KR940007969A - 소형화(micro-miniature) 구조 제조방법 - Google Patents

소형화(micro-miniature) 구조 제조방법 Download PDF

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Publication number
KR940007969A
KR940007969A KR1019930016296A KR930016296A KR940007969A KR 940007969 A KR940007969 A KR 940007969A KR 1019930016296 A KR1019930016296 A KR 1019930016296A KR 930016296 A KR930016296 A KR 930016296A KR 940007969 A KR940007969 A KR 940007969A
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South Korea
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layer
photoresist
sacrificial
photoresist layer
depositing
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KR1019930016296A
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KR970008324B1 (ko
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판 롱-쉔
자패 한스 핼무트
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죤 디. 크레인
인터내셔널 비지네스 머신즈 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0075—Manufacture of substrate-free structures
    • B81C99/0085—Manufacture of substrate-free structures using moulds and master templates, e.g. for hot-embossing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/002—Electrostatic motors
    • H02N1/006—Electrostatic motors of the gap-closing type
    • H02N1/008—Laterally driven motors, e.g. of the comb-drive type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/035—Microgears
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/037—Microtransmissions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Weting (AREA)

Abstract

약 10에서 20㎛ 범위 두께를 갖는 프리 스탠딩(free standing) 소형화 구조(miniaturinzed structure) 제조에서, 희생 시스템에 기초를 둔 방법은 기판 물질의 선택, 기판 물질위에 희생물질 증착 및 형태를 정의하기 위한 희생층의 패턴닝 단계들을 포함한다. 포토레지스트 물질층은 희생층 위에 증착되며 대비-강화된 공학 리소그래피에 의해 패턴화되고 포토래지스트 몰드를 형성한다. 몰드위에는 금속물질층이 도금된다. 전기도금된 구조는 레지스트 프로파일에 일치하고, 통상적인 플리실리콘(polysilicon) 소형화 구조 두께의 몇배의 두께를 가질 수 있다. 포토레지스트 몰드와 희생층은 그후에 에칭액을 사용하여 에칭되어 9:1에서 10:1까지 또는 그 이상의 종횡비에서 약 10에서 20㎛ 범위의 두께를 갖는 프리 스탠딩 금속구조를 형성한다.

Description

소형화(micro-miniature) 구조 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따라 제조된 마이크로엑추에이터 구조의 평면도,
제2A-2M도는 제1도의 마이크로 엑추에이터 구조의 여러 제조단계를 예시하는 도면,
제3도는 제1도의 3-3라인을 따른 단면도.

Claims (10)

  1. 기판물질(a substrate material)을 선택하는 단계와, 상기 기판물질위에 희생물질층(a sacrificial layer of material)을 증착하는 단계와, 형태(a shape)를 정의(define)하기 위해 상기 희생층을 패터닝 하는(patterning) 단계와, 상기 희생층위에 포토레지스트 물질(a photoresist layer of material)을 증착(deposition)하는 단계와, 포토레지스트 몰드(a photoresist mold)를 형성하기 위해서 대비-강화된(contrast-enhanced) 광학 리소그래피(photolithography)에 의해 상기 포토레지스트층을 패터닝 하는 단계와, 상기 포토레지스트 몰드위에 금속물질층(a metallic layer of material)을 도금(plating)하는 단계와, 프리 스탠딩 금속구조(a free standing metallic structrue)를 형성하기 위해 에칭액(etchant)을 사용하여 상기 포토레지스트 몰드와 상기 희생층을 용해 (dissolving)하는 단계를 포함하는 소형화 구조(a miniaturinzed structure) 제조(fabrication)방법.
  2. 제1항에 있어서, 상기 희생층, 상기 금속층과 상기 에칭액은 높은 에칭 선택도(etching selectivity)를 제공하도록 선택되어 상기 금속층 보다 실질적으로 높은 비율에서 상기 희생층을 에칭시키는 소형화 구조 제조방법.
  3. 제1항에 있어서, 상기 희생층은 글래스 물질(a glass material)로 형성되고, 상기 금속층은 전이 원소(a transition element)로 형성되며, 상기 에칭액은 불화수소계 산물질(an HF-based acid material)로부터 형성되는 소형화 구조 제조방법.
  4. 제1항에 있어서, 상기 희생층이 포스포실리케이트 글래스(phosphosilicate glass)(PSG)이고, 상기 금속층이 구리 또는 크롬이며 상기 에칭액이 불화수소산(hydrofluoric acid:HF)인 소형화 구조 제조방법.
  5. 제1항에 있어서, 상기 포토레지스트층을 증착하는 단계는 상기 포토레지스트층 위에 대비 강화층(a contrast enchancement layer)을 증착하는 단계를 더 포함하는 소형화 구조 제조방법.
  6. 제1항에 있어서, 상기 포토레지스트층을 증착하는 단계는 상기 포토레지스트층 위에 장벽층(a barrier layer)과 상기 장벽층 위에 대비강화층을 증착하는 단계를 더 포함하는 소형화 구조 제조방법.
  7. 제4항에 있어서, 상기 대비 강화층은 표백성 염료(a breachable dye)를 가지는 복합물(a composition)로 부터 형성되는 소형화 구조 제조방법.
  8. 제1항에 있어서, 상기 포토레지스트층을 패터닝하는 단계는 상기 포토레지스트층을 마스킹(masking)하고 약 365㎛의 파장을 가진 평행 방사원(a source of collimated radiation)을 제공하는 낮은 개구부의 투영 시스템(a small numerical operture projection system)을 사용하여 상기 포토레지스트층의 마스킹(masking)되지 않은 부분을 노출광(exposing)시키는 단계를 포함하는 소형화 구조 제조방법.
  9. 제1항에 있어서, 상기 포토레지스트층은 약 2㎛보다 작지 않은 두께에서 소형화 구조 제조방법.
  10. 제1항에 있어서, 상기 포토레지스트층은 최소 9:1의 최대 종횡비(aspect ratio)를 가지는 프리 스텐딩 구조를 제공하기 위해 패턴화되는 소형화 구조 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930016296A 1992-09-21 1993-08-21 소형화 구조 제조방법 KR970008324B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US948,189 1978-10-02
US07/948,189 US5364742A (en) 1992-09-21 1992-09-21 Micro-miniature structures and method of fabrication thereof

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KR940007969A true KR940007969A (ko) 1994-04-28
KR970008324B1 KR970008324B1 (ko) 1997-05-23

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US (1) US5364742A (ko)
EP (1) EP0592094B1 (ko)
JP (1) JP2744877B2 (ko)
KR (1) KR970008324B1 (ko)
CN (1) CN1077300C (ko)
DE (1) DE69323381T2 (ko)
MY (1) MY109365A (ko)
SG (1) SG42895A1 (ko)
TW (1) TW226475B (ko)

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US5364742A (en) 1994-11-15
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EP0592094A3 (en) 1994-10-12
DE69323381T2 (de) 1999-09-30
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MY109365A (en) 1997-01-31
EP0592094A2 (en) 1994-04-13
TW226475B (ko) 1994-07-11

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