KR960002692U - 저압 화학 증기 증착장치 - Google Patents
저압 화학 증기 증착장치Info
- Publication number
- KR960002692U KR960002692U KR2019940013732U KR19940013732U KR960002692U KR 960002692 U KR960002692 U KR 960002692U KR 2019940013732 U KR2019940013732 U KR 2019940013732U KR 19940013732 U KR19940013732 U KR 19940013732U KR 960002692 U KR960002692 U KR 960002692U
- Authority
- KR
- South Korea
- Prior art keywords
- vapor deposition
- low pressure
- chemical vapor
- pressure chemical
- deposition equipment
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019940013732U KR0116697Y1 (ko) | 1994-06-14 | 1994-06-14 | 저압 화학 증기 증착장치 |
JP6163179A JP2805589B2 (ja) | 1994-01-27 | 1994-06-22 | 低圧化学蒸着装置 |
TW083105792A TW276350B (ko) | 1993-06-22 | 1994-06-25 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019940013732U KR0116697Y1 (ko) | 1994-06-14 | 1994-06-14 | 저압 화학 증기 증착장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960002692U true KR960002692U (ko) | 1996-01-22 |
KR0116697Y1 KR0116697Y1 (ko) | 1998-04-22 |
Family
ID=19385504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR2019940013732U KR0116697Y1 (ko) | 1993-06-22 | 1994-06-14 | 저압 화학 증기 증착장치 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0116697Y1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100568536B1 (ko) * | 2000-01-19 | 2006-04-07 | 삼성전자주식회사 | 반도체 소자 제조용 수직 확산로 |
-
1994
- 1994-06-14 KR KR2019940013732U patent/KR0116697Y1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100568536B1 (ko) * | 2000-01-19 | 2006-04-07 | 삼성전자주식회사 | 반도체 소자 제조용 수직 확산로 |
Also Published As
Publication number | Publication date |
---|---|
KR0116697Y1 (ko) | 1998-04-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
REGI | Registration of establishment | ||
FPAY | Annual fee payment |
Payment date: 20090102 Year of fee payment: 12 |
|
EXPY | Expiration of term |