KR960030384A - 열응력을 흡수하기 위한 중앙 슬릿 패턴과 주변 슬릿 패턴을 갖는 터브상에 장착된 반도체 장치 - Google Patents

열응력을 흡수하기 위한 중앙 슬릿 패턴과 주변 슬릿 패턴을 갖는 터브상에 장착된 반도체 장치 Download PDF

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KR960030384A
KR960030384A KR1019960001621A KR19960001621A KR960030384A KR 960030384 A KR960030384 A KR 960030384A KR 1019960001621 A KR1019960001621 A KR 1019960001621A KR 19960001621 A KR19960001621 A KR 19960001621A KR 960030384 A KR960030384 A KR 960030384A
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다까히로 에구찌
야스히로 스즈끼
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가네꼬 히사시
닛뽕덴끼 가부시끼가이샤
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Abstract

본 발명은 열응력을 흡수하기 위한 중앙 슬릿 패턴과 주변 슬릿 패턴을 갖는 터브상에 장착된 반도체 장치에 관한 것으로서, 반도체 칩(10)을 장착하기 위한 리드-프레임(11)의 터브(11a)에 다수의 슬릿(11i/11n,11j/11o,11k/11p,11m/11q)이 형성되어, 반도체 칩으로 커버되지 않은 터브의 주변 소영역들(11ha/11hh/11ha)의 길이를 거의 균등하게 하는 방식으로 배열됨으로써, 터브(11a), 반도체 칩(10) 및 이 반도체 칩을 밀봉하는 플라스틱 패키지 사이의 열팽창 계수의 차이로 인한 수축 및 신장을 효과적으로 흡수한다.

Description

열응력을 흡수하기 위한 중앙 슬릿 패턴과 주변 슬릿 패턴을 갖는 터브상에 장착된 반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 따른 반도체 장치를 나타내는 사시도.

Claims (8)

  1. 전기회로를 갖는 반도체 칩(10;20); 터브(11a;21a)를 포함하는 지지수단(11;21)으로서, 상기 터브는, 주변연부들(21f/21g/21h/21i)에 의해 한정되어 상기 반도체 칩(10;20)을 장착하는 주면, 상기 터브(11a;21a)의 주면과 배면으로 개방되어 상기 주면을 중앙영역(11g;21j) 및 주변영역(11h;21k)으로 분할하도록 상기 터브(11a;21a)에 형성되어, 상기 반도체 칩(10;20)이 상기 중앙영역(11g;21j) 및 상기 주변영역(10h;21k)의 내부 주변 소영역을 점유하는 제1슬릿 패턴(11c/11d/11e/11f;21f/21g/21h/21i), 및 상기 주변연부로부터 내측으로 돌출하는 슬릿 군을 가지는 지지수단(11;21); 그리고 상기 반도체 칩(10;20)을 오물로부터 보호하도록 상기 터브(10a;20a)상에 장착된 상기 반도체 칩(10;20) 둘레에 제공된 밀봉 수단(12;22)을 구비하는 반도체 장치에 있어서, 상기 슬릿 군은 상기 주변연부(21f-21i)와 각각 관련된 다수의 슬릿소군(11i/11n,11j/11o,11k/11p,11m/11q;21ma/21mb,21na/21nb,21oa/21ob,21pa/21pb)을 포함하고, 상기 다수의 슬릿 소군(11i/11n,11j/11o,11k/11p,11m/11q;21ma/21mb,21na/21nb,21oa/21ob,21pa/21pb)은 상기 주변연부중 관련 연부로부터 상기 외부 주변 소영역을 통해 상기 내부 주변 소영역으로 내측으로 돌출하여 상기 주변연부들중 관련연부를 따라 상기 외부 주변 소영역의 부분을 다수의 부분(11hg/11hh/11ha)으로 분할하는 다수의 슬릿을 각각 가지며, 상기 제1슬릿 패턴(11c-11f; 21f-21i)과 상기 다수의 슬릿 소군(11i/11n,11j/11o,11k/11p,11m/11q;21ma/21mb,21na/21nb,21oa/21ob,21pa/21pb)은 서로 대향하는 두개의 상기 주변연부(21f/21g 또는 21h/21i) 사이의 직선 방향으로의 힘 및 상기 주면상의 대각선 방향으로의 힘을 2회이상 차단하는 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 상기 다수의 부분(11hg/11hh/11ha)은 상기 주변연부들중 상기 관련연부의 방향으로 길이가 거의 동일한 것을 특징으로 하는 반도체 장치.
  3. 제1항에 있어서, 상기 다수의 슬릿 소군(11i/11n,11j/11o,11k/11p,11m/11q;21ma/21mb,21na/21nb,21oa/21ob,21pa/21pb) 각각에는 두개의 슬릿이 포함되어 상기 외부 주변 소영역의 상기 부분을 3개의 부분(11hg/11hh/11ha)으로 분할하는 것을 특징으로 하는 반도체 장치.
  4. 제3항에 있어서, 상기3개의 부분(11hg/11hh/11ha)은 상기 주변연부들중 상기 관련연부의 방향으로 길이가 거의 동일한 것을 특징으로 하는 반도체 장치.
  5. 제1항에 있어서, 상기 제1슬릿 패턴은 상기 주변연부들중 하나에 평행한 제1슬릿(11f), 이 제1슬릿에 평행하게 떨어져서 어긋나있는 제2슬릿(11e), 상기 제1 및 제2슬릿(11f/1e)에 수직한 제3슬릿(11d) 및 이 제3슬릿(11d)에 평행하게 떨어져서 어긋나 있는 제4슬릿(11c)을 가짐으로써 상기 중앙영역(11g)을 장방형의 형상으로 만들고, 상기 제1 내지 제4슬릿은 상기 주변영역으로 돌출하는 각자의 부분을 가지며, 상기 다수의 슬릿 소군(11i/11n)중 하나의 상기 다수의 슬릿을 상기 각자의 부분에 평행하게 신장하여 상기 다수의 부분들중 하나(11hg)를 상기 다수의 부분들중 다른 하나(hh)에 접속하는 크랭크형 부분을 형성하는 것을 특징으로 하는 반도체 장치.
  6. 제1항에 있어서, 상기 주면 및 상기 배면으로 개방되어 상기 주변영역에 형성된 제2슬릿 패턴(21q-21t)을 더 포함함으로써, 상기 제1슬릿 패턴(21f-21i), 상기 제2슬릿 패턴(21q-21t) 및 상기 다수의 슬릿 소군(21ma/21mb,21na/21nb,21oa/21ob,21pa/21pb)은 상기 직선 방향으로서의 상기 힘 및 상기 주면상의 대각선 방향으로의 상기 함을 2회이상 차단하는 것을 특징으로 하는 반도체 장치.
  7. 제6항에 있어서, 두쌍의 슬릿(21f/21g 및 21h/21i)이 상기 제1슬릿 패턴을 구성하여 상기 중앙영역(21j)을 장방형 형상으로 만들고, 4개의 십자형 슬릿들(21q-21t)이 상기 중앙영역(21j)의 네모서리 외부에 마련되어 상기 제2슬릿 패턴을 형성하는 것을 특징으로 하는 반도체장치.
  8. 제7항에 있어서, 각각의 상기 십자형 슬릿(21q)은 상기 주변연부들중 한 연부(21f)에 수직한 제1슬릿(21u) 및 이 제1슬릿(21u)과 교차하여 상기 주변연부들중 상기 한 연부(21f)에 평행하게 신장하는 제2슬릿(21v)을 가지며, 상기 다수의 슬릿(21ma/21mb)중 하나는 상기 제1슬릿(21u)에 평행하게 상기 주변연부들중 상기 한 연부(21f)로부터 상기 제2슬릿(21v)쪽으로 돌출하여 상기 다수의 부분들중 인접하는 부분들을 서로 접속하는 크랭크형 부분(21w)을 형성하는 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960001621A 1995-01-25 1996-01-25 열응력을 흡수하기 위한 중앙 슬릿 패턴과 주변 슬릿 패턴을 갖는 터브상에 장착된 반도체 장치 KR100217159B1 (ko)

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