KR970004021A - 반도체 기억장치 및 반도체 집적회로장치 - Google Patents

반도체 기억장치 및 반도체 집적회로장치 Download PDF

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Publication number
KR970004021A
KR970004021A KR1019960020384A KR19960020384A KR970004021A KR 970004021 A KR970004021 A KR 970004021A KR 1019960020384 A KR1019960020384 A KR 1019960020384A KR 19960020384 A KR19960020384 A KR 19960020384A KR 970004021 A KR970004021 A KR 970004021A
Authority
KR
South Korea
Prior art keywords
semiconductor
integrated circuits
semiconductor memory
semiconductor integrated
memory
Prior art date
Application number
KR1019960020384A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR970004021A publication Critical patent/KR970004021A/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/561—Multilevel memory cell aspects
    • G11C2211/5614—Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
KR1019960020384A 1995-06-08 1996-06-07 반도체 기억장치 및 반도체 집적회로장치 KR970004021A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14178995A JP3397516B2 (ja) 1995-06-08 1995-06-08 半導体記憶装置及び半導体集積回路装置

Publications (1)

Publication Number Publication Date
KR970004021A true KR970004021A (ko) 1997-01-29

Family

ID=15300196

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960020384A KR970004021A (ko) 1995-06-08 1996-06-07 반도체 기억장치 및 반도체 집적회로장치

Country Status (3)

Country Link
US (2) US5689458A (ko)
JP (1) JP3397516B2 (ko)
KR (1) KR970004021A (ko)

Families Citing this family (44)

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US6229161B1 (en) 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
JP2000349172A (ja) * 1999-02-26 2000-12-15 Sony Corp 半導体メモリセル
US6690038B1 (en) 1999-06-05 2004-02-10 T-Ram, Inc. Thyristor-based device over substrate surface
JP2001068632A (ja) * 1999-08-25 2001-03-16 Mitsubishi Electric Corp 半導体記憶装置および製造方法
JP4988086B2 (ja) * 2000-06-13 2012-08-01 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法並びに抵抗器及び半導体素子
US6596617B1 (en) 2000-06-22 2003-07-22 Progressant Technologies, Inc. CMOS compatible process for making a tunable negative differential resistance (NDR) device
US6724655B2 (en) * 2000-06-22 2004-04-20 Progressant Technologies, Inc. Memory cell using negative differential resistance field effect transistors
US6518589B2 (en) 2000-06-22 2003-02-11 Progressant Technologies, Inc. Dual mode FET & logic circuit having negative differential resistance mode
US6754104B2 (en) 2000-06-22 2004-06-22 Progressant Technologies, Inc. Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET
US6479862B1 (en) * 2000-06-22 2002-11-12 Progressant Technologies, Inc. Charge trapping device and method for implementing a transistor having a negative differential resistance mode
US6512274B1 (en) 2000-06-22 2003-01-28 Progressant Technologies, Inc. CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
US6594193B2 (en) 2000-06-22 2003-07-15 Progressent Technologies, Inc. Charge pump for negative differential resistance transistor
US6559470B2 (en) 2000-06-22 2003-05-06 Progressed Technologies, Inc. Negative differential resistance field effect transistor (NDR-FET) and circuits using the same
US7456439B1 (en) 2001-03-22 2008-11-25 T-Ram Semiconductor, Inc. Vertical thyristor-based memory with trench isolation and its method of fabrication
US6727528B1 (en) 2001-03-22 2004-04-27 T-Ram, Inc. Thyristor-based device including trench dielectric isolation for thyristor-body regions
US6804162B1 (en) 2001-04-05 2004-10-12 T-Ram, Inc. Read-modify-write memory using read-or-write banks
US6583452B1 (en) 2001-12-17 2003-06-24 T-Ram, Inc. Thyristor-based device having extended capacitive coupling
US6956262B1 (en) 2001-12-21 2005-10-18 Synopsys Inc. Charge trapping pull up element
US7453083B2 (en) * 2001-12-21 2008-11-18 Synopsys, Inc. Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
JP4033690B2 (ja) * 2002-03-04 2008-01-16 株式会社ルネサステクノロジ 半導体装置
US6832300B2 (en) 2002-03-20 2004-12-14 Hewlett-Packard Development Company, L.P. Methods and apparatus for control of asynchronous cache
US6847562B2 (en) * 2002-06-28 2005-01-25 Progressant Technologies, Inc. Enhanced read and write methods for negative differential resistance (NDR) based memory device
US6853035B1 (en) 2002-06-28 2005-02-08 Synopsys, Inc. Negative differential resistance (NDR) memory device with reduced soft error rate
US6912151B2 (en) * 2002-06-28 2005-06-28 Synopsys, Inc. Negative differential resistance (NDR) based memory device with reduced body effects
US6795337B2 (en) 2002-06-28 2004-09-21 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6567292B1 (en) 2002-06-28 2003-05-20 Progressant Technologies, Inc. Negative differential resistance (NDR) element and memory with reduced soft error rate
US7098472B2 (en) * 2002-06-28 2006-08-29 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US7095659B2 (en) * 2002-06-28 2006-08-22 Progressant Technologies, Inc. Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device
US6864104B2 (en) * 2002-06-28 2005-03-08 Progressant Technologies, Inc. Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
US6965129B1 (en) 2002-11-06 2005-11-15 T-Ram, Inc. Thyristor-based device having dual control ports
US6979580B2 (en) 2002-12-09 2005-12-27 Progressant Technologies, Inc. Process for controlling performance characteristics of a negative differential resistance (NDR) device
US6806117B2 (en) * 2002-12-09 2004-10-19 Progressant Technologies, Inc. Methods of testing/stressing a charge trapping device
US6980467B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Method of forming a negative differential resistance device
US6849483B2 (en) * 2002-12-09 2005-02-01 Progressant Technologies, Inc. Charge trapping device and method of forming the same
US7012833B2 (en) * 2002-12-09 2006-03-14 Progressant Technologies, Inc. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
US6812084B2 (en) * 2002-12-09 2004-11-02 Progressant Technologies, Inc. Adaptive negative differential resistance device
US7005711B2 (en) * 2002-12-20 2006-02-28 Progressant Technologies, Inc. N-channel pull-up element and logic circuit
JP2005056452A (ja) * 2003-08-04 2005-03-03 Hitachi Ltd メモリ及び半導体装置
JP4670252B2 (ja) * 2004-01-20 2011-04-13 ソニー株式会社 記憶装置
JP5064816B2 (ja) * 2006-03-28 2012-10-31 オンセミコンダクター・トレーディング・リミテッド メモリ
US7492627B2 (en) * 2006-11-17 2009-02-17 Freescale Semiconductor, Inc. Memory with increased write margin bitcells
CN102171812B (zh) * 2008-10-02 2014-02-12 株式会社半导体能源研究所 半导体器件
KR102126967B1 (ko) * 2013-10-11 2020-07-08 삼성전자주식회사 메모리 소자 및 그 제조 방법
US10615176B2 (en) 2017-11-22 2020-04-07 International Business Machine Corporation Ferro-electric complementary FET

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US4376986A (en) * 1981-09-30 1983-03-15 Burroughs Corporation Double Lambda diode memory cell
JPS6323357A (ja) * 1986-06-14 1988-01-30 Agency Of Ind Science & Technol 半導体記憶装置
CA1291224C (en) * 1985-10-12 1991-10-22 Naoki Yokoyama Logic circuit using resonant-tunneling transistor
JPH02109361A (ja) * 1988-10-18 1990-04-23 Sony Corp 半導体装置
JPH03104161A (ja) * 1989-09-18 1991-05-01 Fujitsu Ltd 半導体記憶装置
US5272357A (en) * 1989-11-30 1993-12-21 Canon Kabushiki Kaisha Semiconductor device and electronic device by use of the semiconductor
KR960010736B1 (ko) * 1991-02-19 1996-08-07 미쓰비시뎅끼 가부시끼가이샤 마스크 rom 및 그 제조방법
JPH05291533A (ja) * 1992-04-15 1993-11-05 Fujitsu Ltd 半導体装置
US5390145A (en) * 1993-04-15 1995-02-14 Fujitsu Limited Resonance tunnel diode memory
DE69416619T2 (de) * 1993-05-12 1999-09-30 Zaidan Hojin Handotai Kenkyu Shinkokai, Sendai Halbleiterspeicheranordnung und Verfahren zur Herstellung
US5429978A (en) * 1994-06-22 1995-07-04 Industrial Technology Research Institute Method of forming a high density self-aligned stack in trench
US5629546A (en) * 1995-06-21 1997-05-13 Micron Technology, Inc. Static memory cell and method of manufacturing a static memory cell

Also Published As

Publication number Publication date
US5838609A (en) 1998-11-17
JP3397516B2 (ja) 2003-04-14
US5689458A (en) 1997-11-18
JPH08335671A (ja) 1996-12-17

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A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application
J201 Request for trial against refusal decision
J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 19990729

Effective date: 20000527