JPS5719376A - Plasma etching method - Google Patents
Plasma etching methodInfo
- Publication number
- JPS5719376A JPS5719376A JP9328480A JP9328480A JPS5719376A JP S5719376 A JPS5719376 A JP S5719376A JP 9328480 A JP9328480 A JP 9328480A JP 9328480 A JP9328480 A JP 9328480A JP S5719376 A JPS5719376 A JP S5719376A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- ccl
- single crystalline
- chamber
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To perform etching at high speed without causng side-etching by using CCl3F as a reactive gas when single crystalline Si or the like is worked by a plasma etching method.
CONSTITUTION: A material 6 to be etched is set on an electrode plate 2 in a reaction chamber 1, and the chamber 1 is evacuated to about 30mmTorr vacuum degree. CCl3F is introduced from a gas introducing pipe 4 as a reactive gas for etching to keep the internal vacuum degree of the chamber 1 at 0.1Torr, and by applying a high frequency voltage between both electrode plates 2, 3, plasma of CCl3F is produced to perform etching. Thus, single crystalline Si as the material 6 or polycrystalline Si, silicon nitride or the like on a single crystalline Si substrate can be worked finely and precisely without causing side-etching.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9328480A JPS5719376A (en) | 1980-07-10 | 1980-07-10 | Plasma etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9328480A JPS5719376A (en) | 1980-07-10 | 1980-07-10 | Plasma etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5719376A true JPS5719376A (en) | 1982-02-01 |
Family
ID=14078113
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9328480A Pending JPS5719376A (en) | 1980-07-10 | 1980-07-10 | Plasma etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5719376A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4803409A (en) * | 1983-02-10 | 1989-02-07 | Fuji Photo Film Co. Ltd. | Acceleration signal corrected motor speed control system |
-
1980
- 1980-07-10 JP JP9328480A patent/JPS5719376A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4803409A (en) * | 1983-02-10 | 1989-02-07 | Fuji Photo Film Co. Ltd. | Acceleration signal corrected motor speed control system |
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