KR960043390A - Semiconductor laser manufacturing method - Google Patents

Semiconductor laser manufacturing method Download PDF

Info

Publication number
KR960043390A
KR960043390A KR1019950013486A KR19950013486A KR960043390A KR 960043390 A KR960043390 A KR 960043390A KR 1019950013486 A KR1019950013486 A KR 1019950013486A KR 19950013486 A KR19950013486 A KR 19950013486A KR 960043390 A KR960043390 A KR 960043390A
Authority
KR
South Korea
Prior art keywords
conductive type
layer
conductive
stripe pattern
cap layer
Prior art date
Application number
KR1019950013486A
Other languages
Korean (ko)
Other versions
KR100335074B1 (en
Inventor
양민
Original Assignee
구자홍
Lg 전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 구자홍, Lg 전자 주식회사 filed Critical 구자홍
Priority to KR1019950013486A priority Critical patent/KR100335074B1/en
Publication of KR960043390A publication Critical patent/KR960043390A/en
Application granted granted Critical
Publication of KR100335074B1 publication Critical patent/KR100335074B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/06—LPE

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발명은 반도체 레이저 제조방법에 관한 것으로, 반도체층간의 계면에 존재하는 불순물을 제거하기 위한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor laser, and is for removing impurities present at an interface between semiconductor layers.

본 발명은 제1도전형의 반도체기판위에 제1도전형의 클래드층, 활성층, 제2도전형의 클래드층 및 제2도전형의 캡층을 차례로 성장시키는 단계와, 상기 제2도전형의 캡층상에 소정의 폭을 갖는 스트라이프패턴을 형성하는 단계, 상기 스트라이프패턴을 마스크로 하여 상기 제2도전형 캡층, 제2도전형 클래드층, 활성층, 제1도전형 클래드층 및 기판의 일부까지 식각하는 단계, 상기 식각시 언더컷이 일어난 부분의 상기 스트라이프패턴부위를 제거하는 단계, LPE공정에 의해 상기 식각에 의해 제거된 적층구조의 측면을 멜트백시키고 연속해서 제2도전형의 클래드층, 제1도전형의 클래드층 및 제2도전형의 캡층을 차례로 성장시키는 단계, 상기 스트라이프패턴을 제거하는 단계, 및 상기 제2도전형 캡층 상부와 기판 하면에 각각 금속전극을 형성하는 단계로 이루어지는 반도체 레이저 제조방법을 제공한다.The present invention comprises the steps of growing a clad layer of a first conductive type, an active layer, a clad layer of a second conductive type, and a cap layer of a second conductive type on a semiconductor substrate of the first conductive type, and a cap layer shape of the second conductive type. Forming a stripe pattern having a predetermined width on the substrate, and etching the second conductive cap layer, the second conductive clad layer, the active layer, the first conductive clad layer, and a portion of the substrate using the stripe pattern as a mask; Removing the stripe pattern portion of the portion where the undercut has occurred during the etching; melting the side surface of the laminated structure removed by the etching by an LPE process, and subsequently performing the cladding layer of the second conductive type and the first conductive type. Growing a cladding layer and a cap layer of the second conductive type in order, removing the stripe pattern, and forming metal electrodes on the upper and lower surfaces of the second conductive cap layer, respectively. A semiconductor laser manufacturing method is provided.

Description

반도체 레이저 제조방법Semiconductor laser manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 의한 반도체 레이저 제조방법을 도시한 공정순서도.2 is a process flowchart showing a method for manufacturing a semiconductor laser according to the present invention.

Claims (1)

제1도전형의 반도체 기판위에 제1도전형의 클래드층, 활성층, 제2도전형의 클래드층 및 제2도전형의 캡층을 차례로 성장시키는 단계와, 상기 제2도전형의 캡층상에 소정의 폭을 갖는 스트라이프패턴을 형성하는 단계, 상기 스트라이프패턴을 마스크로 하여 상기 제2도전형 캡층, 제2도전형 클래드층, 활성층, 제1도전형 클래드층 및 기판의 일부까지 식각하는 단계, 상기 식각시 언더컷이 일어난 부분의 상기 스트라이프패턴부위를 제거하는 단계, LPE 공정에 의해 상기 식각에 의해 제거된 적층구조의 측면을 멜트백시키고 연속해서 제2도전형의 클래드층, 제1도전형의 클래드층 및 제2도전형의 캡층을 차례로 성장시키는 단계, 상기 스트라이프패턴을 제거하는 단계, 및 상기 제2도전형 캡층 상부와 기판 하면에 각각 금속전극을 형성하는 단계로 이루어지는 것을 특징으로 하는 반도체 레이저 제조방법.Growing a clad layer of the first conductive type, an active layer, a clad layer of the second conductive type, and a cap layer of the second conductive type on the semiconductor substrate of the first conductive type, and on the cap layer of the second conductive type, Forming a stripe pattern having a width, etching the second conductive cap layer, the second conductive clad layer, the active layer, the first conductive clad layer, and a portion of the substrate using the stripe pattern as a mask; Removing the stripe pattern portion of the portion where the sea undercut has occurred, melt-backing the side surface of the laminated structure removed by the etching by the LPE process, and subsequently, the clad layer of the second conductive type and the clad layer of the first conductive type And sequentially growing a second conductive cap layer, removing the stripe pattern, and forming a metal electrode on an upper surface of the second conductive cap layer and a lower surface of the substrate, respectively. Method for manufacturing a semiconductor laser, characterized in that. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950013486A 1995-05-26 1995-05-26 Method for manufacturing semiconductor laser KR100335074B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950013486A KR100335074B1 (en) 1995-05-26 1995-05-26 Method for manufacturing semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950013486A KR100335074B1 (en) 1995-05-26 1995-05-26 Method for manufacturing semiconductor laser

Publications (2)

Publication Number Publication Date
KR960043390A true KR960043390A (en) 1996-12-23
KR100335074B1 KR100335074B1 (en) 2002-10-25

Family

ID=37479740

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950013486A KR100335074B1 (en) 1995-05-26 1995-05-26 Method for manufacturing semiconductor laser

Country Status (1)

Country Link
KR (1) KR100335074B1 (en)

Also Published As

Publication number Publication date
KR100335074B1 (en) 2002-10-25

Similar Documents

Publication Publication Date Title
KR960043390A (en) Semiconductor laser manufacturing method
DE3877973D1 (en) LASER DIODE WITH BURNED ACTIVE LAYER AND LATERAL CURRENT LIMITATION AND METHOD FOR THE PRODUCTION THEREOF.
KR970018882A (en) Semiconductor laser diode and manufacturing method thereof
JP2961191B2 (en) Method of manufacturing surface emitting semiconductor laser device
US4686001A (en) Method for forming contact layer on semiconductor light emitting device
KR960006172A (en) Manufacturing method of laser diode
KR970024405A (en) Laser diode manufacturing method
KR100372768B1 (en) Method for fabricating laser diode
KR940001501A (en) Semiconductor laser diode and manufacturing method
KR950012902A (en) Semiconductor laser diode and manufacturing method thereof
JPH10104558A (en) Production of optical element
KR920009008A (en) Manufacturing method of laser diode
KR970029360A (en) How to make thin film magnetic head
KR970018883A (en) Laser diode manufacturing method
JPH01256185A (en) Manufacture of semiconductor laser device
JPH02114582A (en) Manufacture of semiconductor laser
KR940008178A (en) Embedded semiconductor laser diode
KR930015222A (en) Semiconductor laser diode and manufacturing method thereof
KR920019023A (en) Manufacturing method of semiconductor laser diode
JPH0629624A (en) Manufacture of semiconductor device having semiconductor layer using end surface as cleavage surface
KR970018885A (en) Laser diode manufacturing method
KR950007210A (en) Visible laser diode manufacturing method
KR930020786A (en) Laser diode and manufacturing method
KR920009010A (en) Manufacturing method of laser diode
KR960006169A (en) Manufacturing method of semiconductor laser for optical communication

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20070329

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee