KR970003394A - Natural oxide removal method on semiconductor wafer - Google Patents

Natural oxide removal method on semiconductor wafer Download PDF

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Publication number
KR970003394A
KR970003394A KR1019950019139A KR19950019139A KR970003394A KR 970003394 A KR970003394 A KR 970003394A KR 1019950019139 A KR1019950019139 A KR 1019950019139A KR 19950019139 A KR19950019139 A KR 19950019139A KR 970003394 A KR970003394 A KR 970003394A
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KR
South Korea
Prior art keywords
oxide film
natural oxide
semiconductor wafer
removal method
oxide removal
Prior art date
Application number
KR1019950019139A
Other languages
Korean (ko)
Inventor
김원길
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950019139A priority Critical patent/KR970003394A/en
Publication of KR970003394A publication Critical patent/KR970003394A/en

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  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

1. 청구 범위에 기재된 발명이 속한 기술분야1. TECHNICAL FIELD OF THE INVENTION

고집적 반도체 소자 제조 방법.Highly integrated semiconductor device manufacturing method.

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

폴리실리콘의 도핑을 실시한 후에 형성되는 자연 산화막을 제거하는 종래의 방법은 불산 용액을 이용하여 습식 식각을 실시하여 제거하였는데, 린스조건이나 단차 등의 영향으로 자연 산화막이 완전히 제거되지 않고 잔류하는 현상이 발생하며 이로 인해 후속 공정에서 소자 불량을 유발하는 문제점을 해결하고자 함.The conventional method of removing the natural oxide film formed after the polysilicon doping has been removed by wet etching using a hydrofluoric acid solution. To solve the problem that causes device defect in the subsequent process.

3. 발명의 해결방법의 요지3. Summary of Solution to Invention

자연산화막상에 얇은 산화막을 더 증착한 다음, 이 산화막을 자연 산화막과 함께 건식 식각하여 제거하므로써, 효과적으로 자연 산화막을 제거하는 방법을 제공하고자 함.By further depositing a thin oxide film on the natural oxide film and then dry etching the oxide film along with the natural oxide film to provide a method for effectively removing the natural oxide film.

4. 발명의 중요한 용도4. Important uses of the invention

고집적 반도체 소자의 제조에 이용됨.Used in the manufacture of highly integrated semiconductor devices.

Description

반도체 웨이퍼상의 자연 산화막 제거 방법Natural oxide removal method on semiconductor wafer

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도는 본 발명의 자연 산화막 제거 방법에 따른 공정도.Figure 2A is a process chart according to the natural oxide film removal method of the present invention.

Claims (4)

반도체 웨이퍼 상의 폴리실리콘 상에 형성된 자연 산화막을 제거하는 방법에 있어서, 상기 자연 산화막상에 산화막을 소정의 두께로 증착하는 단계와, 상기 산화막을 상기 자연 산화막과 함께 플라즈마 식각하여 제거하는 단계를 포함해서 이루어진 반도체 웨이퍼상의 자연 산화막 제거 방법.A method of removing a native oxide film formed on polysilicon on a semiconductor wafer, comprising the steps of: depositing an oxide film on the natural oxide film to a predetermined thickness, and removing the oxide film by plasma etching together with the natural oxide film. A method of removing a native oxide film on a semiconductor wafer. 제1항에 있어서, 상기 플라즈마 식각은 상기 산화막과 폴리실리콘이 약 5 : 1의 식각비가 되도록 혼합된 CHF3, CF4및 Ar 가스를 사용하여 수행되는 것을 특징으로 하는 반도체 웨이퍼상의 자연 산화막 제거 방법.The method of claim 1, wherein the plasma etching is performed using CHF 3 , CF 4, and Ar gases mixed so that the oxide film and polysilicon have an etching ratio of about 5: 1. . 제1항 또는 제2항에 있어서, 상기 플라즈마 식각은 약 700W 내지 1000W의 무선 주파수 전원을 이용하여 수행되는 것을 특징으로 하는 반도체 웨이퍼 상의 자연 산화막 제거 방법.3. The method of claim 1, wherein the plasma etching is performed using a radio frequency power source of about 700 W to 1000 W. 4. 제1항에 있어서, 상기 산화막의 두께는 약 200A 내지 1000A인 것을 특징으로 하는 반도체 웨이퍼 상의 자연 산화막 제거 방법.2. The method of claim 1 wherein the oxide film has a thickness of about 200 A to 1000 A. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950019139A 1995-06-30 1995-06-30 Natural oxide removal method on semiconductor wafer KR970003394A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950019139A KR970003394A (en) 1995-06-30 1995-06-30 Natural oxide removal method on semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950019139A KR970003394A (en) 1995-06-30 1995-06-30 Natural oxide removal method on semiconductor wafer

Publications (1)

Publication Number Publication Date
KR970003394A true KR970003394A (en) 1997-01-28

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950019139A KR970003394A (en) 1995-06-30 1995-06-30 Natural oxide removal method on semiconductor wafer

Country Status (1)

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KR (1) KR970003394A (en)

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