 간의 전기적 도전을 이루어주는 신규한 반도체 레이저 소자용 서브마운트로 사용하기에 적합한 것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 서브마운트의 일 실시예를 도시한 도면.
Claims (18)
- 소결된 금속 분말이 채워진 관통 구멍을 갖는 절연 기판과, 절연 기판의 대향하는 두 표면에 각각 형성된 도전층을 구비하며, 두 도전층은 절연 기판의 관통구멍에 채워진 소결된 금속 분말에 의해 적어도 부분적으로 서로 전기적으로 접속되는 것을 특징으로 하는 서브마운트.
- 제1항에 있어서, 절연 기판이 질화알루미늄, 산화베릴륜, 또는 산화알루미늄인 것을 특징으로 하는 서브마운트.
- 제1항에 있어서, 절연 기판이 170W/mK 이상의 열 전도도를 갖는 것을 특징으로 하는 서브마운트.
- 제1항에 있어서, 절연 기판이 200W/mK 이상의 열 전도도를 갖는 것을 특징으로 하는 서브마운트.
- 제1항에 있어서, 각각의 도전층이 티타늄, 크롬, 몰리브덴, 텅스텐, 텅스텐-티타늄 합금, 알루미늄, 니켈-크롬 합금, 탄탈륨, 또는 질화탄탈륨으로 만들어진 단일층으로 구성되는 것을 특징으로 하는 서브마운트.
- 제1항에 있어서, 각각의 도전층이 세개의 층, 즉 절연기판의 표면과 직접 접촉하는 제1층, 제1층 위에 형성된 제2층, 제2층 위에 형성된 제3층으로 구성되며, 제1층은 티타늄, 크롬, 몰리브덴, 텅스텐, 텅스텐-티타늄 합금, 알루미늄, 니켈-크롬 합금, 탄탈륨, 또는 질화탄탈륨으로 만들어지고, 제2층은 구리, 니켈, 팔라듐, 플라티늄, 또는 금으로 만들어지며, 제3층은 금, 은, 팔라듐, 또는 플라티늄으로 만들어지는 것을 특징으로 하는 서브마운트.
- 제1항에 있어서, 소결된 금속 분말을 구성하는 금속이 텅스텐, 몰리브덴, 구리, 은, 금, 니켈, 또는 팔라듐인 것을 특징으로 하는 서브마운트.
- 제1항에 있어서, 관통구멍이 0.1~0.8㎜의 직경을 갖는 것을 특징으로 하는 서브마운트.
- 제1항에 있어서, 소결된 금속 분말이 0.001~0.5Ω의 전기 저항도를 갖는 것을 특징으로 하는 서브마운트.
- 제1항에 있어서, 소결된 금속 분말이 0.001~0.1Ω의 전기 저항도를 갖는 것을 특징으로 하는 서브마운트.
- 제1항에 있어서, 소결된 금속 분말이 절연 기판과 상기 소결된 금속 분말 간의 결합력을 강화시키기 위한 분말성 첨가재 1.0~10중량%를 분산된 상태로 포함하는 것을 특징으로 하는 서브마운트.
- 제11항에 있어서, 분말성 첨가재가 질화알루미늄 또는 티타늄 분말인 것을 특징으로 하는 서브마운트.
- 제11항 또는 12항에 있어서, 분말성 첨가재가 0.1~5㎛의 평균 입자 직경을 갖는 것을 특징으로 하는 서브마운트.
- 제1항에 있어서, 관통구멍에 채워지는 소결된 금속 분말은 금속 분말, 유기 결합제, 유기 용제 및 절연 기판과 소결된 금속 분말 간의 결합력을 강화시키기 위한 분말성 첨가재를 포함하는 금속 페이스트를 관통구멍에 채워넣은 다음, 파이어링을 실시하여 형성되는 것을 특징으로 하는 서브마운트.
- 제14항에 있어서, 금속 페이스트는 금속 분말 100중량부, 유기 결합제 0.1~5중량부, 유기 용제 1~20중량부, 분말성 첨가재 1~10중량부를 포함하는 것을 특징으로 하는 서브마운트.
- 제14항 또는 15항에 있어서, 금속 분말이 0.1~20㎛의 평균 입자 직경을 갖는 것을 특징으로 하는 서브마운트.
- 제14항 또는 15항에 있어서, 유기 결합제가 아크릴계 수지, 또는 에틸 셀룰로오즈, 니트로셀룰로오즈, 아세틸 셀룰로오즈, 셀룰로오즈 아세테이트 프로피오네이트, 셀룰로오즈 아세테이트 부틸레이트 등과 같은 셀룰로오즈인 것을 특징으로 하는 서브마운트.
- 제14항 또는 15항에 있어서, 유기 용제가 테르피네올, 카르비톨, 부틸, 카르비톨, 부틸 카르비톨 아세테이트, 카르비톨 아세테이트, 2,2,4-트리메틸-1,3-펜탄디올 모노이소부틸레이트, 셀로졸브, 메틸 셀로졸브, 부틸 셀로졸브, 셀로졸브 아세테이트, 부틸 셀로졸브 아세테이트, 또는 n-부틸 아세테이트인 것을 특징으로 하는 서브마운트.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP95-181962 | 1995-07-18 | ||
| JP18196295A JP3165779B2 (ja) | 1995-07-18 | 1995-07-18 | サブマウント |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970008513A true KR970008513A (ko) | 1997-02-24 |
| KR100379975B1 KR100379975B1 (ko) | 2003-07-18 |
Family
ID=16109918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960028666A KR100379975B1 (ko) | 1995-07-18 | 1996-07-16 | 서브마운트 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5770821A (ko) |
| EP (1) | EP0755074B1 (ko) |
| JP (1) | JP3165779B2 (ko) |
| KR (1) | KR100379975B1 (ko) |
| DE (1) | DE69607531T2 (ko) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5605856A (en) * | 1995-03-14 | 1997-02-25 | University Of North Carolina | Method for designing an electronic integrated circuit with optical inputs and outputs |
| JP3339369B2 (ja) * | 1997-05-30 | 2002-10-28 | 株式会社デンソー | レーザダイオード |
| CA2252113A1 (en) * | 1997-10-29 | 1999-04-29 | Yoshihiko Numata | Substrate and process for producing the same |
| JP3274647B2 (ja) * | 1998-05-15 | 2002-04-15 | 日本電気株式会社 | 光半導体素子の実装構造 |
| JP2002100826A (ja) * | 2000-09-21 | 2002-04-05 | Toshiba Corp | サブマウント材 |
| US6636539B2 (en) * | 2001-05-25 | 2003-10-21 | Novalux, Inc. | Method and apparatus for controlling thermal variations in an optical device |
| GB0124220D0 (en) * | 2001-10-09 | 2001-11-28 | Denselight Semiconductors Pte | Thermal circuit |
| JP4030285B2 (ja) * | 2001-10-10 | 2008-01-09 | 株式会社トクヤマ | 基板及びその製造方法 |
| US6599466B1 (en) | 2002-01-16 | 2003-07-29 | Adma Products, Inc. | Manufacture of lightweight metal matrix composites with controlled structure |
| JP4189156B2 (ja) * | 2002-02-22 | 2008-12-03 | 株式会社トクヤマ | チップ貼設シート |
| JP3982284B2 (ja) * | 2002-03-06 | 2007-09-26 | 住友電気工業株式会社 | サブマウントおよび半導体装置 |
| JP3509809B2 (ja) * | 2002-04-30 | 2004-03-22 | 住友電気工業株式会社 | サブマウントおよび半導体装置 |
| WO2004007386A2 (en) * | 2002-07-11 | 2004-01-22 | Alfalight, Inc. | Thermal barrier for an optical bench |
| JP2004356429A (ja) * | 2003-05-29 | 2004-12-16 | Sumitomo Electric Ind Ltd | サブマウントおよびそれを用いた半導体装置 |
| WO2005031882A1 (ja) | 2003-09-30 | 2005-04-07 | Kabushiki Kaisha Toshiba | 発光装置 |
| DE10351934B4 (de) * | 2003-11-07 | 2017-07-13 | Tridonic Jennersdorf Gmbh | Leuchtdioden-Anordnung mit wärmeabführender Platine |
| DE10355600B4 (de) * | 2003-11-28 | 2021-06-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip und Verfahren zur Herstellung von Halbleiterchips |
| JP4393187B2 (ja) | 2003-12-26 | 2010-01-06 | 日本オプネクスト株式会社 | 半導体光素子用チップキャリア、光モジュール、及び光送受信器 |
| JP2006100625A (ja) * | 2004-09-30 | 2006-04-13 | Tokuyama Corp | ハンダ層付き基板 |
| JP4372669B2 (ja) | 2004-11-25 | 2009-11-25 | 株式会社トクヤマ | 素子搭載用基板の製造方法 |
| DE102008013028A1 (de) * | 2008-03-07 | 2009-09-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil, Gerät zur Aufzeichnung von Bildinformation und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
| CN101465516B (zh) * | 2009-01-09 | 2010-12-01 | 西安炬光科技有限公司 | 一种大功率半导体激光器及其制备方法 |
| JP2011048256A (ja) * | 2009-08-28 | 2011-03-10 | Yazaki Corp | 光コネクタ及び光トランシーバ |
| KR20110085481A (ko) * | 2010-01-20 | 2011-07-27 | 삼성전자주식회사 | 적층 반도체 패키지 |
| DE102010045783A1 (de) * | 2010-09-17 | 2012-03-22 | Osram Opto Semiconductors Gmbh | Trägersubstrat für ein optoelektronisches Bauelement, Verfahren zu dessen Herstellung und optoelektronisches Bauelement |
| TWI613177B (zh) * | 2011-11-16 | 2018-02-01 | 製陶技術股份有限公司 | 製造一基材的方法 |
| US9563233B2 (en) * | 2014-08-14 | 2017-02-07 | Microsoft Technology Licensing, Llc | Electronic device with plated electrical contact |
| US9042048B1 (en) | 2014-09-30 | 2015-05-26 | Western Digital (Fremont), Llc | Laser-ignited reactive HAMR bonding |
| JP6881746B2 (ja) * | 2016-04-25 | 2021-06-02 | 住友電工デバイス・イノベーション株式会社 | 光半導体装置 |
| EP3565068B1 (en) * | 2018-04-30 | 2021-02-24 | FRAUNHOFER-GESELLSCHAFT zur Förderung der angewandten Forschung e.V. | Thermally tunable laser and method for fabricating such laser |
| CN114938693A (zh) * | 2019-12-26 | 2022-08-23 | 日亚化学工业株式会社 | 激光光源 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57184296A (en) * | 1981-05-09 | 1982-11-12 | Hitachi Ltd | Ceramic circuit board |
| JPS61119051A (ja) * | 1984-11-15 | 1986-06-06 | Nec Corp | 半導体装置 |
| US4732780A (en) * | 1985-09-26 | 1988-03-22 | General Electric Company | Method of making hermetic feedthrough in ceramic substrate |
| JPS63144588A (ja) * | 1986-12-09 | 1988-06-16 | Mitsubishi Electric Corp | 半導体チツプレ−ザ用サブマウント |
| US5529852A (en) * | 1987-01-26 | 1996-06-25 | Sumitomo Electric Industries, Ltd. | Aluminum nitride sintered body having a metallized coating layer on its surface |
| US4894273A (en) * | 1987-05-22 | 1990-01-16 | Ceramics Process Systems Corp. | Bonding additives for refractory metallization inks |
| JPH0750813B2 (ja) * | 1988-05-23 | 1995-05-31 | 三菱電機株式会社 | 半導体レーザ素子用サブマウント |
| US4942076A (en) * | 1988-11-03 | 1990-07-17 | Micro Substrates, Inc. | Ceramic substrate with metal filled via holes for hybrid microcircuits and method of making the same |
| DE3838461A1 (de) * | 1988-11-12 | 1990-05-23 | Krebsoege Gmbh Sintermetall | Pulvermetallurgischer werkstoff auf kupferbasis und dessen verwendung |
| US5229549A (en) * | 1989-11-13 | 1993-07-20 | Sumitomo Electric Industries, Ltd. | Ceramic circuit board and a method of manufacturing the ceramic circuit board |
| US5587111A (en) * | 1990-03-29 | 1996-12-24 | Vacuum Metallurgical Co., Ltd. | Metal paste, process for producing same and method of making a metallic thin film using the metal paste |
| US5200249A (en) * | 1990-08-15 | 1993-04-06 | W. R. Grace & Co.-Conn. | Via metallization for AlN ceramic electronic package |
| JPH04242088A (ja) * | 1991-01-16 | 1992-08-28 | Nec Corp | Ｉｃソケット |
| JPH0548213A (ja) * | 1991-08-15 | 1993-02-26 | Tanaka Kikinzoku Kogyo Kk | 半導体レーザーのサブマウント |
| JP2992380B2 (ja) * | 1991-08-27 | 1999-12-20 | 日本特殊陶業株式会社 | ビアホールメタライズを有するセラミック焼結体の製造方法 |
| JP2990906B2 (ja) * | 1991-12-11 | 1999-12-13 | 株式会社日立製作所 | 半導体素子実装用ヒートシンク |
| US5340947A (en) * | 1992-06-22 | 1994-08-23 | Cirqon Technologies Corporation | Ceramic substrates with highly conductive metal vias |
| JPH06112585A (ja) * | 1992-09-25 | 1994-04-22 | Tanaka Kikinzoku Kogyo Kk | サブマウントの製造方法 |
| JPH06163765A (ja) * | 1992-11-27 | 1994-06-10 | Nippon Avionics Co Ltd | 窒化アルミヒートシンクおよびその製造方法 |
| US5429670A (en) * | 1993-04-26 | 1995-07-04 | Matsushita Electric Industrial Co., Ltd. | Gold paste for a ceramic circuit board |
| US5561322A (en) * | 1994-11-09 | 1996-10-01 | International Business Machines Corporation | Semiconductor chip package with enhanced thermal conductivity |
-
1995
- 1995-07-18 JP JP18196295A patent/JP3165779B2/ja not_active Expired - Lifetime
-
1996
- 1996-07-12 US US08/679,673 patent/US5770821A/en not_active Expired - Lifetime
- 1996-07-16 KR KR1019960028666A patent/KR100379975B1/ko not_active IP Right Cessation
- 1996-07-17 DE DE69607531T patent/DE69607531T2/de not_active Expired - Lifetime
- 1996-07-17 EP EP96305256A patent/EP0755074B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0755074A2 (en) | 1997-01-22 |
| EP0755074A3 (en) | 1998-04-01 |
| KR100379975B1 (ko) | 2003-07-18 |
| US5770821A (en) | 1998-06-23 |
| JPH0936274A (ja) | 1997-02-07 |
| DE69607531T2 (de) | 2001-01-11 |
| EP0755074B1 (en) | 2000-04-05 |
| DE69607531D1 (de) | 2000-05-11 |
| JP3165779B2 (ja) | 2001-05-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR970008513A (ko) | 서브마운트 | |
| US5395679A (en) | Ultra-thick thick films for thermal management and current carrying capabilities in hybrid circuits | |
| US3714709A (en) | Method of manufacturing thick-film hybrid integrated circuits | |
| US4347262A (en) | Aluminum-magnesium alloys in low resistance contacts to silicon | |
| JPS61259559A (ja) | 回路保護装置 | |
| JPS58137231A (ja) | 集積回路装置 | |
| US5363082A (en) | Flip chip microfuse | |
| US6111198A (en) | Duplex feedthrough and method therefor | |
| AU2003214908A1 (en) | Encapsulated electronic device and method of manufacturing the same | |
| US4224656A (en) | Fused electrolytic capacitor assembly | |
| EP1701380A2 (en) | Semiconductor power module | |
| US4375007A (en) | Silicon solar cells with aluminum-magnesium alloy low resistance contacts | |
| TW201131611A (en) | Metal film surface mount fuse | |
| KR960706052A (ko) | 생사 스크리닝에 의한 미니 점화기의 활성 금속화 방법(Active metal metallization of mini igniters by silk screening) | |
| JP2023159217A (ja) | チップ抵抗器の抵抗層形成用ペースト及びチップ抵抗器 | |
| CN1173244A (zh) | 电连接方法 | |
| KR950034786A (ko) | 캐패시터, 전극 또는 배선 구조물 및 반도체 디바이스 | |
| KR960025832A (ko) | 도전성 페이스트 및 이를 사용한 도전체와 다층 세라믹 기판 | |
| KR970063600A (ko) | 전계 방출 전자 발생원 및 그 제조방법 | |
| WO2003044809A1 (en) | Surge current chip resistor | |
| KR960043165A (ko) | 다수의 보호 소자를 포함하는 정전기 보호 회로 | |
| KR960025833A (ko) | 도전성 페이스트 및 이를 사용한 도전체와 다층 세라믹 기판 | |
| KR960042780A (ko) | 칩형상전자부품 및 그 제조방법 | |
| ATE546833T1 (de) | Halbleiterkapselung mit füllmetall aus gold- /silber-/kupferlegierung | |
| EP0261938A2 (en) | Circuit protection device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20130321 Year of fee payment: 11 |
|
| FPAY | Annual fee payment |
Payment date: 20140319 Year of fee payment: 12 |
|
| LAPS | Lapse due to unpaid annual fee |