KR960035860A - 스퍼터링 공정 웨이퍼 세척 방법 - Google Patents

스퍼터링 공정 웨이퍼 세척 방법 Download PDF

Info

Publication number
KR960035860A
KR960035860A KR1019960006438A KR19960006438A KR960035860A KR 960035860 A KR960035860 A KR 960035860A KR 1019960006438 A KR1019960006438 A KR 1019960006438A KR 19960006438 A KR19960006438 A KR 19960006438A KR 960035860 A KR960035860 A KR 960035860A
Authority
KR
South Korea
Prior art keywords
plasma
chamber
oxygen
silicon
silicon wafer
Prior art date
Application number
KR1019960006438A
Other languages
English (en)
Other versions
KR100386713B1 (ko
Inventor
킹-타이 간 케니
뉼만 제임
Original Assignee
제임스 조셉 드롱
어플라이드 머티어리얼스, 인코포레이타드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제임스 조셉 드롱, 어플라이드 머티어리얼스, 인코포레이타드 filed Critical 제임스 조셉 드롱
Publication of KR960035860A publication Critical patent/KR960035860A/ko
Application granted granted Critical
Publication of KR100386713B1 publication Critical patent/KR100386713B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

천연 실리콘 산화물의 층을 제거하기 위하여 실리콘 웨이퍼를 프리클린하는 방법은 약 3밀리토어 이하로 챔버의 압력을 유지하는 동안에, 상기 챔버의 캐소드에 세척되어 부착될 웨이퍼를 포함하는 플리즈마에칭 챔버에 아르곤과 산소의 혼합물을 플라즈마 에칭 챔버에 부가하는 것을 포함한다. 상기 산소는 단일 결정 실리콘 웨이퍼의 실리콘 원자가 아니라 플라즈마의 실리콘 원자와 반응하기 위하여 부가된다. 낮은 압력에서 플라즈마 산소의 존재는 웨이퍼 전체에 안정된 플라즈마 발생 및 균일 에칭을 보장한다.

Description

스퍼터링 공정 웨이퍼 세척 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 세척 가공을 수행하기 위한 플라즈마 에칭 챔버의 개략도.

Claims (4)

  1. 실리콘 웨이퍼의 표면으로부터 천연 실리콘 산화물을 제거하는 방법에 있어서, (a) rf 전력 공급장치에 접속된 진공 챔버의 캐소드위의 실리콘 웨이퍼를 배치하는 단계; b)약 3밀리토어 이하로 챔버 압력을 유지하는 단계;c)챔버에 아르곤과 산소 혼합물을 제공하는 단계; d)플라즈마에 존재하는 산소는 스프터된 실리콘 원자와 반응하도록 상기 챔버에 플라즈마를 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
  2. 제1항에 있어서, 스퍼터 에칭중에 기판의 온도는 약 500℃이하인 것을 특징으로 하는 방법.
  3. 제1항에 있어서, 상기 아르곤과 산소의 혼합물은 산소량의 약 5 내지 95 부피%를 포함하는 것을 특징으로 하는 방법.
  4. 제1항에 있어서, 상기 플라즈마는 상기 진공 챔버의 플라즈마 부분에 유도적으로 결합된 400KHz전력 공급 장치에 의해 형성되는 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960006438A 1995-03-13 1996-03-12 웨이퍼 세척 스퍼터링 방법 KR100386713B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/402676 1995-03-13
US08/402,676 US5759360A (en) 1995-03-13 1995-03-13 Wafer clean sputtering process

Publications (2)

Publication Number Publication Date
KR960035860A true KR960035860A (ko) 1996-10-28
KR100386713B1 KR100386713B1 (ko) 2003-08-21

Family

ID=23592902

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960006438A KR100386713B1 (ko) 1995-03-13 1996-03-12 웨이퍼 세척 스퍼터링 방법

Country Status (4)

Country Link
US (1) US5759360A (ko)
EP (1) EP0732732A3 (ko)
JP (1) JPH08321491A (ko)
KR (1) KR100386713B1 (ko)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69723566T2 (de) * 1997-12-17 2004-06-03 Tokyo Electron Ltd. Verfahren zur Behandlung eines Halbleitersubstrates
WO1999058739A1 (en) * 1998-05-12 1999-11-18 Applied Materials, Inc. Oxygen-argon gas mixture for precleaning in vacuum processing system
US6143144A (en) * 1999-07-30 2000-11-07 Tokyo Electronlimited Method for etch rate enhancement by background oxygen control in a soft etch system
US6255179B1 (en) 1999-08-04 2001-07-03 International Business Machines Corporation Plasma etch pre-silicide clean
TW514996B (en) * 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
TW503123B (en) * 2000-09-08 2002-09-21 Boc Group Inc Plasma drying and passivation of compressed gas cylinders
KR100421036B1 (ko) * 2001-03-13 2004-03-03 삼성전자주식회사 웨이퍼 처리 장치 및 이를 이용한 웨이퍼 처리 방법
US6798519B2 (en) * 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7166166B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US7137353B2 (en) * 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US7166200B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US7204912B2 (en) 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
KR100772740B1 (ko) 2002-11-28 2007-11-01 동경 엘렉트론 주식회사 플라즈마 처리 용기 내부재
WO2004095532A2 (en) * 2003-03-31 2004-11-04 Tokyo Electron Limited A barrier layer for a processing element and a method of forming the same
US7560376B2 (en) 2003-03-31 2009-07-14 Tokyo Electron Limited Method for adjoining adjacent coatings on a processing element
KR100560666B1 (ko) * 2003-07-07 2006-03-16 삼성전자주식회사 반도체 소자 제조용 금속막 증착 시스템 및 그 운용 방법
US7552521B2 (en) 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
CN101330020B (zh) * 2007-06-22 2010-05-19 中芯国际集成电路制造(上海)有限公司 一种晶圆缺陷的修复方法
CN102218705B (zh) * 2011-04-01 2012-10-31 苏州金宏气体股份有限公司 充装电子级超高纯气体的气瓶的处理方法
KR101657915B1 (ko) * 2012-08-31 2016-09-19 에바텍 어드벤스드 테크놀로지스 아크티엔게젤샤프트 질화 알루미늄층의 증착 방법
JP2016100343A (ja) * 2014-11-18 2016-05-30 株式会社ディスコ エッチング方法
US10651233B2 (en) * 2018-08-21 2020-05-12 Northrop Grumman Systems Corporation Method for forming superconducting structures
US20200203144A1 (en) * 2018-12-21 2020-06-25 Applied Materials, Inc. Methods of cleaning an oxide layer in a film stack to eliminate arcing during downstream processing
CN113539818B (zh) * 2021-07-16 2024-05-03 长鑫存储技术有限公司 半导体结构的制造方法及半导体器件蚀刻设备

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2547792C3 (de) * 1974-10-25 1978-08-31 Hitachi, Ltd., Tokio Verfahren zur Herstellung eines Halbleiterbauelementes
US4298443A (en) * 1979-08-09 1981-11-03 Bell Telephone Laboratories, Incorporated High capacity etching apparatus and method
US4326911A (en) * 1980-01-29 1982-04-27 Bell Telephone Laboratories, Incorporated Reactive ion etching of III-V compounds including InP, GaAs-InP and GaAlAs
JPS56158873A (en) * 1980-05-14 1981-12-07 Hitachi Ltd Dry etching method
FR2487808A1 (fr) * 1980-08-01 1982-02-05 Electricite De France Procede et dispositif d'elimination du bore dans le silicium par fusion de zone sous plasma reactif
US4585517A (en) * 1985-01-31 1986-04-29 Motorola, Inc. Reactive sputter cleaning of semiconductor wafer
JPS6221724A (ja) * 1985-07-19 1987-01-30 Furukawa Electric Co Ltd:The ガラスパイプの内面研磨方法
US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning
GB8629634D0 (en) * 1986-12-11 1987-01-21 Dobson C D Reactive ion & sputter etching
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
FR2616030A1 (fr) * 1987-06-01 1988-12-02 Commissariat Energie Atomique Procede de gravure ou de depot par plasma et dispositif pour la mise en oeuvre du procede
US4786359A (en) * 1987-06-24 1988-11-22 Tegal Corporation Xenon enhanced plasma etch
JP2758754B2 (ja) * 1991-12-05 1998-05-28 シャープ株式会社 プラズマエッチング方法
US5449432A (en) * 1993-10-25 1995-09-12 Applied Materials, Inc. Method of treating a workpiece with a plasma and processing reactor having plasma igniter and inductive coupler for semiconductor fabrication

Also Published As

Publication number Publication date
EP0732732A2 (en) 1996-09-18
US5759360A (en) 1998-06-02
EP0732732A3 (en) 1996-10-02
KR100386713B1 (ko) 2003-08-21
JPH08321491A (ja) 1996-12-03

Similar Documents

Publication Publication Date Title
KR960035860A (ko) 스퍼터링 공정 웨이퍼 세척 방법
US7569256B2 (en) Plasma CVD apparatus and dry cleaning method of the same
WO2002048428A1 (en) Method for forming thin film, article having thin film, optical film, dielectric coated electrode, and plasma discharge processor
KR940008021A (ko) 전자기 고주파(rf) 커플링을 사용하는 플라즈마 반응기 및 방법
WO2002023611A3 (en) Integration of silicon etch and chamber cleaning processes
JPS5684476A (en) Etching method of gas plasma
KR910008796A (ko) 고주파 반도체 웨이퍼 처리장치 및 방법
JPH11195641A (ja) プラズマ処理方法
TW353204B (en) Method of treating semiconductor substrate
JPS54124683A (en) Processing method of silicon wafer
EP0203560A1 (en) Plasma trench etch
JP3350973B2 (ja) プラズマ処理方法およびプラズマ処理装置
JPS6428925A (en) Formation of insulating film
JPS5515290A (en) Manufacturing method of semiconductor device
JPH11274143A (ja) ドライエッチング方法及び薄膜トランジスタの製造方法
JPH05343365A (ja) ドライエッチング方法
JPH0336908B2 (ko)
KR20010023762A (ko) 에칭 균일성 향상 장치 및 방법
KR950006973B1 (ko) 반도체 디바이스의 금속배선형성방법
KR960015791B1 (ko) 산화막 제거 가능한 메탈증착방법
JPH05234961A (ja) ドライエッチング方法
JPS5719376A (en) Plasma etching method
Bauer Process for the Production of Low Resistance Contacts
KR970077308A (ko) 플라즈마 식각공정에서의 파티클(particle)제거방법
JPS5647570A (en) Plasma etching method

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20070406

Year of fee payment: 5

LAPS Lapse due to unpaid annual fee