JPS5719376A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS5719376A
JPS5719376A JP9328480A JP9328480A JPS5719376A JP S5719376 A JPS5719376 A JP S5719376A JP 9328480 A JP9328480 A JP 9328480A JP 9328480 A JP9328480 A JP 9328480A JP S5719376 A JPS5719376 A JP S5719376A
Authority
JP
Japan
Prior art keywords
etching
ccl
single crystalline
chamber
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9328480A
Other languages
Japanese (ja)
Inventor
Masakatsu Kimizuka
Kazuo Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9328480A priority Critical patent/JPS5719376A/en
Publication of JPS5719376A publication Critical patent/JPS5719376A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To perform etching at high speed without causng side-etching by using CCl3F as a reactive gas when single crystalline Si or the like is worked by a plasma etching method.
CONSTITUTION: A material 6 to be etched is set on an electrode plate 2 in a reaction chamber 1, and the chamber 1 is evacuated to about 30mmTorr vacuum degree. CCl3F is introduced from a gas introducing pipe 4 as a reactive gas for etching to keep the internal vacuum degree of the chamber 1 at 0.1Torr, and by applying a high frequency voltage between both electrode plates 2, 3, plasma of CCl3F is produced to perform etching. Thus, single crystalline Si as the material 6 or polycrystalline Si, silicon nitride or the like on a single crystalline Si substrate can be worked finely and precisely without causing side-etching.
COPYRIGHT: (C)1982,JPO&Japio
JP9328480A 1980-07-10 1980-07-10 Plasma etching method Pending JPS5719376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9328480A JPS5719376A (en) 1980-07-10 1980-07-10 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9328480A JPS5719376A (en) 1980-07-10 1980-07-10 Plasma etching method

Publications (1)

Publication Number Publication Date
JPS5719376A true JPS5719376A (en) 1982-02-01

Family

ID=14078113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9328480A Pending JPS5719376A (en) 1980-07-10 1980-07-10 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS5719376A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4803409A (en) * 1983-02-10 1989-02-07 Fuji Photo Film Co. Ltd. Acceleration signal corrected motor speed control system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4803409A (en) * 1983-02-10 1989-02-07 Fuji Photo Film Co. Ltd. Acceleration signal corrected motor speed control system

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