KR970003609A - 플라즈마 처리장치 - Google Patents

플라즈마 처리장치 Download PDF

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Publication number
KR970003609A
KR970003609A KR1019960020283A KR19960020283A KR970003609A KR 970003609 A KR970003609 A KR 970003609A KR 1019960020283 A KR1019960020283 A KR 1019960020283A KR 19960020283 A KR19960020283 A KR 19960020283A KR 970003609 A KR970003609 A KR 970003609A
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focus ring
plasma processing
processing apparatus
electrostatic chuck
lower electrode
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KR1019960020283A
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KR100351646B1 (ko
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유지 쯔까모또
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이노우에 아끼라
도쿄 에레쿠토론 가부시끼이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

급전봉(42)을 통해 고주파 전원(43)에서 처리실(2)내의 서셉터(5)에 고주파 전력을 공급하고, 상부 전극(21) 사이에 플라즈마를 발생시키며, 정전 척(11)상의 웨이퍼 W에 대해서 에칭하는 장치에 있어서, 웨이퍼 W의 외주에 위치하는 포커스링(17)에 실리콘으로 된 측정 전극(18)을 설치한다. 측정 전극(18)의 하부는 서셉터(5)와 직접 도통하게 한다. 급전봉(42)에서 인출된 리드선(44)에 RF 필터(45)를 사이에 두고, VDC측정용 전압계(46)를 접속한다. 웨이퍼 W상의 VDC와 일정한 상관관계를 갖는 VDC레벨이 VDC모니터(46)에서 검출된다.

Description

플라즈마 처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 플라즈마 처리장치의 일 실시예인 플라즈마 에칭 장치의 개략 구성을 도시하는 설명도, 제2도는 제1도의 플라즈마 에칭 장치에 있어서의 측정 전극 근방을 도시하는 확대 단면도.

Claims (13)

  1. 고주파 전력에 의해 처리실내에 플라즈마를 발생시키고, 이 처리실내의 하부전극상의 피처리체에 대해 처리를 행하는 장치에 있어서, 상기 피처리체 주변에 상기 하부 전극과 도통한 측정 전극이 노출되도록 배치된 플라즈마 처리장치.
  2. 제1항에 있어서, 상기 측정 전극을 구성하는 부재의 상면과 하부 전극의 상면이 거의 동일면인, 플라즈마 처리장치.
  3. 제1항에 있어서, 상기 하부 전극은 2매의 고분자 필름에 전도층이 함지되어있고, 상기 피처리체를 설치하는 정전 척과, 상기 정전 척의 외측에 배치된 포커스링과, 상기 정전 척에 전압을 공급하는 전합 공급 수단으로 구성된, 플라즈마 처리장치.
  4. 제3항에 있어서, 상기 측정 전극은 상기 포커스링에 설치되어 있는, 플라즈마 처리장치.
  5. 제1항에 있어서, 상기 포커스링은 제1포커스링과, 상기 제1포커스링의 외측에 배치된 제2포커스링으로 이루어지고, 상기 제1포커스링은 전도성을 가지며, 상기 제2포커스링은 절연성을 가지고, 상기 제1포커스링에 상기 측정 전극이 설치되어 있는, 플라즈마 처리장치.
  6. 제3항에 있어서, 상기 포커스링은 제1포커스링과, 상기 제1포커스링의 외측에 배치된 제2포커스링으로 이루어지고, 상기 제1포커스링은 전연성을 가지며, 상기 제2포커스링은 절도성을 가지고, 상기 제2의 포커스링에 상기 측정 전극이 설치되어 있는, 플라즈마 처리장치.
  7. 제3항에 있어서,상기 포커스링은 상기 피처리체의 형상과 거의 동일한 형상의 구멍부를 가지고, 상기 포커스링의 두께는 상기 피처리체의 두께와 거의 동일한, 플라즈마 처리장치.
  8. 제7항에 있어서, 상기 피처리체는 오리엔테이션 프랫트를 갖는 반도체 웨이퍼이고, 상기 측정 전극은 오리엔테이션 프랫트 근방에 설치된, 플라즈마 처리장치.
  9. 제3항에 있어서, 상기 정전 척에는 상기 정전 척과 피처리체 사이에 절연 가스를 공급하는 구멍이 설치되어 있는, 플라즈마 처리장치.
  10. 제9항에 있어서, 상기 구멍을 통하여 상기 정전 척과 피처리체 사이에 전열 가스를 공급하는 전열 가스 공급 수단을 또한 구비하는, 플라즈마 처리장치.
  11. 제1항에 있어서, 상기 하부 전극은 상기 피처리체를 냉각하기 위한 냉매 순환 수단을 갖는, 플라즈마 처리장치.
  12. 제1항에 있어서, 상기 하부 전극에 고주파 전력을 공급하기 위한 고주파 공급 수단이 전기적으로 접속되어 있는, 플라즈마 처리장치.
  13. 제12항에 있어서, 상기 고주파 공급 수단 및 상기 측정 전극에 전기적으로 접속하고, 측정 전극에서 측정된 자기 바이어스 전위 정보에 기인하여 상기 피처리체의 자기 바이어스 전위 정보를 산출하고, 상기 고주파 공급 수단의 전력 공급량을 제어하는 제어 수단을 또한 구비하는, 플라즈마 처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960020283A 1995-06-07 1996-06-07 플라즈마처리장치 KR100351646B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP16686595A JP3208044B2 (ja) 1995-06-07 1995-06-07 プラズマ処理装置及びプラズマ処理方法
JP95-166865 1995-06-07

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KR100351646B1 KR100351646B1 (ko) 2003-01-24

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