KR960022673U - 저압 화학 기상 증착장치 - Google Patents
저압 화학 기상 증착장치Info
- Publication number
- KR960022673U KR960022673U KR2019940036812U KR19940036812U KR960022673U KR 960022673 U KR960022673 U KR 960022673U KR 2019940036812 U KR2019940036812 U KR 2019940036812U KR 19940036812 U KR19940036812 U KR 19940036812U KR 960022673 U KR960022673 U KR 960022673U
- Authority
- KR
- South Korea
- Prior art keywords
- vapor deposition
- low pressure
- chemical vapor
- pressure chemical
- deposition device
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019940036812U KR0117107Y1 (ko) | 1994-12-28 | 1994-12-28 | 저압 화학 기상 증착장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019940036812U KR0117107Y1 (ko) | 1994-12-28 | 1994-12-28 | 저압 화학 기상 증착장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960022673U true KR960022673U (ko) | 1996-07-20 |
KR0117107Y1 KR0117107Y1 (ko) | 1998-04-23 |
Family
ID=19403535
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR2019940036812U KR0117107Y1 (ko) | 1994-12-28 | 1994-12-28 | 저압 화학 기상 증착장치 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0117107Y1 (ko) |
-
1994
- 1994-12-28 KR KR2019940036812U patent/KR0117107Y1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR0117107Y1 (ko) | 1998-04-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
REGI | Registration of establishment | ||
FPAY | Annual fee payment |
Payment date: 20090102 Year of fee payment: 12 |
|
EXPY | Expiration of term |