KR940008137A - 반도체 장치의 제조 방법 - Google Patents
반도체 장치의 제조 방법 Download PDFInfo
- Publication number
- KR940008137A KR940008137A KR1019930020541A KR930020541A KR940008137A KR 940008137 A KR940008137 A KR 940008137A KR 1019930020541 A KR1019930020541 A KR 1019930020541A KR 930020541 A KR930020541 A KR 930020541A KR 940008137 A KR940008137 A KR 940008137A
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- KR
- South Korea
- Prior art keywords
- diffusion layer
- type diffusion
- type
- contact hole
- layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 5
- 238000004519 manufacturing process Methods 0.000 title claims 3
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 6
- 239000011574 phosphorus Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 claims abstract 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910052796 boron Inorganic materials 0.000 claims abstract 4
- 239000007943 implant Substances 0.000 claims abstract 2
- 238000005468 ion implantation Methods 0.000 claims abstract 2
- 239000010410 layer Substances 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 6
- 239000012535 impurity Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 230000004888 barrier function Effects 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 239000011229 interlayer Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910011208 Ti—N Inorganic materials 0.000 abstract 1
- 238000001459 lithography Methods 0.000 abstract 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
본 발명은 적은 공정수와 적은 이온 주입 도스량으로 Ti-N을 갖는 배선과 N+,P+형 확산층과의 접촉을 형성하는 것을 목적으로 한다.
본 발명의 구성은 N+형 확산층(5)와 접촉 구멍 사이의 마진을 작게해도 누설 전류가 흐르지 않도록 인을 전면에 이온 주입해서 단1회의 리소그래피 공정을 이용해서 P+확산층(6)에의 인의 도스량 보다도 많은 도스량으로 붕소를 주입해서 P+확산층과 접촉 구멍 사이의 마진을 작게해도 누설 전류가 흐르지 않아서 낮은 접촉 저항을 실현한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시예를 설명하기 위해 (A)~(C)로 구분하여 도시하는 공정순 단면도.
제4도는 본 발명의 한 실시예에 있어서의 Al-Si-Cu막/Ti막-N막/Ti막-P+형 접촉층의 접촉 저항과 인 이온 도스량과의 관계를 도시하는 그래프.
Claims (4)
- 반도체 장치의 제조방법에 있어서, 반도체 기판의 표면에 P+형 확산층 및 N+형 확산층을 선택적으로 형성하는 공정, 상기 반도체 기판의 상기표면 상에 층 절연막을 퇴적하는 공정, 상기 P+형 확산층이 제1접촉 구멍을 통해 노출되고, N+형 확산층이 제2접촉 구멍을 통해 노출되도록 상기 층간 절연막을 통과하는 접촉 구멍을 형성하는 공정, 상기 제1 및 제2 접촉 구멍을 통해 상기 P+형 확산층 및 상기 N+형 확산층으로 N형 불순물을 주입하는 공정, 상기 제1접촉 구멍을 통해 상기 P+형 확산층에만 P형 불순물을 주입하는 공정, 및 상기 제1 및 제2접촉 구멍을 통해 각각의 상기 P+확산층 및 상기 N+형 확산층에 접촉하여 배리어 메탈막을 갖는 배선층을 형성하는 공정을 포함하는 것을 특징으로 하는 제조방법.
- 제1항에 있어서, 상기 반도체 기판이 실리콘 기판이고, P+형 확산층이 상기 실리콘 기판의 표면에 형성된 P형 웰의 표면에 형성되며, N+형 확산층이 상기 실리콘 기판의 표면에 형성된 N형 웰의 표면에 형성되고, 상기 N형 불순물이 인이고, 상기 P형 불순물이 붕소이며, 상기 배리어 메탈막이 티탄막 및 질화 티탄막으로 이루어진 2중층으로 형성되는 것을 특징으로 하는 제조방법.
- 제2항에 있어서, 상기 인이 상기 제1 및 제2접촉 구멍을 통해 상기 P+형 확산층 및 상기 N+형 확산층으로 이온 주입되고, 상기 붕소가 상기 제1접촉 구멍을 통해 상기 P+형 확산층에만 이온 주입되는 것을 특징으로 하는 제조방법.
- 제3항에 있어서, 상기 인이 2.0×1014㎝-2의 도스량으로 이온 주입되고, 상기 붕소가 2.0×1015㎝-2내지2.0×1014㎝-2범위의 도스량으로 이온 주입되는 것을 특징으로 하는 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP92-259196 | 1992-09-29 | ||
JP4259196A JPH06112149A (ja) | 1992-09-29 | 1992-09-29 | 半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR940008137A true KR940008137A (ko) | 1994-04-29 |
Family
ID=17330717
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930020541A KR940008137A (ko) | 1992-09-29 | 1993-09-28 | 반도체 장치의 제조 방법 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0590652A3 (ko) |
JP (1) | JPH06112149A (ko) |
KR (1) | KR940008137A (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW478011B (en) * | 1999-03-19 | 2002-03-01 | Toshiba Corp | Manufacture of semiconductor device |
US8148748B2 (en) | 2007-09-26 | 2012-04-03 | Stmicroelectronics N.V. | Adjustable field effect rectifier |
EP2232559B1 (en) | 2007-09-26 | 2019-05-15 | STMicroelectronics N.V. | Adjustable field effect rectifier |
EP2384518B1 (en) | 2009-01-06 | 2019-09-04 | STMicroelectronics N.V. | Self-bootstrapping field effect diode structures and methods |
DE102010004230A1 (de) | 2009-01-23 | 2010-10-14 | Qimonda Ag | Integrierter Schaltkreis mit Kontaktstrukturen für P- und N-Dotierte Gebiete und Verfahren zu dessen Herstellung |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6211259A (ja) * | 1985-07-09 | 1987-01-20 | Sony Corp | 半導体装置の製造方法 |
EP0216053A3 (en) * | 1985-09-26 | 1988-01-20 | Motorola, Inc. | Removable sidewall spaces for lightly doped drain formation using one mask level |
JPH069203B2 (ja) * | 1987-03-31 | 1994-02-02 | 株式会社東芝 | 半導体装置とその製造方法 |
IT1223571B (it) * | 1987-12-21 | 1990-09-19 | Sgs Thomson Microelectronics | Procedimento per la fabbricazione di dispositivi integrati cmos con lunghezze di porta ridotte |
IT1225614B (it) * | 1988-08-04 | 1990-11-22 | Sgs Thomson Microelectronics | Processo per la fabbricazione di dispositivi integrati cmos con lunghezze di gate ridotte e drain leggermente drogato |
US4956311A (en) * | 1989-06-27 | 1990-09-11 | National Semiconductor Corporation | Double-diffused drain CMOS process using a counterdoping technique |
-
1992
- 1992-09-29 JP JP4259196A patent/JPH06112149A/ja active Pending
-
1993
- 1993-09-28 KR KR1019930020541A patent/KR940008137A/ko not_active Application Discontinuation
- 1993-09-29 EP EP19930115754 patent/EP0590652A3/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
EP0590652A3 (en) | 1994-12-07 |
JPH06112149A (ja) | 1994-04-22 |
EP0590652A2 (en) | 1994-04-06 |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |