KR940027182A - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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KR940027182A
KR940027182A KR1019940011758A KR19940011758A KR940027182A KR 940027182 A KR940027182 A KR 940027182A KR 1019940011758 A KR1019940011758 A KR 1019940011758A KR 19940011758 A KR19940011758 A KR 19940011758A KR 940027182 A KR940027182 A KR 940027182A
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substrate
thin film
silicon film
metal element
crystalline silicon
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KR0183063B1 (ko
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장홍용
도루 다카야마
야스히코 다케무라
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야마자끼 순페이
가부시키가이샤 한도오따이 에네루기 겐큐쇼
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Abstract

니켈이 비정질 실리콘막 위의 주변회로 섹션과 화소 섹션에 이들을 결정화시키기 위하여 도입된다. 게이트 전극 및 다른 것을 형성한 후, 소스, 드레인 및 채널이 불순물 도핑에 의해 형성되고, 레이저가 결정화를 개선시키기 위하여 조사된다. 그후, 전극/배선이 형성된다. 이에 의해,주변회로 섹션안의 박막 트랜지스터가 캐리어의 흐름 방향에 평행한 방향으로 결정성장된 결정성 실리콘으로 구성되고, 화소 전극 섹션안의 TFTs가 캐리어의 흐름에 수직인 방향으로 결정성 실리콘 막으로 구성된 활성 매트릭스타입 액정 디스플레이가 얻어질 수 있다.

Description

반도체장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1 도는 본 발명의 실시예에 따라 액정 디스플레이의 개략적 구조를 보여주는 도면이다. 2A 내지 2D도는 본 발명의 실시예에 따라 액정 디스플레이의 주변 회로섹션을 포함하는 NTFT 및 PTFT가 상보적으로 형성된 회로를 제공하는 공정을 보여주는 도면이다. 제3도는 상기로부터 보여진 제2D도에서 보여진 배열을 보여주는 도면이다.

Claims (13)

  1. 기판 및 기판상에 형성된 박막 트랜지스터를 포함하고, 다수의 박막 트랜지스터의 일부분이 기판의 표면에 대략 평행하게 결정 성장된 결정성 실리콘 막을 가지며 다수 박막 트랜지스터의 나머지 부분이 기판의 표면에 수직으로 결정 성장된 결정성 실리콘 막을 갖는 반도체장치.
  2. 기판 및 기판상에 형성된 다수의 박막 트랜지스터로 포함되고, 다수의 박막 트랜지스터의 일부분이 활성 매트릭스타입 액정 디스플레이의 주변 회로 섹션으로서 제공되고, 박막 트랜지스터의 나머지 부분이 활성 캐트릭스타입 액정 디스플레이의 화소 섹션으로서 제공되며, 주변 회로 섹션으로서 제공되는 박막 트랜지스터가 기판의 표면에 평행한 방향에서 결정 성장된 결정성 실리콘 막을 갖고, 화소 섹션으로서 제공된 박막 트랜지스터가 기판의 표면에 평행한 방향으로 결정 성장된 결정성 실리콘 막을 갖는 반도체장치.
  3. 기판상에 실질적인 비정질 실리콘 막을 형성하는 단계 ; 비정질 실리콘 막의 형성전 또는 형성후에 한 영역에 결정화를 촉진하는 금속원소를 선택적으로 도입하는 단계 ; 및 비정질 실리콘 막을 가열에 의해 결정화시키는 단계를 포함하고, 결정 성장이 상기 영역으로부터 기판의 표면에 대략 평행한 방향으로 수행되고, 결정 성장이 어떤 금속원소도 선택적으로 도입되지 않은 나머지 영역으로부터 기판의 표면에 대략 평행한 방향으로 수행되는 반도체장치 제조방법.
  4. 기판상에 실질적 비정질 실리콘 막을 형성하는 단계: 비정질 실리콘 막의 형성전 또는 형성후 결정화를 촉진시키는 금속원소를 선택적으로 도입하는 단계 ; 및 금속원소가 선택적으로 도입된 영역으로부터 기판의 표면에 대략 수직인 방향으로 가열에 의해 비정질 실리콘막을 결정화 및 성장시키는 단계 ; 및 어떤 금속원소도 선택적으로 도입되지 않는 다른 영역으로부터 가열에 의해 기판의 표면에 대해 대략 평행한 방향으로 비정질 실리콘 막을 결정화 및 성장시키는 단계를 포함하고, 박막 트랜지스터는 결정성 실리콘 막의 결정 성장의 방향과 같이 박막 트랜지스터안의 캐리어 이동 방향에 대략 수직으로 일치하는 영역에서 형성되고, 다른 박막 트랜지스터는 결정성 실리콘 막의 결정 성장 방향과 같이 나머지 박막 트랜지스터안의 캐리어 이동 방향에 평행하게 나머지 영역에 형성되는 활성 매트릭스타입 액정 디스플레이용으로 사용되는 반도체장치 제조방법.
  5. 제3 항에 있어서, 금속원소가 니켈을 갖는 방법.
  6. 제4 항에 있어서, 금속원소가 니켈을 갖는 방법.
  7. 제3 항에 있어서, 가열 온도범위가 450°내지 550℃인 방법.
  8. 제4 항에 있어서, 가열 온도범위가 450°내지 550℃인 방법.
  9. 제3 항에 있어서, 레이저 또는 동등한 강광(strong light)이 가열에 의해 결정화한 후 금속원소가 도입된 영역 및 그 주위에 선택적으로 조사되는 방법.
  10. 제4 항에 있어서, 레이저 또는 동등한 강광이 가열에 의해 결정화한 후 금속원소가 도입된 영역 및 그 주위에 선택적으로 조사되는 방법.
  11. 제3 항에 있어서, 금속원소가 금속원소를 함유하는 물질을 적용 또는 스핀 코팅에 의해 도입되는 방법.
  12. 제4 항에 있어서, 금속원소가 금속원소를 함유하는 물질을 적용 또는 스핀 코팅에 의해 도입되는 방법.
  13. 다수의 화소 전극을 갖는 화소 섹션 ; 및 각 화소 전극을 구동하기 위한 구동회로수단을 포함하고, 화소 전극 섹션 및 구동회로수단이 각각 기판을 갖는 박막 트랜지스터들로 구성되고, 화소 섹션을 구성하는 박막 트랜지스터들은 기판의 표면에 대략 수직으로 결정 성장된 결정성 실리콘 막을 갖고 구동회로수단을 구성하는 박막 트랜지스터들은 기판의 표면에 대략 평행하게 결정 성장된 결정성 실리콘 막을 갖는 활성 매트릭스타입 액정 디스플레이.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940011758A 1993-05-26 1994-05-26 반도체장치 및 그 제조방법 KR0183063B1 (ko)

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