KR940008658U - 투-핫-존(two-hot-zone) 저압 화학기상증착 장치 - Google Patents
투-핫-존(two-hot-zone) 저압 화학기상증착 장치Info
- Publication number
- KR940008658U KR940008658U KR2019920016610U KR920016610U KR940008658U KR 940008658 U KR940008658 U KR 940008658U KR 2019920016610 U KR2019920016610 U KR 2019920016610U KR 920016610 U KR920016610 U KR 920016610U KR 940008658 U KR940008658 U KR 940008658U
- Authority
- KR
- South Korea
- Prior art keywords
- hot
- vapor deposition
- low pressure
- chemical vapor
- pressure chemical
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR92016610U KR950007250Y1 (ko) | 1992-09-01 | 1992-09-01 | 투-핫-존(two-hot-zone) 저압 화학기상증착 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR92016610U KR950007250Y1 (ko) | 1992-09-01 | 1992-09-01 | 투-핫-존(two-hot-zone) 저압 화학기상증착 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940008658U true KR940008658U (ko) | 1994-04-21 |
KR950007250Y1 KR950007250Y1 (ko) | 1995-09-04 |
Family
ID=19339419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR92016610U KR950007250Y1 (ko) | 1992-09-01 | 1992-09-01 | 투-핫-존(two-hot-zone) 저압 화학기상증착 장치 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950007250Y1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100525447B1 (ko) * | 1996-11-18 | 2005-12-26 | 매그나칩 반도체 유한회사 | 화학기상증착장치및이를이용한화학기상증착공정제어방법 |
-
1992
- 1992-09-01 KR KR92016610U patent/KR950007250Y1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100525447B1 (ko) * | 1996-11-18 | 2005-12-26 | 매그나칩 반도체 유한회사 | 화학기상증착장치및이를이용한화학기상증착공정제어방법 |
Also Published As
Publication number | Publication date |
---|---|
KR950007250Y1 (ko) | 1995-09-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
REGI | Registration of establishment | ||
FPAY | Annual fee payment |
Payment date: 20010807 Year of fee payment: 7 |
|
LAPS | Lapse due to unpaid annual fee |