KR940008658U - 투-핫-존(two-hot-zone) 저압 화학기상증착 장치 - Google Patents

투-핫-존(two-hot-zone) 저압 화학기상증착 장치

Info

Publication number
KR940008658U
KR940008658U KR2019920016610U KR920016610U KR940008658U KR 940008658 U KR940008658 U KR 940008658U KR 2019920016610 U KR2019920016610 U KR 2019920016610U KR 920016610 U KR920016610 U KR 920016610U KR 940008658 U KR940008658 U KR 940008658U
Authority
KR
South Korea
Prior art keywords
hot
vapor deposition
low pressure
chemical vapor
pressure chemical
Prior art date
Application number
KR2019920016610U
Other languages
English (en)
Other versions
KR950007250Y1 (ko
Inventor
이길광
안용철
정우인
Original Assignee
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사 filed Critical 삼성전자 주식회사
Priority to KR92016610U priority Critical patent/KR950007250Y1/ko
Publication of KR940008658U publication Critical patent/KR940008658U/ko
Application granted granted Critical
Publication of KR950007250Y1 publication Critical patent/KR950007250Y1/ko

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
KR92016610U 1992-09-01 1992-09-01 투-핫-존(two-hot-zone) 저압 화학기상증착 장치 KR950007250Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR92016610U KR950007250Y1 (ko) 1992-09-01 1992-09-01 투-핫-존(two-hot-zone) 저압 화학기상증착 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR92016610U KR950007250Y1 (ko) 1992-09-01 1992-09-01 투-핫-존(two-hot-zone) 저압 화학기상증착 장치

Publications (2)

Publication Number Publication Date
KR940008658U true KR940008658U (ko) 1994-04-21
KR950007250Y1 KR950007250Y1 (ko) 1995-09-04

Family

ID=19339419

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92016610U KR950007250Y1 (ko) 1992-09-01 1992-09-01 투-핫-존(two-hot-zone) 저압 화학기상증착 장치

Country Status (1)

Country Link
KR (1) KR950007250Y1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100525447B1 (ko) * 1996-11-18 2005-12-26 매그나칩 반도체 유한회사 화학기상증착장치및이를이용한화학기상증착공정제어방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100525447B1 (ko) * 1996-11-18 2005-12-26 매그나칩 반도체 유한회사 화학기상증착장치및이를이용한화학기상증착공정제어방법

Also Published As

Publication number Publication date
KR950007250Y1 (ko) 1995-09-04

Similar Documents

Publication Publication Date Title
DE69411811D1 (de) Dreieckige Kammer für Aufdampfungs-Anlage
DE69205494D1 (de) Beschichtungssystem zur plasmachemischen Gasphasenabscheidung.
EP0591082A3 (en) System and method for directional low pressure chemical vapor deposition
EP0418554A3 (en) Chemical vapor deposition system
DE59406727D1 (de) Vakuumbeschichtungsanlage
KR940008658U (ko) 투-핫-존(two-hot-zone) 저압 화학기상증착 장치
KR940027591U (ko) 저압화학기상증착 시스템의 부산물 제거장치
KR970015293U (ko) 대기압식 화학기상증착장치
KR950025872U (ko) 종형 플라즈마 저압 화학 증기 증착장치
KR970046641U (ko) 화학기상증착장치
KR970056052U (ko) 화학기상증착장치
KR970056051U (ko) 화학기상증착장치
KR970056053U (ko) 수평식 저압 화학기상 증착장치
KR960027782U (ko) 저압화학기상증착 장치
KR960002692U (ko) 저압 화학 증기 증착장치
KR960025282U (ko) 저압화학기상증착장치
KR950028660U (ko) 저압 화학 기상 증착장치
KR950021369U (ko) 저압화학기상증착장비
KR950021368U (ko) 저압화학기상증착장비
KR940023545U (ko) 저압화학증착 장치
KR940023562U (ko) 저압화학증착 장비의 배기장치
KR960027781U (ko) 화학기상증착장치
KR970056046U (ko) 수평식 저압 화학기상 증착장치
KR930022407U (ko) 저압화학 기상증착 시스템의 진공조절장치
KR950020494U (ko) 상압 화학 기상 증착 장비의 배기장치

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
REGI Registration of establishment
FPAY Annual fee payment

Payment date: 20010807

Year of fee payment: 7

LAPS Lapse due to unpaid annual fee