KR950021729A - 터널 다이오드 및 메모리 소자 - Google Patents
터널 다이오드 및 메모리 소자 Download PDFInfo
- Publication number
- KR950021729A KR950021729A KR1019940033406A KR19940033406A KR950021729A KR 950021729 A KR950021729 A KR 950021729A KR 1019940033406 A KR1019940033406 A KR 1019940033406A KR 19940033406 A KR19940033406 A KR 19940033406A KR 950021729 A KR950021729 A KR 950021729A
- Authority
- KR
- South Korea
- Prior art keywords
- tunnel diode
- ferroelectric material
- electrode
- barrier
- dielectric
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 claims abstract 8
- 239000000463 material Substances 0.000 claims abstract 8
- 230000010287 polarization Effects 0.000 claims abstract 7
- 239000012212 insulator Substances 0.000 claims abstract 4
- 230000005641 tunneling Effects 0.000 claims abstract 2
- 239000013078 crystal Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
- G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5657—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using ferroelectric storage elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0895—Tunnel injectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Abstract
본 발명은, 두개의 금속질의 전도성 전극들 사이에 절연성 유전체(3)가 삽입되며, 이 유전체는 전자에 대한 장벽 레벨(barrier level)을 가지는 장벽을 형성하고, 또한 이 유전체는 전자들이 임계전압보다 휠씬 큰 전압에서 한 전극으로부터 다른 전극으로 장벽을 통해 터널링할 수 있게 하는 두께를 가지는 터널 다이오드에 관한 것이다.
이러한 터널 다이오드는 메모리가 없다는 단점을 가진다. 이 터널 다이오드는 많은 응용 분야에서 어떤 스위칭상태, 즉 개방(open)/폐쇄(closed)를 유지하는데 바람직하다. 본 발명에 따르면, 터널 다이오드는 절연체(3)가 실온에서 장벽 레벨에 영향을 미치는 잔류 분극을 가지는 강유전성 물질층으로 이루어지는 것을 특징으로 하고 있다. 따라서, 절연체(3)의 잔류 분극에 따라서 다양한 스위칭상태를 가진 터널 다이오드가 성취된다. 이 스위칭 상태는 절연체(3)의 분극이 변경될 때까지 유지된다.
[선택도] 제1도
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 터널 다이오드를 도시한 도면.
제3도는 본 발명에 따른 터널 다이오드의 전류-전압 특성을 도시한 도면.
Claims (11)
- 두개의 금속질의 전도성 전극들 사이에 절연성 유전체가 삽입되며, 이 유전체는 전자에 대한 장벽 레벨을 가지는 장벽을 형성하고, 또한 이 유전체는 전자들이 임계전압보다 휠씬 큰 전압에서 한 전극으로부터 다른 전극으로 장벽을 통해 터널링할 수 있게 하는 두께를 가지는 터널 다이오드에 있어서, 상기 유전체는 실온에서 강유전성의 물질층을 포함하며, 상기 유전체의 전류분극은 상기 장벽 레벨을 변화시키는 것을 특징으로 하는 터널 다이오드.
- 제1항에 있어서, 상기 강유전성 물질층의 두께가 100Å보다 작은 것을 특징으로 하는 터널 다이오드.
- 제1항 또는 제2항에 있어서, 상기 강유전성 물질층의 두께가 20Å보다 큰 것을 특징으로 하는 터널 다이오드.
- 제1항 내지 제3항중의 어느 한 항에 있어서, 상기 잔류분극의 가장 큰 성분의 방향은 실질적으로 평행판에 수직한 것을 특징으로 하는 터널 다이오드.
- 제1항 내지 제4항중의 어느 한 항에 있어서, 상기 강유전성 물질층이 단결정, 금속질의 전도성 산화물로 이루어진 전극상에 에피텍셜적으로 제공되는 것을 특징으로 하는 터널 다이오드.
- 제5항에 있어서, 상기 금속질의 전도성 전극이 단결정 기판상에 제공되는 것을 특징으로 하는 터널 다이오드.
- 제1항 내지 제6항중의 어느 한 항에 있어서, 상기 절연체는 상이한 스위칭 전계에서 잔류분극 방향을 변경시키는 두 개 또는 그 이상의 상기 강유전성 물질층을 포함하는 것을 특징으로 하는 터널 다이오드.
- 제1항 내지 제7항중의 어느 한 항에 있어서, 하나의 전극상에 강유전성 물질과 전극으로 된 층이 1회이상 제공되어, 직렬로 접속된 다수의 다이오드를 포함하는 것을 특징으로 하는 터널 다이오드.
- 제8에 있어서, 상기 층들은 상이한 상기 스위칭 전계에서 잔류분극 방향을 변경하는 상이한 강유전성 물질로 이루어진 것을 특징으로 하는 터널 다이오드.
- 제1항 내지 제9중의 어느 한 항에 청구된 터널 다이오드를 포함하는 것을 특징으로 하는 메모리 소자.
- ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE9301369A BE1007865A3 (nl) | 1993-12-10 | 1993-12-10 | Tunnel schakelelement met verschillende blijvende schakeltoestanden. |
BE09301369 | 1993-12-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950021729A true KR950021729A (ko) | 1995-07-26 |
Family
ID=3887627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940033406A KR950021729A (ko) | 1993-12-10 | 1994-12-09 | 터널 다이오드 및 메모리 소자 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5541422A (ko) |
EP (1) | EP0657936B1 (ko) |
JP (1) | JP3950179B2 (ko) |
KR (1) | KR950021729A (ko) |
CN (1) | CN1041364C (ko) |
BE (1) | BE1007865A3 (ko) |
DE (1) | DE69428577T2 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9425329B2 (en) | 2013-05-21 | 2016-08-23 | Daegu Gyeongbuk Institute Of Science & Technology | Rectifying device and method for manufacturing the same |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06334140A (ja) * | 1992-12-16 | 1994-12-02 | Ricoh Co Ltd | 強誘電体材料および該材料を用いた半導体メモリ、光記録媒体ならびに微小変位制御素子 |
KR970076816A (ko) * | 1996-05-06 | 1997-12-12 | 김광호 | 누설 전류를 이용한 다진법 강유전체 랜덤 액세서 메모리 |
US6091077A (en) * | 1996-10-22 | 2000-07-18 | Matsushita Electric Industrial Co., Ltd. | MIS SOI semiconductor device with RTD and/or HET |
US6548843B2 (en) * | 1998-11-12 | 2003-04-15 | International Business Machines Corporation | Ferroelectric storage read-write memory |
US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
AU2001264987A1 (en) * | 2000-06-30 | 2002-01-14 | Motorola, Inc., A Corporation Of The State Of Delware | Hybrid semiconductor structure and device |
US6555946B1 (en) | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
US6501121B1 (en) | 2000-11-15 | 2002-12-31 | Motorola, Inc. | Semiconductor structure |
DE10059357A1 (de) * | 2000-11-29 | 2002-06-13 | Forschungszentrum Juelich Gmbh | Verfahren zur Erzeugung eines Tunnelkontaktes sowie Vorrichtung umfassend Mittel zur Erzeugung eines Tunnelkontaktes |
US6673646B2 (en) * | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US20030015708A1 (en) * | 2001-07-23 | 2003-01-23 | Primit Parikh | Gallium nitride based diodes with low forward voltage and low reverse current operation |
US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
JP3902023B2 (ja) * | 2002-02-19 | 2007-04-04 | セイコーエプソン株式会社 | 圧電アクチュエータ、液滴噴射ヘッド、およびそれを用いた液滴噴射装置 |
DE10250357A1 (de) * | 2002-10-29 | 2004-05-19 | Infineon Technologies Ag | Ferroelektrische Speicherzelle |
DE10303316A1 (de) * | 2003-01-28 | 2004-08-12 | Forschungszentrum Jülich GmbH | Schneller remanenter Speicher |
US7759713B2 (en) * | 2006-03-06 | 2010-07-20 | Ut-Battelle, Llc | Ferroelectric tunneling element and memory applications which utilize the tunneling element |
US7548455B2 (en) | 2006-05-05 | 2009-06-16 | Rochester Institute Of Technology | Multi-valued logic/memory cells and methods thereof |
FR2946788B1 (fr) * | 2009-06-11 | 2016-11-11 | Thales Sa | Dispositif a resistance ajustable. |
US8586959B2 (en) * | 2010-04-28 | 2013-11-19 | Hewlett-Packard Development Company, L.P. | Memristive switch device |
TWI422042B (zh) * | 2010-11-26 | 2014-01-01 | Univ Nat Chiao Tung | 二極體元件及其製作方法 |
FR2973553B1 (fr) | 2011-03-31 | 2013-03-29 | Thales Sa | Procédé de mise en oeuvre d'une jonction tunnel ferroelectrique, dispositif comprenant une jonction tunnel ferroelectrique et utilisation d'un tel dispositif |
US9318315B2 (en) * | 2013-07-15 | 2016-04-19 | Globalfoundries Inc. | Complex circuit element and capacitor utilizing CMOS compatible antiferroelectric high-k materials |
JP6273384B2 (ja) * | 2014-08-19 | 2018-01-31 | サビック グローバル テクノロジーズ ビー.ブイ. | マルチレベル動作を有する不揮発性強誘電体メモリセル |
JP6813844B2 (ja) * | 2016-09-30 | 2021-01-13 | 国立研究開発法人産業技術総合研究所 | トンネル接合素子及び不揮発性メモリ素子 |
CN110707148B (zh) * | 2019-09-02 | 2021-08-17 | 华南师范大学 | 外延晶片、外延晶片制造方法、二极管及整流器 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5206788A (en) * | 1991-12-12 | 1993-04-27 | Ramtron Corporation | Series ferroelectric capacitor structure for monolithic integrated circuits and method |
-
1993
- 1993-12-10 BE BE9301369A patent/BE1007865A3/nl not_active IP Right Cessation
-
1994
- 1994-12-05 EP EP94203528A patent/EP0657936B1/en not_active Expired - Lifetime
- 1994-12-05 DE DE69428577T patent/DE69428577T2/de not_active Expired - Lifetime
- 1994-12-09 KR KR1019940033406A patent/KR950021729A/ko not_active Application Discontinuation
- 1994-12-09 CN CN94113094A patent/CN1041364C/zh not_active Expired - Fee Related
- 1994-12-09 JP JP30643494A patent/JP3950179B2/ja not_active Expired - Fee Related
- 1994-12-12 US US08/353,844 patent/US5541422A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9425329B2 (en) | 2013-05-21 | 2016-08-23 | Daegu Gyeongbuk Institute Of Science & Technology | Rectifying device and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JPH07202227A (ja) | 1995-08-04 |
CN1109639A (zh) | 1995-10-04 |
EP0657936A1 (en) | 1995-06-14 |
US5541422A (en) | 1996-07-30 |
JP3950179B2 (ja) | 2007-07-25 |
DE69428577D1 (de) | 2001-11-15 |
DE69428577T2 (de) | 2002-06-27 |
BE1007865A3 (nl) | 1995-11-07 |
EP0657936B1 (en) | 2001-10-10 |
CN1041364C (zh) | 1998-12-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR950021729A (ko) | 터널 다이오드 및 메모리 소자 | |
KR950021480A (ko) | 스위칭 소자 및 메모리 소자 | |
US3719866A (en) | Semiconductor memory device | |
Tanaka et al. | Giant electric field modulation of double exchange ferromagnetism at room temperature in the perovskite manganite/titanate p− n junction | |
KR100433623B1 (ko) | 급격한 금속-절연체 상전이를 이용한 전계 효과 트랜지스터 | |
KR101015759B1 (ko) | 전기 쌍극자를 갖는 분자 물질로부터 제조된 트랜지스터및 센서 | |
Zhou et al. | A field effect transistor based on the Mott transition in a molecular layer | |
US5119329A (en) | Memory cell based on ferro-electric non volatile variable resistive element | |
KR960006015A (ko) | 반도체장치 및 그 제조방법 | |
KR970018601A (ko) | 전자 또는 홀을 저장하는 메모리 셸과 메모리 및 메모리 장치 형성방법 | |
KR900702614A (ko) | Ptc회로 보호 소자의 어셈블리 | |
WO2002103436A3 (en) | Thin planar switches and their applications | |
KR20030092132A (ko) | 복합 분자 물질을 이용한 부동 게이트 메모리 디바이스 | |
KR830008401A (ko) | 절연 게이트형 트랜지스터 | |
Sato et al. | Polarized memory effect in the device including the organic charge‐transfer complex, copper‐tetracyanoquinodimethane | |
US3748501A (en) | Multi-terminal amorphous electronic control device | |
US2918628A (en) | Semiconductor amplifier | |
KR970076815A (ko) | 단일 전자 메모리 셀 장치 | |
Murayama et al. | Static negative resistance in highly doped Gunn diodes and application to switching and amplification | |
JP3030285B2 (ja) | ナノスケールのモット転移分子電界効果トランジスタ | |
KR960043306A (ko) | 비선형 소자 및 쌍안정 메모리 장치 | |
KR100540698B1 (ko) | 개선된 절연막 구조를 갖는 유기물 트랜지스터 | |
US3597625A (en) | Neuristor element employing bulk effect semiconductor devices | |
US3418619A (en) | Saturable solid state nonrectifying switching device | |
US3395446A (en) | Voltage controlled switch |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |