JPS59136931A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS59136931A JPS59136931A JP1182283A JP1182283A JPS59136931A JP S59136931 A JPS59136931 A JP S59136931A JP 1182283 A JP1182283 A JP 1182283A JP 1182283 A JP1182283 A JP 1182283A JP S59136931 A JPS59136931 A JP S59136931A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- film
- etching
- thin film
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000005530 etching Methods 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000010408 film Substances 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 238000000059 patterning Methods 0.000 claims abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 3
- 238000001020 plasma etching Methods 0.000 claims abstract 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000001312 dry etching Methods 0.000 abstract description 7
- 239000007788 liquid Substances 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 1
- 238000004528 spin coating Methods 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、半導体装置の製造方法に係り、詳しくは、ド
ライエツチング後に除法が各易な、もしくは除法が不＝
なエツチングマスク材料の容易な製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device.
The present invention relates to an easy manufacturing method for an etching mask material.
ドライエツチングは、従来広く一般に微細加工法として
用いられてきたウェットエツチングに比較して、サイド
エッチが少ないためより微細な加工に向いている、ウェ
ットエツチングでは加工が困難だった被加工材料（例え
ばＳ１〜５Ｎ４、Ｐｏ１ｙｓｉ ）の加工が谷易でめる
、終点検出が谷易なため自動化しやすい、液体に′〈ら
べ気不の方が純度が高いタメよジクリーンなグロヤスに
なるなどの特徴７Ｍし、近年、半勇坏装置の奥積度が向
上するにつれて盛んに用いられるよりになってきた。し
かし、１だ解決すべき多くの問題点を待っている。Compared to wet etching, which has traditionally been widely used as a microfabrication method, dry etching involves less side etching, making it suitable for finer machining. ~5N4, Polysi) can be easily processed, the end point detection is easy, so it is easy to automate, and the liquid can be made into a clean gloss with higher purity.7M However, in recent years, as the depth of the half-coat device has improved, it has come into widespread use. However, there are many problems waiting to be solved.
ＤＪ ’Ｆ、 ドライエツチングのもつ問題点につい
て説明する。エツチングのマスク材料としては、光照射
による化学反応ヶ起こし、特定の現像液に可溶′ｆた（
−り不溶になるレジストか王に用いられている。ところ
で、」在、生産工程で実用化されてぃ／、、）レジスト
は′すべて有機物であり、半力坏装置製企「梶め重湯（
２００〜５００Ｃ以上）熱処理で分解し、黙％理装置″
ｆたは該半４坏装置をｌケ染する問題があるため、Ａｆ
ｔ記レジストはエツチング後、熱処理を有り前ＶＣ除去
しなければならない。ところが、有機物からなるＡｉｌ
記レジストをエツチングマスクに用い、フラズマ全半導
体装餌に照射するドライエツチング加工を行うと、プラ
ズマ全照射芒れたレジストがｆ實し、従来、広く用いら
れてきたＨ２ＳＯ４とＨ２０□ の混合溶液からなるレ
ジスト除去液では除去できないといり問題が生じた。DJ'F explains the problems with dry etching. As an etching mask material, it is possible to cause a chemical reaction by light irradiation, and it is soluble in a specific developer (
- It is used for resists that become insoluble. By the way, the resist that is currently being put into practical use in the production process is entirely organic, and the resist that has been put into practical use in the production process is entirely organic.
200-500C or higher) decomposes by heat treatment, and silently decomposes it with a
Af
After the resist is etched, it must be heat treated and the VC must be removed. However, Ail consisting of organic matter
When the above resist is used as an etching mask and a dry etching process is performed by irradiating the entire plasma semiconductor substrate, the resist completely irradiated with plasma is produced. A problem arose in that the resist removal solution could not be removed.
不発明は、前、・への問題１ｒ解決するためＫなされた
ものであり、プラズマを照射した後でも除去が容易なエ
ツチングマスク金容易に形成する方法に関する。以下、
不発明の半導体装置の製造方法を図面に基づいて詳細に
説明する。第１図は（ａ）〜（ｇ）は、本発明の半導体
装置の製造方法の一実施例を示す胡面図であり、５ｉ０
２２上に配したｐｏ１７Ｅ］ｉ１の薄膜（第１図（ａ）
参＃＠）全ＣＦ４などのガスに局周波電界？印加してつ
くるプラズマでエツチングする場合のエツチングマスク
形成法に関する。１ず。The present invention was made to solve the problems 1r and 2 above, and relates to a method for easily forming an etching mask that can be easily removed even after plasma irradiation. below,
An inventive method for manufacturing a semiconductor device will be explained in detail based on the drawings. FIGS. 1(a) to 1(g) are cross-sectional views showing an embodiment of the method for manufacturing a semiconductor device of the present invention, and 5i0
A thin film of po17E]i1 placed on 22 (Fig. 1(a)
Reference #@) Is there a local frequency electric field in all gases such as CF4? This invention relates to a method for forming an etching mask when etching is performed using plasma generated by application. 1s.
ｐｏ１７８ｉ１ ｋ、０２ガスまたは水蒸気雰囲気中で
９００〜１２００Ｃ１ｌ／）両温熱処理をすることによ
υ熱酸化（７、ｐｏ ｌｙｓ ｉ Ｉ上に８１０２５
ｆ形成する（第１図（ｂ）参照）。第２図は、リン全
０８ＶＣシて１０１９〜１０２０Ｃｎ１″３ドーグし７
ｔｐＯ１ｙｓｉｉ水蒸気雰囲気で熱酸化（−１た時の酸
化条件と８１０２膜厚の関係を表わす特性図である。前
記熱酸化前のｐＯｌｙｓ１１の膜厚を”ｐＯｌｙｓ ＠
記熱酸化後の５ｉＯ２５の膜厚をｔｏｘ とすると、
前記熱酸化後のｐｏｌｙｓｉｌの膜厚はｔｐｏｌｙ−ｚ
ｔｏｘとなる。従って、前記熱酸化工程に続く工程で、
ｐｏｌｙｅｉｌ 、 ＳｉＯ□６ の膜厚全必ｄな厚さ
とするために、第２図全参照にして。Thermal oxidation (7, 81025 on po lys i I
f (see FIG. 1(b)). Figure 2 shows all phosphorus 08VC, 1019~1020Cn1''3 Dogue 7
tpOlysii is a characteristic diagram showing the relationship between oxidation conditions and 8102 film thickness when thermally oxidized (-1) in a water vapor atmosphere.The film thickness of pOlys11 before thermal oxidation is "pOlys@
Letting the film thickness of 5iO25 after thermal oxidation be tox,
The film thickness of polysil after the thermal oxidation is tpoly-z
It becomes tox. Therefore, in the step following the thermal oxidation step,
To ensure that the film thicknesses of polyeil and SiO□6 are all the required thicknesses, please refer to FIG.
熱酸化条１／４＝及びｔｐｏ１ｙ全決足すればよい。次
に、レジスト４ ｆ ５ｉ０２３ の土に、スビンコ
ー）４すどの方法により塗布し、たとえば紫外線を用Ａ
た公知のレジストバターニング方法によりレジスト４オ
バターニングする（ｍ１１図（Ｃ）参照）。次に、前Ｎ
Ｉ２ ハターニングレ１ζレジスト４をエツチングマス
クとして％ＨＦ系のエツチング液により５ｉＯ２３をエ
ツチングする（第１図（ａ）参照）。？′Ｋに、レジス
ト４ （５）（２Ｓｏ４とＦ１２ｏ２ の混合液など
の通常用いらすしているレジスト除去方法により取除く
（第１図（ｅ）参１１ｔｊ ）。レジスト４はプラズマ
を照射されていないので、除去は容易Ｖこ行なわれる。Thermal oxidation strip 1/4= and tpo1y should be fully resolved. Next, resist 4 f 5i023 is applied to the soil using a method such as Subinko), and exposed to ultraviolet rays, for example.
The resist is patterned four times using a known resist patterning method (see Fig. m11 (C)). Next, the previous N
5iO23 is etched with a HF-based etching solution using the I2 patterning layer 1ζ resist 4 as an etching mask (see FIG. 1(a)). ? 'K, resist 4 (5) is removed by a commonly used resist removal method such as a mixture of 2So4 and F12o2 (see Figure 1(e)).Resist 4 is not irradiated with plasma. Therefore, removal is easily performed.
次に、ＯＦ４などのガスＶＣ１ｕ周波′屯界を印加し７
て発生するプラズマを用いるドライエツチング法で、５
ｉ０２３をエツチングマスクとしてｐｏｌｙｅｉｉ
２エツチングする（第１図（ｆｏ）参照）。たとえばバ
レル型エツチング袈直を用いＯＦ４と０２を坏槓比１９
：１とした混合ガスケ用い、＾周波醒カｓｏｏｗ、ガス
流、１ｉ（２ｊＯｃｃ／分、圧力ｕ、６Ｔｏｒｒと（７
た時のｐ）Ｌｙｓｉのエツチング速度は、６０００１７
ｍｍ であるので、ＳｉＯ□３ｉｊｐｏｌｙｓｉ１ の
エツチングマスクとして十分用い得る。たとえば、前記
熱酸化後のｐｏ １１ｅ ｉ １の厚さが３００ＯＡの
場合は、エツチング時間は１分であυ、５ｉＯ２３の膜
べりは１００Ａであるので、約５ ＣＩ ＯＡＤＩ上の
厚さの５ｉＯ２３全形成してかｔすば、前記ドライエツ
チングは容易に行われる。Next, apply a gas VC1u frequency field such as OF4 and
A dry etching method using plasma generated by
Polyeii using i023 as an etching mask
2 etching (see Figure 1 (fo)). For example, using a barrel-type etching cutter, OF4 and 02 can be combined with an etching ratio of 19.
:Using a mixed gasket with a temperature of
The etching speed of p) Lysi is 600017 when
mm, it can be sufficiently used as an etching mask for SiO□3ijpolysi1. For example, if the thickness of po 11e i 1 after the thermal oxidation is 300OA, the etching time is 1 minute υ, and the film thickness of 5iO23 is 100A, so the entire thickness of 5iO23 of about 5 CI OADI is etched. Once formed, the dry etching can be easily performed.
（第１図（ｆｏ）と（ω参照） １だ、第２図より膜厚
５００λ以上の５１０２全形成するのはきわめて容易で
める。ｐｏｌｙｓｉｉエツチングする技術は、Ｓｉゲー
トＭ ＯＳの集積度が１す１す向上するにつれ・自１丁
記エツチングのドライ化は今後さらに重曹（でなるト考
工られ、本発明のエツチングマスクの形成方法の応用師
値は高い。(See Figure 1 (fo) and (ω)) 1. From Figure 2, it is extremely easy to completely form 5102 with a film thickness of 500λ or more. As technology improves, dry etching will be further developed using baking soda, and the application value of the etching mask forming method of the present invention will be high.
Ｓ ｉ ０２５ の形成方法は、ＣｖＤを用いてもよ
く。As a method for forming S i 025 , CvD may be used.
この場合、ＳｉＯ□３ 形成前後のｐｏｌｙｅｉｌの膜
厚が変化しないことｅよ明らかである。また、前記ｐｏ
１ｙｓｉ エツチングのマスクとして用いｆ（５ｉ０
２５は、ＩＪ Ｏｉ ｙ ｓ ｉエツチング後、除去せ
ずに中間絶は膜として用いることができる。また、ｍＪ
記ｐｏｌｙｓｉエツチング後に、ＨＦ系エツチング液に
よりＳｉ０２６を容易に除去し９ることは言う葦でもな
い。In this case, it is clear that the film thickness of the polyeil before and after the formation of SiO□3 does not change. In addition, the po
1ysi Used as an etching mask f(5i0
25 can be used as an intermediate film without being removed after IJ Oi y Si etching. Also, mJ
It is needless to say that Si026 can be easily removed with an HF-based etching solution after the polysilicon etching described above.
第１図（ａ）〜（ｇ）は１本晃明の半導体装置の製造方
広の一央！＃、賃１］の工（呈膓（ｔ／バず田１聞ト０
で４ｂす、第２図Ｑよ、ｐｏｌｙｓｉ の熱酸１ヒ！Ｆ
斤ｉＪＵユ図である。
１・・・・ｐｏｌｙｓｉ ２・・・・・・５１０２
６・・・・・・５１０２ ４・・・・・−レジスト
以上Figures 1 (a) to (g) are from Komei's method of manufacturing semiconductor devices! #, Rent 1)
So, 4b, Figure 2 Q, polysi hot acid 1! F
This is a diagram of 斤iJUyu. 1...polysi 2...5102
6...5102 4...-Resist or higher
Claims (1)
るエイ呈とｓＤｉ１Ｍ己帛２の【専膜全バターニングす
る工程と、バターニングされた前記第２の薄膜全マスク
として削ムピ第１０薄ｌ戻・ｔフラズマエッチングする
上程からなる半４４犀泗置の製造方法。 （２）前記第１０博１良を熱酸化することにより１１Ｊ
記第２の薄膜ケ形成すること全特徴とする特訂趙求の範
囲第１．［ＪＩ記載の半４坏装置の製造方法。 Ｌ３） Ｒｉｊ記第２の薄膜１０ＶＤにより形成する
ことを特徴とする特訂拍求の組曲第１項記載の半導体装
置の製造方法。 （４） 前記第１０薄ｊＩＡがポリシリコンであるこ
とをＱ’に徴とする特許請求の範囲第１項記載の半導体
装置の製造方法。 （尋 ｔｉ＋ｉ配Ｈ↓２の薄膜が准化シリコン膜である
こと金％徴とする一ｆｊｆＦ請求の範囲第１項記載の半
導体装置の製造方法。 （６） 前記第２の薄膜パターニング方法がＨＦ系エ
ツチング液によるエツチングであること（ｉ＝％徴とす
る特許請求の範囲第１項記載の製造方法。[Scope of Claims] ('11 A process for forming a first thin film disposed on a semiconductor substrate, and a step of completely patterning the entire second thin film that has been patterned. A method for manufacturing a semi-44-layer plate comprising the steps of removing the 10th thin film as a mask and performing plasma etching. (2) By thermally oxidizing the 10th layer,
The second thin film is formed as a special feature of the scope of the special edition by Zhao Qi. [Method for manufacturing a semi-four-piece device described in JI. L3) A method for manufacturing a semiconductor device according to Item 1 of Suite of Special Requests, characterized in that the second thin film of Rij is formed by 10VD. (4) The method for manufacturing a semiconductor device according to claim 1, wherein Q' is characterized in that the tenth thin JIA is polysilicon. (6) The method for manufacturing a semiconductor device according to claim 1, characterized in that the thin film with the ti+i distribution H↓2 is a parasitic silicon film. (6) The second thin film patterning method is performed using HF The manufacturing method according to claim 1, wherein the etching is performed using a base etching solution (i=%).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1182283A JPS59136931A (en) | 1983-01-27 | 1983-01-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1182283A JPS59136931A (en) | 1983-01-27 | 1983-01-27 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59136931A true JPS59136931A (en) | 1984-08-06 |
Family
ID=11788467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1182283A Pending JPS59136931A (en) | 1983-01-27 | 1983-01-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59136931A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0629311A (en) * | 1992-07-10 | 1994-02-04 | Yamaha Corp | Manufacture of semiconductor device |
| JP2002270831A (en) * | 2001-03-13 | 2002-09-20 | Fuji Electric Co Ltd | Method of manufacturing semiconductor device |
-
1983
- 1983-01-27 JP JP1182283A patent/JPS59136931A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0629311A (en) * | 1992-07-10 | 1994-02-04 | Yamaha Corp | Manufacture of semiconductor device |
| JP2002270831A (en) * | 2001-03-13 | 2002-09-20 | Fuji Electric Co Ltd | Method of manufacturing semiconductor device |
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