KR940027182A - 반도체장치 및 그 제조방법 - Google Patents
반도체장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR940027182A KR940027182A KR1019940011758A KR19940011758A KR940027182A KR 940027182 A KR940027182 A KR 940027182A KR 1019940011758 A KR1019940011758 A KR 1019940011758A KR 19940011758 A KR19940011758 A KR 19940011758A KR 940027182 A KR940027182 A KR 940027182A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- thin film
- silicon film
- metal element
- crystalline silicon
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 5
- 238000004519 manufacturing process Methods 0.000 title claims 3
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 7
- 230000002093 peripheral effect Effects 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims abstract 17
- 239000010409 thin film Substances 0.000 claims abstract 15
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract 8
- 239000013078 crystal Substances 0.000 claims abstract 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract 6
- 238000002425 crystallisation Methods 0.000 claims abstract 5
- 230000008025 crystallization Effects 0.000 claims abstract 5
- 239000011159 matrix material Substances 0.000 claims abstract 5
- 229910052759 nickel Inorganic materials 0.000 claims abstract 3
- 238000000034 method Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims 18
- 229910052751 metal Inorganic materials 0.000 claims 13
- 239000002184 metal Substances 0.000 claims 12
- 238000010438 heat treatment Methods 0.000 claims 7
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 238000004528 spin coating Methods 0.000 claims 2
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02669—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation inhibiting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1229—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different crystal properties within a device or between different devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
니켈이 비정질 실리콘막 위의 주변회로 섹션과 화소 섹션에 이들을 결정화시키기 위하여 도입된다. 게이트 전극 및 다른 것을 형성한 후, 소스, 드레인 및 채널이 불순물 도핑에 의해 형성되고, 레이저가 결정화를 개선시키기 위하여 조사된다. 그후, 전극/배선이 형성된다. 이에 의해,주변회로 섹션안의 박막 트랜지스터가 캐리어의 흐름 방향에 평행한 방향으로 결정성장된 결정성 실리콘으로 구성되고, 화소 전극 섹션안의 TFTs가 캐리어의 흐름에 수직인 방향으로 결정성 실리콘 막으로 구성된 활성 매트릭스타입 액정 디스플레이가 얻어질 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1 도는 본 발명의 실시예에 따라 액정 디스플레이의 개략적 구조를 보여주는 도면이다. 2A 내지 2D도는 본 발명의 실시예에 따라 액정 디스플레이의 주변 회로섹션을 포함하는 NTFT 및 PTFT가 상보적으로 형성된 회로를 제공하는 공정을 보여주는 도면이다. 제3도는 상기로부터 보여진 제2D도에서 보여진 배열을 보여주는 도면이다.
Claims (13)
- 기판 및 기판상에 형성된 박막 트랜지스터를 포함하고, 다수의 박막 트랜지스터의 일부분이 기판의 표면에 대략 평행하게 결정 성장된 결정성 실리콘 막을 가지며 다수 박막 트랜지스터의 나머지 부분이 기판의 표면에 수직으로 결정 성장된 결정성 실리콘 막을 갖는 반도체장치.
- 기판 및 기판상에 형성된 다수의 박막 트랜지스터로 포함되고, 다수의 박막 트랜지스터의 일부분이 활성 매트릭스타입 액정 디스플레이의 주변 회로 섹션으로서 제공되고, 박막 트랜지스터의 나머지 부분이 활성 캐트릭스타입 액정 디스플레이의 화소 섹션으로서 제공되며, 주변 회로 섹션으로서 제공되는 박막 트랜지스터가 기판의 표면에 평행한 방향에서 결정 성장된 결정성 실리콘 막을 갖고, 화소 섹션으로서 제공된 박막 트랜지스터가 기판의 표면에 평행한 방향으로 결정 성장된 결정성 실리콘 막을 갖는 반도체장치.
- 기판상에 실질적인 비정질 실리콘 막을 형성하는 단계 ; 비정질 실리콘 막의 형성전 또는 형성후에 한 영역에 결정화를 촉진하는 금속원소를 선택적으로 도입하는 단계 ; 및 비정질 실리콘 막을 가열에 의해 결정화시키는 단계를 포함하고, 결정 성장이 상기 영역으로부터 기판의 표면에 대략 평행한 방향으로 수행되고, 결정 성장이 어떤 금속원소도 선택적으로 도입되지 않은 나머지 영역으로부터 기판의 표면에 대략 평행한 방향으로 수행되는 반도체장치 제조방법.
- 기판상에 실질적 비정질 실리콘 막을 형성하는 단계: 비정질 실리콘 막의 형성전 또는 형성후 결정화를 촉진시키는 금속원소를 선택적으로 도입하는 단계 ; 및 금속원소가 선택적으로 도입된 영역으로부터 기판의 표면에 대략 수직인 방향으로 가열에 의해 비정질 실리콘막을 결정화 및 성장시키는 단계 ; 및 어떤 금속원소도 선택적으로 도입되지 않는 다른 영역으로부터 가열에 의해 기판의 표면에 대해 대략 평행한 방향으로 비정질 실리콘 막을 결정화 및 성장시키는 단계를 포함하고, 박막 트랜지스터는 결정성 실리콘 막의 결정 성장의 방향과 같이 박막 트랜지스터안의 캐리어 이동 방향에 대략 수직으로 일치하는 영역에서 형성되고, 다른 박막 트랜지스터는 결정성 실리콘 막의 결정 성장 방향과 같이 나머지 박막 트랜지스터안의 캐리어 이동 방향에 평행하게 나머지 영역에 형성되는 활성 매트릭스타입 액정 디스플레이용으로 사용되는 반도체장치 제조방법.
- 제3 항에 있어서, 금속원소가 니켈을 갖는 방법.
- 제4 항에 있어서, 금속원소가 니켈을 갖는 방법.
- 제3 항에 있어서, 가열 온도범위가 450°내지 550℃인 방법.
- 제4 항에 있어서, 가열 온도범위가 450°내지 550℃인 방법.
- 제3 항에 있어서, 레이저 또는 동등한 강광(strong light)이 가열에 의해 결정화한 후 금속원소가 도입된 영역 및 그 주위에 선택적으로 조사되는 방법.
- 제4 항에 있어서, 레이저 또는 동등한 강광이 가열에 의해 결정화한 후 금속원소가 도입된 영역 및 그 주위에 선택적으로 조사되는 방법.
- 제3 항에 있어서, 금속원소가 금속원소를 함유하는 물질을 적용 또는 스핀 코팅에 의해 도입되는 방법.
- 제4 항에 있어서, 금속원소가 금속원소를 함유하는 물질을 적용 또는 스핀 코팅에 의해 도입되는 방법.
- 다수의 화소 전극을 갖는 화소 섹션 ; 및 각 화소 전극을 구동하기 위한 구동회로수단을 포함하고, 화소 전극 섹션 및 구동회로수단이 각각 기판을 갖는 박막 트랜지스터들로 구성되고, 화소 섹션을 구성하는 박막 트랜지스터들은 기판의 표면에 대략 수직으로 결정 성장된 결정성 실리콘 막을 갖고 구동회로수단을 구성하는 박막 트랜지스터들은 기판의 표면에 대략 평행하게 결정 성장된 결정성 실리콘 막을 갖는 활성 매트릭스타입 액정 디스플레이.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14700493 | 1993-05-26 | ||
JP93-147004 | 1993-05-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940027182A true KR940027182A (ko) | 1994-12-10 |
KR0183063B1 KR0183063B1 (ko) | 1999-03-20 |
Family
ID=15420391
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940011758A KR0183063B1 (ko) | 1993-05-26 | 1994-05-26 | 반도체장치 및 그 제조방법 |
Country Status (2)
Country | Link |
---|---|
US (2) | US5481121A (ko) |
KR (1) | KR0183063B1 (ko) |
Families Citing this family (161)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5849601A (en) | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
KR950013784B1 (ko) | 1990-11-20 | 1995-11-16 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터 |
US7576360B2 (en) * | 1990-12-25 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device which comprises thin film transistors and method for manufacturing the same |
US6709907B1 (en) * | 1992-02-25 | 2004-03-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a thin film transistor |
CN100483651C (zh) | 1992-08-27 | 2009-04-29 | 株式会社半导体能源研究所 | 半导体器件的制造方法 |
US5403762A (en) * | 1993-06-30 | 1995-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a TFT |
TW226478B (en) * | 1992-12-04 | 1994-07-11 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for manufacturing the same |
US6323071B1 (en) | 1992-12-04 | 2001-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a semiconductor device |
JP3562588B2 (ja) | 1993-02-15 | 2004-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
US6997985B1 (en) | 1993-02-15 | 2006-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
EP1119053B1 (en) * | 1993-02-15 | 2011-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating TFT semiconductor device |
TW241377B (ko) | 1993-03-12 | 1995-02-21 | Semiconductor Energy Res Co Ltd | |
US6413805B1 (en) | 1993-03-12 | 2002-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device forming method |
JP3535205B2 (ja) * | 1993-03-22 | 2004-06-07 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
US6090646A (en) * | 1993-05-26 | 2000-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
KR100355938B1 (ko) * | 1993-05-26 | 2002-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치제작방법 |
KR100186886B1 (ko) * | 1993-05-26 | 1999-04-15 | 야마자끼 승페이 | 반도체장치 제작방법 |
US5818076A (en) * | 1993-05-26 | 1998-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
JP3450376B2 (ja) | 1993-06-12 | 2003-09-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPH06349735A (ja) * | 1993-06-12 | 1994-12-22 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US5663077A (en) * | 1993-07-27 | 1997-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films |
US5492843A (en) * | 1993-07-31 | 1996-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device and method of processing substrate |
JP2975973B2 (ja) * | 1993-08-10 | 1999-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JP2814049B2 (ja) | 1993-08-27 | 1998-10-22 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
TW264575B (ko) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
US5923962A (en) * | 1993-10-29 | 1999-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
US6798023B1 (en) | 1993-12-02 | 2004-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film |
CN100472752C (zh) | 1993-12-02 | 2009-03-25 | 株式会社半导体能源研究所 | 半导体器件的制造方法 |
US7081938B1 (en) | 1993-12-03 | 2006-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
TW272319B (ko) * | 1993-12-20 | 1996-03-11 | Sharp Kk | |
KR100319332B1 (ko) * | 1993-12-22 | 2002-04-22 | 야마자끼 순페이 | 반도체장치및전자광학장치 |
JP3221473B2 (ja) | 1994-02-03 | 2001-10-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6884698B1 (en) * | 1994-02-23 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with crystallization of amorphous silicon |
US6162667A (en) * | 1994-03-28 | 2000-12-19 | Sharp Kabushiki Kaisha | Method for fabricating thin film transistors |
KR100279217B1 (ko) * | 1994-04-13 | 2001-02-01 | 야마자끼 순페이 | 반도체 장치 형성 방법, 결정성 반도체 막 형성 방법, 박막 트랜지스터 형성 방법 및 반도체 장치 제조 방법 |
US6974763B1 (en) | 1994-04-13 | 2005-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming semiconductor device by crystallizing amorphous silicon and forming crystallization promoting material in the same chamber |
JP3192546B2 (ja) * | 1994-04-15 | 2001-07-30 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP3067949B2 (ja) * | 1994-06-15 | 2000-07-24 | シャープ株式会社 | 電子装置および液晶表示装置 |
TW273639B (en) * | 1994-07-01 | 1996-04-01 | Handotai Energy Kenkyusho Kk | Method for producing semiconductor device |
US5898188A (en) * | 1994-07-06 | 1999-04-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for its fabrication |
US5796116A (en) | 1994-07-27 | 1998-08-18 | Sharp Kabushiki Kaisha | Thin-film semiconductor device including a semiconductor film with high field-effect mobility |
JPH0869967A (ja) * | 1994-08-26 | 1996-03-12 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
TW403993B (en) * | 1994-08-29 | 2000-09-01 | Semiconductor Energy Lab | Semiconductor circuit for electro-optical device and method of manufacturing the same |
JP3442500B2 (ja) * | 1994-08-31 | 2003-09-02 | 株式会社半導体エネルギー研究所 | 半導体回路の作製方法 |
US5789762A (en) * | 1994-09-14 | 1998-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor active matrix circuit |
TW374247B (en) * | 1994-09-15 | 1999-11-11 | Semiconductor Energy Lab Co Ltd | Method of fabricating semiconductor device |
US5818068A (en) * | 1994-09-22 | 1998-10-06 | Sharp Kabushiki Kaisha | Thin film transistor circuit and an active matrix type display device |
US5915174A (en) * | 1994-09-30 | 1999-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for producing the same |
US6300659B1 (en) | 1994-09-30 | 2001-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Thin-film transistor and fabrication method for same |
US5942768A (en) | 1994-10-07 | 1999-08-24 | Semionductor Energy Laboratory Co., Ltd. | Semiconductor device having improved crystal orientation |
JP3486240B2 (ja) * | 1994-10-20 | 2004-01-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US6337229B1 (en) | 1994-12-16 | 2002-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of making crystal silicon semiconductor and thin film transistor |
JP4130237B2 (ja) * | 1995-01-28 | 2008-08-06 | 株式会社半導体エネルギー研究所 | 結晶性珪素膜の作製方法及び半導体装置の作製方法 |
KR100265179B1 (ko) * | 1995-03-27 | 2000-09-15 | 야마자끼 순페이 | 반도체장치와 그의 제작방법 |
US6902616B1 (en) * | 1995-07-19 | 2005-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Method and apparatus for producing semiconductor device |
JP4056571B2 (ja) | 1995-08-02 | 2008-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3295679B2 (ja) * | 1995-08-04 | 2002-06-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3907726B2 (ja) | 1995-12-09 | 2007-04-18 | 株式会社半導体エネルギー研究所 | 微結晶シリコン膜の作製方法、半導体装置の作製方法及び光電変換装置の作製方法 |
JP3124480B2 (ja) | 1995-12-12 | 2001-01-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6204101B1 (en) | 1995-12-15 | 2001-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
TW319912B (ko) * | 1995-12-15 | 1997-11-11 | Handotai Energy Kenkyusho Kk | |
US6478263B1 (en) * | 1997-01-17 | 2002-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
JP3729955B2 (ja) | 1996-01-19 | 2005-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3645378B2 (ja) | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3645379B2 (ja) * | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3645380B2 (ja) * | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置 |
US5985740A (en) | 1996-01-19 | 1999-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device including reduction of a catalyst |
US5888858A (en) * | 1996-01-20 | 1999-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US6180439B1 (en) | 1996-01-26 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device |
US7056381B1 (en) | 1996-01-26 | 2006-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication method of semiconductor device |
US6465287B1 (en) | 1996-01-27 | 2002-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization |
US6063654A (en) * | 1996-02-20 | 2000-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor involving laser treatment |
TW374196B (en) | 1996-02-23 | 1999-11-11 | Semiconductor Energy Lab Co Ltd | Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same |
TW335503B (en) | 1996-02-23 | 1998-07-01 | Semiconductor Energy Lab Kk | Semiconductor thin film and manufacturing method and semiconductor device and its manufacturing method |
TW317643B (ko) | 1996-02-23 | 1997-10-11 | Handotai Energy Kenkyusho Kk | |
JP3472024B2 (ja) | 1996-02-26 | 2003-12-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6100562A (en) * | 1996-03-17 | 2000-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
WO1997037768A1 (en) * | 1996-04-10 | 1997-10-16 | The Penn State Research Foundation | MODIFYING SOLID CRYSTALLIZATION KINETICS FOR A-Si FILMS |
US6133119A (en) * | 1996-07-08 | 2000-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method manufacturing same |
US5773329A (en) * | 1996-07-24 | 1998-06-30 | International Business Machines Corporation | Polysilicon grown by pulsed rapid thermal annealing |
KR100500033B1 (ko) * | 1996-10-15 | 2005-09-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
JP3525316B2 (ja) * | 1996-11-12 | 2004-05-10 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置 |
JPH10163501A (ja) * | 1996-11-29 | 1998-06-19 | Semiconductor Energy Lab Co Ltd | 絶縁ゲイト型トランジスタ |
JP3630894B2 (ja) * | 1996-12-24 | 2005-03-23 | 株式会社半導体エネルギー研究所 | 電荷転送半導体装置およびその作製方法並びにイメージセンサ |
JPH10199807A (ja) * | 1996-12-27 | 1998-07-31 | Semiconductor Energy Lab Co Ltd | 結晶性珪素膜の作製方法 |
TW386238B (en) | 1997-01-20 | 2000-04-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
US6387803B2 (en) * | 1997-01-29 | 2002-05-14 | Ultratech Stepper, Inc. | Method for forming a silicide region on a silicon body |
JP4242461B2 (ja) | 1997-02-24 | 2009-03-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3544280B2 (ja) | 1997-03-27 | 2004-07-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPH10282414A (ja) * | 1997-04-09 | 1998-10-23 | Canon Inc | ズームレンズ |
JP3376247B2 (ja) * | 1997-05-30 | 2003-02-10 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ及び薄膜トランジスタを用いた半導体装置 |
US6541793B2 (en) | 1997-05-30 | 2003-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin-film transistor and semiconductor device using thin-film transistors |
US6307214B1 (en) * | 1997-06-06 | 2001-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor thin film and semiconductor device |
JP3844561B2 (ja) | 1997-06-10 | 2006-11-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6501094B1 (en) | 1997-06-11 | 2002-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a bottom gate type thin film transistor |
JP3717634B2 (ja) | 1997-06-17 | 2005-11-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6066547A (en) * | 1997-06-20 | 2000-05-23 | Sharp Laboratories Of America, Inc. | Thin-film transistor polycrystalline film formation by nickel induced, rapid thermal annealing method |
JP3830623B2 (ja) * | 1997-07-14 | 2006-10-04 | 株式会社半導体エネルギー研究所 | 結晶性半導体膜の作製方法 |
JP3295346B2 (ja) | 1997-07-14 | 2002-06-24 | 株式会社半導体エネルギー研究所 | 結晶性珪素膜の作製方法及びそれを用いた薄膜トランジスタ |
US6326226B1 (en) | 1997-07-15 | 2001-12-04 | Lg. Philips Lcd Co., Ltd. | Method of crystallizing an amorphous film |
JP3939399B2 (ja) * | 1997-07-22 | 2007-07-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPH1140498A (ja) | 1997-07-22 | 1999-02-12 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP4318768B2 (ja) * | 1997-07-23 | 2009-08-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4180689B2 (ja) * | 1997-07-24 | 2008-11-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4112655B2 (ja) * | 1997-09-25 | 2008-07-02 | 東芝松下ディスプレイテクノロジー株式会社 | 多結晶薄膜の製造方法 |
TW408351B (en) * | 1997-10-17 | 2000-10-11 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
JP4236722B2 (ja) * | 1998-02-05 | 2009-03-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR100340124B1 (ko) | 1998-02-10 | 2003-01-29 | 주승기 | 박막트랜지스터 제조방법 |
US6312979B1 (en) | 1998-04-28 | 2001-11-06 | Lg.Philips Lcd Co., Ltd. | Method of crystallizing an amorphous silicon layer |
US6396147B1 (en) | 1998-05-16 | 2002-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with metal-oxide conductors |
US6524662B2 (en) | 1998-07-10 | 2003-02-25 | Jin Jang | Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof |
US7153729B1 (en) | 1998-07-15 | 2006-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
US7294535B1 (en) | 1998-07-15 | 2007-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
US7282398B2 (en) * | 1998-07-17 | 2007-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same |
US7084016B1 (en) | 1998-07-17 | 2006-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
JP2000058839A (ja) | 1998-08-05 | 2000-02-25 | Semiconductor Energy Lab Co Ltd | 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法 |
US6559036B1 (en) | 1998-08-07 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
US6784034B1 (en) | 1998-10-13 | 2004-08-31 | Lg. Philips Lcd Co., Ltd. | Method for fabricating a thin film transistor |
US6558986B1 (en) | 1998-09-03 | 2003-05-06 | Lg.Philips Lcd Co., Ltd | Method of crystallizing amorphous silicon thin film and method of fabricating polysilicon thin film transistor using the crystallization method |
JP2000174282A (ja) * | 1998-12-03 | 2000-06-23 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP3483484B2 (ja) * | 1998-12-28 | 2004-01-06 | 富士通ディスプレイテクノロジーズ株式会社 | 半導体装置、画像表示装置、半導体装置の製造方法、及び画像表示装置の製造方法 |
US6475836B1 (en) * | 1999-03-29 | 2002-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP4298131B2 (ja) | 1999-05-14 | 2009-07-15 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
US6680487B1 (en) | 1999-05-14 | 2004-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same |
KR100317641B1 (ko) | 1999-05-21 | 2001-12-22 | 구본준, 론 위라하디락사 | 박막 트랜지스터 및 그 제조방법 |
US7245018B1 (en) * | 1999-06-22 | 2007-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof |
TW459275B (en) | 1999-07-06 | 2001-10-11 | Semiconductor Energy Lab | Semiconductor device and method of fabricating the same |
US6885366B1 (en) | 1999-09-30 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US7071041B2 (en) * | 2000-01-20 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US6746942B2 (en) * | 2000-09-05 | 2004-06-08 | Sony Corporation | Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device |
US7045444B2 (en) * | 2000-12-19 | 2006-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device that includes selectively adding a noble gas element |
US6858480B2 (en) | 2001-01-18 | 2005-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
TWI221645B (en) * | 2001-01-19 | 2004-10-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
US7115453B2 (en) * | 2001-01-29 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
US6770518B2 (en) * | 2001-01-29 | 2004-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
JP2002231627A (ja) * | 2001-01-30 | 2002-08-16 | Semiconductor Energy Lab Co Ltd | 光電変換装置の作製方法 |
US7141822B2 (en) * | 2001-02-09 | 2006-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP5088993B2 (ja) * | 2001-02-16 | 2012-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4993810B2 (ja) | 2001-02-16 | 2012-08-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
SG114529A1 (en) * | 2001-02-23 | 2005-09-28 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
SG160191A1 (en) * | 2001-02-28 | 2010-04-29 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
SG143975A1 (en) * | 2001-02-28 | 2008-07-29 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
US6830994B2 (en) * | 2001-03-09 | 2004-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a crystallized semiconductor film |
JP2002270507A (ja) * | 2001-03-14 | 2002-09-20 | Hitachi Cable Ltd | 結晶シリコン層の形成方法および結晶シリコン半導体装置 |
JP4718700B2 (ja) | 2001-03-16 | 2011-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7052943B2 (en) | 2001-03-16 | 2006-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US6812081B2 (en) * | 2001-03-26 | 2004-11-02 | Semiconductor Energy Laboratory Co.,.Ltd. | Method of manufacturing semiconductor device |
JP2003163221A (ja) * | 2001-11-28 | 2003-06-06 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US7232714B2 (en) * | 2001-11-30 | 2007-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR100885013B1 (ko) | 2002-01-03 | 2009-02-20 | 삼성전자주식회사 | 박막 트랜지스터 및 액정 표시 장치 |
US6750515B2 (en) * | 2002-02-05 | 2004-06-15 | Industrial Technology Research Institute | SCR devices in silicon-on-insulator CMOS process for on-chip ESD protection |
US7374976B2 (en) * | 2002-11-22 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating thin film transistor |
JP4115283B2 (ja) * | 2003-01-07 | 2008-07-09 | シャープ株式会社 | 半導体装置およびその製造方法 |
US7348222B2 (en) * | 2003-06-30 | 2008-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device |
US7244992B2 (en) | 2003-07-17 | 2007-07-17 | Ming-Dou Ker | Turn-on-efficient bipolar structures with deep N-well for on-chip ESD protection |
US7247527B2 (en) * | 2003-07-31 | 2007-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device, and laser irradiation apparatus |
US7358165B2 (en) * | 2003-07-31 | 2008-04-15 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method for manufacturing semiconductor device |
US7964925B2 (en) * | 2006-10-13 | 2011-06-21 | Hewlett-Packard Development Company, L.P. | Photodiode module and apparatus including multiple photodiode modules |
US7459379B2 (en) * | 2004-03-26 | 2008-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP4019377B2 (ja) * | 2004-04-01 | 2007-12-12 | セイコーエプソン株式会社 | 半導体装置の製造方法および半導体装置 |
JP5567589B2 (ja) | 2009-11-19 | 2014-08-06 | シャープ株式会社 | 半導体装置の製造方法、半導体装置、及び表示装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1149589A (en) * | 1966-11-15 | 1969-04-23 | Matsushita Electric Ind Co Ltd | Thin film active element |
US4525223A (en) * | 1978-09-19 | 1985-06-25 | Noboru Tsuya | Method of manufacturing a thin ribbon wafer of semiconductor material |
US4309224A (en) * | 1978-10-06 | 1982-01-05 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device |
US4406709A (en) * | 1981-06-24 | 1983-09-27 | Bell Telephone Laboratories, Incorporated | Method of increasing the grain size of polycrystalline materials by directed energy-beams |
US4466179A (en) * | 1982-10-19 | 1984-08-21 | Harris Corporation | Method for providing polysilicon thin films of improved uniformity |
JPS6184074A (ja) * | 1984-10-01 | 1986-04-28 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US4772564A (en) * | 1985-10-30 | 1988-09-20 | Astrosystems, Inc. | Fault tolerant thin-film photovoltaic cell fabrication process |
US5170244A (en) * | 1986-03-06 | 1992-12-08 | Kabushiki Kaisha Toshiba | Electrode interconnection material, semiconductor device using this material and driving circuit substrate for display device |
JPS63170971A (ja) * | 1987-01-09 | 1988-07-14 | Nec Corp | 半導体装置 |
JP2560716B2 (ja) * | 1987-03-25 | 1996-12-04 | 株式会社日本自動車部品総合研究所 | 半導体素子及びその製造方法 |
JPH0388321A (ja) * | 1989-08-31 | 1991-04-12 | Tonen Corp | 多結晶シリコン薄膜 |
US5278093A (en) * | 1989-09-23 | 1994-01-11 | Canon Kabushiki Kaisha | Method for forming semiconductor thin film |
US5318919A (en) * | 1990-07-31 | 1994-06-07 | Sanyo Electric Co., Ltd. | Manufacturing method of thin film transistor |
US5147826A (en) * | 1990-08-06 | 1992-09-15 | The Pennsylvania Research Corporation | Low temperature crystallization and pattering of amorphous silicon films |
JP3103385B2 (ja) * | 1991-01-25 | 2000-10-30 | 株式会社東芝 | ポリシリコン薄膜半導体装置 |
JPH0824104B2 (ja) * | 1991-03-18 | 1996-03-06 | 株式会社半導体エネルギー研究所 | 半導体材料およびその作製方法 |
JPH05182923A (ja) * | 1991-05-28 | 1993-07-23 | Semiconductor Energy Lab Co Ltd | レーザーアニール方法 |
US5424244A (en) * | 1992-03-26 | 1995-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
TW226478B (en) * | 1992-12-04 | 1994-07-11 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for manufacturing the same |
US5275851A (en) * | 1993-03-03 | 1994-01-04 | The Penn State Research Foundation | Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates |
-
1994
- 1994-05-25 US US08/248,682 patent/US5481121A/en not_active Expired - Lifetime
- 1994-05-26 KR KR1019940011758A patent/KR0183063B1/ko not_active IP Right Cessation
-
1995
- 1995-06-05 US US08/462,748 patent/US5824573A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5824573A (en) | 1998-10-20 |
US5481121A (en) | 1996-01-02 |
KR0183063B1 (ko) | 1999-03-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR940027182A (ko) | 반도체장치 및 그 제조방법 | |
KR950007158A (ko) | 반도체 장치 및 그 제조방법 | |
US7781765B2 (en) | Mask for crystallizing polysilicon and a method for forming thin film transistor using the mask | |
KR100296110B1 (ko) | 박막트랜지스터 제조방법 | |
US7157737B2 (en) | Structures with seeded single-crystal domains | |
US8183122B2 (en) | Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film | |
KR960001849A (ko) | 반도체 장치, 그의 제조 방법, 및 그를 포함하는 액정 표시 장치 | |
MY109592A (en) | Method and apparatus for manufacturing a liquid crystal display substrate, and apparatus and method for evaluating semiconductor crystals. | |
KR950007160A (ko) | 반도체 장치 및 그 제조 방법 | |
KR960026980A (ko) | 반도체 장치 및 그 제조 방법 | |
US20080149029A1 (en) | Apparatus and method of crystallizing amorphous silicon | |
KR20060086816A (ko) | 반도체막의 레이저 어닐 방법 | |
JP2000111943A5 (ko) | ||
KR970016722A (ko) | 반도체장치 및 이것을 사용한 액정표시장치 | |
KR940027187A (ko) | 반도체 장치 및 그 제조방법 | |
KR100269312B1 (ko) | 실리콘막의결정화방법및이를이용한박막트랜지스터-액정표시장치(tft-lcd)의제조방법 | |
US7541615B2 (en) | Display device including thin film transistors | |
US7879511B2 (en) | Sequential lateral solidification mask | |
TW575866B (en) | Display device with active-matrix transistor and method for manufacturing the same | |
US11521989B2 (en) | Display substrate, display apparatus and manufacturing method of display substrate | |
KR100552958B1 (ko) | 다결정 실리콘 박막 트랜지스터를 포함하는 평판 표시소자 및 그의 제조 방법 | |
CN100444321C (zh) | 半导体薄膜的制造方法及图像显示装置 | |
JPH0142146B2 (ko) | ||
JP3244518B2 (ja) | アクティブマトリクス基板の製造方法 | |
KR100675936B1 (ko) | 단결정실리콘막 형성방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20111118 Year of fee payment: 14 |
|
LAPS | Lapse due to unpaid annual fee |